Spintronics

Cover Page......Page 1
Title Page......Page 2
Copyright......Page 3
Preface......Page 4
Single Spin Coherence in Semiconductors......Page 9
Introduction......Page 10
Single Electron Spins in Quantum Dots......Page 11
Optical selection rules and the Faraday effect......Page 12
Measuring a single electron spin by Kerr rotation......Page 14
Spin dynamics of a single electron spin......Page 17
Ultrafast manipulation using the optical Stark effect......Page 21
Conclusions......Page 25
Few Magnetic Spins in Quantum Wells......Page 26
Mn-ions in GaAs as optical spin centers......Page 27
Zero-field optical control of magnetic ions......Page 29
Mechanism of dynamic polarization and exchange splitting......Page 31
Spin dynamics of Mn-ions in GaAs......Page 33
Introduction......Page 35
NV basics......Page 36
Anisotropic interactions of a single spin......Page 38
Single NV spin manipulation and coherence......Page 43
Coupled spins in diamond......Page 46
Conclusions and outlook......Page 48
References......Page 49
Theory of Spin-Orbit Effects in Semiconductors......Page 53
Introduction......Page 54
Dirac equation......Page 56
From Dirac equation to spin-orbit coupling......Page 57
Band Structure of Semiconductors: Effective k middot p Hamiltonians......Page 59
8-Band Kane model Hamiltonian......Page 60
8-Band Kohn-Luttinger Hamiltonian......Page 61
Effective mass or envelope function approximation......Page 64
Effective mass 2-band model Hamiltonians: 3-d Conduction electrons......Page 65
Effective mass 2-d electron and hole model Hamiltonians......Page 68
SHE and AHE......Page 69
The semiclassical Boltzmann equation approach to anomalous Hall transport......Page 72
The golden rule......Page 73
Kinetic equation of the semiclassical Boltzmann distribution......Page 75
Mechanisms of the AHE and SHE......Page 77
AHE in two dimensions......Page 79
Intrinsic SHE: A heuristic picture......Page 81
Numerical studies of the spin Hall accumulation and SHE......Page 85
Comparing experimental and calculated magnitudes of the edge spin-polarization......Page 86
Topological Berry's Phases in Spin-Orbit Coupled Systems: ACE......Page 87
Landauer-Buumlttiker calculations of ACE: Comparison to experiments......Page 90
References......Page 93
Fermi Level Effects on Mn Incorporation in III-Mn-V Ferromagnetic Semiconductors......Page 96
Diluted magnetic semiconductors......Page 97
Hole-mediated ferromagnetism in III1-xMnxV alloys......Page 98
Mn lattice site locations in GaMnAs......Page 99
LT-MBE growth of GaMnAs......Page 100
Determination of the location of Mn in the GaMnAs lattice by ion channeling......Page 102
Charged dopant distribution by electrochemical capacitance-voltage profiling......Page 103
Magnetic characterization......Page 104
Observation of MnI in Ga1-xMnxAs......Page 105
Maximum limit on the Curie temperature......Page 108
Low-temperature annealing of Ga1-xMnxAs......Page 110
Effects of reducing the film thickness......Page 115
Extrinsic doping of GaMnAs with low Mn concentration......Page 121
Be doping of GaMnAs at high Mn concentration......Page 122
Modulation doping of Ga1-xMnxAs in heterostructures......Page 125
Self-compensation in other III-Mn-V alloys......Page 129
Alternative synthesis routes for III1-xMnxV alloys......Page 132
Strategies for increasing Tc in III-Mn-V alloys......Page 136
References......Page 137
Introduction......Page 141
Basic Transport Characteristics......Page 144
Impurity-band to valence-band crossover......Page 145
Quantum interference and interaction effects......Page 160
Critical contribution to transport near the Curie point......Page 168
AMR in ohmic regime......Page 173
Tunneling AMR......Page 183
Coulomb blockade AMR and other MR transistors......Page 190
Current induced domain wall switching......Page 198
Summary......Page 205
References......Page 206
Introduction......Page 212
Spin-Injection and Detection of Spin-Polarization......Page 214
Magnetic tunnel junction......Page 217
Current-induced magnetization switching......Page 220
DW observation......Page 223
DW resistance......Page 226
DW motion......Page 229
Electric-Field Control of Ferromagnetism......Page 233
Optical Control of Ferromagnetism......Page 236
Summary......Page 239
References......Page 240
Introduction......Page 246
Tunneling Anisotropic Magnetoresistance......Page 249
Multi-TAMR Structures......Page 253
Volatile and Nonvolatile Operation......Page 255
Correlated Effects......Page 257
Portability......Page 264
Lateral Nanoconstrictions......Page 265
Current-Assisted Manipulation......Page 269
Local Lithographic Anisotropy Control......Page 273
Magnetic Characterization of Nanobars......Page 274
Transport Characterization of Nanobars......Page 276
Anisotropic Strain Relaxation......Page 279
Memory Device Using Local Anisotropy Control......Page 282
Device Operation......Page 283
Magnetic States......Page 284
Origin of the Resistance Signal......Page 285
Conclusion and Outlook......Page 288
References......Page 289
Magnetic and Electric Impurities in II-VI Nanostructures......Page 292
Carrier-Induced Ferromagnetism in 2D DMSs......Page 296
Introduction......Page 303
A single magnetic atom in a QD......Page 306
Optical reading of the spin state of a single magnetic atom......Page 311
Electrical control of a single magnetic atom......Page 315
Conclusion......Page 320
Transport in Quantum II-VI DMS Structures......Page 321
References......Page 325
Magnetic Impurities in Wide Band-gap III-V Semiconductors......Page 330
Introduction......Page 331
Diluted Magnetic Semiconductors......Page 335
Nature of Mn Impurity in III-V Semiconductors......Page 339
Ionized acceptor, Mn2+(d5)......Page 340
Neutral acceptor, Mn3+(d4)......Page 345
Neutral acceptor, Mn2+(d5)+hole......Page 349
Localization radius of the hole bound to Mn2+(d5) center in III-V semiconductors......Page 350
Location of Mn acceptor level in III-V semiconductors band structure-lattice relaxation......Page 353
Lower charge states of Mn in wide band gap III-V semiconductors......Page 355
Magnetic properties of wurtzite GaN with Mn......Page 357
Exchange integrals in GaN doped with Mn......Page 360
GaN diluted with Fe......Page 362
GaN diluted with Cr......Page 364
Internal Reference Rule for Transition Metal Ions-Case of GaN......Page 366
Summary and Conclusions......Page 367
References......Page 369
Exchange Interactions and Nanoscale Phase Separations in Magnetically Doped Semiconductors......Page 375
Introduction......Page 376
TM impurity-related levels......Page 379
TMs as carrier traps......Page 381
TMs as carrier dopant......Page 382
Charge transfer states......Page 383
Magnetic moments......Page 384
Origin of Exchange Interactions between Carriers and Localized Spins......Page 385
Splitting of extended states: Weak coupling......Page 386
Splitting of extended states: Strong coupling......Page 387
Spin-disorder scattering......Page 394
Magnetic polarons......Page 395
Electron-hole exchange interaction......Page 396
Exchange interactions between electrons and bound holes......Page 397
Superexchange......Page 401
Zener/RKKY models......Page 402
The model......Page 403
Application to DMS films......Page 406
Application to modulated structures of DMSs......Page 409
Beyond colinear magnetic ground state......Page 410
Quantum localization......Page 411
Weak disorder......Page 414
Critical region......Page 415
Critical scattering near MIT......Page 417
Strongly localized regime......Page 419
Observations of spinodal decomposition......Page 420
Controlling spinodal decomposition by inter-ion Coulomb interactions......Page 423
Possible functionalities......Page 424
Is Ferromagnetism Possible in Semiconductors with no Magnetic Elements?......Page 426
Summary......Page 427
References......Page 429
Introduction......Page 437
Magnetic Mechanism, TC, and Unified Physical Picture......Page 440
Spinodal Nano-Decomposition and Nano-Spintronics Applications......Page 448
New Class of Oxide Spintronics Without a 3d TM......Page 455
References......Page 456
Introduction......Page 459
Fabrication and Structure of GaAs:MnAs Nano-Particles......Page 460
Large Magnetoresistance at Room Temperature......Page 462
Spin Dependent Tunneling Transport Properties in III-V Based Heterostructures Containing GaAs:MnAs......Page 467
Properties of Zinc-Blende Type and NiAs-Type MnAs Nano-Particles......Page 475
Magneto-Optical Device Applications......Page 482
Acknowledgments......Page 487
References......Page 488
C......Page 490
D......Page 491
G......Page 492
M......Page 494
N......Page 496
P......Page 497
S......Page 498
W......Page 500
Z......Page 501
Physics of III-V Compounds......Page 502
Infrared Detectors......Page 503
Modulation Techniques......Page 504
Defects, (HgCd)Se, (HgCd)Te......Page 505
Semi-Insulating GaAs......Page 506
Hydrogenated Amorphous Silicon......Page 507
Lightwave Communications Technology......Page 508
Applications of Multiquantum Wells, Selective Doping, and Superlattices......Page 509
Measurement of High-Speed Signals in Solid State Devices......Page 510
Strained-Layer Superlattices: Physics......Page 511
Nanostructured Systems......Page 512
Minority Carriers in III-V Semiconductors: Physics and Applications......Page 513
Semiconductors for Room Temperature Nuclear Detector Applications......Page 514
Effect of Disorder and Defects in Ion-Implanted Semiconductors: Electrical and Physiochemical Characterization......Page 515
High Brightness Light Emitting Diodes......Page 516
Identification of Defects in Semiconductors......Page 517
High Pressure in Semiconductor Physics I......Page 518
Nonlinear Optics in Semiconductors I......Page 519
Intersubband Transitions in Quantum Wells: Physics and Device Applications I......Page 520
Ultrafast Physical Processes in Semiconductors......Page 521
Recent Trends in Thermoelectric Materials Research II......Page 522
Silicon-Germanium Strained Layers and Heterostructures......Page 523
Semiconducting Chalcogenide Glass I......Page 524
Conducting Organic Materials and Devices......Page 525