Physical properties of materials for engineers. Volume 3

Content: Cover
 Title Page
 Copyright Page
 PREFACE
 Half Title
 Table of Contents
 Chapter 10: Physical Factors in Phase Formation
 10.1. Interstitial Solid Solutions
 10.1.1. Hägg's Rules for Interstitial Solid Solutions
 10.2. Substitutional Solid Solutions
 10.2.1. Size Factors
 10.2.1.1. Goldschmidt Radii
 10.2.1.2. Space Concept
 10.2.1.3. Symmetry Concept
 10.2.2. Electronegativity
 10.2.3. Relative Valence Effect
 10.2.3.1. Electron:Atomic Ratio
 10.2.4. Lattice Type
 10.3. Solvus Curves
 10.4. Solidus Curves
 10.5. Liquidus Curves
 10.6. Intermediate Phases 10.6.1. Bonding Energy of Ionic Crystals10.6.2. Compressibility of Ionic Crystals
 10.6.3. Ionic Solids in General
 10.6.4. Ionic Lattice Types
 10.6.5. Laves Phases
 10.6.6. Electron Phases
 10.6.6.1. Alpha Phases
 10.6.6.2. Beta Phases
 10.6.6.3. Gamma Phases
 10.6.7. Covalently Bonded Phases
 10.6.8. Mixed Bonding
 10.6.9. Defect Structures
 10.7. Engle-Brewer Relationships
 10.7.1. Nontransition Elements
 10.7.2. Binary Alloy Systems
 10.7.3. Transition Elements
 10.7.4. Magnetic Effects
 10.7.5. Allotrophy
 10.7.6. Noble Metals
 10.7.7. Multicomponent Constitution Diagrams 10.7.8. Other Unresolved Questions10.8. Other Methods of Phase Determination
 10.8.1. The Miedema Method
 10.9. Problems
 10.10. References
 Chapter 11: Semiconductor
 11.1. Intrinsic Semiconductors
 11.1.1. Intrinsic Conduction Mechanism
 11.1.2. Electron Behavior and Effective Mass
 11.1.3. The Hall Effect
 11.2. Roles of Impurities (Extrinsic Semiconductors)
 11.2.1. Generation, Recombination, and Trapping of Carriers
 11.2.1.1. Surface Effects
 11.3. Photoconduction
 11.4. Metal-Metal Rectification
 11.5. Metal-Semiconductor Rectification
 11.6. P-N Junction Rectification 11.6.1. Breakdown11.7. Semiconductor Materials
 11.8. Bulk Semiconductor Devices
 11.8.1. Photoconductors
 11.8.2. Spontaneous and Stimulated Electromagnetic Emission
 11.8.2.1. Photoluminescence (Phosphorescence)
 11.8.2.2. Stimulated Emission
 11.8.3. Mechanical Devices
 11.8.4. Temperature Measurement and Resistance Change
 11.8.5. Resistors
 11.8.6. Thermoelectric Devices
 11.8.7. Hall-Effect Devices
 11.9. Semiconductor Diode Devices
 11.9.1. Semiconductor Diode Rectifiers
 11.9.2. Avalanche and Tunnel Diodes
 11.9.3. Photodetecting Junction Devices
 11.9.4. Light-Emitting Diodes 11.9.5. Semiconductor Diode Lasers11.9.6. Parametric Diodes
 11.9.6.1. Varactors
 11.9.6.2. P-I-N Junctions
 11.9.6.3. Schottky Diodes
 11.9.6.4. IMPATT Diodes
 11.10. Transistors
 11.10.1. Bipolar Junction Devices
 11.10.2. Junction Field-Effect Transistors
 11.10.3. Metal-Oxide-Silicon FET (MOSFET)
 11.11. Problems
 11.12. References
 Chapter 12: Dielectric Properties
 12.1. Capacitors-Static Fields
 12.2. Polarization of Atoms and Molecules
 12.3. Orientation Polarizability
 12.4. The Lorentz Internal Field and the Debye Function
 12.5. The Clausius-Mossotti and Onsager Equations