Extreme-Temperature and Harsh-Environment Electronics : Physics, technology and applications

PRELIMS.pdf
	Preface to the revised edition
	Preface to first edition
	Acknowledgements
	About this book
	Author biography
		Vinod Kumar Khanna
			Introduction
			Academic qualifications
			Work experience and accomplishments
			Semiconductor facility creation and maintenance
			Scientific positions held
			Membership of professional societies
			Foreign travel
			Scholarships and awards
			Research publications and books
	Abbreviations, acronyms, chemical symbols and mathematical notation
	Roman alphabet symbols
	Greek/other symbols
CH001.pdf
	Chapter 1 Introduction and overview
		1.1 Reasons for moving away from normal practices in electronics
		1.2 Organization of the book
		1.3 Temperature effects
			1.3.1 Silicon-based electronics
			1.3.2 Wide bandgap semiconductors
			1.3.3 Passive components and packaging
			1.3.4 Superconductivity
		1.4 Harsh environment effects
			1.4.1 Humidity and corrosion effects
			1.4.2 Radiation effects
			1.4.3 Vibration and mechanical shock effects
			1.4.4 Electronics in electromagnetic interference environments
			1.4.5 Sensors in aggressive environments
			1.4.6 Medical implant electronics
			1.4.7 Space environment electronics
			1.4.8 Jamming attacks prevention, and cyber security
		1.5 Discussion and conclusions
			Safeguarding electronics
		Review exercises
		References
CH002.pdf
	Chapter 2 Operating electronics beyond conventional limits
		2.1 Life-threatening temperature imbalances on Earth and other planets
		2.2 Temperature disproportions for electronics
		2.3 High-temperature electronics
			2.3.1 The automotive industry
			2.3.2 The aerospace industry
			2.3.3 Space missions
			2.3.4 Oil well logging equipment
			2.3.5 Industrial and medical systems
		2.4 Low-temperature electronics
		2.5 The scope of extreme-temperature and harsh-environment electronics
			2.5.1 High-temperature operation: a serious vulnerability
			2.5.2 Upgradation/degradation of performance by cooling
			2.5.3 Corrosion: humidity and climatic effects
			2.5.4 Deleterious effects of nuclear and electromagnetic radiations on electronic systems
			2.5.5 Vibration and shock effects
			2.5.6 Special environments
		2.6 Discussion and conclusions
		Review exercises
		References
CH003.pdf
	Chapter 3 Temperature effects on semiconductors
		3.1 Introduction
		3.2 The energy bandgap
		3.3 Intrinsic carrier concentration
		3.4 Carrier saturation velocity
		3.5 Electrical conductivity of semiconductors
		3.6 Free carrier concentration in semiconductors
		3.7 Incomplete ionization and carrier freeze-out
		3.8 Different ionization regimes
			3.8.1 At temperatures T < 100 K: carrier freeze-out or incomplete ionization regime
			3.8.2 At temperatures T ∼ 100 K, and within 100 K < T < 500 K: extrinsic or saturation regime
			3.8.3 At temperatures T > 500 K: intrinsic regime
			3.8.4 Proportionality to bandgap at T ⩾ 400 K
		3.9 Mobilities of charge carriers in semiconductors
			3.9.1 Scattering by lattice waves
			3.9.2 Scattering by ionized impurities
			3.9.3 Mobility in uncompensated and compensated semiconductors
			3.9.4 Resultant mobility
		3.10 Equations for mobility variation with temperature
			3.10.1 Arora–Hauser–Roulston equation
			3.10.2 Klaassen equations
			3.10.3 MINIMOS mobility model
		3.11 Mobility in MOSFET inversion layers at low temperatures
		3.12 Carrier lifetime
		3.13 Wider bandgap semiconductors than silicon
			3.13.1 Gallium arsenide
			3.13.2 Silicon carbide
			3.13.3 Gallium nitride
			3.13.4 Diamond
		3.14 Discussion and conclusions
		Review exercises
		References
CH004.pdf
	Chapter 4 Temperature dependence of the electrical characteristics of silicon bipolar devices and circuits
		4.1 Properties of silicon
		4.2 Intrinsic temperature of silicon
		4.3 Recapitulating single-crystal silicon wafer technology
			4.3.1 Electronic grade polysilicon production
			4.3.2 Single-crystal growth
			4.3.3 Photolithography
			4.3.4 Thermal oxidation of silicon
			4.3.5 n-Type doping of silicon by thermal diffusion
			4.3.6 p-Type doping of silicon by thermal diffusion
			4.3.7 Impurity doping by ion implantation
			4.3.8 Low-pressure chemical vapor deposition
			4.3.9 Plasma-enhanced chemical vapor deposition
			4.3.10 Atomic layer deposition
			4.3.11 Ohmic (non-rectifying) contacts to Si
			4.3.12 Schottky contacts to Si
			4.3.13 p–n Junction and dielectric isolation in silicon integrated circuits
		4.4 Examining temperature effects on bipolar devices
			4.4.1 The Shockley equation for the current–voltage characteristics of a p–n junction diode
			4.4.2 Forward voltage drop across a p–n junction diode
			4.4.3 Forward voltage of a Schottky diode
			4.4.4 Reverse leakage current of a p–n junction diode
			4.4.5 Avalanche breakdown voltage of a p–n junction diode
			4.4.6 Analytical model of temperature coefficient of avalanche breakdown voltage
			4.4.7 Zener breakdown voltage of a diode
			4.4.8 Storage time (ts) of a p+–n junction diode
			4.4.9 Current gain of a bipolar junction transistor
			4.4.10 Approximate analysis
			4.4.11 Saturation voltage of a bipolar junction transistor
			4.4.12 Reverse base and emitter currents of a bipolar junction transistor (ICBO and ICEO)
			4.4.13 Dynamic response of a bipolar transistor
		4.5 Bipolar analog circuits in the 25 °C–300 °C range
		4.6 Bipolar digital circuits in the 25 °C–340 °C range
		4.7 Discussion and conclusions
		Review exercises
		References
CH005.pdf
	Chapter 5 Temperature dependence of electrical characteristics of silicon MOS devices and circuits
		5.1 Introduction
		5.2 Threshold voltage of an n-channel enhancement-mode MOSFET
		5.3 On-resistance (RDS(ON)) of a double-diffused vertical MOSFET
		5.4 Transconductance (gm) of a MOSFET
		5.5 BVDSS and IDSS of a MOSFET
		5.6 Zero temperature coefficient biasing point of MOSFET
		5.7 Dynamic response of a MOSFET
		5.8 MOS analog circuits in the 25 °C to 300 °C range
		5.9 Digital CMOS circuits in −196 °C to 270 °C range
		5.10 Discussion and conclusions
		Review exercises
		References
CH006.pdf
	Chapter 6 The influence of temperature on the performance of silicon–germanium heterojunction bipolar transistors
		6.1 Introduction
		6.2 HBT fabrication
		6.3 Current gain and forward transit time of Si/Si1−xGex HBT
		6.4 Comparison between Si BJT and Si/SiGe HBT
		6.5 Discussion and conclusions
		Review exercises
		References
CH007.pdf
	Chapter 7 The temperature-sustaining capability of gallium arsenide electronics
		7.1 Introduction
		7.2 The intrinsic temperature of GaAs
		7.3 Growth of single-crystal gallium arsenide
		7.4 Doping of GaAs
		7.5 Ohmic contacts to GaAs
			7.5.1 Au–Ge/Ni/Ti contact to n-type GaAs for room temperature operation
			7.5.2 High-temperature ohmic contacts to n-type GaAs
		7.6 Schottky contacts to GaAs
		7.7 Commercial GaAs device evaluation in the 25 °C–400 °C temperature range
		7.8 Structural innovations for restricting the leakage current of GaAs MESFET up to 300 °C
		7.9 Won et al threshold voltage model for a GaAs MESFET
		7.10 The high-temperature electronic technique for enhancing the performance of MESFETs up to 300 °C
		7.11 The operation of GaAs complementary heterojunction FETs from 25 °C to 500 °C
		7.12 GaAs bipolar transistor operation up to 400 °C
		7.13 A GaAs-based HBT for applications up to 350 °C
		7.14 AlxGaAs1−x/GaAs HBT
		7.15 GaAs x-ray and beta particle detectors
		7.16 Discussion and conclusions
		Review exercises
		References
CH008.pdf
	Chapter 8 Silicon carbide electronics for hot environments
		8.1 Impact of silicon carbide devices on power electronics and its superiority over silicon
		8.2 Intrinsic temperature of silicon carbide
		8.3 Silicon carbide single-crystal growth
		8.4 Doping of silicon carbide
		8.5 Surface oxidation of silicon dioxide
		8.6 Schottky and ohmic contacts to silicon carbide
		8.7 SiC p–n diodes
			8.7.1 SiC diode testing up to 498 K
			8.7.2 SiC diode testing up to 873 K
			8.7.3 Operation of SiC integrated bridge rectifier up to 773 K
		8.8 SiC Schottky barrier diodes
			8.8.1 Temperature effects on Si and SiC Schottky diodes
			8.8.2 Schottky diode testing up to 623 K
			8.8.3 Schottky diode testing up to 523 K
		8.9 SiC JFETs
			8.9.1 Characterization of SiC JFETs from 25 °C to 450 °C
			8.9.2 500 °C operational test of 6H-SiC JFETs and ICs
			8.9.3 6H-SiC JFET-based logic circuits for the 25 °C–550 °C range
			8.9.4 Long operational lifetime (10 000 h), 500 °C, 6H-SiC analog and digital ICs
			8.9.5 Characterization of 6H-SiC JFETs and differential amplifiers up to 450 °C
		8.10 SiC bipolar junction transistors
			8.10.1 Characterization of SiC BJTs from 140 K to 460 K
			8.10.2 Performance assessment of SiC BJT from −86 °C to 550 °C
		8.11 SiC MOSFETs
		8.12 SiC sensors
			8.12.1 Flexible 3C-SiC temperature sensors working up to 450 °C
			8.12.2 4H-SiC gas sensors operating up to 500 °C
			8.12.3 3C-SiC MEMS pressure sensor working at 500 °C
		8.13 Discussion and conclusions
		Review exercises
		References
CH009.pdf
	Chapter 9 Gallium nitride electronics for very hot environments
		9.1 Introduction
		9.2 Intrinsic temperature of gallium nitride
		9.3 Growth of the GaN epitaxial layer
		9.4 Doping of GaN
		9.5 Ohmic contacts to GaN
			9.5.1 Ohmic contacts to n-type GaN
			9.5.2 Ohmic contacts to p-type GaN
		9.6 Schottky contacts to GaN
		9.7 GaN MESFET model with hyperbolic tangent function
		9.8 AlGaN/GaN HEMTs
			9.8.1 Operation of AlGaN/GaN HEMTs on 4H-SiC/sapphire substrates from 25 °C to 500 °C
			9.8.2 Life testing of AlGaN/GaN HEMTs from 150 °C to 240 °C
			9.8.3 Power characteristics of AlGaN/GaN HEMTs up to 368 °C
			9.8.4 Mechanisms of the failure of high-power AlGaN/GaN HEMTs at high temperatures
		9.9 InAlN/GaN HEMTs
			9.9.1 AlGaN/GaN versus InAlN/GaN HEMTs for high-temperature applications
			9.9.2 InAlN/GaN HEMT behavior up to 1000 °C
			9.9.3 Thermal stability of barrier layer in InAlN/GaN HEMTs up to 1000 °C
			9.9.4 Feasibility demonstration of HEMT operation at gigahertz frequency up to 1000 °C
		9.10 GaN sensors
			9.10.1 GaN piezoelectric pressure sensor working up to 350 °C
			9.10.2 GaN-based Hall-effect magnetic field sensors operating up to 400 °C
		9.11 Discussion and conclusions
		Review exercises
		References
CH010.pdf
	Chapter 10 Diamond electronics for ultra-hot environments
		10.1 Introduction
		10.2 Intrinsic temperature of diamond
		10.3 Synthesis of diamond
		10.4 Doping of diamond
			10.4.1 n-Type doping
			10.4.2 p-Type doping
			10.4.3 p-Doping by hydrogenation termination of the diamond surface
		10.5 A diamond p–n junction diode
		10.6 Diamond Schottky diode
			10.6.1 Diamond Schottky diode operation up to 1000 °C
			10.6.2 Long-term operation of diamond Schottky barrier diodes up to 400 °C
		10.7 Diamond bipolar junction transistor operating at < 200 °C
		10.8 Diamond metal–semiconductor FET
			10.8.1 Hydrogen-terminated diamond metal–semiconductor FETs
			10.8.2 Electrical characteristics of diamond MESFETs in 20 °C–100 °C temperature range
			10.8.3 Hydrogen-terminated diamond MESFETs with a passivation layer
			10.8.4 Operation of pulse or delta boron-doped diamond MESFETs up to 350 °C
			10.8.5 Alternative approach to boron δ-doping profile
		10.9 Diamond JFET
			10.9.1 Diamond JFETs with lateral p–n junctions
			10.9.2 Operation of diamond JEFTs up to 723 K
		10.10 Diamond MISFET
		10.11 Diamond radiation detectors
			10.11.1 Structural configuration
			10.11.2 Radiation detection principles
			10.11.3 Photoconduction and photovoltaic operational modes
			10.11.4 Current and pulse counting modes
			10.11.5 Advantages
		10.12 Diamond quantum sensors
			10.12.1 N-V center in diamond
			10.12.2 N-V center creation in bulk diamond
			10.12.3 Applications
		10.13 Discussion and conclusions
		Review exercises
		References
CH011.pdf
	Chapter 11 High-temperature passive components, interconnections and packaging
		11.1 Introduction
		11.2 High-temperature resistors
			11.2.1 Metal foil resistors
			11.2.2 Wire wound resistors
			11.2.3 Thin-film resistors
			11.2.4 Thick-film resistors
			11.2.5 Manganese nitride compound resistors
		11.3 High-temperature capacitors
			11.3.1 Ceramic capacitors
			11.3.2 Solid and wet tantalum capacitors
			11.3.3 Teflon capacitors
		11.4 High-temperature magnetic cores and inductors
			11.4.1 Magnetic cores
			11.4.2 Inductors
		11.5 High-temperature metallization
			11.5.1 Tungsten metallization on silicon
			11.5.2 Tungsten: nickel metallization on nitrogen-doped homoepitaxial layers on p-type 4H- and 6H-SiC substrates
			11.5.3 Nickel metallization on n-type 4H-SiC and Ni/Ti/Al metallization on p-type 4H-SiC
			11.5.4 A thick-film Au interconnection system on alumina and aluminum nitride ceramic substrates
		11.6 High-temperature packaging
			11.6.1 Substrates
			11.6.2 Die-attach materials
			11.6.3 Wire bonding
			11.6.4 Hermetic packaging
			11.6.5 Joining the two parts of hermetic packages
		11.7 Discussion and conclusions
		Review exercises
		References
CH012.pdf
	Chapter 12 Superconductive electronics for ultra-cool environments
		12.1 Introduction
		12.2 Superconductivity basics
			12.2.1 Low-temperature superconductors
			12.2.2 Meissner effect
			12.2.3 Critical magnetic field (HC) and critical current density (JC)
			12.2.4 Superconductor classification: type I and type II
			12.2.5 The BCS theory of superconductivity
			12.2.6 Ginzburg–Landau theory
			12.2.7 London equations
			12.2.8 Explanation of Meissner’s effect from London equations
			12.2.9 Practical applications
			12.2.10 High-temperature superconductor
		12.3 Josephson junction
			12.3.1 The DC Josephson effect
			12.3.2 The AC Josephson effect
			12.3.3 Theory
			12.3.4 Gauge-invariant phase difference
		12.4 Inverse AC Josephson effect: Shapiro steps
		12.5 Superconducting quantum interference devices
			12.5.1 DC SQUID
			12.5.2 The AC or RF SQUID
		12.6 Rapid single flux quantum logic
			12.6.1 Difference from traditional logic
			12.6.2 Generation of RSFQ voltage pulses
			12.6.3 RSFQ building blocks
			12.6.4 RSFQ reset–set flip-flop
			12.6.5 RSFQ NOT gate or inverter
			12.6.6 RSFQ OR gate
			12.6.7 Advantages of RSFQ logic
			12.6.8 Disadvantages of RSFQ logic
		12.7 Discussion and conclusions
		Review exercises
		References
CH013.pdf
	Chapter 13 Superconductor-based microwave circuits operating at liquid-nitrogen temperatures
		13.1 Introduction
		13.2 Substrates for microwave circuits
		13.3 HTS thin-film materials
			13.3.1 Yttrium barium copper oxide
			13.3.2 Thallium barium calcium copper oxide
		13.4 Fabrication processes for HTS microwave circuits
		13.5 Design and tuning approaches for HTS filters
		13.6 Cryogenic packaging
		13.7 HTS bandpass filters for mobile telecommunications
			13.7.1 Filter design methodology
			13.7.2 Filter fabrication and characterization
		13.8 HTS JJ-based frequency down-converter
		13.9 Discussion and conclusions
		Review exercises
		References
CH014.pdf
	Chapter 14 High-temperature superconductor-based power delivery
		14.1 Introduction
		14.2 Conventional electrical power transmission
			14.2.1 Transmission materials
			14.2.2 High-voltage transmission
			14.2.3 Overhead versus underground power delivery
		14.3 HTS wires
			14.3.1 First generation (1G) HTS wire
			14.3.2 Second-generation (2G) HTS wire
		14.4 HTS cable designs
			14.4.1 Single-phase warm dielectric HTS cable
			14.4.2 Single-phase cool dielectric HTS cable
			14.4.3 Flow rate, pressure drop and HTS cable temperatures
			14.4.4 Three-phase cold dielectric HTS cable
		14.5 HTS fault current limiters
			14.5.1 Resistive SFCL
			14.5.2 Shielded-core SFCL
			14.5.3 Saturable-core SFCL
		14.6 HTS transformers
		14.7 Discussion and conclusions
		Review exercises
		References
CH015.pdf
	Chapter 15 Humidity and contamination effects on electronics
		15.1 Introduction
		15.2 Absolute and relative humidity
		15.3 Relation between humidity, contamination and corrosion
		15.4 Metals and alloys used in electronics
		15.5 Humidity-triggered corrosion mechanisms
			15.5.1 Electrochemical corrosion
			15.5.2 Anodic corrosion
			15.5.3 Galvanic corrosion
			15.5.4 Cathodic corrosion
			15.5.5 Creep corrosion
			15.5.6 Stray current corrosion
			15.5.7 The pop-corning effect
		15.6 Discussion and conclusions
		Review exercises
		References
CH016.pdf
	Chapter 16 Moisture and waterproof electronics
		16.1 Introduction
		16.2 Corrosion prevention by design
			16.2.1 The fault-tolerant design approach
			16.2.2 Air–gas contact minimization
			16.2.3 The tight dry encasing design
			16.2.4 A judicious choice of materials for boundary surfaces
		16.3 Parylene coatings
			16.3.1 Parylene and its advantages
			16.3.2 Types of parylene
			16.3.3 The vapor deposition polymerization process for parylene coatings
			16.3.4 Typical electrical properties
			16.3.5 Applications for corrosion prevention
		16.4 Superhydrophobic coatings
			16.4.1 Concept of superhydrophobicity
			16.4.2 Standard deposition techniques versus plasma processes
			16.4.3 The main technologies
			16.4.4 Applications
		16.5 Volatile corrosion inhibitor coatings
		16.6 Silicones
		16.7 Discussion and conclusions
		Review exercises
		References
CH017.pdf
	Chapter 17 Preventing chemical corrosion in electronics
		17.1 Introduction
		17.2 Sulfidic and oxidation corrosion from environmental gases
		17.3 Electrolytic ion migration and galvanic coupling
		17.4 Internal corrosion of integrated and printed circuit board circuits
		17.5 Fretting corrosion
		17.6 Tin whisker growth
		17.7 Minimizing corrosion risks
			17.7.1 Using non-corrosive chemicals in device application and assembly
			17.7.2 Device protection with conformal coatings
		17.8 Further protection methods
			17.8.1 Potting or overmolding with a plastic
			17.8.2 Porosity sealing or vacuum impregnation
		17.9 Hermetic packaging
			17.9.1 Multilayer ceramic packages
			17.9.2 Pressed ceramic packages
			17.9.3 Metal can packages
		17.10 Hermetic glass passivation of discrete high-voltage diodes, transistors and thyristors
		17.11 Discussion and conclusions
		Review exercises
		References
CH018.pdf
	Chapter 18 Radiation effects on electronics
		18.1 Introduction
		18.2 Sources of radiation
			18.2.1 Natural radiation sources
			18.2.2 Man-made or artificial radiation sources
		18.3 Types of radiation effects
			18.3.1 Total ionizing dose (TID) effect
			18.3.2 Single-event effect
			18.3.3 Dose-rate effect
		18.4 Total dose effects
			18.4.1 Gamma-ray effects
			18.4.2 Neutron effects
		18.5 Single-event effects
			18.5.1 Non-destructive SEEs
			18.5.2 Destructive SSEs
		18.6 Discussion and conclusions
		Review exercises
		References
CH019.pdf
	Chapter 19 Radiation-hardened electronics
		19.1 The meaning of ‘radiation hardening’
		19.2 Radiation hardening by process (RHBP)
			19.2.1 Reduction of space charge formation in silicon dioxide layers
			19.2.2 Impurity profile tailoring and carrier lifetime control
			19.2.3 Triple-well CMOS technology
			19.2.4 Adoption of silicon-on-insulator technology
		19.3 Radiation hardening by design
			19.3.1 Edgeless or annular MOSFETs
			19.3.2 Channel stoppers and guard rings
			19.3.3 Controlling the charge dissipation by increasing the channel width to the channel length ratio
			19.3.4 Temporal filtering
			19.3.5 Spatial redundancy
			19.3.6 Temporal redundancy
			19.3.7 Dual interlocked storage cell
		19.4 Discussion and conclusions
		Review exercises
		References
CH020.pdf
	Chapter 20 Vibration-tolerant electronics
		20.1 Vibration is omnipresent
		20.2 Random and sinusoidal vibrations
		20.3 Countering vibration effects
		20.4 Passive and active vibration isolators
		20.5 Theory of passive vibration isolation
			20.5.1 Case I: free undamped vibrations
			20.5.2 Case II: forced undamped vibrations
			20.5.3 Case III: forced vibrations with viscous damping
		20.6 Mechanical spring vibration isolators
		20.7 Air-spring vibration isolators
		20.8 Wire-rope isolators
		20.9 Elastomeric isolators
		20.10 Negative stiffness isolators
		20.11 Active vibration isolators
			20.11.1 Working
			20.11.2 Advantages
			20.11.3 Applications
		20.12 Discussion and conclusions
		Review exercises
		References
CH021.pdf
	Chapter 21 Making electronics compatible with electromagnetic interference environments
		21.1 Electromagnetic interference
		21.2 Electromagnetic compatibility
		21.3 Classification of EMI
			21.3.1 Sources of EMI
			21.3.2 EMI production mechanisms
			21.3.3 Duration of EMI
			21.3.4 Bandwidth of EMI
		21.4 Effects of EMI
			21.4.1 EMI noise signal
			21.4.2 Examples of disablement of equipment functions by EMI
		21.5 Single-ended and differential transmission of signals
			21.5.1 Single-ended transmission of signals
			21.5.2 Differential transmission of signals
			21.5.3 Effects of EMI currents induced in the wires by magnetic fields generated around them during high-frequency differential current flow
		21.6 Differential- and common-mode voltages
		21.7 Differential-mode interference
			21.7.1 Cause of differential-mode interference
			21.7.2 Differential-mode noise voltage
			21.7.3 Differential-mode noise current
		21.8 Common-mode interference
			21.8.1 Cause of common-mode interference
			21.8.2 Common-mode interference noise voltage
			21.8.3 Common-mode interference noise current
		21.9 Twisted pair cable for common-mode EMI noise rejection
			21.9.1 The twisted wires
			21.9.2 Magnetic fields and induced currents
			21.9.3 Induced current cancellation
			21.9.4 Untwisted wires
			21.9.5 Subdual of EMI in twisted wires from self and external EMI
			21.9.6 Explanation of distance effect on noise creation in untwisted and twisted wires with assumed noise potentials per unit length
			21.9.7 EMI not stopped, only weakened
			21.9.8 Applications of twisted wire cables
		21.10 Common-mode interference from common impedance coupling
		21.11 Combined EMI noise
		21.12 Filters for EMI noise suppression
			21.12.1 Differential-mode EMI noise filter
			21.12.2 Common-mode EMI noise filter
		21.13 Grounding
			21.13.1 Ground loops, and a simplified ground loop circuit
			21.13.2 Induction of interference currents by stray magnetic fields
		21.14 Grounding approaches
			21.14.1 Single-point grounding
			21.14.2 Multi-point grounding
			21.14.3 Hybrid grounding
			21.14.4 Comparison of single-point, multi-point and hybrid grounding approaches
		21.15 EMI shielding
			21.15.1 Shielding efficiency
			21.15.2 Shielding materials
			21.15.3 The Faraday cage
			21.15.4 Board level shielding (BLS) for PCBs
			21.15.5 Unshielded and shielded twisted pair cables
			21.15.6 Types of shielded twisted pair cables
		21.16 Grounding of shielded cables
			21.16.1 Electrical shielding
			21.16.2 Magnetic shielding
			21.16.3 Considerations for a shielded cable grounded at both ends
		21.17 Discussion and conclusions
		Review exercises
		References
CH022.pdf
	Chapter 22 Developing sensor capabilities for aggressive environments
		22.1 Disorganized scenario in a harsh environment, and denial of accessibility to the sensor
		22.2 High-temperature sensors
		22.3 Need of tightly monitoring energy systems aggravates burden on sensors
		22.4 Accelerometers
			22.4.1 All 4H-SiC MEMS piezoresistive accelerometer
			22.4.2 Piezoelectric YCa4O(BO3)3 (YCOB) single-crystal-based accelerometer
			22.4.3 Optical accelerometer
		22.5 Flow sensors
			22.5.1 3C-SiC on-glass-based thermal flow sensor
			22.5.2 Fiber optic flow sensor
		22.6 Pressure sensors
			22.6.1 Silicon carbide capacitive pressure sensor
			22.6.2 Micromachined pressure sensor with sapphire membrane and platinum thin film strain gauges
			22.6.3 Ceramic nanofiber-based flexible pressure sensor
			22.6.4 All SiC fiber optic pressure sensor
		22.7 Temperature sensors
			22.7.1 SOI diode temperature sensor
			22.7.2 LTCC wireless temperature sensor
			22.7.3 Langasite SAW resonator-based high temperature sensor
			22.7.4 Sapphire fiber Bragg grating as temperature sensor
		22.8 Humidity sensors
			22.8.1 Micromachined humidity sensor
			22.8.2 Optical humidity sensor based on hydrogel thin film expansion
		22.9 Gas sensors
			22.9.1 TiO2–ZrO2 oxygen lambda sensors
			22.9.2 Mixed potential CO sensor
			22.9.3 SiC FET sensor for NO, NH3, O2, CO, and SO2
		22.10 Discussions and conclusions
		Review exercises
		References
CH023.pdf
	Chapter 23 Adapting medical implant electronics to human biological environments
		23.1 Environment inside the human body
			23.1.1 Water in the body
			23.1.2 Electrolytes in the body
		23.2 Essential properties of packaging materials for reliable functioning of implanted medical electronic devices
			23.2.1 Hermeticity
			23.2.2 Biocompatibility
			23.2.3 Mechanical flexibility
			23.2.4 Weight
			23.2.5 Internal outgassing
			23.2.6 Radio frequency transparency
			23.2.7 Heat generation minimization
			23.2.8 Thermal expansion coefficients matching
			23.2.9 Ease of processing
			23.2.10 Other properties
		23.3 Studying biological response vis-à-vis material properties
		23.4 Foreign body reaction to implanted biomaterials
			23.4.1 Post implantation acute and chronic inflammation phases
			23.4.2 Stages of inflammatory response
		23.5 Biomaterials for implants
			23.5.1 Metals
			23.5.2 Ceramics
			23.5.3 Polymers
			23.5.4 Composites
		23.6 Metallic biomaterials
			23.6.1 Titanium (Ti) and its alloys
			23.6.2 Cobalt–chromium alloys
			23.6.3 Stainless steels
		23.7 Ceramic biomaterials
			23.7.1 Classes of ceramics
			23.7.2 Processing of ceramics
			23.7.3 Making hermetic ceramic feedthroughs by conventional brazing
			23.7.4 Making ceramic feedthroughs using extruded metal vias
		23.8 Polymeric biomaterials
			23.8.1 PDMS (polydimethylsiloxane)
			23.8.2 Polyimide
			23.8.3 PVDF (polyvinylidene fluoride)
			23.8.4 Parylene-C
			23.8.5 Liquid crystal polymers (LCPs)
			23.8.6 Thermoplastic polyurethane (TPU)
		23.9 Composite biomaterials
			23.9.1 Metal matrix composites
			23.9.2 Ceramic matrix composites
			23.9.3 Polymer matrix composites
		23.10 Implantable microelectrode arrays for neuroprosthetics
		23.11 Optrode array with integrated LEDs
			23.11.1 Applications of the array
			23.11.2 Working of the array
			23.11.3 Fabrication of the array
		23.12 Operation of an implanted electronics device enclosed in a soft polymer covering
		23.13 Anti-foreign body reaction (FBR) techniques for domestication/mitigation of FBR to implants
			23.13.1 Optimization of size, shape and texture of the implant
			23.13.2 Drug co-delivery
			23.13.3 Using bioresorbable materials for building implants
			23.13.4 Using zwitterionic materials
		23.14 Sensors working in biological environments
			23.14.1 Sensors which can work by indirect interaction through shielding films
			23.14.2 Sensors in which direct interaction of sensor surface with body fluids is needed
		23.15 Discussion and conclusions
		Review exercises
		References
CH024.pdf
	Chapter 24 Meeting the challenges faced by electronics in unfavorable space environments
		24.1 The challenge of vibrations and shocks
			24.1.1 Sources of vibrations in space vehicles
			24.1.2 Effects of vibrations on onboard electronic printed-circuit board assemblies (PCBAs)
			24.1.3 Protection of PCB from vibration
			24.1.4 Dampening and isolation of vibrations
		24.2 The challenge of temperature excursions beyond safe limits
			24.2.1 Need of thermal control on space vehicles
			24.2.2 Passive thermal control
			24.2.3 Active thermal control
		24.3 The challenge of electrical charging of spacecraft
			24.3.1 Surface charging
			24.3.2 Internal charging (deep dielectric charging or bulk charging or buried charging)
		24.4 The challenge of tin whisker growth
			24.4.1 Tin whiskers
			24.4.2 Risks to electronic circuits
			24.4.3 Theories of whisker growth
			24.4.4 Methods to reduce whisker growth
		24.5 The challenge of erosion of spacecraft materials by atomic oxygen
			24.5.1 Crippling effects of atomic oxygen on space missions
			24.5.2 Erosion yield
			24.5.3 AO effects on metals
			24.5.4 AO effects on polymers
			24.5.5 Protection of polymers
			24.5.6 AO effects on glasses and thermal coatings
		24.6 The challenge of radiation showers
			24.6.1 Inapplicability of common shielding practices to electronics in space
			24.6.2 Gamma ray shielding materials
			24.6.3 Neutron radiation shielding materials
			24.6.4 Adapting conformal coatings for shielding electronics in space
		24.7 The challenge of outgassing in vacuum environment of space
			24.7.1 Outgassing sources and mechanisms
			24.7.2 Effects of outgassing
			24.7.3 Lowering of space vacuum by outgassing, and hampering of high-voltage operations
			24.7.4 Alleviation of outgassing contamination
		24.8 Discussion and conclusions
		Review exercises
		References
CH025.pdf
	Chapter 25 Electronics jamming counteraction and cybersecurity assurance in adversary environments
		25.1 A jamming attack
		25.2 Types of jamming and jammers
			25.2.1 Classification by type of jamming signal used
			25.2.2 Classification by characteristic features of jammers
		25.3 Detection of jamming attacks
			25.3.1 From signal strength
			25.3.2 From carrier sensing time
			25.3.3 From packet delivery ratio (PDR)
		25.4 Mapping out jammed area and planning the defense strategy against jamming
		25.5 Approaches to overcome jamming
			25.5.1 Retreating away from the jammer
			25.5.2 Resource adjustment to actively compete with the jammer
			25.5.3 Adopting jamming-resistant communication techniques
		25.6 Retreating methods
			25.6.1 Spatial retreat
			25.6.2 Channel surfing
		25.7 Competition method: regulation of transmitted power and error correcting code
		25.8 Jamming-resistant spread-spectrum communication systems
			25.8.1 Frequency-hopping spread spectrum (FHSS)
			25.8.2 Direct sequence spread spectrum (DSSS)
			25.8.3 Hybrid FHSS/DSSS
		25.9 Ethical hacking
			25.9.1 The white hat hacker
			25.9.2 Phases of ethical hacking
		25.10 Malware (malicious software)
			25.10.1 Virus
			25.10.2 Worm
			25.10.3 Trojan horse
			25.10.4 Wiper
			25.10.5 Spyware
			25.10.6 Ransomware
			25.10.7 Rogue security software
			25.10.8 Scareware
			25.10.9 Crypto jacker
			25.10.10 Keylogger
			25.10.11 Rootkit
			25.10.12 Fileless malware
		25.11 Hacking threats and attacks
			25.11.1 Advanced persistent threat (APT)
			25.11.2 Arbitrary code execution (ACE)
			25.11.3 Backdoor attack
			25.11.4 Code injection and cross-site scripting (XSS)
			25.11.5 Drive-by-download and data breach
			25.11.6 Denial-of-service (DoS) attack
			25.11.7 Eavesdropping
			25.11.8 Email spoofing
			25.11.9 Exploit
			25.11.10 Malvertising
			25.11.11 Social engineering
			25.11.12 Phishing
			25.11.13 Privilege escalation
			25.11.14 Spamming
			25.11.15 Zombie attacks
			25.11.16 Botnet attacks
		25.12 Defences against hacking
			25.12.1 Access control software
			25.12.2 Anti-keylogger
			25.12.3 Anti-malware
			25.12.4 Anti-spyware software
			25.12.5 Anti-subversion software
			25.12.6 Anti-tampering software
			25.12.7 Anti-theft system
			25.12.8 Cryptographic/encryption software
			25.12.9 Firewall
			25.12.10 Intrusion detection system/intrusion prevention system (IDS/IPS)
			25.12.11 Sandbox
			25.12.12 Security information and event management (SIEM)
			25.12.13 Software patch
			25.12.14 Vulnerability management software
			25.12.15 Packet sniffer
			25.12.16 Public key infrastructure services
			25.12.17 Managed detection and response (MDR) services
			25.12.18 Vulnerability assessment and penetration testing (VAPT) tools
		25.13 Discussion and conclusions
		Review exercises
		References