دسترسی نامحدود
برای کاربرانی که ثبت نام کرده اند
برای ارتباط با ما می توانید از طریق شماره موبایل زیر از طریق تماس و پیامک با ما در ارتباط باشید
در صورت عدم پاسخ گویی از طریق پیامک با پشتیبان در ارتباط باشید
برای کاربرانی که ثبت نام کرده اند
درصورت عدم همخوانی توضیحات با کتاب
از ساعت 7 صبح تا 10 شب
ویرایش:
نویسندگان: Simon Deleonibus (editor)
سری: Jenny Stanford Series on Intelligent Nanosystems
ISBN (شابک) : 9815129325, 9789815129328
ناشر: Jenny Stanford Publishing
سال نشر: 2024
تعداد صفحات: 419
زبان: English
فرمت فایل : PDF (درصورت درخواست کاربر به PDF، EPUB یا AZW3 تبدیل می شود)
حجم فایل: 115 مگابایت
در صورت تبدیل فایل کتاب Outlooking beyond Nanoelectronics and Nanosystems: Ultra Scaling, Pervasiveness, Sustainable Integration, and Biotic Cross-Inspiration به فرمت های PDF، EPUB، AZW3، MOBI و یا DJVU می توانید به پشتیبان اطلاع دهید تا فایل مورد نظر را تبدیل نمایند.
توجه داشته باشید کتاب چشم انداز فراتر از نانوالکترونیک و نانو سیستم ها: مقیاس بندی فوق العاده ، فراگیر بودن ، ادغام پایدار و انسداد بیوتیک نسخه زبان اصلی می باشد و کتاب ترجمه شده به فارسی نمی باشد. وبسایت اینترنشنال لایبرری ارائه دهنده کتاب های زبان اصلی می باشد و هیچ گونه کتاب ترجمه شده یا نوشته شده به فارسی را ارائه نمی دهد.
Cover Half Title Series Page Title Page Copyright Page Table of Contents Preface Acknowledgements Introduction: Technology as a Science Intensive Enabling Social Tool I.1: From Stone Tools to High Abstraction Levels I.2: The Silicon Age, Its Marvels and Benefits Thanks to MOSFET and Integrated Circuits Technology I.3: New Way of Life, Sustainability, and Ethics I.4: Getting Off the Beaten Tracks Toward Technology and Nanosystem Innovation I.5: Artificial, Inspired by Nature or Hybridized Systems and Their Relevance I.6: The Fifth Volume of the Jenny Stanford Series on Intelligent Nanosystems Part I: Nanoelectronics, Nanosystems, and Sustainability Chapter 1: Past and Future of Integrated Circuit Technologies 1.1: Introduction 1.2: Pre-History Transistor/LSI Development 1.3: From the Idea of MOSFET to Real Device 1.4: MOSFET to LSI 1.5: Limit of Device Miniaturization 1.6: Miniaturization Limit by Power Consumption Increase 1.7: Miniaturization Limit by Leakage Current 1.7.1: Punch-Through Current 1.7.2: Direct-Tunneling Current 1.7.3: Subthreshold Leakage Current 1.7.4: Gate Insulator Leakage Current 1.8: Miniaturization Limit by Other Reasons 1.9: Future Prediction by IRDS 2022 1.10: Long-Term Future 1.11: Conclusions Chapter 2: Towards Life Cycle Thinking and Judicious Ecodesign for the Internet of Things (IoT) : Current Practices and Perspectives 2.1: Context and Introduction 2.1.1: The IoT: A Wide Ecosystem with Several Layers of Abstraction 2.1.2: Positive and Negative Effects of IoT 2.1.2.1: Direct effects in the producion phase 2.1.2.2: Direct effects in the use phas 2.1.2.3: Direct effects in the end-of-life phase 2.1.3: Structure of this Chapter 2.2: Challenges of Ecodesign 2.2.1: Product Design Process (PDP) and Ecodesign 2.2.2: Ecodesign Tools 2.3: Fundamentals of Life Cycle Assessment 2.3.1: LCA Methodology 2.3.2: LCA for IoT: Overview of Existing Tools 2.4: Illustrate LCA and Ecodesign in Several Layers of the IoT Ecosystem Through Specific Examples 2.4.1: Customer Requirements and Application Layer 2.4.2: Ecodesign Actions in Mutualized Infrastructure 2.4.3: Ecodesign Actions in IoT, Local Area Networks 2.4.4: Ecodesign Actions in the IoT Product and Devices 2.4.5: Environmental Considerations in the Manufacturing of IoT Devices 2.4.6: Supply Chain Considerations in LCA for IoT Devices 2.4.7: Limitations 2.5: Conclusions 2.6: Perspectives and Further Work Part II: Off the Beaten Tracks for Future Pervasive Nanosystems Technology Chapter 3: Helium-Ion Microscopy and Its Applications in Nanoscale Devices 3.1: Helium-Ion Microscope Instrumentation 3.1.1: Gas Field Ion Source 3.1.1.1: A short history of focused ion beam sources 3.1.1.2: Gas field ion source 3.1.2: Ion Opticsm 3.1.3: Detectors 3.1.3.1: Secondary electron imaging 3.1.3.2: Backscattered ion imaging 3.1.3.3: Rutherford backscattering in HIM 3.1.3.4: Secondary ion mass spectroscopy in HIM 3.1.3.5: Ion luminescence (IL) in HIM 3.1.3.6: Scanning transmission ion microscopy in HIM 3.1.4: Other Instrumentation and Accessories 3.1.4.1: Vacuum system 3.1.4.2: Cryosystem 3.1.4.3: Vibration isolation 3.1.5: Other Addons in HIM 3.1.5.1: Charge compensation 3.1.5.2: Gas injection system 3.1.5.3: Heating & cooling 3.1.5.4: Atomic force microscopy 3.1.5.5: Others 3.2: Graphene Nanostructure Devices with a Prospective Fabrication Tool – Helium-Ion Beams 3.2.1: Sub-10 nm Graphene Nanoribbon 3.2.1.1: Nano-fabrication processes 3.2.1.2: Sub-10 nm graphene nanoribbon functional device 3.2.2: Sub-10 nm Graphene Nanomesh 3.2.2.1: Nano-fabrication processes 3.2.2.2: Applications in electronic engineering: Activation energy tuning 3.2.2.3: Application in phonon engineering: Thermal rectification 3.3: Defect Engineering of Graphene for Carrier Conduction Control 3.3.1: Effect of Helium-Ion Irradiation on Carrier Transport in Graphene 3.3.2: Carrier Localization in Helium-Ion-Irradiated Graphene 3.3.3: Application of Defective Graphene to Transistors 3.4: Superconducting Oxide Nano Electronics Directly Written with a Focused Helium-Ion Beam 3.4.1: Introduction to Superconductive Electronics 3.4.2: High-Transition Temperature Oxide Superconductors 3.4.3: Focused Helium-Ion Beam Direct-Write Patterning of Superconductors 3.4.4: Focused Helium-Ion Beam Josephson Junctions 3.4.4.1: Nanowire Josephson junctions 3.4.4.2: Helium-ion beam fabrication of passive components 3.4.5: Applications 3.4.5.1: Superconducting quantum interference devices 3.4.5.2: Digital electronics 3.4.5.3: Large-scale Josephson junction array Chapter 4: Diamond Quantum Sensors Based on Spin-Qubit of NV Centers 4.1: Introduction 4.2: Physical Properties and Materials 4.2.1: Physical Properties of the NV Center in Diamond and Quantum Sensing Using NV Centers 4.2.2: Formaton of NV Centers in Diamond for Quantum Sensors 4.3: Diamond Quantum Sensors and Applications 4.3.1: Millimeter-Scale Magnetocardiography of Living Rats 4.3.2: High-Precision Simultaneous Monitoring of Current and Temperature of Electric Vehicle Batteries 4.3.3: Wide Temperature Operation of Diamond Quantum Sensor 4.3.4: Internal Sensing in Power Devices 4.3.4.1: Internal electric-field sensing in diamond power devices 4.3.4.2: Internal temperature sensing in 4H-SiC power devices 4.4: Conclusion Chapter 5: Thin-Film Batteries and Pervasion to Unconventional Applications 5.1: Introduction 5.2: Thin-Film Batteries and Key Features 5.2.1: TFB Description 5.2.2: Key Features 5.3: Toward More Functions for Thin-Film Batteries 5.3.1: Ionotronics and Energy Storage: A General Trend 5.3.2: In-Memory Energy Concept: Dual Energy/Information Storage 5.4: Conclusions Part III: Inspirations from Nature and Unifying Concepts for Future (Beyond) Technologies Chapter 6: Memristor, Neuron, and Edge of Chaos Kernel 6.1: Introduction 6.1.1: Galvani’s 242-Year-Old Enigma 6.1.2: Hodgkin–Huxley’s Blunder 6.2: Chua’s Riddle 6.2.1: Resolution of Chua’s Riddle 6.2.2: Circuit-Theoretic Properties of Chua’s Riddle Circuit 6.2.3: Edge of Chaos Kernel 6.3: Hodgkin–Huxley’s Mistaken Identity: Their Erroneous Time-Varying Conductance Are Time-Invariant Memristors 6.3.1: Potassium Time-Varying Conductance Is Not a Resistor but a Time-Invariant Memristor 6.3.2: Sodium Time-Varying Conductance Is Not a Resistor but a Time-Invariant Memristor 6.3.3: Hodgkin–Huxley Circuit Model Is Made of Memristors Blessed with an Edge of Chaos Kernel 6.3.4: Life Is Impossible Without Edge of Chaos Kernel 6.3.4.1: Memristor model of the heart’s Purkinje fibers harbors an Edge of Chaos Kernel 6.3.4.2: Two-memristor model of the Balanus Nubilus Harbors two Edge of Chaos Kernels 6.3.4.3: One-memristor model of the Balanus Nubilus Harbors only one Edge of Chaos Kernel 6.3.4.4: The Chua corsage memristor: Simplest electronic device blessed with an Edge of Chaos Kernel 6.4: Galvani’s 242-Year-Old “All-Or-None” Enigma Finally Resolved 6.4.1: Apocalypse Via Vector Field Metamorphosis 6.4.2: From All to None Gently Chapter 7: Nanostructured Systems Based on the Approach of Biological Engineering 7.1: Nanostructured Systems 7.1.1: Nanostructured Systems for Biomedical and Biological Applications 7.1.2: Role of Biological Engineering in the Assembly of Smart Nanostructured Systems 7.2: Naturally Smart Nanostructured Systems in Biology 7.3: Biological Engineering of Smart Nanostructured Systems 7.3.1: Genetic Manipulations to Transform the Function of Cells to Achieve Therapeutic Benefits 7.3.1.1: Biological control of insulin section in pancreatic β cells 7.3.1.2: Genetic engineering of an “artificial β cell” 7.3.2: Ion Transport Proteins Are the Smart Components for Nanostructured Systems 7.3.3: Biological Engineering of Systems to Provide Power 7.3.4: Can a Biofuel Cell be Defined as a Symbiotic Medical Device “Symbio-Bot”? 7.4: Overcoming Constraints to Allow Nanostructured Systems to Function in the Body 7.4.1: Why Does This “Symbio-Bot” Vision Propose a Transformation of the Paradigm for Medical Devices and Health? 7.4.2: What Benefit Would This Shift in Paradigm Have for the Development of Symbiotic Medical Devices? 7.4.3: What Benefit Would This Shift in Paradigm Have for Socio-Ethics Issues? 7.4.4: What Is the Position of “Symbio-Bots” Within the Industrial, Healthcare, and Medical Device Framework in Europe? 7.5: Concluding Remarks Index