Principles of Plasma Discharges and Materials Processing

PRINCIPLES OF PLASMA DISCHARGES AND MATERIALS PROCESSING......Page 4
CONTENTS......Page 6
PREFACE......Page 18
PREFACE TO THE FIRST EDITION......Page 22
SYMBOLS AND ABBREVIATIONS......Page 26
PHYSICAL CONSTANTS AND 
CONVERSION FACTORS......Page 34
PRACTICAL FORMULAE......Page 36
1.1 Materials processing
......Page 38
1.2 Plasmas and sheaths
......Page 43
1.3 Discharges
......Page 51
1.4 Symbols and units
......Page 57
2.1
Introduction......Page 60
2.2
Field equations, current, and voltage......Page 61
2.3
The conservation equations......Page 65
2.4
Equilibrium properties......Page 72
Problems
......Page 78
3.1 Basic
concepts......Page 80
3.2 Collision
dynamics......Page 86
3.3 Elastic
scattering......Page 92
3.4 Inelastic
collisions......Page 100
3.5 Averaging over distributions and surface effects
......Page 115
Problems
......Page 120
4.1 Basic
motions......Page 124
4.2 Nonmagnetized 
plasma dynamics......Page 130
4.3 Guiding
center motion......Page 139
4.4 Dynamics
of magnetized plasmas......Page 147
4.5 Waves
in magnetized plasmas......Page 150
4.6 Wave 
diagnostics......Page 160
Problems
......Page 166
5.1 Basic
relations......Page 170
5.2 Diffusion
solutions......Page 173
5.3 Low-pressure
solutions......Page 181
5.4 Diffusion
across a magnetic field......Page 186
5.5 Magnetic
multipole confinement......Page 192
Problems
......Page 197
6.1 Basic
concepts and equations......Page 202
6.2 The Bohm
sheath criterion......Page 205
6.3 The
high-voltage sheath......Page 212
6.4 Generalized
criteria for sheath formation......Page 215
6.5 High-voltage
collisional sheaths......Page 221
6.6 Electrostatic
probe diagnostics......Page 222
Problems
......Page 240
7.1
Introduction......Page 244
7.2 Energy
and enthalpy......Page 245
7.3 Entropy and
Gibbs free energy......Page 253
7.4 Chemical
equilibrium......Page 258
7.5 Heterogeneous
equilibrium......Page 263
Problems
......Page 268
8.1
Introduction......Page 272
8.2 Molecular
structure......Page 273
8.3 Electron
collisions with molecules......Page 278
8.4 Heavy-particle
collisions......Page 290
8.5 Reaction
rates and detailed balancing......Page 302
8.6 Optical
emission and ctinometry......Page 311
Problems
......Page 316
9.1 Elementary
reactions......Page 322
9.2 Gas-phase
kinetics......Page 326
9.3 Surface
processes......Page 336
9.4 Surface
kinetics......Page 348
Problems
......Page 357
10.1
Introduction......Page 364
10.2 Electropositive
plasma equilibrium......Page 367
10.3 Electronegative
plasma equilibrium......Page 377
10.4 Approximate
electronegative equilibria......Page 387
10.5 Electronegative
discharge experiments and simulations......Page 396
10.6 Pulsed 
discharges......Page 406
Problems
......Page 418
11. 
CAPACITIVE DISCHARGES......Page 424
11.1 Homogeneous
model......Page 425
11.2 Inhomogeneous
model......Page 436
11.3 Experiments
and simulations......Page 455
11.4 Asymmetric
discharges......Page 467
11.5 Low-frequency
RF sheaths......Page 471
11.6 Ion
bombarding energy at electrodes......Page 478
11.7 Magnetically
enhanced discharges......Page 485
11.8 Matching
networks and power measurements......Page 489
Problems
......Page 494
12. 
INDUCTIVE DISCHARGES......Page 498
12.1 High-density,
low-pressure discharges......Page 499
12.2 Other
operating regimes......Page 507
12.3 Planar coil
configuration......Page 514
12.4 Helical
resonator discharges......Page 520
Problems
......Page 524
13. 
WAVE-HEATED DISCHARGES......Page 528
13.1 Electron
cyclotron resonance discharges......Page 529
13.2 Helicon
discharges......Page 550
13.3 Surface
wave discharges......Page 564
Problems
......Page 569
14.1 Qualitative
characteristics of glow discharges......Page 572
14.2 Analysis
of the positive column......Page 576
14.3 Analysis
of the cathode region......Page 580
14.4 Hollow
cathode discharges......Page 588
14.5 Planar
magnetron discharges......Page 596
14.6 Ionized
physical vapor deposition......Page 601
Problems
......Page 605
15.1 Etch
requirements and processes......Page 608
15.2 Etching
kinetics......Page 616
15.3 Halogen
atom etching of silicon......Page 623
15.4 Other
etch systems......Page 637
15.5 Substrate
charging......Page 643
Problems
......Page 653
16.1 Introduction
......Page 656
16.2 Plasma-enhanced
chemical vapor deposition......Page 658
16.3 Sputter
deposition......Page 667
16.4 Plasma-immersion
ion implantation (piii)......Page 671
Problems
......Page 683
17.1 Qualitative
description of phenomena......Page 686
17.2 Particle
charging and discharge equilibrium......Page 688
17.3 Particulate
equilibrium......Page 695
17.4 Formation
and growth of dust grains......Page 699
17.5 Physical
phenomena and diagnostics......Page 705
17.6 Removal
or production of particulates......Page 710
Problems
......Page 712
18.1 Basic
concepts......Page 716
18.2 Local
kinetics......Page 726
18.3 Nonlocal
kinetics......Page 730
18.4 Quasi-linear
diffusion and stochastic heating......Page 736
18.5 Energy
diffusion in a skin depth layer......Page 743
18.6 Kinetic
modeling of discharges......Page 748
Problems
......Page 756
A. 
COLLISION DYNAMICS......Page 760
B. 
THE COLLISION INTEGRAL......Page 764
C.  DIFFUSION SOLUTIONS FOR 
VARIABLE MOBILITY MODEL......Page 768
REFERENCES......Page 772
INDEX......Page 786