Scanning Probe Microscopy: Characterization, Nanofabrication and Device Application of Functional Materials: Proceedings of the NATO Advanced Study Institute on Scanning Probe Microscopy: Characterization, Nanofabrication and Device Application of Functional Materials Algarve, Portugal 1–13 October 2002

TABLE OF CONTENTS......Page 6
PREFACE......Page 9
ON THE NATO ASI......Page 12
ON THE BOOK......Page 14
ACKNOWLEDGEMENTS......Page 15
PHOTO OF THE GROUP......Page 16
ADDRESS LIST OF THE AUTHORS......Page 19
LIST OF PARTICIPANTS......Page 22
Part I – Fundamentals of Functional Materials......Page 35
1. Introduction......Page 36
2. Fundaments of Properties of Functional Materials: General Concepts......Page 39
3. Functional Materials......Page 47
4. Functional Materials Processing Technologies......Page 54
5. Applications of Functional Materials......Page 59
6. Future Trends in Functional Materials......Page 61
1. Introduction......Page 67
2.1. Trends......Page 68
2.2. Roadblocks at the end of the silicon scaling era......Page 70
3.1. High permittivity gate oxides......Page 72
3.2. Advanced dielectrics for DRAMs......Page 76
4.1. Ferroelectric random access memories......Page 78
4.2. Ferroelectric field effect transistors......Page 79
6. Conclusions......Page 80
UNSOLVED PROBLEMS IN FERROELECTRICS FOR SCANNING PROBE MICROSCOPY......Page 83
1. Introduction and deposition techniques......Page 84
1.1. Nanophase deposition techniques......Page 86
1.1.1. Electron-beam direct writing......Page 87
1.1.2. Focussed-ion-beam processing......Page 89
1.1.3. Self-assembly......Page 90
2.1.2. Zirconia ZrO[sub(2)]......Page 92
2.2. Zircon ZrSiO[sub(4)]......Page 93
3.2. Misted deposition......Page 94
4.1. Gruverman-Shur data on lead germanate......Page 95
5. Perimeter effect......Page 96
5.3. Lead zirconate-titanate data......Page 97
6.1. Langmuir-Blodgett film data of Bune et al.......Page 98
6.4. Screening corrections......Page 99
6.4.6. Relation to Tilley-Zeks theory......Page 100
8. Conclusions......Page 102
Part II – Fundamentals of Scanning Probe Techniques......Page 106
PRINCIPLES OF BASIC AND ADVANCED SCANNING PROBE MICROSCOPY......Page 107
1. Introduction......Page 108
2. Basic Concepts of Scanning Probe Microscopy......Page 109
2.1. Electrostatic Force Microscopy......Page 111
3.1. Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy......Page 112
3.2. Scanning Surface Potential Microscopy......Page 114
3.3. Scanning Impedance Microscopy......Page 116
3.5. Piezoresponse Force Microscopy......Page 118
3.6. Scanning Microwave and Dielectric Microscopy......Page 120
4.1. Transport in Single Molecules and Nano Wire/Tubes......Page 121
4.2. Domain Interactions in Ferroelectric Thin Films......Page 123
5. Other Techniques and Future Directions......Page 124
NANOSCALE PROBING OF PHYSICAL AND CHEMICAL FUNCTIONALITY WITH NEAR-FIELD OPTICAL MICROSCOPY......Page 132
1. Introduction......Page 133
2. Optical Far-field Properties......Page 134
2.2. Optical Absorption......Page 135
2.4. Raman spectroscopy......Page 137
2.6. Optical resolution: the Abbe limit......Page 139
3.1. Principle of optical near and far field......Page 140
3.3. Scattering type optical near-field microscopy (s-SNOM)......Page 142
4.2. Near-field optical polarisation contrast......Page 143
4.5. Near-field optical modification and manipulation......Page 145
5. Conclusion......Page 146
NANOSCALE ELECTRONIC MEASUREMENTS OF SEMICONDUCTORS USING KELVIN PROBE FORCE MICROSCOPY......Page 148
1.2. The Kelvin probe......Page 149
1.3. Kelvin probe force microscopy experimental setup......Page 153
2.1. Equilibrium measurements......Page 154
2.2. Measurements under operating conditions......Page 158
3.1.1. The KPFM based Method......Page 162
3.1.2. Analysis......Page 163
3.1.3. Measurements on p-n Junctions......Page 165
3.2. Measurements at GaP/metal junctions......Page 166
4.1. Introduction: tip-sample electrostatic interaction......Page 168
4.2. Electrostatic screening in semiconductors......Page 170
4.3. Numerical analysis of the tip-semiconductor electrostatic force......Page 171
4.4. Comparison with experimental results......Page 176
5. Conclusions......Page 178
EXPANDING THE CAPABILITIES OF THE SCANNING TUNNELING MICROSCOPE......Page 181
2.1. Introduction......Page 182
2.2. Experimental setup......Page 183
3.1. Theory......Page 184
3.2. Characterization of bulk silicon......Page 186
3.3. Atomic scale imaging of pn junctions......Page 187
4. Feature Tracking in STM......Page 189
4.1. Cross-correlation......Page 190
4.2. Pixel roundoff correction......Page 193
5.1. Single molecule switching......Page 194
5.2. Diffusion of benzene on Ag{110}......Page 195
6. Conclusions......Page 197
FUNCTIONS OF NC – AFM ON ATOMIC SCALE......Page 200
2.1. Frequency modulation (FM) detection method......Page 201
3. Guidelines for the Achievement of True Atomic Resolution with NC-AFM......Page 202
4. Spatial Resolution in High Performance NC-AFM......Page 203
5.1. Three-dimentional mapping of atomic force......Page 206
5.2. Discrimination of atomic force mechanisms and atom species......Page 207
5.3. Control of atomic force and atom position......Page 210
6. Thermal Fluctuation of Atom Investigated by Low Temperature NC-AFM......Page 213
7. Mechanical Atom Manipulation Based on NC-AFM Method......Page 215
7.1. Mechanical vertical manipulation of individual Si adatom......Page 216
8. Conclusion......Page 220
Part III – Application of Scanning Techniques to Functional Materials......Page 223
1. Introduction......Page 224
2.1. DC transport by Scanning Surface Potential Microscopy......Page 225
2.2. AC transport properties by Scanning Impedance Microscopy......Page 227
2.3. Current based SPM transport measurements......Page 229
3. Properties of individual interfaces......Page 230
3.1. Surface potential and interface screening......Page 231
3.2.1. Potential probe: SSPM......Page 234
3.2.2. Current probe: Conductive AFM......Page 235
3.3. Impedance and interface trap states......Page 236
4.1. Grain boundary mediated transport in ZnO......Page 238
4.2. Temperature dependent transport: BaTiO[sub(3)]......Page 241
4.3.1. Piezoresponse Force Microscopy of BiFeO[sub(3)]......Page 242
4.3.2. DC transport in BiFeO[sub(3)]......Page 243
4.3.3. Grain boundaries and AC transport in BiFeO[sub(3)]......Page 244
5. Conclusions......Page 245
1. Introduction......Page 248
2. Ferroelectric domain imaging in SFM......Page 249
3.1. Electrostatic Force Microscopy......Page 250
4. Contact domain imaging......Page 253
4.1. Domain imaging via polarization-dependent friction......Page 254
4.2. Domain imaging via surface topography......Page 255
4.3. Domain imaging via nonlinear dielectric response......Page 257
4.4. Domain imaging via static piezoresponse......Page 258
4.5. Domain imaging via dynamic piezoresponse - Piezoresponse Force Microscopy......Page 260
5.1. Characterization......Page 263
5.2. Domain control......Page 264
5.3. Fabrication......Page 265
6. Conclusion......Page 266
SCANNING TUNNELING SPECTROSCOPY: LOCAL DENSITY OF STATES AND SPIN DISTRIBUTION OF INTERACTING ELECTRON SYSTEMS......Page 275
1. Introduction......Page 276
2. Scanning Tunneling Spectroscopy......Page 277
2.1. Spin-polarized Scanning Tunneling Spectroscopy......Page 279
3.1. Measurements on InAs......Page 280
4. Experimental results on InAs......Page 281
4.1. B = 0 T......Page 283
4.2. B = 6 T......Page 287
5. Experimental results on Fe-islands......Page 290
6. Summary......Page 293
NANOINSPECTION OF DIELECTRIC AND POLARIZATION PROPERTIES AT INNER AND OUTER INTERFACES IN FUNCTIONAL FERROELECTRIC PZT THIN FILMS......Page 298
2.1. Piezoresponse Force Microscopy (PFM)......Page 299
2.3. Pull-off Force Spectroscopy (PFS)......Page 301
3. Materials......Page 302
4.1. Polarization profile across the PZT film......Page 303
4.2. Relaxation dynamics within the PZT film......Page 305
4.3. Local dielectric constant at the PZT surface......Page 306
5. Conclusion......Page 307
MICROSCALE CONTACT CHARGING ON A SILICON OXIDE......Page 311
2.1. Characteristics and problems of usual macroscopic contact charging......Page 312
2.2. Characteristics and merits of novel microscopic contact charging......Page 313
3.1. How to deposit charge by microscopic contact with AFM-tip......Page 314
4.1. Time evolution of electrostatic force due to deposited charge......Page 315
4.2. Contact voltage and dissipation time dependences of peak values of electrostatic force......Page 316
4.3. Dissipation processes and charge sites of deposited charge......Page 318
4.4. Phase Transition of densely deposited negative charge......Page 319
4.5. Spatial distribution of densely deposited negative charge......Page 322
4.6. Contact voltage and contact time dependence of initial electrostatic force and FWHM in air and in a vacuum......Page 323
5.1. Atomically resolved imaging of point charge......Page 325
5.2. Atomically resolved contact potential difference......Page 327
6. Conclusion......Page 328
1. Introduction......Page 331
2. Silane-based Self-Assembled Monolayers (SAMs) – preparation and chemistry......Page 332
3. SPM-based nanolithography......Page 333
3.1. Anodic oxidation of silicon......Page 334
3.2. Constructive nanolithography - chemical, physical, and analytical basis......Page 335
3.2.1. Oxidative processes......Page 336
3.2.2. Reductive processes......Page 338
3.2.3. In-situ chemical generation and import of prefabricated inorganic species by Ligand exchange......Page 340
3.2.4. “Macro-Nano” approach......Page 341
4.1. Macroscopic analytical techniques......Page 343
4.2. SPM-based techniques......Page 344
5. Experimental considerations for optimization of writing......Page 346
6. Future directions and applications......Page 349
NANOMETER-SCALE ELECTRONICS AND STORAGE......Page 354
2. Self-assembled monolayers......Page 355
2.1. Phase separation driven by terminal functionality......Page 356
2.2. Phase separation driven by internal functionality......Page 358
2.3. Separation driven by post-adsorbtion processing......Page 360
3.1. Isolation of individual molecules......Page 362
3.2. Vapor-phase annealing......Page 367
3.3. Results and discussion of the switching mechanism......Page 369
4. Conclusions......Page 372
Part IV – Contributed papers......Page 376
STM TIPS FABRICATION FOR CRITICAL DIMENSION MEASUREMENTS......Page 377
SCANNING PROBE MICROSCOPY CHARACTERIZATION OF FERROELECTRICS DOMAINS AND DOMAINS WALLS IN KTiOPO[sub(4)]......Page 383
IMAGING LOCAL DIELECTRIC AND MECHANICAL RESPONSES WITH DYNAMIC HETERODYNED ELECTROSTATIC FORCE MICROSCOPY......Page 390
AFM PATTERNING OF SrTiO[sub(3-δ)] THIN FILMS AND DEVICE APPLICATIONS......Page 405
NANOSCALE INVESTIGATION OF A RAYLEIGH WAVE ON LiNbO[sub(3)]......Page 417
SCANNING CAPACITANCE FORCE MICROSCOPY AND KELVIN PROBE FORCE MICROSCOPY OF NANOSTRUCTURES EMBEDDED IN SiO[sub(2)]......Page 423
ELECTRICAL CHARACTERISATION OF III-V BURIED HETEROSTRUCTURE LASERS BY SCANNING CAPACITANCE MICROSCOPY......Page 430
PROBING THE DENSITY OF STATES OF HIGH TEMPERATURE SUPERCONDUCTORS WITH POINT CONTACT TUNNELING SPECTROSCOPY......Page 442
ANNEALING INFLUENCE ON CO ULTRATHIN FILM MORPHOLOGY IN MBE GROWN Co/Au BILAYERS......Page 452
CORRELATION BETWEEN THE SURFACE RELIEF AND INTERFACES STRUCTURE OF Fe/Cr SUPERLATTICES AND ELECTROMAGNETIC WAVES PENETRATION......Page 460
MAGNETORESISTANCE AND MICROSTRUCTURE OF MAGNETIC THIN FILM MULTILAYERS......Page 466
SPM INVESTIGATION OF THIOLATED GOLD NANOPARTICLE PATTERNS DEPOSITED ON DIFFERENT SELF-ASSEMBLED SUBSTRATES......Page 474
AFM OF GUANINE ADSORBED ON HOPG UNDER ELECTROCHEMICAL CONTROL......Page 484
DYNAMICS IN MODEL MEMBRANES AND DNA-MEMBRANE COMPLEXES USING TEMPERATURE CONTROLLED ATOMIC FORCE MICROSCOPY......Page 491
INDEX......Page 500