Nanoscale Redox Reaction at Metal/Oxide Interface: A Case Study on Schottky Contact and ReRAM

Preface
Acknowledgments
Contents
1 General Introduction
	References
2 Changes in Schottky Barrier Height Behavior of Pt–Ru Alloy Contacts on Single-Crystal ZnO
	2.1 Introduction
	2.2 Interface Formation and Characterization
		2.2.1 Schottky Barrier Height
		2.2.2 Gibbs Free Energy: Ellingham Diagram
		2.2.3 Phase Diagram
		2.2.4 Characterization: Electrical Measurements
		2.2.5 Characterization: X-Ray Photoelectron Spectroscopy
	2.3 Combinatorial Synthesis of Binary Alloy Metal Contacts on Polar Face of ZnO
		2.3.1 Crystal Structural Analysis
		2.3.2 Surface Morphology
		2.3.3 Electrical Properties
		2.3.4 Chemical Bonding States (HX-PES Measurements)
		2.3.5 Surface Termination Effect
	2.4 Summary
	References
3 Surface Passivation Effect on Schottky Contact Formation of Oxide Semiconductors
	3.1 Introduction
	3.2 Near-Atmospheric-Pressure Nitrogen Plasma Treatment
		3.2.1 Atmospheric-Pressure Nitrogen Plasma Source
		3.2.2 Nitridation of Oxide Surface
	3.3 Near-Atmospheric-Pressure Nitrogen Plasma Passivation
		3.3.1 Nitridation of ZnO Surface
		3.3.2 Improvement of Metal/ZnO Interface
	References
4 Bias-Induced Interfacial Redox Reaction in Oxide-Based Resistive Random-Access Memory Structure
	4.1 Introduction
	4.2 Nanoionic-Type ReRAM Structure
		4.2.1 Sample Structure
		4.2.2 Electrical Properties of Cu/HfO2/Pt Structure
	4.3 HX-PES Measurements Under Bias Application
		4.3.1 Cu/HfO2 Interface
		4.3.2 Pt/HfO2 Interface
	4.4 Filament Formation Process in Cu/HfO2/Pt and Pt/HfO2/Pt ReRAM Structures
	4.5 Bias-Induced Cu Migration Behavior in Cu/HfO2 ReRAM Structure
	4.6 Effect of Bottom Electrode on Interfacial Structure and Switching Behavior
		4.6.1 Electrical Properties of Pt/Cu/HfO2/Pt/Si and Pt/Cu/HfO2/TiN/Si Structures
		4.6.2 Interfacial Structure Between Cu and HfO2
		4.6.3 Correlation Between Ion Migration and Switching Degradation
		4.6.4 Effect of Bottom Electrode on Conductive Filament Formation
	4.7 Summary
	References
5 Switching Control of Oxide-Based Resistive Random-Access Memory by Valence State Control of Oxide
	5.1 Introduction
	5.2 Valence Control Scheme
	5.3 Combinatorial Synthesis
		5.3.1 Ta–Nb Binary Oxide System
		5.3.2 Valence State of Oxides
		5.3.3 Electrical Properties
	5.4 Summary
	References
6 Combinatorial Thin-Film Synthesis for New Nanoelectronics Materials
	6.1 Introduction
	6.2 Combinatorial Thin-Film Synthesis
	6.3 Focused Ar Ion-Beam Sputtering for Combinatorial Synthesis
		6.3.1 Energy of Focused Ar Ion Beam Sputtering
		6.3.2 Metal Thin-Film Growth on Oxide
		6.3.3 Combinatorial Thin-Film Synthesis by FIBS
	6.4 Combinatorial Characterization
		6.4.1 Two-Dimensional X-Ray Diffraction Method
		6.4.2 Atomic Force Microscopy-Based Electrical Property Mapping Method
	6.5 Summary
	References
7 General Summary