Lecture Notes in Analog Electronics: Low Voltage Electronic Components

Preface
Introduction to the Lecture Notes of Analogue Electronics (LNAE) SERIES
Contents
About the Author
1.1 Introduction
1.2 Electric Current in Semiconductors
	1.2.1 Electronic Structure of the Isolated Atom
	1.2.2 Electronic Structure of the System of Atoms
	1.2.3 Electric Current in Semiconductors
		1.2.3.1 P- and N-Type Semiconductors
		1.2.3.2 Concentration of Free Carriers
		1.2.3.3 The Fermi Level in a Semiconductor
		1.2.3.4 The Drift Current
		1.2.3.5 The Diffusion Current
		1.2.3.6 The Continuity Equation
1.3 The p-n Junction and the Diode
	1.3.1 The p-n Junction
	1.3.2 Semiconductor Diodes
		1.3.2.1 Characteristic of the Diode
		1.3.2.2 Parameters of the Diode
		1.3.2.3 Temperature Dependence of the Diode Characteristic
		1.3.2.4 Limitations in the Use of the Diode
		1.3.2.5 Capacitances of the Diode
		1.3.2.6 Summary of the Diode Ratings
		1.3.2.7 Varicap Diode
		1.3.2.8 Tunnel Diode
		1.3.2.9 Zener Diode
1.4 Bipolar Transistor—BJT
	1.4.1 Introduction
	1.4.2 Transistor Effect
	1.4.3 BJT Currents and Their Components
	1.4.4 Model of the BJT
	1.4.5 Characteristics of BJT
	1.4.6 The Current Gain Coefficient
	1.4.7 Properties of the BJT at High Frequencies
	1.4.8 Characteristics of BJT in Common–Emitter Configuration
	1.4.9 Safe Operating Area of the BJT
		1.4.9.1 Maximum Dissipated Power
		1.4.9.2 Current Limitations
		1.4.9.3 Minimum Voltage Between Collector and Emitter
		1.4.9.4 Maximum Collector Voltage
		1.4.9.5 Secondary Breakdown
		1.4.9.6 The Complete Active Working Area
		1.4.10 Drift Transistors
1.5 Junction Field Effect Transistor—JFET
	1.5.1 Introduction
	1.5.2 Characteristics of a JFET
		1.5.2.1 Model of the JFET
	1.5.3 Parameters of the JFET
	1.5.4 Active Operating Area of the JFET
	1.5.5 JFET at High Frequencies
	1.5.6 JFET as a Voltage-Controlled Resistor
	1.5.7 Constant Current Diode
1.6 Insulated Gate Field-Effect Transistors—IGFET
	1.6.1 MOS Structure
		1.6.1.1 MOS Capacitances
		1.6.1.2 Threshold Voltage of the MOS Structure
	1.6.2 MOS Transistor
	1.6.3 Modeling the MOSFET
		1.6.3.1 Models of Short-Channel MOS Transistors
		1.6.3.2 MOSFET Model in the Subthreshold Region
	1.6.4 Parameters of the MOSFET
	1.6.5 Active Operation Area of the MOSFET
	1.6.6 Capacitances of the MOSFET
	1.6.7 Dual-Gate MOSFET
1.7 MESFET
	1.7.1 The Device
	1.7.2 MESFET Model for Large Signals
	1.7.3 Characteristics of the MESFET
	1.7.4 Parameters of the MESFET
	1.7.5 Dynamic Properties of the MESFET
	1.7.6 Active Operation Area of the MESFET
	1.7.7 Development of a MESFET
1.8 Optoelectronic Components
	1.8.1 Photodetectors
		1.8.1.1 Photoresistor
		1.8.2.1 Photodiode
		1.8.1.3 Solar Cell
		1.8.1.4 Other Photodetectors
	1.8.2 Light Sources
		1.8.2.1 LED
		1.8.2.2 Semiconductor LASER Diode
	1.8.3 Optocouplers
1.9 Magnetoelectronic Components
	1.9.1 Introduction
	1.9.2 Hall Generators
	1.9.3 Magnetoresistors
	1.9.4 Magnetodiode
	1.9.5 Magnetotransistors
1.10 Basics of Semiconductor Technology
	1.10.1 Introduction
	1.10.2 Processes in the IC Production Technology
		1.10.2.1 Obtaining Silicon Crystals
		1.10.2.2 Formation of p–n Junctions
		1.10.2.3 Semiconductor Surface Protection
		1.10.2.4 Lithography
	1.10.3 Bipolar Integrated Circuits
		1.10.3.1 JFET in Bipolar Integrated Circuits
	1.10.4 MOS Integrated Circuit
	1.10.5 Hybrid Integrated Circuits
		1.10.5.1 Thick-Film Integrated Circuits
		1.10.5.2 Thin-Film Hybrid Integrated Circuits
1.11 Solved Problems
1.12 Examples with SPICE Simulations
1.13 Part Numbering Codes
	1.13.1 The Codes
	1.13.2 Pro-electron or EECA Numbering Coding System
Literature
Index