Optical Properties of Semiconductors

Front Matter....Pages i-viii
Influence of Magnetic Fields and High Pressures on Energy Spectra of Semiconductors....Pages 5-16
Experimental Method....Pages 16-29
Influence of Magnetic Fields on Emission Spectra of p-n Junctions in InAs, InSb, and PbSe....Pages 29-47
Magnetically Tuned Stimulated Raman Emission from Indium Antimonide....Pages 47-55
Influence of Pressure on Radiation Emitted from Lead Selenide and Gallium Arsenide Semiconductor Lasers....Pages 55-63
Energy Spectra and Collective Properties of Excitons in Semiconductors....Pages 73-85
Methods Used in Far-Infrared Investigations of Excitons in Semiconductors....Pages 85-93
Far-Infrared Resonance Absorption in Condensed Exciton Phase in Germanium....Pages 93-115
Resonance Luminescence of Condensed Exciton Phase in Germanium....Pages 115-124
Photoionization and Excitation of Free Excitons in Germanium by Submillimeter Radiation....Pages 124-130
Collective Interactions of Excitons in Semiconductors....Pages 134-135
Measurement Method....Pages 136-144
Photoluminescence of Gallium Arsenide....Pages 144-161
Chapter IV Change in Absorption Coefficient of Undoped GaAs due to Strong Optical Excitation....Pages 161-164
Chapter V Investigation of Photoluminescence Spectra of Silicon at Different Optical Excitation Rates....Pages 164-174
Chapter VI Photoelectric Properties of Silicon at High Optical Excitation Rates....Pages 174-179