Selected Topics in Group IV and II–VI Semiconductors

Content: 
EUROPEAN MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS, Page ii
Front Matter, Page iii
Copyright, Page iv
SIXTH INTERNATIONAL SYMPOSIUM ON SILICON MOLECULAR BEAM EPITAXY: Strasbourg, France, May 22–26, 1995, Page vii
Sponsors, Page viii
Preface, Page ix, E. Kasper, E.H.C. Parker
Front Matter, Page iii
SYMPOSIUM D ON PURIFICATION, DOPING AND DEFECTS IN II–VI MATERIALS: Strasbourg, France, May 22–24, 1995, Page v
Sponsors, Page vi
Quantitative analysis of light emission from SiGe quantum wells, Pages 1-10, S. Fukatsu, H. Akiyama, Y. Shiraki, H. Sakaki
Optimisation and stability of optical spectra of novel Si–Ge quantum well structures in an external electric field, Pages 11-14, M. Jaros, G. Elfardag, J.P. Hagon, R.J. Turton, K.B. Wong
Room-temperature luminescence from Si/Ge single quantum well diodes grown by molecular beam epitaxy, Pages 15-20, H. Presting, T. Zinke, O. Brux, M. Gail, G. Abstreiter, H. Kibbel, M. Jaros
The growth and characterization of Si1−xGex multiple quantum wells on Si(110) and Si(111), Pages 21-26, P.E. Thompson, T.L. Kreifels, M. Gregg, R.L. Hengehold, Y.K. Yeo, D.S. Simons, M.E. Twigg, M. Fatemi, K. Hobart
Intense photoluminescence from Si-based quantum well structures with neighboring confinement structure, Pages 27-30, N. Usami, Y. Shiraki, S. Fukatsu
Influence of surfactants on molecular beam epitaxial grown SiGe single quantum wells studied by photoluminescence and secondary ion mass spectroscopy investigations, Pages 31-35, H.P. Zeindl, S. Nilsson, J. Klatt, D. Krüger, R. Kurps
Anomalous spectral shift of photoluminescence from MBE-grown strained Si1−xGex/Si quantum wells mediated by atomic hydrogen, Pages 36-39, G. Ohta, S. Fukatsu, N. Usami, Y. Shiraki, T. Hattori
Field-driven blue shift of excitonic photoluminescence in Si–Ge quantum wells and superlattices, Pages 40-44, J.Y. Kim, S. Fukatsu, N. Usami, Y. Shiraki
Theory of electronic and optical properties of Si/Ge superlattices, Pages 45-51, G. Theodorou, C. Tserbak
Interface morphology and relaxation in high temperature grown Si1−xGex/Si superlattices, Pages 52-56, J.-M. Baribeau
Photoluminescence study of SiGe quantum well broadening by rapid thermal annealing, Pages 57-60, H. Lafontaine, D.C. Houghton, N. Rowell, G.C. Aers, R. Rinfret
X-ray reciprocal space mapping of Si/Si1−xGex heterostructures, Pages 61-67, Günther Bauer, Jianhua Li, Ewald Koppensteiner
Test of Vegard's law in thin epitaxial SiGe layers, Pages 68-72, E. Kasper, A. Schuh, G. Bauer, B. Holländer, H. Kibbel
Spectroscopic ellipsometry for Si(1 − x)Gex characterization: comparison with other experimental techniques, Pages 73-79, Pierre Boher, Jean Philippe Piel, Jean Louis Stehle
Characterization of highly boron-doped Si, Si1−xGex and Ge layers by high-resolution transmission electron microscopy, Pages 80-84, H.H. Radamson, K.B. Joelsson, W.-X. Ni, L. Hultman, G.V. Hansson
Magnetotransport of epitaxial Si/Ge layers on Si, Pages 85-89, W. Koschinski, K. Dettmer, F.R. Kessler
Measurement of the generation lifetime in SiGe epitaxial layers using a modified Zerbst technique, Pages 90-95, S. Hall, I.S. Goh, Z.Y. Wu
Thickness measurements of Si1−xGex thin layers deposited on Si mesa structures, Pages 96-99, A. Wasserman, R. Beserman, K. Dettmer
Device quality of in situ plasma cleaning for silicon molecular beam epitaxy, Pages 100-104, W. Hansch, Eisele, H. Kibbel, U. König, J. Ramm
Electrical characteristics of Si/ ×  B/Si(111) structures by gas-source MBE, Pages 105-108, Hiroshi Uji, Satoshi Tatsukawa, Satoru Matsumoto, Hirofumi Higuchi
Electrochemical capacitance–voltage depth profiling of heavily boron-doped silicon, Pages 109-112, E. Basaran, C.P. Parry, R.A. Kubiak, T.E. Whall, E.H.C. Parker
The role of strain in silicon-based molecular beam epitaxy, Pages 113-115, Ya-Hong Xie, Paul J. Silverman
Photoluminescence characterization of Si1−xGex relaxed “pseudo-substrates” grown on Si, Pages 116-120, G. Bremond, A. Souifi, O. De Barros, A. Benmansour, P. Warren, D. Dutartre
Relaxed Si1−xGex films with reduced dislocation densities grown by molecular beam epitaxy, Pages 121-125, Martin O. Tanner, Michael A. Chu, Kang L. Wang, Marjohn Meshkinpour, Mark S. Goorsky
Relaxation of compositionally graded Si1−xGex buffers: a TEM study, Pages 126-131, M. Hohnisch, H.-J. Herzog, F. Schäffler
Dislocation patterning and nanostructure engineering in compositionally graded Si1−xGex/Si layer systems, Pages 132-136, S. Yu. Shiryaev, F. Jensen, J. Wulff Petersen, J. Lundsgaard Hansen, A. Nylandsted Larsen
Strain relaxation and misfit dislocations in compositionally graded Si1−xGex layers on Si(001), Pages 137-141, J.H. Li, V. Holy, G. Bauer, M. Hohnisch, H.-J. Herzog, F. Schäffler
Comparison of different Si/Ge alloy buffer concepts for (SimGen)p superlattices, Pages 142-146, K. Dettmer, U. Behner, R. Beserman
Ge+ ion implantation – a competing technology?, Pages 147-160, P.L.F. Hemment, F. Cristiano, A. Nejim, S. Lombardo, K.K. Larssen, F. Priolo, R.C. Barklie
Si(100) epitaxy by low-temperature UHV-CVD: AFM study of the initial stages of growth, Pages 161-167, F. Chollet, E. André, W. Vandervorst, M. Caymax
In situ RHEED and AFM investigation of growth front morphology evolution of Si(001) grown by UHV-CVD, Pages 168-171, S. Nayak, D.E. Savage, H.-N. Chu, M.G. Lagally, T.F. Kuech
Magnetron sputter epitaxy of Si/Ge heterostructures, Pages 172-176, P. Sutter, E. Müller, S. Tao, C. Schwarz, M. Filzmoser, M. Lenz, H. von Känel
Crystallization of a-Si1−xGex: decomposition and modulated structure formation features, Pages 177-180, F. Edelman, Y. Komem, P. Werner, J. Heydenreich, R. Butz, S.S. Iyer
Strain compensation in ternary Si1 − x − yGexBy films, Pages 181-184, B. Tillack, P. Zaumseil, G. Morgenstern, D. Krüger, B. Dietrich, G. Ritter
Modeling of facet growth on patterned Si substrate in gas source MBE, Pages 185-189, Shaozhong Li, Qi Xiang, Dawen Wang, Kang L. Wang
Effect of RTCVD growth conditions on the crystal quality of pseudomorphic Si1−x − yGexCy films, Pages 190-194, Jian Mi, Patricia Warren, Pascal Letourneau, Moshe Judelewicz, Marc Gailhanou, Michel Dutoit
Tunable infrared photoemission sensor on silicon using SiGe/Si epitaxial heterostructures, Pages 195-200, C. Renard, S. Bodnar, P.A. Badoz, I. Sagnes
Plasma-enhanced evaporation of SiO2 films for MBE-grown MOS devices, Pages 201-206, Alexandra Neubecker, Peter Bieringer, Walter Hansch, Ignaz Eisele
High speed SiGe heterobipolar transistors, Pages 207-214, Andreas Schüppen, Harry Dietrich
Si/Si1−xGex heterojunction bipolar transistors for microwave power applications, Pages 215-221, K.D. Hobart, F.J. Kub, N.A. Papanicoloau, W. Kruppa, P.E. Thompson
Assessment of intervalley f-scattering time constants in Si/SiGe heterostructures, Pages 222-226, F. Beisswanger, H. Jorke, H. Kibbel, H.-J. Herzog, A. Schüppen, R. Sauer
Photo-induced intersubband absorption in Si/SiGe quantum wells, Pages 227-230, P. Boucaud, L. Gao, F. Visocekas, Z. Moussa, J.-M. Lourtioz, F.H. Julien, I. Sagnes, Y. Campidelli, P.-A. Badoz, P. Vagos
Influence of base dopant out-diffusion into the emitter in Si/SiGe heterojunction bipolar transistor using Monte Carlo simulations, Pages 231-235, Sylvie Galdin, Philippe Dollfus, Mireille Mouis, Françoise Meyer, Patrice Hesto
Interface reaction between Ir films and relaxed SiGe MBE layers by rapid thermal annealing, Pages 236-241, G. Curello, R. Gwilliam, M. Harry, K.J. Reeson, B.J. Sealy, T. Rodriguez, A. Almendra
Some critical issues on growth of high quality Si and SiGe films using a solid-source molecular beam epitaxy system, Pages 242-247, W.-X. Ni, W.M. Chen, LA. Buyanova, A. Henry, G.V. Hansson, B. Monemar
Silicon nanostructure devices, Pages 248-254, I. Eisele, H. Baumgärtner, W. Hansch
Islands formation conditions in silicon–germanium alloys grown by MBE, Pages 255-259, R. Murri, N. Pinto, L. Trojani, L. Lucchetti, G. Majni, P. Mengucci
Self-organized MBE growth of Ge-rich SiGe dots on Si(100), Pages 260-264, P. Schittenhelm, M. Gail, G. Abstreiter
Photoluminescence investigation on growth mode changeover of Ge on Si(100), Pages 265-269, H. Sunamura, S. Fukatsu, N. Usami, Y. Shiraki
Local epitaxy of Si/SiGe wires and dots, Pages 270-275, J. Brunner, W. Jung, P. Schittenhelm, M. Gail, G. Abstreiter, J. Gonderman, B. Hadam, T. Koester, B. Spangenberg, H.G. Roskos, H. Kurz, H. Gossner, I. Eisele
Silicon molecular beam epitaxial growth on ultra-small mesa structures, Pages 276-279, V.S. Avrutin, N.F. Izumskaya, A.F. Vyatkin, V.A. Yunkin
Photoluminescence and Raman spectroscopy of Si/Si1−xGex quantum dots, Pages 280-284, Y.S. Tang, C.M. Sotomayor Torres, B. Dietrich, W. Kissinger, T.E. Whall, E.H.C. Parker
A silicon molecular beam epitaxy system dedicated to device-oriented material research, Pages 285-294, W.-X. Ni, J.O. Ekberg, K.B. Joelsson, H.H. Radamson, A. Henry, G.-D. Shen, G.V. Hansson
Adsorption and desorption of atomic hydrogen on Si(001) and its effects on Si MBE, Pages 295-299, Kunihiro Sakamoto, Hirofumi Matsuhata, Kazushi Miki, Tsunenori Sakamoto
Investigation of Si-substrate preparation for GaAs-on-Si MBE growth, Pages 300-303, M. Kayambaki, R. Callec, G. Constantinidis, Ch. Papavassiliou, E. Löchtermann, H. Krasny, N. Papadakis, P. Panayotatos, A. Georgakilas
Phosphorus doping in molecular beam epitaxial grown silicon and silicon/germanium using a GaP decomposition source, Pages 304-307, G. Lippert, H.J. Osten, D. Krüger
Influence of self-assembling growth on the shape and the orientation of silicon nanostructures, Pages 308-311, H. Gossner, T. Rupp, I. Eisele
Roughening of SiGe layers grown with gas-source MBE: dependence on Ge concentration and growth temperature, Pages 312-316, A.B. Storm, P.W. Lukey, K. Werner, J. Caro, S. Radelaar
Improvement of the morphological quality of the Si surface using an optimised in-situ oxide removal procedure prior to MBE growth, Pages 317-322, J. Lundsgaard Hansen, S. Yu. Shiryaev, E.V. Thomsen
Segregation of interface carbon during silicon epitaxial growth by UHV-CVD, Pages 323-326, Tohru Aoyama, Tatsuya Suzuki, Kenichi Arai, Toru Tatsumi
In situ real-time temperature and thickness measurement for Si/SiGe growth on MBE and RTCVD systems, Pages 327-332, H. Möller, F.G. Böbel, B. Hertel, T. Lindenberg, G. Ritter
Incorporation kinetics of rare earth impurities in Si during molecular beam epitaxy, Pages 333-337, K. Miyashita, D.C. Houghton, Y. Shiraki, S. Fukatsu
Growth of low-dimensional structures on nonplanar patterned substrates, Pages 338-343, Karl D. Hobart, Fritz J. Kub, Henry F. Gray, Mark E. Twigg, Dowwon Park, Phillip E. Thompson
Formation of buried a-Si/Al/Si, a-Si/Sb/Si and a-Si/B/Si interfaces and their electrical properties, Pages 344-348, A.V. Zotov, F. Wittmann, J. Lechner, S.V. Ryzhkov, V.G. Lifshits, I. Eisele
Arsenic doping in Si-MBE using low energy ion implantation (LEII), Pages 349-352, E.J.H. Collart, D.J. Gravesteijn, E.G.C. Lathouwers, W.J. Kersten
Two-dimensional hole gas in SiGe heterostructures: electrical properties and field effect applications, Pages 353-361, T.E. Whall
Radiative recombination processes in p-type modulation-doped SiGe quantum wells and Si epilayers, Pages 362-366, I.A. Buyanova, W.M. Chen, A. Henry, W.-X. Ni, G.V. Hansson, B. Monemar
Electron mobility enhancement in a strained Si channel, Pages 367-372, L. Garchery, I. Sagnes, P. Warren, J.-C. Dupuy, P.A. Badoz
Electron heating effect on transport properties in Si/SiGe modulation doped structures grown by gas source molecular beam epitaxy, Pages 373-377, A. Matsumura, T.J. Thornton, J.M. Fernández, S.N. Holmes, J. Zhang, B.A. Joyce
Hole confinement in boron δ-doped Si quantum wells studied by admittance spectroscopy, Pages 378-381, Jian-hong Zhu, Da-wei Gong, Bo Zhang, Fang Lu, Chi Sheng, Heng-hui Sun, Xun Wang
Observation of piezoelectric-like behaviour in coherently strained B-doped (100) SiGe/Si heterostructures, Pages 382-385, O.A. Mironov, V.I. Khizhny, G. Braithwaite, E.H.C. Parker, P.J. Phillips, T.E. Whall, V.P. Gnezdilov
Optical and electronic properties of SiGeC alloys grown on Si substrates, Pages 386-391, J. Kolodzey, P.R. Berger, B.A. Orner, D. Hits, F. Chen, A. Khan, X. Shao, M.M. Waite, S. Ismat Shah, C.P. Swann, K.M. Unruh
Early stages of growth of β-SiC on Si by MBE, Pages 392-399, K. Zekentes, V. Papaioannou, B. Pecz, J. Stoemenos
MBE growth of ternary SnGeSiGe superlattices, Pages 400-404, W. Dondl, E. Silveira, G. Abstreiter
Strain-stabilized structures on silicon grown with MBE, Pages 405-409, H.J. Osten, H. Rücker, M. Methfessel, E. Bugiel, S. Ruvimov, G. Lippert
Optical properties of bulk and multi-quantum well SiGe: C heterostructures, Pages 410-413, P. Boucaud, C. Guedj, D. Bouchier, F.H. Julien, J.-M. Lourtioz, S. Bodnar, J.L. Regolini, E. Finkman
Thermal stability of Si/Si1−x − yGexCy/Si heterostructures grown by rapid thermal chemical vapor deposition, Pages 414-419, Patricia Warren, Jian Mi, Frédéric Overney, Michel Dutoit
A particular epitaxial Si1 − yCy alloy growth mode on Si(001) evidenced by cross-sectional transmission electron microscopy, Pages 420-425, A. Claverie, J. Fauré, J.L. Balladore, L. Simon, A. Mesli, M. Diani, L. Kubler, D. Aubel
Molecular beam epitaxial grown Si1−xCx layers on Si(001) as a substrate for MWCVD of diamond, Pages 426-430, T. Gutheit, M. Heinau, H.-J. Füsser, C. Wild, P. Koidl, G. Abstreiter
Synthesis of epitaxial Si1 − yCy alloys on Si(001) with high level of non-usual substitutional carbon incorporation, Pages 431-435, M. Diani, L. Kubler, J.L. Bischoff, J.J. Grob, B. Prévot, A. Mesli
Realization of Si1−x − yGexCy/Si heterostructures by pulsed laser induced epitaxy of C+ implanted pseudomorphic SiGe films and of a-SiGeC:H films deposited on Si(100), Pages 436-441, J. Boulmer, P. Boucaud, C. Guedj, D. Débarre, D. Bouchier, E. Finkman, S. Prawer, K. Nugent, A. Desmur-Larré, C. Godet, P. Roca i Cabarrocas
P–T–X phase equilibrium and vapor pressure scanning of non-stoichiometry in CdTe, Pages 1-4,6-11, J.H. Greenberg
Growth and homogeneity region of CdTe, Pages 12-15, Yu.M. Ivanov
Effect of CdTe “postmelting”, Pages 16-19, L. Shcherbak, P. Feichouk, O. Panchouk
Growth and characterization of 100 mm diameter CdZnTe single crystals by the vertical gradient freezing method, Pages 20-27, T. Asahi, O. Oda, Y. Taniguchi, A. Koyama
Attempts to growth of undoped CdTe single crystals with high electrical resistivity, Pages 28-33, P. Rudolph, S. Kawasaki, S. Yamashita, S. Yamamoto, Y. Usuki, Y. Konagaya, S. Matada, T. Fukuda
Stress birefringence in vapour-grown CdTe and its correlation to the growth techniques, Pages 34-39, M. Laasch, G. Kloess, Th. Kunz, R. Schwarz, K. Grasza, C. Eiche, K.W. Benz
Comparison of Bridgman and THM method regarding the effect of In doping and distribution of Zn in CdTe, Pages 40-44, E. Weigel, G. Müller-Vogt
Growth and characterization of twin-free ZnSe single crystals by the vertical Bridgman method, Pages 45-50, T. Fukuda, K. Umetsu, P. Rudolph, H.J. Koh, S. Iida, H. Uchiki, N. Tsuboi
Vapour growth and characterization of bulk ZnSe single crystals, Pages 51-59, Yu.V. Korostelin, V.I. Kozlovsky, A.S. Nasibov, P.V. Shapkin
Seeded melt growth of ZnSe crystals under Zn partial pressure, Pages 60-63, Isao Kikuma, Tetsuya Shiohara
Incorporation of dopants and native defects in bulk Hg1−xCdxTe crystals and epitaxial layers, Pages 64-72, H.R. Vydyanath
Fundamental studies of p-type doping of CdTe, Pages 73-81, H.L. Hwang, Klaus Y.J. Hsu, H.Y. Ueng
Transmutation doping of wide-bandgap II–VI compounds, Pages 82-85, M. Wienecke, J. Bollmann, J. Röhrich, K. Maass, B. Reinhold, D. Forkel-Wirth
Generation of atomic group V materials for the p-type doping of wide gap II–VI semiconductors using a novel plasma cracker, Pages 86-89, H.-J. Lugauer, A. Waag, L. Worschech, W. Ossau, G. Landwehr
Evidence for thermodynamically stable p/n junction, formed by Ag doping of (Hg,Cd) Te, Pages 90-93, Igor Lyubomirsky, Vera Lyakhovitskaya, Jean François Guillemoles, Ilan Riess, Robert Triboulet, David Cahen
Purification methods of Cd, Te and CdTe and periodicity of segregation coefficients of admixtures, Pages 94-103, L. Kuchař, J. Drápala, J. Luňáček
Matrix and impurity element distributions in CdHgTe (CMT) and (Cd,Zn)(Te,Se) compounds by chemical analysis, Pages 104-118, P. Capper, E.S. O'Keefe, C. Maxey, D. Dutton, P. Mackett, C. Butler, I. Gale
Native defect identification in II–VI materials, Pages 119-127, B.K. Meyer, W. Stadler
Defect recovery of ion-implanted CdTe, Pages 128-133, A. Burchard, R. Magerle, J. Freidinger, S.G. Jahn, M. Deicher
Cadmium vacancy related defects in MBE grown CdTe, Pages 134-138, L. Worschech, W. Ossau, F. Fischer, A. Waag, G. Landwehr
Characterization by diffuse X-ray scattering of damage in ion-implanted HgCdTe, Pages 139-143, A. Declémy, P.O. Renault
Point defects in Te-rich CdTe, Pages 144-147, O. Panchouk, P. Fochouk, P. Feichouk
Formation of low resistance contacts to p-CdTe by annealing autocatalytically deposited Ni–P alloy coatings, Pages 148-152, R.W. Miles, B. Ghosh, S. Duke, J.R. Bates, M.J. Carter, P.K. Datta, R. Hill
Electrically active defects in detector-grade CdTe:Cl and CdZnTe materials grown by THM and HPBM, Pages 153-158, L. Chibani, M. Hage-Ali, P. Siffert
Transmission electron microscopy of CdTe/CdS based solar cells, Pages 159-163, Y.Y. Loginov, K. Durose, H.M. Al-Allak, S.A. Galloway, S. Oktik, A.W. Brinkman, H. Richter, D. Bonnet
Conductivity conversion in CdTe layers, Pages 164-167, V. Valdna, F. Buschmann, E. Mellikov
Lattice sites of Li in CdTe, Pages 168-171, M. Restle, K. Bharuth-Ram, H. Quintel, C. Ronning, H. Hofsäss, U. Wahl, S.G. Jahn
Thermal stability of substitutional Ag in CdTe, Pages 172-176, S.G. Jahn, H. Hofsäss, M. Restle, C. Ronning, H. Quintel, K. Bharuth-Ram, U. Wahl
ZnSe1−xTex solid solutions, Pages 177-180, V. Valdna, J. Hiie, U. Kallavus, A. Mere, T. Piibe
Palladium as impurity in ZnTe, Pages 181-185, S. Hermann, H.-E. Mahnke, D. Schumann, B. Spellmeyer, G. Sulzer, J. Bollmann, B. Reinhold, J. Röhrich, M. Wienecke, R. Yankov, H.-E. Gumlich
A-centers modifying in CdTe–Yb crystals, Pages 186-189, E.S. Nikonyuk, V.Z. Shlyakhovuy, M.O. Kovalets, M.I. Kuchma, Z.I. Zakharuk, V.M. Frasuniak
Luminescence and nonradiative deactivation of excited states involving oxygen defect centers in polycrystalline ZnO, Pages 190-194, H.-J. Egelhaaf, D. Oelkrug
Structural properties of CdTe and Hg1−xCdxTe epitaxial layers grown on sapphire substrates, Pages 195-200, N.V. Sochinskii, J.C. Soares, E. Alves, M.F. da Silva, P. Franzosi, S. Bernardi, E. Diéguez
Ordered phase in HgCdTe thin films grown by reactive deposition in RF mercury glow discharge, Pages 201-204, L.G. Mansurov, V.G. Savitsky
Fundamental studies on compensation mechanisms in II–VI compounds, Pages 205-213, Yves Marfaing
Self-compensation in halogen doped CdTe grown by molecular beam epitaxy, Pages 214-218, F. Fischer, A. Waag, L. Worschech, W. Ossau, S. Scholl, G. Landwehr, J. Mäkinen, P. Hautojärvi, C. Corbel
Self-compensation studies in Cd-saturated In-doped CdTe, Pages 219-222, L. Shcherbak, P. Feichouk, P. Fochouk, O. Panchouk
Two stream diffusion of Hg into CdTe, Pages 223-228, M.U. Ahmed, E.D. Jones, J.B. Mullin, N.M. Stewart
Diffusivity of mercury vacancies in Hg0.8Cd0.2Te, Pages 229-233, M. Neubert, K. Jacobs
Oscillations of the composition of HgCdTe solid solution after laser annealing, Pages 234-238, R. Ciach, M. Faryna, M. Kuźma, M. Pociask, E. Sheregii
Transition-metal impurities in II–VI semiconductors: characterization and switching of charge states, Pages 239-249, J. Kreissl, H.-J. Schulz
Influence of zinc on the photorefractive behaviour of Cd1−xZnxTe:V, Pages 250-258, G. Martel, J.Y. Moisan, B. Lambert, M. Gauneau, S. Stephan, N. Wolffer, P. Gravey, A. Aoudia, E. Rzepka, Y. Marfaing, R. Triboulet, M.C. Busch, M. Hadj-Ali, J.M. Koebel, P. Siffert, G. Bremond, A. Zerrai, G. Marrakchi
Vanadium in CdTe, Pages 259-263, P. Christmann, J. Kreissl, D.M. Hofmann, B.K. Meyer, R. Schwarz, K.W. Benz
Relationship between deep levels in vanadium-doped CdTe and photorefractive effect, Pages 264-270, A. Zerrai, G. Marrakchi, G. Bremond, J.Y. Moisan, G. Martel, M. Gauneau, B. Lambert, P. Gravey, N. Wolffer, A. Aoudia, Y. Marfaing, R. Triboulet, J.M. Koebel, M. Hadj-Ali, P. Siffert
Noncontact characterization of CdTe doped with V or Ti, Pages 271-276, C. Eiche, W. Joerger, R. Schwarz, K.W. Benz
Identification of titanium dopants in CdS, CdSe and Cd(S,Se) crystals by luminescence and EPR methods, Pages 277-281, P. Peka, M.U. Lehr, H.-J. Schulz, J. Dziesiaty, S. Müller
Deep electron states in gallium-doped CdMnTe mixed crystals, Pages 282-285, J. Szatkowski, E. Płaczek-Popko, A. Hajdusianek, B. Bieg
Defects study by photoluminescence and cathodoluminescence in vanadium doped CdZnTe, Pages 286-291, E. Rzepka, A. Lusson, A. Riviere, A. Aoudia, Y. Marfaing, R. Triboulet
Author index, Pages 442-448
Subject index, Pages 449-450
Author index, Pages 292-295
Subject index, Pages 296-297