Simulation of Semiconductor Processes and Devices 2004

Front Matter....Pages i-xii
Advanced Transport Models for Sub-Micrometer Devices....Pages 1-8
NEMO 1-D: the first NEGF-based TCAD tool....Pages 9-12
The Density-Gradient Correction as a Disguised Pilot Wave of de Broglie....Pages 13-16
Full Band and Approximated Solutions of the Schrödinger Equation in Silicon Inversion layers....Pages 17-20
A Hybrid 3D Quantum Mechanical Simulation of FinFETs and Nanowire Devices....Pages 21-24
On the Calculation of Quasi-Bound States and Their Impact on Direct Tunneling in CMOS Devices....Pages 25-28
Quantum Mechanical Simulation in DG MOSFETs Based on a Tight Binding Green’s Function Formalism....Pages 29-32
Modeling B Uphill Diffusion in the Presence of Ge....Pages 33-36
 Ab-initio Calculations to Predict Stress Effects on Boron Solubility in Silicon....Pages 37-40
Boron Diffusion in Strained and Strain-Relaxed SiGe....Pages 41-44
Modeling dopant diffusion in SiGe and SiGeC layers....Pages 45-48
Continuum Modeling of Indium to Predict SSR Profiles....Pages 49-52
Theoretical Analysis of Stress and Surface Orientation Effects on Inversion Carrier Mobility....Pages 53-56
CMOS Circuit Performance Enhancement by Surface Orientation Optimization....Pages 57-60
Modeling of Stress Induced Layout Effect on Electrical Characteristics of Advanced MOSFETs....Pages 61-64
Hole Mobility Enhancement Modeling and Scaling Study for High Performance Strained Ge Buried Channel PMOSFETs....Pages 65-68
Three-Dimensional Characterization and Modeling of Stress Distribution in High-Density DRAM Memory Cells....Pages 69-72
Strain Optimization to Reduce Gate Leakage Current in MOS Transistors with Silicon Oxynitride Gate Dielectrics by Use of First-Principles Calculations....Pages 73-76
Simulation Study of Simple CMOS-Compatible Thin-SOI Vertical Bipolar Transistors on Thin BOX with an Inversion Collector....Pages 77-80
Current collapse associated with surface states in GaN-based HEMT’s. Theoretical/experimental investigations....Pages 81-84
Implications of Gate Misalignment for Ultra-narrow Multi-gate Devices....Pages 85-88
Source-Side Injection Modeling by Means of the Spherical-Harmonics Expansion of the BTE ....Pages 89-92
Investigation of a novel tunneling transistor by MEDICI simulation....Pages 93-96
Optimization of BAW resonator performance using combined simulation techniques....Pages 97-100
Simulation of GaN-based Light-Emitting Devices....Pages 101-108
On the Validity of the Relaxation Time Approximation for Macroscopic Transport Models....Pages 109-112
A Local Mobility Model for Ultra-Thin DGSOI nMOSFETs....Pages 113-116
On the Relationship Between Carrier Mobility and Velocity in Sub-50 nm MOSFETs via Calibrated Monte Carlo Simulation....Pages 117-120
A Method for Determining the Screening Length of the Coulombic Scattering in Non-Degenerate and Degenerate Semiconductors....Pages 121-124
3D Simulation of Process Effects Limiting FinFET Performance and Scalability....Pages 125-128
Full Three-Dimensional Analysis of a Non-Volatile Memory Cell....Pages 129-132
Three-Dimensional Simulation of Orientation-Dependent Wet Chemical Etching....Pages 133-136
Modeling CVD effects in Atomic Layer Deposition on the Feature Scale....Pages 137-140
Defect and Carrier Dynamics in Nanotubes under Electronic Excitations: Time-Dependent Density Functional Approaches....Pages 141-148
Three-Dimensional Analysis of Schottky Barrier Carbon Nanotube Field Effect Transistors....Pages 149-152
Numerical Performance Analysis of Carbon Nanotube (CNT) Embedded MOSFETs....Pages 153-156
Parameter Extraction and Validation of an Electronic and Optical Model for Organic Light-emitting Devices....Pages 157-160
Adaptive Surface Triangulations for 3D Process Simulation....Pages 161-164
Anisotropic Laplace Refinement for Three-Dimensional Oxidation Simulation....Pages 165-168
Monte Carlo Simulation of Ion Implantation in Silicon-Germanium Alloys....Pages 169-172
Comprehensive Understanding of Carrier Mobility in MOSFETs with Oxynitrides and Ultrathin Gate Oxides....Pages 173-180
Physics and Modeling of Radiation Effects in Advanced CMOS Technology Nodes....Pages 181-190
Very High Performance, Sub-20nm, Strained Si and Si x Ge 1-x , Hetero-structure, Center Channel (CC) NMOS and PMOS DGFETs....Pages 191-194
Scalability of FinFETs and Unstrained-Si/Strained-Si FDSOI-MOSFETs....Pages 195-198
Device performance in conventional and strained Si n -MOSFETs with high-κ gate stacks....Pages 199-202
Understanding the role of strain in Si-Ge devices....Pages 203-206
Electro-thermal Simulations of Strained-Si MOSFETs under ESD conditions....Pages 207-210
Simulation of the Cross-Coupling among Snap Back Devices under Transient High Current Stress....Pages 211-214
Simulation of the failure mechanism of power DMOS transistors under avalanche stress....Pages 215-218
An Accurate and Comprehensive Soft Error Simulator NISES II....Pages 219-222
Impact of Scattering on Random Dopant Induced Current Fluctuations in Decanano MOSFETs....Pages 223-226
Analysis of Random Doping and Oxide Thickness Induced Fluctuations in Nanoscale Semiconductor Devices through Poisson-Schrödinger Computations....Pages 227-230
Stable simulation of impurity fluctuation for contact resistance and Schottky diodes....Pages 231-234
Impact of the Floating Body Effect on Noise in SOI Devices Investigated by Hydrodynamic Simulation....Pages 235-238
Examination of Spatial Frequency Dependence of Line Edge Roughness on MOS Device Characteristics....Pages 239-242
Simulation of Lithography-caused Gate Length and Interconnect Linewidth Variational Impact on Circuit Performance in Nanoscale Semiconductor Manufacturing....Pages 243-246
Optimization of Recessed and Elevated Silicide Source/Drain Contact Structure Using Physical Compact Resistance Modeling and Simulation in Ultra-Thin Body SOI MOSFETs....Pages 247-250
A New Backscattering Model for Nano-MOSFET Compact Modeling....Pages 251-254
Fully-Depleted SOI-MOSFET Model for Circuit Simulation and its Application to 1/ f Noise Analysis....Pages 255-258
Modeling of Carrier Transport Dynamics at GHz-Frequencies for RF Circuit-Simulation....Pages 259-262
SPICE-Compatible Macro Model for Split-Gate Compact NVM Cell with Various Gap Sizes....Pages 263-266
SET Accurate Compact Model for SET-MOSFET Hybrid Circuit Simulation....Pages 267-270
2D Quantum Mechanical (QM) Charge Model and Its Application to Ballistic Transport of Sub-50nm Bulk Silicon MOSFETs....Pages 271-274
Effective Bohm Quantum Potential for device simulators based on drift-diffusion and energy transport....Pages 275-278
Single Ion and Multi Ion MOSFETs Simulation with Density Gradient Model....Pages 279-282
Modeling and Simulation of Combined Thermionic Emission-Tunneling Current through Interfacial Isolation Layer....Pages 283-286
Experiments on Minority Carrier Diffusion in Silicon: Contributions of Excitons....Pages 287-290
Accurate Temperature Drift model of MOSFETs Mobility for Analog Circuits....Pages 291-294
Accurate Modeling of Lattice Site-Dependent Ionization Level of Impurities in α-SiC Devices....Pages 295-298
Strain Scaling for Ultra Thin Silicon NMOS Devices....Pages 299-302
CMOS Scaling Analysis based on ITRS Roadmap by Three-dimensional Mixed-mode Device Simulation....Pages 303-306
Comparison of Nanoscale Metal-Oxide-Semiconductor Field Effect Transistors....Pages 307-310
Numerical analysis for the structure dependence on the subthreshold slope of Floating Channel type SGT(FC-SGT) Flash memory....Pages 311-314
A Monte-Carlo Method for Distribution of Standby Currents and its Application to DRAM Retention Time....Pages 315-318
Optimal Contact Placement in Partially Depleted SOI with Application to Raised Source-Drain Structures....Pages 319-322
Simulation of Microstructure Formation during Thin Film Deposition....Pages 323-326
Effect of Stress on Pattern-Dependent Oxidation of Silicon Nanostructures....Pages 327-330
The Evolution of the Resistance and Current Density During Electromigration....Pages 331-334
3-D Physically-Based Electromigration Simulation in Copper - Low-K Interconnect....Pages 335-338
3D Feature-Scale Simulation of Sputter Etching with Coupling to Equipment Simulation....Pages 339-342
Automatic Optimization Algorithm for a Direct 2D and 3D Mesh Generation from the Layout Information....Pages 343-346
Genetic Algorithm for Optimization and Calibration in Process Simulation....Pages 347-350
Performance Evaluation of Linear Solvers Employed for Semiconductor Device Simulation....Pages 351-354
An Analysis of the Effect of Surrounding Gate Structure on Soft Error Immuniy....Pages 355-358
Analytical Modeling of Ge and Si Double-Gate(DG) NFETs and the Effect of Process Induced Variations (PIV) on Device Performance....Pages 359-362
Proposal of a physics-based compact model for nanoscale MOSFETs including the transition from drift-diffusion to ballistic transport....Pages 363-366
A New Methodology for Efficient and Reliable Large- Signal Analysis of RF Power Devices....Pages 367-370
Small-Signal Modeling of RF CMOS....Pages 371-374