Simulation of Semiconductor Processes and Devices 1998: SISPAD 98

Front Matter....Pages I-XIV
TCAD at the SRC....Pages 1-2
TCAD in Selete....Pages 3-7
Integration of Lithography and Etch Simulations....Pages 8-11
Integrated Three-Dimensional Topography Simulation and its Application to Dual-Damascene Processing....Pages 12-15
Efficient Algorithms for Three-Dimensional Etching and Deposition Simulation....Pages 16-19
Development of a gas-phase chemistry model for numerical prediction of MOVPE of GaN in industrial scale reactors....Pages 20-21
Modeling of flow and heat transfer in a vertical reactor for the MOCVD of zirconium-based coatings....Pages 22-25
Design Optimization of RF Power MOSFET’s Using Large Signal Analysis Device Simulation of Matching Networks....Pages 26-29
Modeling of Temperature Dependence of a Floating Pad Structure’s RF Properties....Pages 30-33
A comprehensive model of a VLSI spiral inductor derived from the first principles....Pages 34-37
Simulation of SiGe Epitaxial Growth for RF-Bipolar Transistors....Pages 38-41
Extension of Spherical Harmonic Method to RF Transient Regime....Pages 42-45
Multiscale Modeling of the Implantation and Annealing of Silicon Devices....Pages 46-47
Dynamics of Arsenic dose loss at the SiO 2 interface during TED....Pages 48-50
Damage Accumulation by Arsenic Ion Implantation and Its Impact on Transient Enhanced Diffusion of As and B....Pages 51-54
A Simple Continuum Model for Simulation of Boron Interstitial Clusters based on Atomistic Calculations....Pages 55-58
Electromagnetic Simulation for the Modeling of Interconnects....Pages 59-60
Layout-Based 3D Solid Modeling of IC Structures and Interconnects Including Electrical Parameter Extraction....Pages 61-64
Exponential Expansion for Rapid and Accurate Extraction of Interconnect Capacitance....Pages 65-68
Rigorous Capacitance Simulation of DRAM Cells....Pages 69-72
A Hybrid Technique for TCAD Modeling and Optimization....Pages 73-76
A Qualitative Study on Optimized MOSFET Doping Profiles....Pages 77-80
Modeling Process and Transistor Variation for Circuit Performance Analysis....Pages 81-84
Statistical Modeling based on extensive TCAD simulations Proposed methodology for extraction of Fast/Slow models and Statistical models....Pages 85-88
Parallel and Distributed TCAD Simulations using Dynamic Load Balancing....Pages 89-92
Device Simulator Calibration for Quartermicron CMOS Devices....Pages 93-96
Automatic Mesh Refinement for 3D Numerical Simulation of Thermal Diffusion in Silicon....Pages 97-100
A Common Mesh Implementation for Both Static and Moving Boundary Process Simulations....Pages 101-104
A Dopant-Dependent Band Gap Narrowing Model Application for Bipolar Device Simulation....Pages 105-108
Improved Modeling of Bandgap-Narrowing Effects in Silicon p + /n + Junctions....Pages 109-112
Simulation of Electron Mobility in Ultrathin Fully Depleted Single Gate SOI MOSFETs....Pages 113-116
Simplified Simulator for Neutron-Induced Soft Errors Based on Modified BGR Model....Pages 117-120
Quantum effects in the simulation of conventional devices....Pages 121-128
Efficient Quantum Correction Model for Multi-dimensional CMOS Simulations....Pages 129-132
The Role of Quantization Effects in Inversion Hole Layers of Tunnel MOS Structures on n-Si Substrates....Pages 133-136
Multi-dimensional Quantum Effect Simulation Using a Density-Gradient Model and Script-Level Programming Techniques....Pages 137-140
Microsystem CAD: From FEM to System Simulation....Pages 141-148
Methods for model generation and parameter extraction for MEMS....Pages 149-152
A Heterogeneous Environment for Computational Prototyping and Simulation Based Design of MEMS Devices....Pages 153-156
Bias-Dependent Low-Frequency Noise Model for Low Phase Noise InP HEMT based MMIC Oscillator Design....Pages 157-160
3D Modeling of Sputter Process with Monte Carlo Method....Pages 161-164
Effects of scaling and lattice heating on n-MOSFET performance via electrothermal Monte Carlo simulation....Pages 165-168
Efficient Modeling of Spatially Varying Degeneracy in Monte Carlo Particle Simulation of Highly Doped Submicron HEMT....Pages 169-172
Monte Carlo modelling of spin relaxation in a III-V two dimensional electron channel....Pages 173-176
Combining the Scattering Matrix and Spherical Harmonic Methods for Semiconductor Modeling....Pages 177-180
Discretization of the Brillouin Zone by an Octree/Delaunay Method with Application to Full-Band Monte Carlo Transport Simulation....Pages 181-184
A Hybrid Approach for Building 2D and 3D Conforming Delaunay Meshes Suitable for Process and Device Simulation....Pages 185-188
Improving the quality of Delaunay triangulations for the control volume discretization method....Pages 189-192
Three-Dimensional Adaptive Mesh Relaxation....Pages 193-196
Grid Adaptation for Device Simulation According to the Dissipation Rate....Pages 197-200
Single Electron Memory Device Simulations....Pages 201-202
TCAD oriented simulation of single-electron transistors at device level....Pages 203-206
Quantum Electron-Phonon Interaction for Transport in Open Nanostructures....Pages 207-210
Origin of Drain-Current Oscillation on Ultra-Thin-SOI n-MOSFET....Pages 211-214
Scattering Theory of Carrier Transport in Semiconductor Devices....Pages 215-222
Statistically reliable ‘Atomistic’ Simulation of Sub 100 nm MOSFETs....Pages 223-226
On The Modeling Of CV Data For State-Of-The-Art CMOS Technologies: Do We Need To Include Fast Interface States?....Pages 227-230
New Hot-Carrier Degradation Mechanism for MOSFET Devices Using Two-Type Interface-State Model....Pages 231-234
Influence of the Ge concentration on the threshold voltage and subthreshold slope of nanoscale vertical Si/SiGe pMOSFETs....Pages 235-238
Anisotropic Ballistic In—Plane Transport of Electrons in Strained Si....Pages 239-242
Simulation of Be diffusion in the base layer of InGaAs/InP Heterojunction Bipolar Transistors....Pages 243-246
Hydrodynamic Mixed-Mode Simulation....Pages 247-250
Simulation of Dynamic Ionization Effects in 6H-SiC Devices....Pages 251-254
Coupled 3D Process and Device Simulation of Advanced MOSFETs....Pages 255-258
Analysis of the asymmetric breakdown characteristics of trench isolation structure by using TCAD....Pages 259-262
Characterisation of the Corner Effect by composed 2D Device Simulations....Pages 263-266
A Physics Based Resistance Model of the Overlap Regions in LDD-MOSFETs....Pages 267-270
A Physically-Based Compact Model for LDMOS Transistors....Pages 271-274
Simulation of Carrier Transport and Hot Phonon Effects in Quantum Well Laser Diodes....Pages 275-275
Numerical Simulation of Infrared Laser Probing Techniques....Pages 276-279
Quasi 3—D Simulation of Quantum Well DFB Lasers....Pages 280-283
Simulation of AVC Measurements....Pages 284-287
Statistical Circuit Modeling....Pages 288-295
A new compact model for the analysis of the anomalies in I-V characteristics of Schottky diodes....Pages 296-299
Investigation of Non-Punch-Through IGBTs with different trench designs....Pages 300-303
Elimination of Non-Simultaneous Triggering Effects in Finger-type ESD Protection Transistors Using Heterojunction Buried Layer....Pages 304-307
Influence of the S/D architecture on the V T of deep submicron MOSFETs....Pages 308-311
A Physically-Based Electron Mobility Model for Silicon Device Simulation....Pages 312-315
Modeling Hole Surface- and Bulk-Mobility in the Frame of a Spherical-Harmonics Solution of the BTE....Pages 316-319
Hydrodynamic model for hot carriers in silicon based on the maximum entropy formalism....Pages 320-323
Minimizing Bitline Coupling Noise in DRAM with Capacitor-Equiplanar-to-Bitline (CEB) Cell Structure....Pages 324-327
The Modeling of Electromigration A New Challenge for TCAD?....Pages 328-331
Correlation of Finite Element Stress Simulations with Electromigration-Induced Fractures in Tungsten Plug Structures....Pages 332-335
Accurate Layout-Based Interconnect Analysis....Pages 336-339
Continuous Field Analysis of Distributed Parasitic Effects Caused by Interconnects in High Power Semiconductor Modules....Pages 340-343
Molecular Dynamics Analysis of Grain-Boundary Grooving in Thin-Film Interconnects for ULSIs....Pages 344-347
Industrial Demands on Process and Device Simulation....Pages 348-355
Point defect parameter extraction through their reaction with dislocation loops....Pages 356-359
Recombination of Point Defects via Extended Defects and Its Influence on Dopant Diffusion....Pages 360-363
A Systematic and Physically Based Method of Extracting a Unified Parameter Set for a Point-Defect Diffusion Model....Pages 364-367
Two-Dimensional Simulation of Ferroelectric Nonvolatile Memory Cells....Pages 368-371
Influence of the Poly Gate Depletion Effect on Programming EEPROM Cells....Pages 372-375
Simulation based development of EEPROM devices within a 0.35 µ m process....Pages 376-379
Modeling the trapping and de-trapping of phosphorus at the Si to SiO 2 interface....Pages 380-383
Derived Boundary Conditions for Viscous Thermal Oxidation Equations in Pressure Potential Form....Pages 384-387
Modeling and Simulation of Oxygen Precipitation in CZ Silicon....Pages 388-391
Predictive Soft Error Rate Evaluation System....Pages 392-395
Modeling of Particle-Irradiated Devices....Pages 396-399
3D-Simulation of an Enhanced Field-Funneling Effect on the Collection of Alpha-Particle-Generated Carriers in P − on P + Epitaxial Substrates....Pages 400-403
Back Matter....Pages 404-410