Transistors

Content: 
Front Matter, Page iii
Copyright, Page iv
Preface, Pages vii-viii
CHAPTER 1 - Semiconductor Physics, Pages 3-34
CHAPTER 2 - Point Contact Devices, Pages 35-48
CHAPTER 3 - Junction Devices and Subsequent Developments, Pages 49-75
Introduction to PART 2, Page 77
PAPER 1 - Modulation of Conductance of Thin Films of Semi-conductors by Surface Charges, Pages 79-81
PAPER 2 - Surface States and Rectification at a Metal–Semi-conductor Contact, Pages 82-105
PAPER 3 - The Transistor, a Semi-conductor Triode, Pages 106-110
PAPER 4 - Nature of the Forward Current in Germanium Point Contacts, Pages 111-114
PAPER 5 - Physical Principles Involved in Transistor Action, Pages 115-163
PAPER 6 - The Double-surface Transistor, Pages 164-167
PAPER 7 - Investigation of Hole Injection in Transistor Action, Pages 168-171
PAPER 8 - Effects of Electrical Forming on the Rectifying Barriers of n- and p-Germanium Transistors, Pages 172-176
PAPER 9 - p-n Junctions in Semiconductors, Pages 177-185
PAPER 10 - p-n Junction Transistors, Pages 186-221
PAPER 11 - Theory of Alpha for p-n-p Diffused Junction Transistors, Pages 222-236
PAPER 12 - A High-frequency Diffused Base Germanium Transistor, Pages 237-251
PAPER 13 - The Surface-Barrier Transistor: PART I. PRINCIPLES OF THE SURFACE-BARRIER TRANSISTOR, Pages 252-263
PAPER 14 - Unipolar and Analog Transistors, Pages 264-270
PAPER 15 - A Unipolar “Field-effect” Transistor, Pages 271-307
PAPER 16 - The TFT—A New Thin-film Transistor, Pages 308-330
Index, Pages 331-332