Ion Implantation in Semiconductors: Proceedings of the II. International Conference on Ion Implantation in Semiconductors, Physics and Technology, Fundamental and Applied Aspects May 24–28, 1971, Garmisch-Partenkirchen, Bavaria, Germany

Front Matter....Pages i-xiii
Ionization and Thermal Dependences of Implantation Disorder in Silicon....Pages 1-1
Localized Mode of Substitutional Carbon in Ion-Implanted Silicon....Pages 2-6
Inventory of Paramagnetic Defects in Ion-Implanted Silicon....Pages 7-7
Structural Differences in Light and Heavy Ion Disorder in Si Studied by Single and Double Alignment Channeling Techniques....Pages 8-16
Investigation of Ion Implantation Damage with Stress Measurements....Pages 17-22
Energy Levels of Defects in Ion Implanted Silicon....Pages 23-32
Photoconductivity of Boron Implanted Silicon....Pages 33-38
Electron Paramagnetic Resonance on Divacancies in Phosphorus-Implanted Silicon....Pages 39-46
Distribution of Boron Implanted Silicon....Pages 47-57
Phosphorus Channeled in Silicon: Profiles and Electrical Activity....Pages 58-69
Enhanced Annealing Effects of Boron Implanted Layers in Silicon by Post-Implantation of Silicon Ions....Pages 70-78
Electrical Profiles of Ion Implanted Silicon and their Comparison with Defect Structures....Pages 79-84
A New Method for Boron Doping of Silicon by Implantation of BF 2 -Molecules....Pages 85-95
Crystal Defects and Electrical Properties in Ion-Implanted Silicon....Pages 96-102
Amorphization of Silicon Crystals Bombarded by 30 keV Phosphorus Ions at Different Temperatures....Pages 103-109
Additional Ion Bombardment of Well Annealed Silicon Crystals Implanted with Phosphorus and Arsenic....Pages 110-118
The Influence of Ion Beam Current Densities on the Electrical Properties of Boron Implanted Silicon....Pages 119-123
The Evaluation of Electrically Active Damage in Hot, Phosphorus Implantations in Silicon by Means of Hall-Effect Measurements....Pages 124-133
Backscattering Analysis and Electrical Behavior of SiC Implanted with 40 keV Indium....Pages 134-140
Anomalous Diffusion of Defects in Ion-Implanted GaAs....Pages 141-150
Enhanced Diffusion in Ion-Bombarded GaAs....Pages 151-156
The Effects of Dose Rate and Implantation Temperature on Lattice Damage and Electrical Activity in Ion-Implanted GaAs....Pages 157-167
The Effects of Arsenic Ion Implantation in GaAs....Pages 168-173
Implantation of Zinc into GaAs at 1 MeV....Pages 174-181
Implantation of Bi into GaP III. Hot-Implant Behavior....Pages 182-192
The Influence of Various Parameters on Radiation Damage in GaP....Pages 193-198
The Retention of Bi Ions Implanted in GaAs....Pages 199-204
The Annealing Behaviour of Gallium Phosphide in the Region 110–500°K after 300 keV Neon Irradiation....Pages 205-211
Compensation of N-Type GaAs by Proton Bombardment....Pages 212-221
Ion Implanted p-n Junctions in GaAs 0.6 P 0.4 ....Pages 222-227
Lattice Disorder and Outdiffusion in Ion Implanted InSb and CdTe....Pages 228-234
Ion-Implantation of Nitrogen into n-Type Cadmium Sulfide....Pages 235-240
Infrared Studies of SiC, Si 3 N 4 , and SiO 2 Formation in Ion-Implanted Silicon....Pages 241-247
Ion Implantation and Amorphous Materials....Pages 248-254
Raman Spectra of Amorphous Semiconductors Prepared by Ion Bombardment....Pages 255-261
Effects of Implantation on Thin Layers of Aluminium Metallization on Silicon....Pages 262-266
Crystalline to Amorphous Transformation in Ion-Bombarded Silicon....Pages 267-273
Analysis of Contact Formation and Surface Layers on Semiconductors....Pages 274-286
New Aspects of Atom Location: Flux Peaking....Pages 287-296
Dimpling — a New Manifestation of Ion Produced Lattice Damage....Pages 297-298
The Use of Ion-Induced X-Rays to Investigate the Concentration Distribution and Atom Location of Boron-Implanted Silicon....Pages 299-306
Electrical Properties of Ion Implanted Germanium....Pages 307-314
Recent Advances in Ion Implanted MOS Technology....Pages 315-328
Recent Advances in Ion Implanted Junction-Device Technology....Pages 329-334
Enhanced Diffusion of Substrate Impurities into Epitaxial Layers in Si by Proton Irradiation....Pages 335-339
Junction Field Effect Transistors Fabricated by Ion Implantation....Pages 340-344
Microwave Transistors Fabricated by Ion-Implantation Selection of Doping Impurities and Prototype Realization....Pages 345-350
Application of Ion Implantation to N-P-N-Transistors....Pages 351-356
New Techniques for Improving High Value Ion Implanted Resistors....Pages 357-361
Piezoresistive Properties of Ion Implanted Layers in Silicon....Pages 362-372
Surface States Induced by Ion Implantation....Pages 373-382
Speed Improvement of Ion Implanted Self Aligned Gate MOS Transistors....Pages 383-388
Chemical and Electrical Behaviour of Ion Implanted SiO 2 Films....Pages 389-396
Ion Implanted Thermoresistive Device for Cryogenic Temperatures....Pages 397-403
Ion Implanted Light Sensing Diodes....Pages 404-409
The Application of Ion Implantation to Avalanche Multiplication Devices....Pages 410-413
Ion Implanted p-n Junctions in Near Intrinsic n-Type Silicon for Nuclear Particle Detectors....Pages 414-419
Boron Implanted Contacts on High Purity Germanium....Pages 420-429
New Ion Implantation Areas....Pages 430-438
Non-Gaussian Implantation Profiles....Pages 439-454
Atom Location in the Case of Enhanced Diffusion Measured by Backscattering Method....Pages 455-458
Enhanced Diffusion and Electrical Properties of Ion Implanted Silicon....Pages 459-465
The Presence of Deep Levels in Silicon Implanted with Channeled Low Energy Phosphorus Ions....Pages 466-472
Mobility, Resistivity and Carrier Concentration Measured on Silicon Implanted with Channeled and Nonchanneled Indium Ions....Pages 473-484
Ionization Energy Determination in Indium Implanted Silicon....Pages 485-488
Some Observations on High Energy Nitrogen Implantations in Silicon....Pages 489-494
Nitrogen Implantation of p-Silicon at Cryogenic Temperatures....Pages 495-498
Conductive Properties of the Ion Implanted Binary System Si 1−X Al X ....Pages 499-506