Electronic Conduction: Classical and Quantum Theory to Nanoelectronic Devices (Textbook Series in Physical Sciences)

Cover
Half Title
Series Page
Title Page
Copyright Page
Dedication
Contents
Preface
About the Author
PART I: Prerequisites: Quantum Mechanics and the Electronic States in Solids
	CHAPTER 1: Quantum Mechanics
		1.1. THE TWO-SLIT EXPERIMENT
		1.2. THE SCHROEDINGER EQUATION, WAVEFUNCTIONS AND OPERATORS
		1.3. PARTICLE IN A RECTANGULAR BOX
		1.4. MORE QUANTUM MECHANICS, HEISENBERG’S UNCERTAINTY PRINCIPLE
		1.5. STATISTICS OF ELECTRON OCCUPANCY, THE PAULI PRINCIPLE AND THE FERMI – DIRAC DISTRIBUTION
		1.6. THE HYDROGEN ATOM AND THE ATOMS OF THE PERIODIC TABLE
		1.7. BARRIER PENETRATION, TUNNELLING
		1.8. PROBABILITY CURRENT DENSITY AND THE WKB APPROXIMATION
	CHAPTER 2: Electron States in Solids
		2.1. QUALITATIVE DESCRIPTION OF SOLIDS AND THEIR ENERGY BANDS
		2.2. THE k-SPACE, BLOCH’S THEOREM AND BRILLOUIN ZONES
		2.3. THE LCAO METHOD OF CALCULATING ENERGY LEVELS
		2.4. QUICK REVISION OF THE CONCEPT OF A HOLE AND DOPING
		2.5. VELOCITY OF ELECTRONS IN SOLIDS
		2.6. THE CONCEPT OF EFFECTIVE MASS
		2.7. CONCENTRATION OF CARRIERS IN SEMICONDUCTORS AND METALS
		2.8. THE EFFECTIVE MASS EQUATION
PART II: Theory of Conduction
	CHAPTER 3: Simple Classical Theory 
of Conduction
		3.1. EXTERNAL VOLTAGES AND FERMI LEVELS
		3.2. COLLISIONS AND DRIFT MOBILITY
		3.3. MECHANISMS OF SCATTERING
		3.4. RECOMBINATION OF CARRIERS
		3.5. DIFFUSION CURRENT
		3.6. CONTINUITY EQUATIONS
		3.7. THE IDEAL PN JUNCTION AT EQUILIBRIUM
		3.8. THE IDEAL PN JUNCTION UNDER BIAS
		3.9. THE NON-IDEAL, REAL PN JUNCTION
		3.10. THE METAL–SEMICONDUCTOR OR SCHOTTKY JUNCTION
	CHAPTER 4: Advanced Classical Theory of Conduction
		4.1. THE NEED FOR A BETTER CLASSICAL THEORY OF CONDUCTION
		4.2. THE BOLTZMANN EQUATION
		4.3. SOLUTION OF THE BOLTZMANN EQUATION BY THE RELAXATION TIME APPROXIMATION
		4.4. APPLICATION OF AN ELECTRIC FIELD–CONDUCTIVITY OF SOLIDS
		4.5. DIFFUSION CURRENTS
		4.6. GENERAL EXPRESSION FOR THE CURRENT DENSITY
		4.7. APPLICATION OF A THERMAL GRADIENT, THE SEEBECK EFFECT
		4.8. SATURATION OF DRIFT VELOCITY
		4.9. GUNN EFFECT AND VELOCITY OVERSHOOT
		4.10. THE (CLASSICAL) HALL EFFECT
	CHAPTER 5: The Quantum Theory of Conduction
		5.1. CRITIQUE OF THE BOLTZMANN EQUATION, REGIMES OF CONDUCTION
		5.2. ELECTRONIC STRUCTURE OF LOW-DIMENSIONAL SYSTEMS
		5.3. THE LANDAUER FORMALISM
		5.4. THE EFFECTIVE MASS EQUATION FOR HETEROSTRUCTURES
		5.5. TRANSMISSION MATRICES, AIRY FUNCTIONS
		5.6. THE RESONANT TUNNELLING DIODE OR RTD
PART III: Devices
	CHAPTER 6: Field Emission and Vacuum Devices
		6.1. INTRODUCTION
		6.2. THE 1-DIMENSIONAL WKB EQUATION
		6.3. FIELD EMISSION FROM PLANAR SURFACES
		6.4. THE 3-DIMENSIONAL WKB PROBLEM
		6.5. FIELD EMISSION FROM CURVED SURFACES (ELECTRON GUNS)
		6.6. THE VACUUM TRANSISTOR
	CHAPTER 7: The MOSFET
		7.1. INTRODUCTION
		7.2. PRINCIPLE OF OPERATION OF THE MOSFET
		7.3. SIMPLE CLASSICAL THEORY
		7.4. ADVANCED CLASSICAL THEORY
		7.5. QUANTUM THEORY OF THE MOSFET
		7.6. TIME-DEPENDENT PERFORMANCE AND MOORE’S LAW
		7.7. THE FINFET, A 3-DIMENSIONAL MOSFET
	CHAPTER 8: Post-Si FETs
		8.1. INTRODUCTION
		8.2. SIMPLE THEORY OF THE HEMT
		8.3. ADVANCED THEORY OF THE HEMT
		8.4. THE III–V MOSFET
		8.5. THE CARBON NANOTUBE FET, CNFET, OR CNTFET
APPENDIX A: Further Development of Quantum Mechanics, Angular Momentum, and Spin of the Electron
APPENDIX B: Lattice Vibrations
APPENDIX C: Impurity States in Semiconductors
APPENDIX D: Direct and Indirect Band-Gap and Optical Transitions
APPENDIX E: Proof of the Field Emission Formula
BIBLIOGRAPHY
INDEX