Silicon Molecular Beam Epitaxy

Content: 
EUROPEAN MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS, Page ii
Front Matter, Page iii
Copyright, Page iv
Preface, Page v
Sponsors, Page vi
SI-GE STRAINED LAYER SUPERLATTICES, Pages 1-8, GERHARD ABSTREITER
OPTICAL PROPERTIES OF STRAINED Ge–Si SUPERLATTICES GROWN ON (001)Ge, Pages 9-16, T.P. PEARSALL, R. HULL, J.C. BEAN, J.M. BONAR
GROWTH AND CHARACTERIZATION OF Si–Ge ATOMIC LAYER SUPERLATTICES, Pages 17-24, J.-M. BARIBEAU, D.J. LOCKWOOD, M.W.C. DHARMA-WARDANA, N.L. ROWELL, J.P. MCCAFFREY
STUDY OF HOLE TRANSPORT THROUGH MINIBANDS IN SYMMETRICALLY STRAINED GexSi1 − x/Si SUPERLATTICES, Pages 25-31, J.S. PARK, R.P.G. KARUNASIRI, K.L. WANG
ELECTRONIC STRUCTURE OF ULTRATHIN SinGen STRAINED SUPERLATTICES: THE POSSIBILITY OF DIRECT BAND GAPS, Pages 33-48, SVERRE FROYEN, D.M. WOOD, ALEX ZUNGER
OPTICAL PROPERTIES OF PERFECT AND IMPERFECT Si–Ge SUPERLATTICES, Pages 49-55, K.B. WONG, R.J. TURTON, M. JAROS
INVESTIGATION OF SimGen STRAINED MONOLAYER SUPERLATTICES BY RHEED, RAMAN, AND X-RAY TECHNIQUES, Pages 57-63, V. ARBET, S.J. CHANG, K.L. WANG
CONFINED PHONONS IN STRAINED SHORT-PERIOD (001) Si/Ge SUPERLATTICES, Pages 65-70, W. BACSA, M. OSPELT, J. HENZ, H. VON KÄNEL, P. WACHTER
CALCULATION OF ENERGIES AND RAMAN INTENSITIES OF CONFINED PHONONS IN Si–Ge STRAINED LAYER SUPERLATTICES, Pages 71-77, J. WHITE, G. FASOL, R.A. GHANBARI, C.J. GIBBINGS, C.G. TUPPEN
RELAXATION OF COHERENT STRAIN IN Si1 − xGex/Si SUPERLATTICES AND ALLOYS, Pages 79-86, R.J. HAUENSTEIN, R.H. MILES, E.T. CROKE, T.C. MCGILL
STRAIN ADJUSTMENT IN ULTRA THIN Si/Ge SUPERLATTICES, Pages 87-93, E. KASPER, H. KIBBEL, H. PRESTING
IMPROVEMENT OF STRUCTURAL PROPERTIES OF Si/Ge SUPERLATTICES, Pages 95-103, K. EBERL, E. FRIESS, W. WEGSCHEIDER, U. MENCZIGAR, G. ABSTREITER
PHONONS IN Si/Ge SUPERLATTICES: THEORY AND EXPERIMENT, Pages 105-110, E.A. MONTIE, G.F.A. VAN DE WALLE, D.J. GRAVESTEIJN, A.A. VAN GORKUM, W.J.O. TEESSELINK
A PHOTOLUMINESCENCE STUDY OF Si/Ge SUPERLATTICES, Pages 111-116, E.A. MONTIE, G.F.A. VAN DE WALLE, D.J. GRAVESTEIJN, A.A. VAN GORKUM, E.C. COSMAN, C.W. FREDRIKSZ, C.W.T. BULLE-LIEUWMA
STRAIN RELAXATION PHENOMENA IN GexSi1 − x/Si STRAINED STRUCTURES, Pages 117-132, R. HULL, J.C. BEAN, D.J. EAGLESHAM, J.M. BONAR, C. BUESCHER
MISFIT DISLOCATIONS IN ANNEALED Si1 − xGex/Si HETEROSTRUCTURES, Pages 133-139, C.G. TUPPEN, C.J. GIBBINGS
HETEROGENEOUS NUCLEATION SOURCES IN MOLECULAR BEAM EPITAXY-GROWN GexSi1 − x/Si STRAINED LAYER SUPERLATTICES, Pages 141-156, D.D. PEROVIC, G.C. WEATHERLY, J.-M. BARIBEAU, D.C. HOUGHTON
REDUCTION OF DISLOCATION DENSITY OF MBE-GROWN Si1 − xGex LAYERS ON (100) Si BY RAPID THERMAL ANNEALING, Pages 157-164, B. HOLLÄNDER, S. MANTL, W. JÄGER, F. SCHÄFFLER, E. KASPER
CHEMICAL ORDERING AND BOUNDARY STRUCTURE IN CRYSTALLINE Si–Ge SUPERLATTICES, Pages 165-170, E. MÜLLER, H.-U. NISSEN, M. OSPELT, H. VON KÄNEL, P. STADELMANN
THE STRUCTURAL STABILITY OF UNCAPPED VERSUS BURIED Si1 − xGex STRAINED LAYERS THROUGH HIGH TEMPERATURE PROCESSING, Pages 171-182, D.C. HOUGHTON, C.J. GIBBINGS, C.G. TUPPEN, M.H. LYONS, M.A.G. HALLIWELL
GERMANIUM DIFFUSION AND STRAIN RELAXATION IN Si/Si1 − xGex/Si STRUCTURES, Pages 183-190, G.F.A. VAN DE WALLE, L.J. VAN IJZENDOORN, A.A. VAN GORKUM, R.A. VAN DEN HEUVEL, A.M.L. THEUNISSEN, D.J. GRAVESTEIJN
Ge SEGREGATION DURING MOLECULAR BEAM EPITAXIAL GROWTH OF Si1 − xGex/Si LAYERS, Pages 191-196, D.J. GRAVESTEIJN, P.C. ZALM, G.F.A. VAN DE WALLE, C.J. VRIEZEMA, A.A. VAN GORKUM, L.J. VAN IJZENDOORN
HYDROGEN-TERMINATED SILICON SUBSTRATES FOR LOW-TEMPERATURE MOLECULAR BEAM EPITAXY, Pages 197-212, P.J. GRUNTHANER, F.J. GRUNTHANER, R.W. FATHAUER, T.L. LIN, M.H. HECHT, L.D. BELL, W.J. KAISER, F.D. SCHOWENGERDT, J.H. MAZUR
THE INITIAL STAGES OF GROWTH OF SILICON ON Si(111) BY SLOW POSITRON ANNIHILATION LOW-ENERGY ELECTRON DIFFRACTION, Pages 213-220, M. HORN VON HOEGEN, J. FALTA, M. HENZLER
INTERACTION OF STRUCTURE WITH KINETICS IN Si(001) HOMOEPITAXY, Pages 221-227, S. CLARKE, M.R. WILBY, D.D. VVEDENSKY, T. KAWAMURA
SURFACE STEP STRUCTURE OF A LENS-SHAPED Si(001) VICINAL SUBSTRATE, Pages 229-233, KUNIHIRO SAKAMOTO, KAZUSHI MIKI, TSUNENORI SAKAMOTO
PHOTOLUMINESCENCE CHARACTERIZATION OF MOLECULAR BEAM EPITAXIAL SILICON, Pages 235-254, E.C. LIGHTOWLERS, V. HIGGS, M.J. GREGSON, G. DAVIES, S.T. DAVEY, C.J. GIBBINGS, C.G. TUPPEN, F. SCHÄFFLER, E. KASPER
RIPPLED SURFACE TOPOGRAPHY OBSERVED ON SILICON MOLECULAR BEAM EPITAXIAL AND VAPOUR PHASE EPITAXIAL LAYERS, Pages 255-262, A.J. PIDDUCK, D.J. ROBBINS, I.M. YOUNG, G. PATEL
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION AND SCANNING TUNNELLING MICROSCOPY STUDY OF SINGLE-DOMAIN GROWTH DURING SILICON MOLECULAR BEAM EPITAXY ON Si(001), Pages 263-271, A.J. HOEVEN, E.J. VAN LOENEN, D. DIJKKAMP, J.M. LENSSINCK, J. DIELEMAN
THE 698 meV OPTICAL BAND IN MBE SILICON, Pages 273-280, NORBERT DE MELLO, GORDON DAVIES, E.C. LIGHTOWLERS, VICTOR HIGGS, C.J. GIBBINGS, C.G. TUPPEN
DOPANT INCORPORATION KINETICS AND ABRUPT PROFILES DURING SILICON MOLECULAR BEAM EPITAXY, Pages 281-297, J.-E. SUNDGREN, J. KNALL, W.-X. NI, M.-A. HASAN, L.C. MARKERT, J.E. GREENE
THE MEASUREMENT OF SURFACE BORON ON SILICON WAFERS ANNEALED IN VACUUM AND GAS AMBIENTS, Pages 299-306, D.J. ROBBINS, A.J. PIDDUCK, J.L. GLASPER, I.M. YOUNG, C. PICKERING
LOW TEMPERATURE KINETICS OF Si(100) MBE GROWTH, Pages 307-313, H. JORKE, H. KIBBEL, F. SCHÄFFLER, H.-J. HERZOG
INFLUENCE OF SUBSTRATE ORIENTATION ON SURFACE SEGREGATION PROCESS IN SILICON-MBE, Pages 315-322, KIYOKAZU NAKAGAWA, MASANOBU MIYAO, YASUHIRO SHIRAKI
GROWTH AND TRANSPORT PROPERTIES OF SimSb1 SUPERLATTICES, Pages 323-330, H. JORKE, H. KIBBEL
ELECTRICAL CHARACTERIZATION AND SUBBAND STRUCTURES IN ANTIMONY δ-DOPED MOLECULAR BEAM EPITAXY-SILICON LAYERS, Pages 331-338, HUI-MIN LI, WEI-XIN NI, MAGNUS WILLANDER, KARL-FREDRIK BERGGREN, BO E. SERNELIUS, GÖRAN V. HANSSON
EQUIPMENT OF A 3-INCH SILICON MOLECULAR BEAM EPITAXIAL SYSTEM WITH SCANNING TUNNELLING MICROSCOPY, Pages 339-344, R. BUTZ, H. WAGNER, K. BESOCKE
A MONTE CARLO STUDY OF THE SILICON FILM GROWTH FROM MOLECULAR BEAMS, Pages 345-350, L.N. ALEKSANDROV, A.N. KOGAN, N.P. TIKHONOVA
ELECTRICAL PROPERTIES OF GALLIUM- AND ANTIMONY-DOPED SILICON LAYERS, GROWN BY SOLID PHASE EPITAXY IN A MOLECULAR BEAM EPITAXIAL GROWTH CHAMBER, Pages 351-356, A. CASEL, H. KIBBEL, F. SCHÄFFLER
STRUCTURE OF AMORPHOUS SILICON LAYERS DEPOSITED UNDER ULTRAHIGH VACUUM AT DIFFERENT SUBSTRATE TEMPERATURES, Pages 357-362, A.F. VYATKIN, L.E. FARBER, A.S. AVILOV, S.N. OREKHOV
Author Index, Pages 363-364
Subject Index, Pages 365-367