Frontiers in Electronics (Selected Topics in Electronics and Systems)

CONTENTS......Page 20
Preface......Page 6
Photographs at WOFE 2004......Page 10
I. Frontiers in Electronics: Technology Trends and Future Concepts......Page 25
Are we at the End of CMOS Scaling?......Page 27
3D Size Effects in Advanced SOI Devices......Page 33
Frontiers of Nano-Bio System......Page 55
Challenges For Future Semiconductor Manufacturing......Page 67
Nanoelectronics - Opportunities and Challenges......Page 107
Asymmetric Tunneling Source MOSFETS: A Novel Device Solution for Sub-100nm CMOS Technology......Page 119
II. CMOS Technology: Nanoscale Physics New Materials and Structures......Page 127
Analysis of the Effects of Strain in Ultra-Thin SOI MOS Devices......Page 129
Device Simulation Demands of Upcoming Microelectronics Devices......Page 139
SON (Silicon On Nothing) Platform for ULSI Era: Technology & Devices......Page 161
Highly Scaled CMOS Device Technologies with New Structures and New Materials......Page 171
Performance Limitations of Si CMOS and Alternatives for Nanoelectronics......Page 199
CMOS Devices Architectures and Technology Innovations for the Nanoelectronics Era......Page 217
Novel Dielectric Materials for Future Transistor Generations......Page 245
Part I: Bond Strain and Defects at Si-SiO2 and Dielectric Interfaces in High-k Gate Stacks......Page 265
Part II: Conduction Band-Edge States Associated with Removal of d-State Degeneracies by the Static Jahn-Teller Effect......Page 287
Advanced Cooling Technologies For Microprocessors......Page 325
A New Approach to Characterize and Predict Lifetime of Deep-Submicron NMOS Devices......Page 339
Undoped Body Symmetric Double Gate MOSFET Modeling......Page 349
III. CMOS Technology: Device and Process Characterization......Page 375
Study of the Gate Insulator/Silicon Interface Utilizing Soft and Hard X-Ray Photoelectron Spectroscopy at SPring-8......Page 377
Deformable Electronic Surfaces......Page 389
Current Issues and Future Prospects of Lithography......Page 399
A Theoretical Study of Point Defects in Zirconia-Silicon Interfaces......Page 413
Elastomeric Interconnects......Page 421
IV. Nanowire/Nanotube and Quantum Device......Page 433
On the Possibility of an Intersubband Laser in Silicon-on-Insulator......Page 435
Toward Ultra-Low Power III-V Quantum Large Scale Integrated Circuits for Ubiquitous Network Era......Page 445
Ballistic Electron Acceleration Negative-Differential-Conductivity Devices......Page 461
Current Instability and Plasma Wave Generation in Ungated Two Dimensional Electron Layers......Page 467
V. Spintronics and Emerging High-Speed Devices......Page 477
High-Power Switching Using III-Nitride Metal-Oxide-Semiconductor Heterostructures......Page 479
Recent Progress on GaN-Based Electron Devices......Page 493
Advancements in Nanoelectronic SONOS Nonvolatile Semiconductor Memory (NVSM) Devices and Technology......Page 503
A Quantum Dot Microcavity Terahertz Laser......Page 527
The Growth and Characterization of Room Temperature Ferromagnetic Wideband-Gap Materials For Spintronic Applications......Page 539
Enhancing Power Electronic Devices with Wide Bandgap Semiconductors......Page 569
VI. Optoelectronics......Page 581
Feasibility of an Optical Frequency Modulation System for Free-Space Optical Communications......Page 583
Recent Development of Sb-Based Phototransistors in the 0.9- to 2.2-um Wavelength Range For Applications to Laser Remote Sensing......Page 591
Ultra Violet Detection Sensors......Page 607
Tunable Coherent Radiation from Terahertz to Microwave by Mixing Two Infrared Frequencies in a 47-mm-Long GaSe Crystal......Page 613
High Power Type-I GaSb-Based Lasers......Page 621
VII. Terahertz Devices and Concepts......Page 631
Bio-Molecular Inspired Electronic Architectures for Enhanced Sensing of THz-Frequency Bio-Signatures......Page 633
Spin Dependent Transport in Quantum and Classically Configured Devices......Page 663
Biologically-Inspired Chemically-Directed Self-Assembly of Semiconductor Quantum-Dot-Based Systems: Phonon-Hole Scattering in DNA Bound to DNA-Quantum-Dot Complexes......Page 683
Terahertz Signal Transmission in Molecular Systems......Page 693
Simulating Nanoscale Semiconductor Devices......Page 701
VIII. Novel Devices and Applications......Page 715
Recent Progresses of Application-Oriented MEMS Through Industry-University Collaboration......Page 717
Mixed-Valence Transition Metal Complex Based Integral Architecture for Molecular Computing (I): Attachment of Linker Molecule to Silicon (100)-2x1 Surface......Page 729
Silicon Fibre Technology Development for Wearable and Ambient Electronics Applications......Page 737
Silicon-Based Integrated MOSFETs and MESFETs: A New Paradigm for Low Power Mixed Signal Monolithic Systems Using Commercially Available SOI......Page 747
Design Modeling Testing and Spice Parameter Extraction of DIMOS Transistor in 4H-Silicon Carbide......Page 757
Author Index......Page 771