Semiconductor Materials for Optoelectronics and LTMBE Materials, PROCEEDINGS OF SYMPOSIUM A ON SEMICONDUCTOR MATERIALS FOR OPTOELECTRONIC DEVICES, OEICS AND PHOTONICS AND SYMPOSIUM B ON LOW TEMPERATURE MOLECULAR BEAM EPITAXIAL III–V MATERIALS: PHYSICS AND APPLICATIONS OF THE 1993 E-MRS SPRING CONFERENCE

Content: 
European Materials Research Society Symposia Proceedings
Page ii

Front Matter
Page iii

Copyright page
Page iv

Preface
Page xi
J.P. Hirtz, H. Meier, C. Whitehouse

Organizers and Sponsors
Page xii

Preface
Page i
H.J. von Bardeleben, J.P. Hirtz, M.O. Manasreh

Organizers and Sponsors
Page ii

Stoichiometry of III–V compounds
Pages 107-119
Jun-ichi Nishizawa

Evaluation of III–V growth technologies for optoelectronic applications
Pages 120-129
Harald Heinecke, Eberhard Veuhoff

Selective and non-planar epitaxy of InP/GaInAs(P) by MOCVD
Pages 130-146
E.J. Thrush, J.P. Stagg, M.A. Gibbon, R.E. Mallard, B. Hamilton, J.M. Jowett, E.M. Allen

Esprit Morse: research for novel metal–organic precursors
Pages 147-152
F. Scholz

MBE regrowth of GaAs/AlGaAs structures on RIE patterned substrates
Pages 153-156
T. Röhr, M. Walther, S. Rochus, G. Böhm, W. Klein, G. Tränkle, G. Weimann

Improved method for GaAs-(Ga, Al) As epitaxial regrowth
Pages 157-160
E. Bedel, A. Munoz-Yague, C. Fontaine, C. Vieu

Investigation of MOVPE-grown In0.53Ga0.47As/InP multi-quantum wells by Raman spectroscopy and X-ray diffractometry
Pages 161-164
J. Finders, M. Keuter, D. Gnoth, J. Geurts, J. Woitok, A. Kohl, R. MГјller, K. Heime

Chemical beam epitaxy of high purity InP using tertiarybutylphosphine and 1,2 bis-phosphinoethane
Pages 165-168
M. Zahzouh, G. Hincelin, R. Mellet, A.M. Pougnet

Optical characterization of extremely high purity ZnSe grown by metal–organic vapour phase epitaxy using dimethylzinc-triethylamine adduct
Pages 169-173
T. Cloitre, N. Briot, O. Briot, B. Gil, R.L. Aulombard, A.C. Jones

Spectroscopic ellipsometry: a useful tool to determine the refractive indices and interfaces of In0.52Al0.48As and In0.53AlxGa0.47 – xAs layers on InP in the wavelength range 280–1900 nm
Pages 174-176
H.W. Dinges, H. Burkhard, R. Lösch, H. Nickel, W. Schlapp

Room temperature photoreflectance as a powerful tool to characterize the crystalline quality of InAlAs layers grown on InP substrates
Pages 177-180
S. MonГ©ger, A. Tabata, C. Bru, G. Guillot, A. Georgakilas, K. Zekentes, G. Halkias

Effects of deep levels and Si-doping on GaInP material properties investigated by means of optical methods
Pages 181-184
Q. Liu, U. Quedeweit, F. Scheffer, A. Lindner, W. Prost, F.J. Tegude

Optical properties of GaSb–AlSb heterostructures grown by molecular beam epitaxy
Pages 185-188
B. Lambert, Y. Toudic, Y. Rouillard, M. Baudet, B. Guenais, B. Deveaud, I. Valiente, J.C. Simon

Absorption coefficient and exciton oscillator strengths in InGaAs/InP multi-quantum wells
Pages 189-193
C. Arena, L. Tarricone, F. Genova, C. Rigo

MBE growth and properties of high quality Al(Ga)InAs/GaInAs MQW structures
Pages 194-197
H. Künzel, J. Böttcher, A. Hase, C. Schramm

Influence of the cap layer thickness on the optical properties of near surface GaInAs/GaAs quantum wells
Pages 198-200
J. Dreybrodt, F. Faller, A. Forchel, J.P. Reithmaier

Intersubband transitions in InAs/AlSb quantum wells
Pages 201-204
A. Simon, J. Scriba, C. Gauer, A. Wixforth, J.P. Kotthaus, C.R. Bolognesi, C. Nguyen, G. Tuttle, H. Kroemer

Blue diode lasers and visible optoelectronic devices
Pages 205-210
B.C. Cavenett, K.A. Prior, S.Y. Wang

Aluminium-free 980 nm laser diodes
Pages 211-216
M. Pessa, J. Näppi, G. Zhang, A. Ovtchinnikov, H. Asonen

Shadow mask MBE for the fabrication of lead chalcogenide buried heterostructure lasers
Pages 217-223
A. Lambrecht, R. Kurbel, M. Agne

Quantum confined Stark effect (QCSE) and self-electro-optic effect device (SEED) in II-VI heterostructures
Pages 224-227
H. Haas, P. Gentile, N. Magnea, J.L. Pautrat, Le Si Dang, N.T. Pelekanos

Growth of InAlGaAs multilayer structures for high power and submilliamp vertical cavity lasers
Pages 228-231
K. Panzlaff, T. Hackbarth, E. Zeeb, T. Wipiejewski, K.J. Ebeling

p-Dopant incorporation and influence on gain and damping behaviour in high-speed GaAs-based strained MQW lasers
Pages 232-236
J.D. Ralston, S. Weisser, I. Esquivias, A. Schönfelder, E.C. Larkins, J. Rosenzweig, P.J. Tasker, M. Maier, J. Fleissner

Experimental and theoretical studies of multi-quantum well structures for unipolar avalanche multiplication
Pages 237-240
Mika Toivonen, Marko Jalonen, Markus Pessa, Kevin R. Lefebvre, Neal G. Anderson

Lateral thickness modulations in alternate tensile–compressive strained GaInAsP multilayers grown by gas source molecular beam epitaxy
Pages 241-243
A. Ponchet, A. Rocher, J.Y. Emery, C. Starck, L. Goldstein

Growth and characterization of In0.53Ga0.47As/InxGa1–xAs strained-layer superlattices
Pages 244-248
A. Kohl, S. Juillaguet, B. Fraisse, R. Schwedler, F. Royo, H. Peyre, F. Bruggeman, K. Wolter, K. Leo, H. Kurz, J. Camassel

Metal–organic vapour-phase epitaxial growth of symmetrically strained (GaIn)As/Ga(PAs) superlattices
Pages 249-252
S. Lutgen, T. Marschner, T.F. Albrecht, W. Stolz, E.O. Göbel, L. Tapfer

Strain effects on carrier lifetimes in InGaAs/(Al)GaAs multiple quantum wells
Pages 253-256
M.H. Moloney, J. Hegarty, L. Buydens, P. Demeester, R. Grey, J. Woodhead

Determination of residual strain by reflectivity, X-ray diffraction and Raman spectroscopy in ZnSe epilayers grown on GaAs(001), InP(001) and GaSb(001) by metal–organic vapor phase epitaxy
Pages 257-261
M. Stoehr, M. Maurin, F. Hamdani, J.P. Lascaray, D. Barbusse, B. Fraisse, R. Fourcade, P. Abraham, Y. Monteil

Characterization of heterointerfaces and surfaces in InSb on GaAs and in InAs/AlSb quantum wells
Pages 262-265
J. Wagner, J. Schmitz, A.-L. Alvarez, P. Koidl, J.D. Ralston

Improvements in the heteroepitaxial growth of GaAs on Si by MOVPE
Pages 266-269
T. Marschner, W. Stolz, E.O. Göbel, F. Phillipp, M. Müller, J. Lorberth

Characterization of the heterostructure between heteroepitaxially grown ОІ-FeSi2 and (111) silicon
Pages 270-273
M. Pauli, M. Dücker, M. Döscher, J. Müller, W. Henrion, H. Lange

Optical investigation of interdiffusion in CdTe/CdMnTe quantum wells
Pages 274-276
D. Tönnies, G. Bacher, A. Forchel, A. Waag, G. Landwehr

Investigation of InGaAs/InP interdiffusion by simultaneous transmission electron microscopy and photoluminescence analysis
Pages 277-280
J. Oshinowo, A. Forchel, J.D. GaniГЁre, P. Ruterana, P.A. Stadelmann, I. Gyuro, G. Laube, E. Zielinski

Vacancy controlled interdiffusion in III–V heterostructures
Pages 281-283
W.P. Gillin, I.V. Bradley, S.S. Rao, K.P. Homewood, B.J. Sealy, L.K. Howard, A.D. Smith, A.T.R. Briggs

Simulation of lateral Al recoil atoms and damage defects gradients in a GaAs/GaAlAs quantum well created by masked ion implantation
Pages 284-287
M.M. Faye, C. Vieu, L. LaГўnab, J. Beauvillain, A. Claverie

Strained InAs/AlxGa0.48–xIn0.52As heterostructures: a tunable quantum well materials system for light emission from the near-IR to the mid-IR
Pages 288-292
Eric TourniГ©, Klaus H. Ploog, Patrick Grunberg, Shata Kadret, AndrГ© JoulliГ©, Franz Daiminger, L. Butov, Alfred Forchel

Chemical beam epitaxy and photoluminescence characteristics of InGaAsP/InP BRAQWET modulators
Pages 293-295
J.F. Carlin, B. Dwir, M. Glick, R. Monnard, A. Rudra, M.A. Dupertuis, F.K. Reinhart

Second harmonic generation via excitations between valence sub-bands in p-type GaAs–AlAs and Si–SiGe quantum well structures
Pages 296-299
K.B. Wong, M.J. Shaw, M. Jaros

An AlGaAs/GaAs OEIC structure for the integration of LEDs, MESFETs and photodetectors
Pages 300-303
D. Leipold, U. Kehrli, B. Delley, K. Thelen, B.D. Patterson

AlGaInP/GaInAs/GaAs MODFET devices: candidates for optoelectronic integrated circuits
Pages 304-306
W. Pletschen, K.H. Bachem, P.J. Tasker, K. Winkler

Photoluminescence and electroluminescence processes in Si1–xGex/Si heterostructures grown by chemical vapor deposition
Pages 307-311
J.C. Sturm, X. Xiao, Q. Mi, C.W. Liu, A.St. Amour, Z. Matutinovic-Krstelj, L.C. Lenchyshyn, M.L.W. Thewalt

Tunable infrared photoemission sensor on Si using epitaxial ErSi2/Si heterostructures
Pages 312-316
I. Sagnes, Y. Campidelli, G. Vincent, P.A. Badoz

A study of PbSe heteroepitaxy on Si(111) for IR optoelectronic applications
Pages 317-320
F. Nguyen-Van-Dau, V. Mathet, P. Galtier, G. Padeletti, J. Olivier, D.G. CrГ©tГ©, P. Collot

Optical cross-sections and distribution of Fe2+ and Fe3+ in semi-insulating liquid encapsulated Czochralski grown InP:Fe
Pages 321-324
A. Seidl, F. Mosel, J. Friedrich, U. Kretzer, G. MГјller

Large negative persistent photoconductivity of bulk GaAs1–xPx (x = 0.02–0.03) single crystals
Pages 325-328
T. SЕ‚upiЕ„ski, G. Nowak, R. BoЕјek, A. WysmoЕ‚ek, M. Baj

Synthetic diamond: the optical band at 1.883 eV
Pages 329-332
M.H. NazarГ©, L.M. Rino

Optical and transport properties in the electro-optical material CdIn2Te4
Pages 333-337
G. Couturier, B. Jean, J.F. Lambert, P. Joffre

Basic principles governing the surface atomic structure of zinc blende semiconductors
Pages 1-8
M. Lannoo

LTMBE GaAs: present status and perspectives
Pages 9-15
Gerald L. Witt

Point defects in III–V materials grown by molecular beam epitaxy at low temperature
Pages 16-22
P. Hautojärvi, J. Mäkinen, S. Palko, K. Saarinen, C. Corbel, L. Liszkay

Gallium vacancy related defects in silicon doped GaAs grown at low temperatures
Pages 23-26
S.A. McQuaid, R.E. Pritchard, R.C. Newman, S. O\'Hagan, M. Missous

EL2-like defects in low temperature GaAs
Pages 27-30
G. Kowalski, A. Kurpiewski, M. KamiЕ„ska, E.R. Weber

GaAs, AlGaAs, and InGaAs epilayers containing As clusters: semimetal/semiconductor composites
Pages 31-36
M.R. Melloch, J.M. Woodall, N. Otsuka, K. Mahalingam, C.L. Chang, D.D. Nolte

Semi-insulating GaAs made by As implantation and thermal annealing
Pages 37-40
A. Claverie, F. Namavar, Z. Liliental-Weber, P. Dreszer, E.R. Weber

Electro-optical measurement of low temperature GaAs
Pages 41-44
K.P. Korona, M. KamiЕ„ska, J.M. Baranowski, E.R. Weber

Extended defects and precipitates in LT-GaAs, LT-InAlAs and LT-InP
Pages 45-54
Alain Claverie, Zuzanna Liliental-Weber

Interfacial barrier characteristics of LT-GaAs on low doped GaAs layers
Pages 55-60
K.M. Lipka, B. Splingart, X. Zhang, M. Poese, K. Panzlaff, E. Kohn

Optoelectronic applications of LTMBE III-V materials
Pages 61-67
John F. Whitaker

Subpicosecond electric field dynamics in low-temperature-grown GaAs observed by reflective electro-optic sampling
Pages 68-71
T. Dekorsy, X.Q. Zhou, K. Ploog, H. Kurz

Applications of GaAs grown at a low temperature by molecular beam epitaxy
Pages 72-77
Umesh K. Mishra

Temperature measurements of LT GaAs diodes
Pages 78-81
R. Westphalen, B. Boudart, D. ThГ©ron, X. Wallart, Y. Druelle, Y. Crosnier

Noise studies of HFETs on low temperature grown GaAs buffers and of MESFETs with low temperature grown GaAs passivation
Pages 82-85
A.D. van Rheenen, Y. Lin, S. Tehrani, C.-L. Chen, F.W. Smith

Electrical conduction in low temperature grown InP
Pages 86-88
K. Khirouni, H. Maaref, J.C. Bourgoin, J.C. Garcia

Low temperature molecular beam epitaxy of Al(Ga)InAs on InP and its application to high electron mobility transistor structures
Pages 89-92
H. Künzel, J. Böttcher, A. Hase, C. Heedt, H. Hoenow

Photo-induced current transient spectroscopy of Al0.48In0.52As semi-insulating layers grown on InP by molecular beam epitaxy
Pages 93-96
A. Kalboussi, G. Marrakchi, A. Tabata, G. Guillot, G. Halkias, K. Zekentes, A. Georgakilas, A. Cristou

Low temperature chemical beam epitaxy of gallium phosphide/silicon heterostructures
Pages 97-102
J.T. Kelliher, J. Thornton, N. Dietz, G. Lucovsky, K.J. Bachmann

Author Index of Volume 21, Issues 2–3
Pages 338-339

Subject Index of Volume 21, Issues 2–3
Pages 340-345

Author Index of Volume 22, Number 1
Page 103

Subject Index of Volume 22, Number 1
Pages 104-106