Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors: Volume 1, Materials and Technology

Preface
Contents
About the Editor
Part I: II-VI Semiconductors Properties
	Chapter 1: Introduction in II-VI Semiconductors
		1.1 Introduction
		1.2 The History of II-VI Semiconductors: A Brief Journey
		1.3 Material Properties
			1.3.1 General Trends: Chemistry, Structure and Band Gaps
			1.3.2 II-VI Semiconductor Alloys
			1.3.3 Band Alignment and Heterostructures
			1.3.4 Conductivity Type and Doping
			1.3.5 Nanostructures
		1.4 Applications
			1.4.1 Infrared Detectors and Focal Plane Arrays
			1.4.2 Devices in the THz Range
			1.4.3 X-Ray and Gamma Ray Detectors
			1.4.4 Solar Cells, UV-VIS Detectors, and Light-Emitting Devices
			1.4.5 Biosensors
			1.4.6 Gas Sensors
			1.4.7 Photocatalysis
		1.5 Conclusions and Outlook
		References
	Chapter 2: Cd- and Zn-Based Wide Band Gap II-VI Semiconductors
		2.1 General Characterization
		2.2 Crystallography
		2.3 Chemical Bond
		2.4 Band Structure
		2.5 Physical Properties
		2.6 Stability
		2.7 Chemical Properties
		2.8 Material Technologies
			2.8.1 Single Crystals
			2.8.2 Thin Films
			2.8.3 Nanocrystals and Polycrystals
		2.9 Electrophysical Properties
			2.9.1 Undoped Materials
			2.9.2 Doping of II-VI Compounds
		2.10 Surface Properties
		2.11 Catalytic Properties
		2.12 Applications
		References
	Chapter 3: Hg-Based Narrow Bandgap II-VI Semiconductors
		3.1 Introduction
		3.2 Crystallography
		3.3 Synthesis
		3.4 Chemical Properties
		3.5 Stability
		3.6 Chemical Bond
		3.7 Band Diagram
		3.8 Specific Properties of Zero or Very Narrow Bandgap HgSe and HgTe
		3.9 Physical Parameters
		3.10 Electrophysical Properties
		3.11 Doping
		3.12 Applications
		3.13 Limitations
		References
	Chapter 4: Ternary II-VI Alloys Promising for Application in Photodetectors
		4.1 Introduction
		4.2 Properties of Ternary II-VI Alloys
			4.2.1 Structural Properties of Ternary II-VI Alloys
			4.2.2 Electronic Properties of Ternary II-VI Alloys
			4.2.3 Optical Absorption
		4.3 Overview of Relevant Photovoltaic Device Physics
		4.4 Effects Relevant to Photodetector Applications in II-VI Semiconductor
		4.5 Cadmium Zinc Telluride (CZT, CdZnTe)
		4.6 Mercury Cadmium Telluride (HCT, HgCdTe)
		4.7 Mercury Zinc Telluride (HZT, HgZnTe)
		4.8 Dimensionality
		References
	Chapter 5: II-VI Semiconductors Bandgap Engineering
		5.1 Introduction
		5.2 Approaches for Bandgap Engineering
		5.3 Bandgap Engineering via II-VI Solid Solutions Formation
		5.4 BandGap Engineering via Doping
		5.5 BandGap Engineering via Heterostructures Forming (Superlattices, Quantum Wells)
		5.6 BandGap Engineering via Temperature Control
		5.7 BandGap Engineering via Lattice Strain
		5.8 BandGap Engineering via Size Control of Nanoparticles (QDs) Size
		5.9 BandGap Engineering via Modification of Core-Shell Structures
		5.10 BandGap Engineering via Technology Control
		References
	Chapter 6: Electronic Structure of Mercury Chalcogenides Nanocrystals
		6.1 Introduction
		6.2 Synthesis
		6.3 Electronic Structure
			6.3.1 Confined HgTe
			6.3.2 Intraband Absorption and Doping
			6.3.3 Doping and Surface Chemistry
			6.3.4 Temperature and Pressure Effects on the Band Gap
			6.3.5 Experimental Determination of the Electronic Structure: Results from Photoemission
			6.3.6 Carrier Dynamics from fs to ms
		6.4 Optical Features
			6.4.1 Light Emission: Pholuminescence, Lasing, and Electroluminescence
			6.4.2 Optical Index
		6.5 Conclusion
		References
	Chapter 7: Colloidal Nanoparticles of II-VI Semiconductor Compounds and Their Participation in Photosensitization of Metal Oxi...
		7.1 Introduction
		7.2 Recent Approaches to the Colloidal Synthesis of Nanocrystals and Nanocrystal Heterostructures Based on II-VI Semiconductors
		7.3 Electronic Properties of Nanoparticles of II-VI Semiconductors
		7.4 Photosensitive Properties of II-VI Semiconductors/Metal Oxides Nanocomposites
		7.5 Conclusions
		References
	Chapter 8: Quantum Dot (QD)-Induced Toxicity and Biocompatibility
		8.1 Introduction
		8.2 Properties of Quantum Dots (QDs)
		8.3 Core/Shell Nanostructures
		8.4 Surface Modifications
			8.4.1 Polymer Coating
			8.4.2 Silanization
		8.5 Biocompatibility
			8.5.1 Intracellular Fate of QDs in Cells
				8.5.1.1 Cellular Uptake of QDs
				8.5.1.2 Dynamic Process of Uptake and Elimination of QDs
					8.5.1.2.1 Cadmium-Based QDs
					8.5.1.2.2 Indium-Based QDs
					8.5.1.2.3 Silver-Based QDs
					8.5.1.2.4 Silicon-Based QDs
					8.5.1.2.5 Carbon-Based QDs
		8.6 Elucidation of Potential Toxicity
			8.6.1 Genotoxicity
			8.6.2 Cytotoxicity
			8.6.3 Photo-Induced Toxicity
		8.7 Molecular Mechanisms Induced by QDs
			8.7.1 Reactive Oxygen Species and Oxidative Stress
			8.7.2 Release of Cadmium from Cadmium-Containing Quantum Dots
			8.7.3 Elevated Intracellular Ca2+ Levels
		8.8 Absorption, Distribution, Metabolism, and Excretion of QDs In Vivo
		8.9 Conclusion and Future Perspectives
		References
Part II: Material Technology
	Chapter 9: Features of Single-Crystal Growth of CdTe and Cd1-xZnxTe Compounds Designed for Radiation Detectors
		9.1 Introduction
		9.2 Problems of Growing Large Single Crystals
		9.3 Features of Growing Single Crystals of CdTe and Cd1-xZnxTe
			9.3.1 Vapor-Phase Growing Method
			9.3.2 Growing from Tellurium Solution-Melt
			9.3.3 Melt Growing
				9.3.3.1 Bridgman Method
					9.3.3.1.1 Bridgman-Stockbarger Method
					9.3.3.1.2 High-Pressure Bridgman Method
					9.3.3.1.3 Low-Pressure Bridgman Method
				9.3.3.2 Vertical Gradient Freezing (VGF) Method or Modified Bridgman Method
				9.3.3.3 Zone Felting Method
		9.4 Market of CdTe and CdZnTe Crystals
		9.5 Electrical Conductivity Control
		References
	Chapter 10: Thin Films of Wide Band Gap II-VI Semiconductor Compounds: Features of Preparation
		10.1 Introduction
		10.2 Vacuum Thermal Evaporation
		10.3 Magnetron Sputtering
		10.4 Pulsed Laser Deposition Technique
		10.5 Ion Beam Sputtering (IBS)
		10.6 Chemical Vapor Deposition (CVD)
		10.7 Epitaxial Deposition
		10.8 Successive Ionic Layer Adsorption and Reaction (SILAR)
		10.9 Chemical Bath Deposition (CBD)
		10.10 Aerosol Spray Pyrolysis (ASP)
		10.11 Electrochemical Deposition
		10.12 Close-Space Sublimation Method
		References
	Chapter 11: Synthesis of II-VI Semiconductor Nanocrystals
		11.1 Introduction
		11.2 Mechanochemical Method
		11.3 Co-precipitation Methods
		11.4 The Sol-Gel Processing
		11.5 Hydrothermal Technique
		11.6 Solvothermal Technique
		11.7 Sonochemical Method
		11.8 Microemulsion Technique
		11.9 Microwave-Assisted Method
		11.10 Hot-Injection and One-Step Colloidal Method
		11.11 Photochemical Synthesis
		11.12 Green Synthesis
		References
	Chapter 12: II-VI Semiconductor-Based Nanomaterials
		12.1 Introduction
		12.2 Colloidal Nanoparticles
		12.3 Synthesis of 1D Nanostructures
		12.4 2D Nanomaterials (Nanosheets)
		12.5 Core-Shell Structures
			12.5.1 Core-Shell QDs
			12.5.2 Core-Shell 1D Structures
		12.6 Hollow Nanostructures
		12.7 Stability Issues of Sensors Based on II-VI Nanoparticles
		References
	Chapter 13: CdTe-Based Nanoparticles Synthesized in Solutions
		13.1 Introduction
		13.2 Synthesis of CdTe-Based Nanoparticles
		13.3 Doping, Alloying, and Ion-Sensing via Incorporation of Transition Metals
			13.3.1 Incorporation of Hg2+ Ions into the Structure of CdTe Nanocrystals
			13.3.2 Incorporation of Mn2+ and Zn2+ Ions into the Structure of CdTe Nanocrystals
				13.3.2.1 CdTe:Mn
				13.3.2.2 CdTe:Zn
		13.4 Other CdTe-Based Alloys
		13.5 CdTe-Based Core-Shell Structures
		References
	Chapter 14: II-VI Quantum Dots and Their Surface Functionalization
		14.1 Introduction
			14.1.1 Quantum Dots
			14.1.2 Synthesis of Semiconductor Quantum Dots
		14.2 Stability and Biocompatibility of II-VI QDs
			14.2.1 Stability of II-VI Colloidal Nanoparticles
			14.2.2 Surface Modification and Photostability
			14.2.3 Biocompatibility
		14.3 Surface Functionalization of Quantum Dots
			14.3.1 Phase Transfer of Nanoparticles
				14.3.1.1 Ligand Exchange
				14.3.1.2 Ligand Modification
				14.3.1.3 Additional Coating Layers
			14.3.2 Surface Functional Groups
			14.3.3 Surface Modification with Polyethylene Glycol
			14.3.4 Polymer Coating
		14.4 Biofunctionalization and Bioconjugation of II-VI QDs for Biomedical and Biosensing Applications
			14.4.1 Introduction in Bioconjugation
			14.4.2 Applications of Bioconjugation
				14.4.2.1 Semiconductor Quantum Dots as Biological Labels
				14.4.2.2 Biosensors
				14.4.2.3 Quantum Dots for Drug Delivery and Therapeutics
				14.4.2.4 Fluorescent Dyes and Other Functions, Multifunctional Particles
		14.5 Summary
		References
	Chapter 15: HgCdTe Device Technology
		15.1 Introduction
		15.2 HgCdTe Material Technology
			15.2.1 HgCdTe Bulk Crystal Technology
				15.2.1.1 Solid-State Recrystallization Method
				15.2.1.2 Traveling Heater Method
				15.2.1.3 Bridgman Method
			15.2.2 HgCdTe Epilayer Technologies
				15.2.2.1 Liquid-Phase Epitaxy
				15.2.2.2 Metal-Organic Vapor-Phase Epitaxy
				15.2.2.3 Molecular Beam Epitaxy
		15.3 Etching Technology
		15.4 HgCdTe Surface Passivation Technology
		15.5 Electric Contact Technology
		15.6 p-n Junction Technology
			15.6.1 Mercury Diffusion
			15.6.2 Ion Etching
			15.6.3 Reactive Ion Etching
			15.6.4 Ion Implantation
			15.6.5 p-on-n Versus n-on-p HgCdTe Diodes
		15.7 Conclusion
		References
	Chapter 16: II-VI Wide-Bandgap Semiconductor Device Technology: Deposition, Doping, and Etchig
		16.1 Introduction
		16.2 Synthesis and Deposition of II-VI Semiconductors
			16.2.1 Synthesis of Single Crystals
			16.2.2 Film Deposition
		16.3 Doping of II-VI Semiconductors
			16.3.1 General Consideration
			16.3.2 Ion Implantation
			16.3.3 Formation of p-n Junction
		16.4 Etching of II-VI Semiconductor Compounds
			16.4.1 Chemical Wet Etching
			16.4.2 Dry Etching
		References
	Chapter 17: II-VI Wide-Bandgap Semiconductor Device Technology: Schottky Barrier, Ohmic Contacts, and Heterostructures
		17.1 Introduction
		17.2 Schottky Diodes
			17.2.1 II-VI Semiconductor-Based Schottky Barriers
			17.2.2 Aging of II-VI Semiconductor-Based Schottky Diodes
		17.3 Ohmic Contacts
			17.3.1 p-CdTe
			17.3.2 ZnSe
			17.3.3 n-ZnS
			17.3.4 n-CdS
		17.4 Heterojunctions
		References
	Chapter 18: II-VI Wide-Bandgap Semiconductor Device Technology: Stability and Oxidation
		18.1 Introduction
		18.2 Stability of II-VI Semiconductor-Based Devices
			18.2.1 Stability of CdTe/CdS Solar Cells
			18.2.2 Stability of II-VI Semiconductor-Based Quantum Dots
		18.3 Native Oxides
		18.4 Thermal Oxidation of II-VI Compounds
			18.4.1 CdS
			18.4.2 ZnS
			18.4.3 ZnTe and CdTe
			18.4.4 ZnSe and CdSe
		18.5 Surface Passivation
		References
	Chapter 19: II-VI Wide-Bandgap Semiconductor Device Technology: Post-Deposition Treatments
		19.1 Introduction
		19.2 Thermal Treatments
		19.3 CdCl2 Treatment
		19.4 Post-Deposition Treatment with Alkalis
		19.5 Chemical Etching
		19.6 Laser Treatment
		References
Index