Spintronic 2D Materials: Fundamentals and Applications (Materials Today)

Spintronic 2D Materials
Copyright
Contents
List of contributors
Preface
1 Introduction to spintronics and 2D materials
	1.1 Spin and spin ordering
	1.2 The discovery of giant magnetoresistance and tunnelling magnetoresistance
	1.3 Semiconductor spintronics: dilute magnetic semiconductor and spin field-effect transistor
	1.4 2D materials and magnetism in 2D materials
	1.5 Overview of this book
	References
2 Rashba spin–orbit coupling in two-dimensional systems
	2.1 The origin of Rashba spin–orbit coupling
		2.1.1 From Dirac to Pauli…
		2.1.2 … and back again
		2.1.3 Spin-splitting in semiconducting quantum wells
		2.1.4 Metallic surfaces
		2.1.5 Induced Rashba spin–orbit coupling
		2.1.6 Topological insulators
		2.1.7 Topological semimetals
	2.2 Fundamental signatures
		2.2.1 Energy dispersion and spin texture
		2.2.2 Electron dipole spin resonance
		2.2.3 Quantum oscillations
		2.2.4 Weak antilocalization
	2.3 Spin–orbit transport
		2.3.1 Spin-charge conversion effects
		2.3.2 Persistent spin helix
		2.3.3 Spin and charge pumping
		2.3.4 Zitterbewegung effect
		2.3.5 Quantum anomalous Hall and magnetoelectric effects
		2.3.6 Floquet physics in spin–orbit coupled systems
	2.4 Rashba devices
		2.4.1 Aharonov–Casher interferometer
		2.4.2 Datta–Das spin field-effect transistor
		2.4.3 Spin–orbit torques devices
		2.4.4 Spin–orbit Qubits
	2.5 Outlook and conclusion
	References
3 Two-dimensional ferrovalley materials
	3.1 Valleytronics in 2D hexagonal lattices
	3.2 Valley polarization induced by external fields
	3.3 Ferrovalley materials with spontaneous valley polarization
		3.3.1 VSe2-Ferrovalley materials induced by ferromagnetism
		3.3.2 Bilayer VSe2-antiferrovalley materials
		3.3.3 GeSe-Ferrovalley materials induced by ferroelectricity
	3.4 Summary and outlook
	References
4 Ferromagnetism in two-dimensional materials via doping and defect engineering
	4.1 Introduction
	4.2 Ferromagnetism in graphene
	4.3 Ferromagnetism in boron nitride
	4.4 Ferromagnetism in phosphorene
	4.5 Ferromagnetism of transition-metal dichalcogenide: MoS2
	4.6 Ferromagnetism in two-dimensional metal oxide: SnO
	4.7 Conclusion and prospective
	References
5 Charge-spin conversion in 2D systems
	5.1 Overview
	5.2 Introduction
	5.3 Spin generation
		5.3.1 Spin-polarized charge current
		5.3.2 Spin injection into nonmagnetic materials
		5.3.3 Pure spin current
	5.4 Spin detection
		5.4.1 Spin accumulation voltage
		5.4.2 Inverse spin Hall effect
		5.4.3 Magnetoresistance
	5.5 Outlook
		5.5.1 New materials and heterostructures
		5.5.2 New techniques and characterizations
		5.5.3 New device architectures and functionalities
	References
6 Magnetic properties of graphene
	6.1 Significance of magnetic graphene
	6.2 Primary theory of magnetism of graphene—Lieb’s theorem
	6.3 General methods for inducing localized magnetic moments in graphene
		6.3.1 Vacancy approach
		6.3.2 Edge approach
			6.3.2.1 Graphene quantum dots
			6.3.2.2 Graphene nanoribbon
			6.3.2.3 Edge passivation
		6.3.3 The sp3-type approach
			6.3.3.1 Hydrogen-doping approach
			6.3.3.2 Fluorine-doping approach
			6.3.3.3 Hydroxyl-doping approach
	6.4 Conclusion and outlook
	6.5 Acknowledgments
	References
7 Experimental observation of low-dimensional magnetism in graphene nanostructures
	7.1 Introduction
	7.2 Electron–electron interaction in graphene
	7.3 Magnetism in finite graphene fragment
	7.4 Edges in graphene nanoribbons
	7.5 Magnetism induced by defects in graphene nanostructures
	7.6 Summary and outlook
	References
8 Magnetic topological insulators: growth, structure, and properties
	8.1 Introduction
	8.2 Crystal structure and thin film grown by molecular-beam epitaxy
		8.2.1 Crystal structures
		8.2.2 Thin film grown by molecular-beam epitaxy
			8.2.2.1 Film grown on conventional semiconductors
			8.2.2.2 Films grown on two-dimensional materials
	8.3 Magnetic topological insulator
		8.3.1 Transition metal–doped topological insulator
		8.3.2 Magnetic properties
		8.3.3 Novel phenomena based on magnetic topological insulators
	8.4 Magnetic proximity effect in topological insulator–based heterojunctions
		8.4.1 Topological insulators/ferromagnetic metal
		8.4.2 Topological insulators/ferromagnetic insulators
		8.4.3 Doped topological insulators/ferromagnetic metal
		8.4.4 Doped topological insulators/ferromagnetic insulators
	8.5 Spin-transfer torque/spin–orbital torque in topological insulators
		8.5.1 Spin–momentum locking in topological insulators
			8.5.1.1 Spin-resolved angle-resolved photoelectron spectroscopy
			8.5.1.2 Electrical detection
		8.5.2 Theoretically predicted spin-transfer torque/spin–orbital torque in topological insulators
		8.5.3 Spin–orbital torque in topological insulators
		8.5.4 Magnetic random access memory based on topological insulators
	8.6 Summary and outlook
	References
9 Growth and properties of magnetic two-dimensional transition-metal chalcogenides
	9.1 Introduction
	9.2 Fundamentals of molecular beam epitaxy for two-dimensional transition-metal chalcogenides
		9.2.1 Uniqueness of molecular beam epitaxy
		9.2.2 Concept of van der Waals epitaxy
		9.2.3 Technical aspects of van der Waals epitaxy
	9.3 Growth and properties of magnetic two-dimensional transition-metal chalcogenides
		9.3.1 Extrinsic magnetism in two-dimensional transition-metal chalcogenides
		9.3.2 Intrinsic magnetism in two-dimensional transition-metal chalcogenides
			9.3.2.1 VX2 (X=S, Se)
			9.3.2.2 MnX2 (X=S, Se)
			9.3.2.3 CrXTe3 (X=Si, Ge, Sn)
			9.3.2.4 Fe3GeTe2
	9.4 Opportunities and challenges
		9.4.1 Fundamental issues of van der Waals epitaxy
		9.4.2 Molecular doping
		9.4.3 Hybrid three-dimensional/two-dimensional structures
	9.5 Summary
	Acknowledgment
	References
10 Spin-valve effect of 2D-materials based magnetic junctions
	10.1 Introduction
	10.2 Theoretical model
	10.3 Growth of two-dimensional materials and device fabrication
	10.4 Tungsten disulfide–based spin-valve device
	10.5 Molybdenum disulfide–based spin-valve device
	10.6 Spin-valve effect in Fe3O4/MoS2/Fe3O4
	10.7 Comparison between transition metal dichalcogenide’s with different two-dimensional materials-based spin valves
	10.8 Summary
	References
11 Layered topological semimetals for spintronics
	11.1 Introduction
		11.1.1 Introduction to Spintronics
			11.1.1.1 Spin transport in graphene
			11.1.1.2 Spin current in topological insulators
		11.1.2 Topological semimetals
			11.1.2.1 Type-I Dirac semimetals
			11.1.2.2 Type-II Dirac semimetals
			11.1.2.3 Type-II Weyl semimetals
			11.1.2.4 Topological nodal-line semimetals
	11.2 The strong spin–orbital coupling in topological semimetals
	11.3 Fermi arcs
		11.3.1 Fermi arcs in WTe2
		11.3.2 Fermi arcs in MoxW1−xTe2
	11.4 Two-dimensional topological insulators
		11.4.1 Two-dimensional topological insulators in quantum well
		11.4.2 Two-dimensional topological insulators in WTe2
		11.4.3 Two-dimensional topological insulators in ZrTe5
	11.5 Majorana fermions
	11.6 Summary and outlook
	References
Index