Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1

Content: 
Chapter 1 Bulk Growth of SiC – Review on Advances of SiC Vapor Growth for Improved Doping and Systematic Study on Dislocation Evolution (pages 1–31): Sakwe Aloysius Sakwe, Mathias Stockmeier, Philip Hens, Ralf Muller, Desiree Queren, Ulrike Kunecke, Katja Konias, Rainer Hock, Andreas Magerl, Michel Pons, Albrecht Winnacker and Peter Wellmann
Chapter 2 Bulk and Epitaxial Growth of Micropipe?Free Silicon Carbide on Basal and Rhombohedral Plane Seeds (pages 33–61): Boris M. Epelbaum, Octavian Filip and Albrecht Winnacker
Chapter 3 Formation of Extended Defects in 4H?SiC Epitaxial Growth and Development of a Fast Growth Technique (pages 63–94): Hidekazu Tsuchida, Masahiko Ito, Isaho Kamata and Masahiro Nagano
Chapter 4 Fabrication of High Performance 3C?SiC Vertical MOSFETs by Reducing Planar Defects (pages 95–113): Hiroyuki Nagasawa, Masayuki Abe, Kuniaki Yagi, Takamitsu Kawahara and Naoki Hatta
Chapter 5 Identification of Intrinsic Defects in SiC: Towards an Understanding of Defect Aggregates by Combining Theoretical and Experimental Approaches (pages 115–145): Michel Bockstedte, Adam Gali, Alexander Mattausch, Oleg Pankratov and John W. Steeds
Chapter 6 EPR Identification of Intrinsic Defects in SiC (pages 147–179): J. Isoya, T. Umeda, N. Mizuochi, N. T. Son, E. Janzen and T. Ohshima
Chapter 7 Electrical and Topographical Characterization of Aluminum Implanted Layers in 4H Silicon Carbide (pages 181–204): Martin Rambach, Anton J. Bauer and Heiner Ryssel
Chapter 8 Optical Properties of As?Grown and Process?Induced Stacking Faults in 4H?SiC (pages 205–242): Jean Camassel and Sandrine Juillaguet
Chapter 9 Characterization of Defects in Silicon Carbide by Raman Spectroscopy (pages 243–266): Martin Hundhausen, Roland Pusche, Jonas Rohrl and Prof. Dr. Lothar Ley
Chapter 10 Lifetime?Killing Defects in 4H?SiC Epilayers and Lifetime Control by Low?Energy Electron Irradiation (pages 267–286): Prof. Dr. Tsunenobu Kimoto, Katsunori Danno and Jun Suda
Chapter 11 Identification and Carrier Dynamics of the Dominant Lifetime Limiting Defect in n? 4H?SiC Epitaxial Layers (pages 287–317): Paul B. Klein
Chapter 12 Optical Beam Induced Current Measurements: Principles and Applications to SiC Device Characterization (pages 319–340): Christophe Raynaud, Duy?Minh Nguyen, Nicolas Dheilly, Dominique Tournier, Pierre Brosselard, Mihai Lazar and Dominique Planson
Chapter 13 Measurements of Impact Ionization Coefficients of Electrons and Holes in 4H?SiC and their Application to Device Simulation (pages 341–362): Tetsuo Hatakeyama
Chapter 14 Analysis of Interface Trap Parameters from Double?Peak Conductance Spectra Taken on N?Implanted 3C?SiC MOS Capacitors (pages 363–374): M. Krieger, S. Beljakowa, L. Trapaidze, T. Frank, H. B. Weber, Dr. G. Pensl, N. Hatta, M. Abe, H. Nagasawa and A. Schoner
Chapter 15 Non?Basal Plane SiC Surfaces: Anisotropic Structures and Low?Dimensional Electron Systems (pages 375–394): Ulrich Starke
Chapter 16 Comparative Columnar Porous Etching Studies on n?Type 6H SiC Crystalline Faces (pages 395–409): Y. Ke, R. P. Devaty and W. J. Choyke
Chapter 17 Micro? and Nanomechanical Structures for Silicon Carbide MEMS and NEMS (pages 411–451): Christian A. Zorman and Rocco J. Parro
Chapter 18 Epitaxial Graphene: A New Material (pages 453–472): Th. Seyller, A. Bostwick, K. V. Emtsev, K. Horn, Prof. Dr. L. Ley, J. L. McChesney, T. Ohta, J. D. Riley, E. Rotenberg and F. Speck
Chapter 19 Density Functional Study of Graphene Overlayers on SiC (pages 473–492): Oleg Pankratov and Alexander Mattausch