The Physics of Si: O2 and its Interfaces. Proceedings of the International Topical Conference on the Physics of Si: O2 and Its Interfaces Held at the IBM Thomas J. Waston Research Center, Yorktown Heights, New York, March 22–24, 1978

Content: 
Inside Front Cover, Page ii
Front Matter, Page iii
Copyright, Page iv
FOREWORD, Pages v-vi, Sokrates T. Pantelides
ELECTRONIC PROPERTIES OF VITREOUS SILICON DIOXIDE, Pages 1-13, N.F. Mott
SMALL POLARON FORMATION AND MOTION OF HOLES IN a-SiO2, Pages 14-18, R.C. Hughes, D. Emin
FIELD-DEPENDENT HOLE TRANSPORT IN AMORPHOUS SiO2, Pages 19-23, F.B. McLean, H.E. Boesch Jr., J.M. McGarrity
EXCITON TRANSPORT IN SiO2, Pages 24-28, Z.A. Weinberg, G.W. Rubloff
HIGH-ELECTRIC FIELD TRANSPORT OF ELECTRONS IN SiO2, Pages 29-34, D.K. Ferry
ELECTRON EMISSION FROM SILICON DIOXIDE INTO VACUUM, Pages 35-39, P.M. Solomon
ELECTRON TRANSPORT IN SILICON OXYNITRIDE, Pages 40-45, A.V. Rzhanov, K.P. Mogilnikov, V.A. Gritsenko
THE NATURE OF ELECTRON TUNNELING IN SiO2, Pages 46-50, M. Av-Ron, M. Shatzkes, T.H. DiStefano, I.B. Cadoff
EVIDENCE FOR A BAND TAIL ON THE CONDUCTION BAND EDGE OF THERMAL SiO2 FROM PHOTON ASSISTED TUNNELING MEASUREMENTS, Pages 51-54, A. Hartstein, Z.A. Weinberg, D.J. DiMaria
ELECTRONIC STRUCTURES OF CRYSTALLINE AND AMORPHOUS SiO2, Pages 55-59, D.J. Chadi, R.B. Laughlin, J.D. Joannopoulos
ELECTRONIC STRUCTURE OF α-QUARTZ AND THE INFLUENCE OF SOME LOCAL DISORDER: A TIGHT BINDING STUDY, Pages 60-64, R.N. Nucho, A. Madhukar
ELECTRONIC STRUCTURE INVESTIGATIONS OF TWO ALLOTROPIC FORMS OF SiO2: α-QUARTZ AND β-CRISTOBALITE, Pages 65-69, I.P. Batra
BAND STRUCTURES AND ELECTRONIC PROPERTIES OF SiO2, Pages 70-74, W. Beall Fowler, Philip M. Schneider, Eduardo Calabrese
K X-RAY SPECTRA OF AMORPHOUS AND CRYSTALLINE SiO2, Pages 75-79, C. Sénémaud, M.T. Costa Lima
THE OPTICAL ABSORPTION SPECTRUM OF SiO2, Pages 80-84, Sokrates T. Pantelides
INELASTIC ELECTRON SCATTERING IN SiO2, Pages 85-88, A.E. Meixner, P.M. Platzman, M. Schlüter
ELECTRONIC STRUCTURE OF SiO2 FROM ELECTRON ENERGY LOSS SPECTROSCOPY, Pages 89-93, J. OLIVIER, P. FAULCONNIER, R. POIRIER
THE ABSORPTION AND PHOTOCONDUCTIVITY SPECTRA OF VITREOUS SiO2, Pages 94-98, A. Appleton, T. Chiranjiví, M. Jafaripour-Ghazvini
CALCULATED AND MEASURED AUGER LINESHAPES IN SiO2, Pages 99-104, D.E. Ramaker, J.S. Murday, N.H. Turner, G. Moore, M.G. Lagally
IS SILICON DIOXIDE COVALENT OR IONIC?, Pages 105-110, Walter A. Harrison
CHEMICAL BOND AND RELATED PROPERTIES OP SiO2, Pages 111-115, K. Hübner
TOPOLOGICAL EFFECTS ON THE BAND STRUCTURE OF SILICA, Pages 116-121, M.F. Thorpe
HEAT PULSE EXPERIMENTS ON VITREOUS SiO2 IN THE TEMPERATURE RANGE 2.5 - 300 K, Pages 122-127, W. Block, M. Meissner, K. Spitzmann
THERMAL CONDUCTIVITY OF SiO2, Pages 128-132, Baxter H. Armstrong
NEUTRON DIFFRACTION BY VITREOUS SILICA, Pages 133-138, Adrian C Wright, Roger N Sinclair
RAMAN SPECTRA AND ATOMIC CONFIGURATIONS IN VITREOUS SILICA, Pages 139-143, Stephen W. Barber
Electrostriction and Piezoelectricity of Thermally Grown SiO2 Films, Pages 144-148, K. Misawa, A. Moritani, J. Nakai
CRITICAL NEED FOB S(k,ω) DETERMINATIONS IN AMORPHOUS SiO2: CALCULATION OP PHYSICAL PROPERTIES VIA FROZEN LIQUID PHONONS, Pages 149-154, Edward Siegel
PROPERTIES OF LOCALIZED SILICON-DIOXIDE CLUSTERS IN LAYERS OF DISORDERED SILICON ON SILVER, Pages 155-159, Cheol Jung Kim, K. Shu, H. Oona, S.O. Sari
THE PROPERTIES OF ELECTRON AND HOLE TRAPS IN THERMAL SILICON DIOXIDE LAYERS GROWN ON SILICON, Pages 160-178, D.J. DiMaria
DYNAMIC BEHAVIOUR OF MOBILE IONS IN SIO2 LAYERS, Pages 179-183, M.W. Hillen
PHOTO-INJECTION STUDIES OF TRAPS IN Hcℓ/H2O OXIDES, Pages 184-188, J. Dorosti, C.R. Viswanathan
PHOTODEPOPULATION OF ELECTRONS TRAPPED IN SiO2 ON SITES RELATED TO AS AND P IMPLANTATION, Pages 189-194, R.F. DeKeersmaecker, D.J. DiMaria, S.T. Pantelides
CHEMICAL STATE OF PHOSPHORUS IN DEPOSITED SiO2 (P) FILMS, Pages 195-199, A.N. Saxena, R.A. Powell
SPECTROSCOPIC AND STRUCTURAL PROPERTIES OF NITROGEN DOPED LOW-TEMPERATURE SiO2 FILMS, Pages 200-204, Gordon Wood Anderson, William A. Schmidt, James Comas
SOME OBSERVATIONS OF DEFECTS IN AMORPHOUS SiO2 FILMS, Pages 205-209, E.A. Irene
MEASUREMENT OF HYDROGEN PROFILES IN SiO2 BY A NUCLEAR REACTION TECHNIQUE, Pages 210-214, D.D. Allred, C.W. White, G.J. Clark, B.R. Appleton, I.S.T. Tsong
INTERACTION OF DISSOLVED MOLECULAR HYDROGEN WITH A VITREOUS SILICA HOST, Pages 215-221, J. Vitko Jr., Charles M. Hartwig, P.L. Mattern
HYDROGEN IN SiO2 FILMS ON SILICON, Pages 222-226, A.G. Revesz
ESR CENTERS AND CHARGE DEFECTS NEAR THE Si/SiO2 INTERFACE, Pages 227-231, Edward H. Poindexter, Edwin R. Ahlstrom, Philip J. Caplan
DEFECTS AND IMPURITIES IN α-QUARTZ AND FUSED SILICA, Pages 232-252, D.L. Griscom
A GERMANIUM TRI-HYDROGEN CENTER IN α-QUARTZ, Pages 253-257, F.C. Laman, J.A. Weil
ELECTRON PARAMAGNETIC RESONANCE STUDIES ON Aℓ CENTERS IN VITREOUS SILICA, Pages 258-262, Keith L. Brower
OXYGEN-ASSOCIATED TRAPPED-HOLE CENTERS IN HIGH-PURITY FUSED SILICA, Pages 263-267, M. Stapelbroek, D.L. Griscom
A MODEL FOR POINT DEFECTS IN SILICA, Pages 268-272, G.N. Greaves
AUGER SPECTRA OF SiO2 SURFACE DEFECT CENTERS, Pages 273-277, Klaus Schwidtal
VIBRATIONAL AND ELECTRONIC SPECTROSCOPY OF ION-IMPLANTATION- INDUCED DEFECTS IN FUSED SILICA AND CRYSTALLINE QUARTZ, Pages 278-283, G.W. Arnold
RAMAN STUDIES OF STRUCTURAL DEFECTS IN VITREOUS SiO2, Pages 284-288, F.L. Galeener, J.C. Mikkelsen Jr., N.M. Johnson
CATHODOLUMINESCENCE STUDIES OF SiO2- Na,Cl,Ge,Cu,Au AND OXYGEN VACANCY RESULTS, Pages 289-293, Colin E. Jones, David Embree
ANOMALOUS DIELECTRIC ABSORPTION IN SiO2 -EASED GLASSES, Pages 294-298, Martin A. Bösch
XPS STUDY OF SODIUM OXIDE IN AMORPHOUS SiO2, Pages 299-303, B.W. Veal, D.J. Lam
MODIFICATION OF SiOx, Pages 304-308, Stanford R. Ovshinsky, Krishna Sapru, Krystyna Dec
INTRINSIC SURFACE PHONONS IN POROUS GLASS, Pages 309-313, C.A. Murray, T.J. Greytak
POSITRONIUM-SURFACE INTERACTION IN THE PORES OF VYCOR GLASS, Pages 314-315, S.M. Kim, W.J.L. Buyers
ION IRRADIATION AND STORED ENERGY IN VITREOUS SiO2, Pages 316-320, M. Antonini, A. Manara, P. Lensi
ELECTRONIC STATES OF Si-SiO2 INTERFACES, Pages 321-327, R.B. Laughlin, J.D. Joannopoulos, D.J. Chadi
THE DEFECT STRUCTURE OF THE Si-SiO2 INTERFACE, A MODEL BASED ON TRIVALENT SILICON AND ITS HYDROGEN “COMPOUNDS”, Pages 328-332, Christer M Svensson
ELECTRONIC STRUCTURE OF A MODEL Si-SiO2 INTERFACE, Pages 333-338, Frank Herman, Inder P. Batra, Robert V. Kasowski
CONTINUOUS-RANDOM-NETWORK MODELS FOR THE Si-SiO2 INTERFACE, Pages 339-343, Sokrates T. Pantelides, Marshall Long
STUDIES OF THE Si-SiO2 INTERFACE BY MeV ION SCATTERING, Pages 344-350, L.C. Feldman, I. Stensgaard, P.J. Silverman, T.E. Jackman
TRANSMISSION ELECTRON MICROSCOPY OF MICRO-STRUCTURAL DEFECTS IN Si-SiO2 SYSTEMS – Si CLUSTERS IN SiO2 FILM –, Pages 351-355, Jen-Jon Chen, Takuo Sugano
A HIGH RESOLUTION ELECTRON MICROSCOPY STUDY OF THE Si - SiO2 INTERFACE, Pages 356-361, Ondrej L. Krivanek, D.C. Tsui, T.T. Sheng, A. Kamgar
STRUCTURE OF THE Si-SiO2 INTERFACE BY INTERNAL PHOTOEMISSION, Pages 362-365, T.H. DiStefano
AUGER SPUTTER PROFILING STUDIES OF THE Si-SiO2 INTERFACE, Pages 366-372, C.R. Helms, N.M. Johnson, S.A. Schwarz, W.E. Spicer
AUGER ANALYSIS OF THE SiO2/Si INTERFACE OF ULTRATHIN OXIDES, Pages 373-378, J.F. Wager, C.W. Wilmsen
STUDIES OF Si/SiO2 INTERFACES AND SiO2 BY XPS, Pages 379-383, Takeo Hattori, Tatsushi Nishina
X-RAY PHOTOELECTRON SPECTROSCOPY OF SiO2-Si INTER-FACIAL REGIONS, Pages 384-388, S.I. Raider, R. Flitsch
CHEMICAL STRUCTURE OF THE TRANSITIONAL REGION OF THE SiO2/Si INTERFACE, Pages 389-395, F.J. Grunthaner, J. Maserjian
MOS SOLAR CELL AS A TOOL TO STUDY THE TRANSITION REGION ASSOCIATED WITH ULTRA THIN FILMS OF SiOx, Pages 396-400, R. Singh, K. Rajkanan, J. Shewchun
INITIAL STAGES OF SIO2 FORMATION ON SI (111), Pages 401-406, R.S. Bauer, J.C. McMenamin, H. Petersen, A. Bianconi
THE Si-SiO2 INTERFACE AND LOCALIZATION IN THE INVERSION LAYER, Pages 407-411, M. Pepper
METASTABILITIES AT THE Si-SiOx INTERFACE, Pages 412-416, C.T. White, K.L. Ngai
PHOTOCAPACITANCE PROBING OF Si-SiO2 INTERFACE STATES, Pages 417-420, Emil Kamieniecki, Ryszard Nitecki
TRANSIENT CAPACITANCE MEASUREMENTS OF ELECTRONIC STATES AT THE SiO2-Si INTERFACE, Pages 421-427, N.M. Johnson, D.J. Bartelink, M. Schulz
INTERFACE STATES RESULTING FROM A HOLE FLUX INCIDENT ON ON THE SiO2/Si INTERFACE, Pages 428-432, J.M. McGarrity, P.S. Winokur, H.E. Boesch Jr., F.B. McLean
THE INFLUENCE OF THE pH ON THE SURFACE STATE DENSITY AT THE SiO2-Si INTERFACE, Pages 433-437, N.F. de Rooij, P. Bergveld
THE Si-SiO2 INTERFACE: OXIDE CHARGE, ELECTRON AFFINITY AND FAST SURFACE STATES, Pages 438-442, L.A. Kasprzak, A.K. Gaind
LATERAL NONUNIFORMITIES (LNU) OF OXIDE AND INTERFACE STATE CHARGE, Pages 443-448, N. Zamani, J. Maserjian
TEMPERATURE DEPENDENCE OF RELAXATION OF INJECTED CHARGE AT THE POLYCRYSTALLINE-SILICON-SiO2 INTERFACE, Pages 449-453, T.W. Hickmott
EFFECTS OF ULTRA-THIN SiOx IN CONDUCTING M-I-S Structures, Pages 454-458, T.E. Sullivan, R.B. Childs, J.M. Ruths, S.J. Fonash
CONFIRMATION OF HYDROGEN SURFACE STATES AT THE Si-SiO2 INTERFACE, Pages 459-463, B. Keramati, J.N. Zemel
ELECTRICAL PROPERTIES OF SiO2-Si INTERFACE FOR DEFORMED Si SURFACES, Pages 464-469, K. Murty, B. Lalevic, B.W. Lee, H. Suga
SHEAR STRENGTH OF METAL - SiO2 CONTACTS, Pages 470-474, Stephen V. Pepper
List of Participants, Pages 475-486
AUTHOR INDEX, Pages 487-488