Handbook of Microwave and Radar Engineering

Foreword
Introduction
	The First Chapter ``Theoretical Basics of Radiolocation´´
	The Second Chapter ``Specific Features of Designing Digital Processing Systems for Radiolocation Systems Based on Microprocess...
	The Third Chapter ``Ground Penetrating Radars´´ (Ground Penetrating Radars)
	The Fourth Chapter ``Antennas and Antenna Devices for Radar Location and Radio Communication´´
	The Fifth Chapter ``Features of Organizing the Process of Designing Radar Microcircuits´´
	The Sixth Chapter ``Power Electronics Devices Based on Wide-Gap Semiconductors´´
	The Seventh Chapter ``Vacuum Electronics´´
	The Eighth Chapter ``Semiconductor SHF Devices for Radar Sets´´
	The Ninth Chapter ``HF and SHF Components for Radar Sets´´
	The Tenth Chapter ``Methods and Means of Ensuring Reliability of Radar and Communication Systems´´
	The Eleventh Chapter ``Radiophotonics in Telecommunication and Radar Location Systems´´
	The Twelfth Chapter ``Measurement of Electrophysical Parameters of Dielectric and Semiconductor Materials and Structures of Mi...
	The Last Chapter ``Radiation Stability of SHF Devices´´
Contents
Chapter 1: Theoretical Basics of Radiolocation
	1.1 Physical Basics of Radiolocation
	1.2 Basic Tactical and Technical Parameters of Radars
	1.3 Classification of Radar Devices and Systems
	1.4 Comparative Analysis of Effective Areas of Passive Range-Difference Systems of Detection of Radio Frequency Sources
		1.4.1 Passive Range-Difference System of RFS Detection with Minimization of Observation Interval in Terms of Travel Difference
		1.4.2 Comparative Analysis of Spatial and Energy Characteristics of Various Implementations of Frequency-Difference Cross-Corr...
	1.5 Features of Application of Millimeter and Sub-millimeter Waves
		1.5.1 Introduction
		1.5.2 Development of Technology of Millimeter and Sub-millimeter Waves
		1.5.3 Fields of Application of Millimeter and Submillimeter Waves in Science and Technology and Main Directions of Developments
		1.5.4 Transmission Lines of Millimeter and Sub-millimeter Waves
	1.6 Main Principles of Building Software Complexes for Simulation of Radiolocation Signals
		1.6.1 Typical Composition of a Software Complex for Modeling of Radiolocation Signals
		1.6.2 Features of Implementation of the Construction Set of Radiolocation Objects
		1.6.3 Features of Setting Spatial Configuration of the Object
		1.6.4 Calculation of HT Projections to the Line of Sight
	1.7 Increasing Noise Immunity of the Radar Using Automatic Compensators of Perturbing Radiators
		1.7.1 Principle of Coherent Compensation of Active Noise Interferences
		1.7.2 Features of Technical Implementation of the Design of Automatic Compensator of Perturbing Radiations
		1.7.3 Assessment of Efficiency of Active Noise Interference Suppression
			1.7.3.1 Effect of the End Radius of Spatial Field Correlation
			1.7.3.2 Effect of Intrinsic Noises of Receiving Channels
			1.7.3.3 Effect of Delay of Received Signals
			1.7.3.4 Effect of Non-linear Distortions
			1.7.3.5 Effect of Mismatch of Frequency Channel Characteristics
			1.7.3.6 Effect of Self-tuning Errors
	References
	Further Reading
Chapter 2: Features of Designing Digital Processing Systems for Radiolocation Systems Based on Microprocessor VLSI Sets
	2.1 Features of Designing DSP Systems
	2.2 Effect of Microelectronic Technologies on the Structure of Computing Systems of Radars
	2.3 DSP Algorithms and Methods of Their Implementation
		2.3.1 Primary and Secondary Signal Processing
		2.3.2 Hierarchy of DSP Tasks and Operations
		2.3.3 Typical DSP Procedures and Hardware Structures
	2.4 General Questions of Building Microelectronic Element Base for DSP Systems
	2.5 Certain Practical Aspects of Designing Microprocessor Sets for Radars
	2.6 Features of Implementing the Algorithm of Synthesis of Linear Antenna Arrays with Required Directivity Pattern and Integer...
	References
Chapter 3: Ground Penetrating Radars
	3.1 Design Features of Ground Penetrating Radars
		3.1.1 Traditional Procedures of Formation and Interpretation of Radio Images
	3.2 Radar Stations of Earth Remote Probing
		3.2.1 ERS (European Remote Sensing Satellite) System
		3.2.2 Space ERS Vehicle ENVISAT-1
		3.2.3 ERS-1 (Japan Earth Resources Satellite; Japanese Name - Fuyo-1)
		3.2.4 Japanese Advanced Land Observation Satellite (ALOS)
		3.2.5 Canadian System of Survey of Earth´s Natural Resources Radarsat (Radar Satellite)
		3.2.6 Russian Program ``Almaz´´
		3.2.7 Russian Module of Earth´s Remote Sensing ``Priroda´´ (``Nature´´)
		3.2.8 ERS Space Vehicles COSMO (Italy, Spain, Greece)
		3.2.9 Double-Purpose ERS SV COSMO-SkyMed (Italy)
		3.2.10 Radar Intelligence System Lacrosse
		3.2.11 Radar Location Complex SIR-C/X-SAR
		3.2.12 French ERS Space Vehicle Osiris Based on Radar 2000 Project
	3.3 Ground Penetrating Radars with Increased Resolution
	3.4 Ultra-Wideband Devices of Radar Systems
		3.4.1 Basic Characteristics of UWB Devices
		3.4.2 Classification of US UWB Radars
			3.4.2.1 Radars of Sub-surface Probing of Building Structures
			3.4.2.2 Through-The-Wall Radars
			3.4.2.3 Stationary Surveillance Radars
			3.4.2.4 Medical Visualization Systems
			3.4.2.5 Automobile Radars
			3.4.2.6 Stationary UWB Systems (for Indoor Applications)
			3.4.2.7 Mobile (Portable) UWB Systems
		3.4.3 Development of UWB Technology in Russia
	3.5 Linear FM Ground Penetrating Radar with Increased Resolution
		3.5.1 Structure of a Ground Penetrating Radar with Ultra-Wideband Quasi-Continuous Linear FM Signal
		3.5.2 Path of Generation and Processing of Ultra-Wideband Quasi-Continuous Linear FM Signals of Ground Penetrating Radar
	3.6 Features of Using Ground Penetrating Radars from Aircrafts
	3.7 Russian Georadars
		3.7.1 Ground Penetrating Radars of the ``Loza´´ Series
		3.7.2 ``Zond-2´´ Georadars
		3.7.3 ``OKO´´ Georadars
	References
Chapter 4: Antennas and Antenna Devices for Radar Location and Radio Communication
	4.1 Main Parameters and Types of Antennas
		4.1.1 Introduction
		4.1.2 Characteristics of Radar Set Antennas
			4.1.2.1 Antenna Gain
			4.1.2.2 Antenna Beam (Directivity) Pattern
			4.1.2.3 Beam Width
			4.1.2.4 Aperture
			4.1.2.5 Main and Additional Lobes
			4.1.2.6 Front to Back Intensity Ratio
			4.1.2.7 Polarization
			4.1.2.8 Linear Polarization
			4.1.2.9 Circular Polarization
			4.1.2.10 Half-Wave Antenna
			4.1.2.11 Parabolic Antenna
			4.1.2.12 Blade Beam Antenna
			4.1.2.13 Offset Antenna
			4.1.2.14 Cosecant-Squared Antennas
			4.1.2.15 Inverse Cosecant-Squared Beam Pattern
			4.1.2.16 Cosecant-Squared Antenna with Layered Beam
			4.1.2.17 Phased Antenna Arrays
			4.1.2.18 Linear Antenna Array
			4.1.2.19 Planar Array
			4.1.2.20 Frequency Scanned Antenna Array
			4.1.2.21 Phase Shifter
			4.1.2.22 Monopulse Antennas
			4.1.2.23 Conical Scanning
		4.1.3 Basic Antenna Types and Technical Characteristics
			4.1.3.1 Dipole Antenna
			4.1.3.2 Asymmetrical Vibrator (Monopole)
			4.1.3.3 Directional Antennas
			4.1.3.4 Log-Periodic Antenna
			4.1.3.5 Active Antennas
	4.2 Examples of Design Concepts of Antennas for Radio Communication Systems
		4.2.1 Small-Sized Antenna for Portable Wireless Systems of Thee WIMAX/WLAN Standard
		4.2.2 Wideband Microstrip Antenna with Increased Gain Factor
		4.2.3 Wideband SHF Travelling-Wave Antenna
		4.2.4 Man-Portable Antennas
		4.2.5 Multiband Patch Antenna
		4.2.6 Microstrip Antennas on Thin Substrate
		4.2.7 Flat Reflective Printed Antenna for Cellular Communication Systems
			4.2.7.1 Principle of Operation of a Parabolic Dish Printed Antenna
		4.2.8 Features of Designing Mirror Reflector Phased Antenna Arrays
			4.2.8.1 Calculation of Dimensions of PAA Reflectors
			4.2.8.2 Structure and Parameters of a Planar Reflector Antenna
		4.2.9 Three-Range Slot Antenna for Wireless Communication Systems
		4.2.10 Wideband Vivaldi Antenna on Ceramic Substrate for 60 GHz
		4.2.11 Methodological Basis of Calculation of Mirror Dish Antennas Using Modern Microwave CAD Systems
			4.2.11.1 Modeling of a Circular Mirror Antenna
			4.2.11.2 Offset Antenna Modeling
		4.2.12 Wideband Log-Spiral Antenna with Circular Polarization
	4.3 Phased Antenna Arrays
		4.3.1 Classification, Structure and Features of Application of Phased Antenna Arrays
		4.3.2 Detailed Description of the Structure and Operating Principles of PAA Without a Single Formula
	4.4 Design Features and Reliability Assessment of Power Supply Systems of Active Electronically Scanned Arrays of Radar Statio...
	4.5 Components for Provision of Mechanical Positioning of Antenna Systems of Radars and Radio Communication
		4.5.1 Position Sensors (Encoders)
		4.5.2 Rotary Junctions of Positioning Systems
	4.6 Condition and Prospects of Development of Antenna Devices for Radars and Communication Means
		4.6.1 Analysis of the Current State of Development of Antenna Devices in Radar Sets
		4.6.2 Main Directions of Development of Antenna Systems of Radar Sets
		4.6.3 Ways of Solving Technical Problems of Development of Advanced Antenna Systems of Radar Sets
			4.6.3.1 Technical Solutions for the Direction of Development of Large Space Antennas
			4.6.3.2 Main Advanced Directions of Studies for Creation of Highly Efficient Antennas with Signal Processing
	References
	Further Reading for Chapter 5
Chapter 5: Features of Organizing the Process of Designing Radar Microcircuits
	5.1 Features of Organizing the Process of Designing Radio Frequency Microcircuits
	5.2 Possible Types of Technologies Used for Production of RF and SHF Products
	5.3 Software Means for Designing SHF ICs
		5.3.1 Analysis of Possibilities and Advantages of Software Products of Cadence Design Systems, Inc.
			5.3.1.1 Analog Artist Design System
			5.3.1.2 Composer IC Design Environment
			5.3.1.3 The Use of HDL Blocks Makes Design Real
			5.3.1.4 Real Designing in a Team
			5.3.1.5 All-Round Software Shell for IC Design
			5.3.1.6 Synthesis Means
			5.3.1.7 Modeling
			5.3.1.8 Timing Analysis
			5.3.1.9 Calculation of Time Delays
			5.3.1.10 Layout Planning
			5.3.1.11 Test Synthesis
			5.3.1.12 Arrangement and Routing System
			5.3.1.13 Physical Verification
			5.3.1.14 Adaptation Means
		5.3.2 List of Necessary Design Libraries and Their Functional Description
		5.3.3 Features of Teaching Methods of Designing Digital Systems Using VHDL Language
		5.3.4 Detailed Description of an IC Design Process
		5.3.5 Multisim Blue Software for Modeling of Radioelectronic Devices
	5.4 Features of Circuit Modeling of Phase Shifters for Radar Sets
		5.4.1 Basic Parameters of a Standard Phase Shifter
		5.4.2 Phase Shifter Designing Using CAD Means
	References
Chapter 6: Power Electronics Devices Based on Wide-Gap Semiconductors
	6.1 Main Properties of Materials Based on Large Gap Semiconductors
	6.2 Evolution of Silicon Carbide Production Technology
	6.3 Main Manufacturers of SiC-Based Power Electronics Devices
	6.4 Designs of GaN-Based Power Devices
		6.4.1 Diode structures
		6.4.2 MOSFET
		6.4.3 Structures Based on 2D Electron Gas
		6.4.4 Lateral Structures
		6.4.5 Vertical Structures
	6.5 State and Trends of Development of the Technology of Powerful GaN-Based SHF Transistors and MICs
	6.6 Wideband Transistor Power Amplifiers of the Microwave Range
	6.7 Features of Basic Process Operations of Production of GaN Device Crystals
		6.7.1 Epitaxy
		6.7.2 Formation of Contacts
		6.7.3 Lithography
		6.7.4 Etching and Groove Production Processes
		6.7.5 Surface Formation and Device Passivation
	References
Chapter 7: Vacuum Electronics
	7.1 Operating Principle, Classification and Technological Features of Vacuum Electronic Devices
	7.2 Application of Vacuum Electronics in US Military Equipment
	7.3 Main Values of VTD Parameters Achieved by 2000
	7.4 Microwave Integrated Vacuum Electronics
	7.5 High-Power SHF Modules
	7.6 Vacuum SHF Devices of Centimeter, Millimeter and Terahertz Ranges
		7.6.1 Vacuum SHF Devices of the Centimeter Range
		7.6.2 Vacuum SHF Devices of Millimeter and Terahertz Ranges
	References
Chapter 8: Semiconductor SHF Devices for Radar Sets
	8.1 Element Base of TRMs for Phased Antenna Arrays
		8.1.1 Attenuators for Transceiver Modules of Active Electronically Scanned Arrays
		8.1.2 Two-Pole Switches for AESA
		8.1.3 AESA Phase Shifters
		8.1.4 Preamplifiers of Transceivers for AESA
		8.1.5 Low Noise Amplifiers and Power Amplifiers for AESA
		8.1.6 Noise-Suppressing Filters for AESA
	8.2 Russian Element Base of SHF Devices for Radar Sets
		8.2.1 Russian Active GaAs Elements for Transceiver SHF Modules of the Centimeter Range
		8.2.2 SHF Devices by JSC ``Microwave Systems´´
			8.2.2.1 Wideband Silicon Carbide-Based Power Amplifiers of the Decimeter Range
			8.2.2.2 Ultra-Wideband Microwave Power Amplifiers for the Range of 6-18 GHz
			8.2.2.3 Technical Parameters of the Series of High and Low Power SHF Amplifiers by Microwave Systems
	8.3 Russian GaAs Based Microwave Components by ``Planeta-Argall´´
		8.3.1 Transistor Amplifiers
		8.3.2 Protective Devices
		8.3.3 Microwave Transistors
	8.4 Features of Designing SAW Frequency Selective Microcircuits
	8.5 Microwave Radio Receivers by RSE ``Pulsar´´
	8.6 High Speed Hybrid Converters for Radar Sets
	8.7 Foreign Microcircuits for GaN-Based Transceiver Modules of Radar Systems
		8.7.1 GaN-Based AESA TRMs
		8.7.2 Monolithic GaN Microwave Power Amplifiers
		8.7.3 GaN-Based SHF Microcircuits of Switches
		8.7.4 Optimization of Design of GaN SHF Transistors
		8.7.5 SHF Microcircuits by RFHIC
			8.7.5.1 GaN-Based SHF Microcircuits by RFHIC for Wireless Communication Systems
			8.7.5.2 GaN Amplifiers for Pulse Radar Sets
	8.8 HF and SHF Devices by Mini-Circuits
		8.8.1 Integrated Monolithic Amplifiers of the VNA Group
		8.8.2 Double Balanced Mixers of the MCA1 Group
		8.8.3 Series of Multi-purpose High-Frequency Amplifiers
		8.8.4 Frequency Mixers
		8.8.5 Attenuators of HF and SHF Ranges
	8.9 SHF Chips by Hittite Microwave
		8.9.1 SHF Chips of Attenuators by Hittite Microwave
			8.9.1.1 Standard Attenuator Chips with Analog Control
			8.9.1.2 Attenuator Chips with Digital Control
			8.9.1.3 SHF and Ultra-Wideband Amplifiers with Fixed Gain
		8.9.2 Monolithic SHF Microcircuits of Full Synthesizers by Hittite Microwave
			8.9.2.1 Monolithic Chips PLL of SHF Synthesizers
			8.9.2.2 Three-Band Monolithic Microcircuits of Synthesizers
			8.9.2.3 Wide-Band Monolithic Microcircuits of Synthesizers
			8.9.2.4 Chips HMC983 and HMC984 Are for Building of Ultra-Wideband Synthesizers
			8.9.2.5 Monolithic Chips of Wide-Band Frequency Synthesizers HMC701/702/703
			8.9.2.6 Software for Monolithic Chips of Synthesizers
	8.10 Specifics of Selecting Element Base for Secondary Power Supply Systems of AESA Transceiver Modules
		8.10.1 Principles of Building Power Supply Systems for AESA TRMs
		8.10.2 Technological Features of Production of DC/DC Converters
		8.10.3 Features of SynQor Converters of the Hi-Rel Series
		8.10.4 Electromagnetic Processes in the Power Supply System of AESA Transceivers
	References
Chapter 9: HF and SHF Components for Radar Sets
	9.1 Microstrip Filters for SHF Systems
	9.2 Features of Using Acoustic Wave-Based Microwave Filters
	9.3 Features of Using Special Design Solutions of Cable Sealing Glands for SHF Devices
	9.4 Russian Powerful Stripline SHF Resistors
	9.5 High Frequency Connections for Active Phased Antenna Arrays
	9.6 HF and SHF Components of Spectrum Advanced Specialty Products
	9.7 Ceramic SHF Components for Radar Sets
		9.7.1 Ceramic Capacitors
	9.8 Line Filters and Film Capacitors for Radar Sets
	9.9 Special Connectors and Cable Assemblies
	9.10 Evolution of Packages for Devices and Units of Radioelectronic Equipment
	References
Chapter 10: Methods and Means of Ensuring Reliability of Radar and Communication Systems
	10.1 Electromagnetic Compatibility: Terms, Definitions, Classification
		10.1.1 The Nature of Electromagnetic Interference
		10.1.2 EMC Terms, Definitions and Classification
		10.1.3 Regulations and Standards for Electromagnetic Compatibility
	10.2 Ensuring Electromagnetic Compatibility of Microprocessor Control Units of Electronic Devices
		10.2.1 Design Features of Printed Circuit Boards Optimized in Terms of Electromagnetic Compatibility
		10.2.2 Measurement of the Level of Interference Emitted by Microcontrollers
		10.2.3 Ensuring Electromagnetic Compatibility in Wired Communication Systems
		10.2.4 Design of Printed Circuit Boards for High-Speed Communication Systems
	10.3 Protective SHF Devices for Radar Stations and Communication Systems
		10.3.1 Classification and Features of Creation of Protective SHF Devices for Radar Location and Communication
		10.3.2 Gas Discharge Protective Devices
		10.3.3 Semiconductor Protective Devices
		10.3.4 Vacuum Protective Devices
	10.4 Features of Assessment of the Resource of SHF Devices Considering the Reliability of Mechanical Components
	10.5 Features of Organizing Electric Power Supply Circuits of Radar Set Microwave Devices
	10.6 HF and SHF Components for Suppression of Electromagnetic Interference
	10.7 Assessment of Resistance of Microcircuits to the Effect of Electromagnetic Interference
	10.8 Standard Methods of Testing SHF Devices for Resistance to Electrostatic Discharges
		10.8.1 Standards of Tests at the Device Level
			10.8.1.1 Bioman
			10.8.1.2 Machine Model
			10.8.1.3 Charged Device Model
		10.8.2 Comparison of Test Methods at the Device Level
		10.8.3 Standards of Tests at the System Level
			10.8.3.1 Electrostatic Discharge Immunity
			10.8.3.2 High-Speed Transient Immunity
			10.8.3.3 Surge Immunity
	10.9 Passive Intermodulation in SHF Circuits
		10.9.1 Mechanisms of the Occurrence of Passive Intermodulation
		10.9.2 Causes of the Passive Intermodulation and Methods for Reducing its Level in RF Connectors
		10.9.3 Passive Intermodulation in the Printed Circuit Board Material
		10.9.4 PIM in Band, Coaxial and Waveguide Transmission Lines
		10.9.5 PIM in Directional Couplers, Frequency Duplexers and Transformers
		10.9.6 External PIM Sources
		10.9.7 PIM Level Evaluation Methods
		10.9.8 Specialized Equipment for PIM Testing
	References
Chapter 11: Radiophotonics in Telecommunication and Radar Location Systems
	11.1 Photonic Devices Based on Surface-Emitting Lasers with Vertical Resonators
	11.2 Design of a Long-Wave Alloyed Surface-Emitting Laser
	11.3 Basic Technical Characteristics of a Long-Wave Alloyed Surface-Emitting Laser
		11.3.1 Electrical and Power Characteristics
		11.3.2 Low-Signal Frequency-Modulation Characteristics
		11.3.3 Noise Characteristics
		11.3.4 Linearity in High Signal Mode
		11.3.5 Spectral and Tuning Characteristics
	11.4 Continuous Generation Lasers: VECSEL, MEMS-VCSEL, LICSEL
	11.5 Pulse Generation Lasers: VECSEL-SESAM, MIXSEL
	11.6 Main Directions of Fundamental Studies in the Field of Component Base of Radiophotonics and Functional Devices Based on It
	11.7 Examples of Use of Radiophotonic Devices in Radar Location
		11.7.1 Active Delay Lines
		11.7.2 Channels for Long-Distance Transmission of Microwave Signals
		11.7.3 Systems of Distribution of Radio Signals over Radar AESA Curtain (Figs. 11.34, 11.35, 11.36, and 11.37)
		11.7.4 Measurement and Calibration Means for Radar Sets
	11.8 Microwave Photodetectors for Radiophotonics, Radar Location and Optic Fiber Communication Systems
		11.8.1 Physical Principles of Operation of Microwave P-I-N Photoelectric Detectors
		11.8.2 Physical Mechanisms of Limiting Photocurrent of a P-I-N-Photodiode
		11.8.3 Design Features of Photodiodes
			11.8.3.1 Double Depletion Region Photodiode
			11.8.3.2 Photodiode with Partially Depleted Absorber (PDA)
			11.8.3.3 Unipolar Heterojunction Photodiode (UTC)
	References
Chapter 12: Measurement of Electrophysical Parameters of Dielectric and Semiconductor Materials and Structures of Microwave El...
	12.1 Analysis of the Modern State of Studies in the Field of Technologies of Parameter Control of Dielectric and Conductive Ma...
		12.1.1 Features of Using Microwave Measurement Methods in Semiconductor Microwave Electronics
		12.1.2 Measurement of Electrophysical Parameters of Materials by Waveguide Methods
		12.1.3 Measurement of Semiconductor Parameters by Bridge Methods
		12.1.4 Measurement of Semiconductor Parameters by Cavity Methods
		12.1.5 Measurement of Material Parameters by Waveguide Dielectric Resonance Method
		12.1.6 Measurement of Parameters of Materials and Structures by Autodyne Methods
		12.1.7 Measurement of Material Parameters Using Synchronized Oscillators
		12.1.8 Near-Field SHF Microscopy of Material Properties
		12.1.9 Measurement of Thickness of Nanometer Metal Layers and Conductivity of Semiconductor in Metal-Semiconductor Structures ...
	12.2 Mathematical Model and Results of Computer Modeling of the Interaction Between Microwave Radiation with One-Dimensional W...
		12.2.1 Interaction of SHF Radiation with Multi-Layered Structures with Planes of Layers Perpendicular to the Radiation Propaga...
			12.2.1.1 Mathematical Model
			12.2.1.2 Results of Computer Modeling of Reflection Spectra of Waveguide Photonic Structures in Different Frequency Ranges
			12.2.1.3 Results of Computer Modeling of the Dependence of Reflection Spectra of Waveguide Photonic Structures on the Position...
			12.2.1.4 Results of Computer Modeling of the Dependence of Reflection Spectra of Waveguide Photonic Structures on Irregularity...
			12.2.1.5 Results of Computer Modeling of Reflection Spectra of Waveguide Photonic Structures Containing Transmitting Layers
	12.3 Theoretical Basis for the Method of Measurement of SHF Material Parameters Using One-Dimensional Waveguide Photonic Struc...
		12.3.1 Measurement of Permittivity of Materials
		12.3.2 Measurement of Complex Permittivity of Materials with Losses
		12.3.3 Measurement of Thicknesses of Nanometer Metal Films on Dielectric or Semiconductor Substrates
	12.4 Results of Experimental Study of Interaction of SHF Radiation with One-Dimensional Waveguide Photonic Structures
		12.4.1 Results of Experimental Study of Reflection and Transmission Spectra of Waveguide Photonic Crystals
		12.4.2 Use of Waveguide Photonic Structures for Measurement of Parameters of Nanometer Metal Layers on Semiconductor and Diele...
			12.4.2.1 Experimental Study of Frequency Dependencies of the Reflection Coefficient of Photonic Structures Containing Nanomete...
			12.4.2.2 Measurement of Electrical Conductivity of Metal Films Applied to Dielectric Substrates
			12.4.2.3 Measurement of Thicknesses of Metal Films Applied to Semiconductor Substrates
			12.4.2.4 Measurement of Thickness of Nanometer Metal Layers and Electrical Conductivity of Semiconductor in Metal-Semiconducto...
		12.4.3 Use of Waveguide Photonic Structures for Measurement of Parameters of Dielectric Materials
			12.4.3.1 Experimental Study of Frequency Dependencies of the Reflection Coefficient of Photonic Structures Containing Irregula...
			12.4.3.2 Measurement of Permittivity of Materials with Low Losses
			12.4.3.3 Measurement of Real and Imaginary Parts of Complex Dielectric Permittivity of Materials with Losses
	References
Chapter 13: Radiation Stability of SHF Devices
	13.1 Impact of Ionizing Radiation on the Characteristics of Silicon-Germanium Integrated Circuits of the SHF Range
		13.1.1 Heterostructural Bipolar Transistors
		13.1.2 SHF LNA and WBA Chips
		13.1.3 SHF VCG Chips
	13.2 Design Features of the Radiation-Resistant Library for Designing SHF Functional Units Based on CMOS SOI Technology
		13.2.1 High-frequency and Noise Properties of Domestic SOI MOS Transistors
		13.2.2 Instrument Modeling of SOI MOS Transistors
		13.2.3 MOS VVCs
		13.2.4 R, , L Elements
		13.2.5 Design of Functional Elements of SHF Path
	13.3 Features of the Mechanisms of Influence of Space Factors on the Formation of Local Radiation Effects
	13.4 Features of the Design of Passive Elements for Radiation-Resistant Monolithic Silicon-Germanium SHF ICs
		13.4.1 Microstrip Transmission Line
		13.4.2 Integral Inductances
		13.4.3 Balance-to-Unbalance Transformers
	References
Index