Materials Science Research Trends

MATERIALS SCIENCE RESEARCH TRENDS......Page 3
NOTICE TO THE READER......Page 6
CONTENTS......Page 7
PREFACE......Page 9
EXPERT COMMENTARY......Page 15
Abstract......Page 17
Experimental Procedures......Page 18
Results and Discussion......Page 19
Conclusion......Page 27
References......Page 28
RESEARCH AND REVIEW STUDIES......Page 29
Abstract......Page 31
1. Introduction......Page 32
2.1. Copper Based p-TCO Films......Page 37
2.2. Transparent Junctions......Page 43
2.3. Nanostructured p-CuAlO2 Thin Films......Page 48
2.4. Wide Bandgap Field-Emitters......Page 49
3. Origin of P-type Conductivity in P-TCO......Page 50
4.1. Synthesis of CuAlO2 Films by D.C. Sputtering......Page 56
4.2. Synthesis of CuAlO2 Film by Reactive Sputtering......Page 58
4.3. Synthesis of CuAlO2 Film by Wet-Chemical Dip-CoatingTechnique......Page 59
4.4. Characterizations of the Films......Page 61
5.1. Properties of D. C. Sputtered Films......Page 64
5.2. Properties of Reactive Sputtered Films......Page 88
6. Transparent Junctions......Page 102
6.1. Fabrication of All-Transparent Diode......Page 103
6.2. Characterizations of the Diode......Page 105
7.1. Preparation of the Nanostructured Film......Page 110
7.2. Characterization and Discussion......Page 111
8. Field-Emission Properties of CuAlO2 Thin Films......Page 123
8.2. Field-Emission Properties......Page 124
9. Conclusion......Page 133
10. Future Directions......Page 135
References......Page 137
Introduction......Page 147
Computational Model......Page 148
Overall Load-Displacement Response......Page 150
The Case of ri = 1.325 r0......Page 151
The Case of ri = 1.335 r0......Page 155
References......Page 162
1. Introduction......Page 165
2.1. High-Resolution Imaging......Page 167
2.2. FIB Cross-Sectioning......Page 173
2.3. TEM Sample Preparation......Page 175
2.4. Beware of Artifacts......Page 183
3.1. The Study of Stress Corrosion Cracking......Page 185
3.2. Investigation of Wear Resistance of an Aluminum A390 Alloy......Page 193
References......Page 206
Abstract......Page 211
1. Introduction......Page 212
2.1. Thin Film Deposition Using Atmospheric-Pressure Plasma......Page 213
2.2. Utilization of VHF Electric Field......Page 214
2.3. Utilization of rotary electrode......Page 217
3.1. Experimental Methods......Page 218
3.2. OES Spectra......Page 220
3.3. Plasma Impedance......Page 223
4. Atmospheric-Pressure Plasma CVD System......Page 227
5.1. Deposition and Characterization Methods......Page 230
5.2. Deposition Characteristics of Si Films by AP-PCVD......Page 232
5.3. Cleanliness of the Process Ambience......Page 235
5.4. Influence of Electrode Surface Material on the Film Property......Page 242
5.5. Hydrogenated Amorphous Si......Page 244
5.6. Polycrystalline Si......Page 250
5.7. Epitaxial Si......Page 256
Acknowledgements......Page 262
References......Page 263
Introduction......Page 265
Damage Mechanism......Page 268
Modification Mechanism......Page 271
Chromium......Page 273
Magnesium......Page 274
Strontium......Page 276
Lithium......Page 278
Counter-Modifying Elements......Page 279
References......Page 280
1. Introduction......Page 287
2.1. General Considerations......Page 289
2.2. Models......Page 290
3.1. The Hamiltonian......Page 293
3.2. Coherent States as Reference State......Page 294
3.3. Arbitrary Normal States as Initial State......Page 295
4. Scattering Processes......Page 297
5. Conclusion......Page 298
A Estimates of Operators......Page 299
B The van Hove Model......Page 300
References......Page 305
Abstract......Page 307
2. Microstructure Forming Phenomena......Page 308
2.1 Fundamental Growth Processes......Page 309
2.2. Structure Zone Model......Page 311
3. Theoretical Models for Electrical Resistivity......Page 313
4.1. Film Deposition......Page 315
4.2. Effect of Thickness......Page 316
4.3 Effect of Post Annealing......Page 326
5. Electrical Transport......Page 327
5.1. Resistivity as a Function of Film Thickness......Page 328
5.2. Effect of Substrate, Deposition Temperature and post Annealing......Page 331
References......Page 333
Abstract......Page 335
Introduction......Page 336
Numerical Calculation Procedure......Page 338
Results and Discussion......Page 340
1. Second Ignition in Combusted Region (Area I)......Page 344
2. Second Ignition in Reacting Region (Area II)......Page 346
3. Second Ignition in Pre-Heating Region (Area III)......Page 348
4. Ignition before the Stop of Combustion Front......Page 350
Process Map for the Second Ignition......Page 351
Summary and Conclusion......Page 352
References......Page 353
INDEX......Page 355