Doping in III-V Semiconductors

Cover......Page 1
Frontmatter......Page 2
Contents......Page 10
Foreword......Page 12
Preface......Page 16
List of symbols......Page 19
Introduction......Page 24
1.1 Hydrogenic impurities......Page 29
1.2 Screening of impurity potentials......Page 50
1.3 High doping effects......Page 57
2 - Phenomenology of deep levels......Page 77
2.1 General characteristics......Page 78
2.2 Capture, emission, and recombination......Page 83
2.3 Effects relating to experimental properties......Page 90
3 - Semiconductor statistics......Page 101
3.1 Density of continuum states......Page 103
3.2 Classical and quantum statistics......Page 117
3.3 Carrier concentrations......Page 141
3.4 Law of mass action......Page 153
4.1 Molecular-beam epitaxy......Page 160
4.2 Gas-source molecular-beam epitaxy......Page 169
4.3 Chemical-beam epitaxy......Page 172
4.4 Organometallic vapor-phase epitaxy......Page 176
4.5 Vapor-phase epitaxy......Page 184
5.1 Doping techniques and calibration......Page 188
5.2 Doping homogeneity and uniformity......Page 200
5.3 Elemental dopants......Page 204
6 - Gaseous doping sources......Page 231
6.1 General considerations......Page 232
6.2 Doping homogeneity and uniformity......Page 236
6.3 Gaseous doping precursors......Page 242
7 - Impurity characteristics......Page 271
7.1 Doping incorporation during growth......Page 272
7.2 Doping incorporation by implantation......Page 285
7.3 Doping incorporation by diffusion......Page 295
7.4 Amphotericity and autocompensation......Page 300
7.5 Maximum doping concentration......Page 313
8 - Redistribution of impurities......Page 329
8.1 Diffusion and brownian motion......Page 330
8.2 Fickian diffusion......Page 334
8.3 Diffusion mechanisms......Page 339
8.4 Some specific impurities......Page 348
8.5 Surface segregations and surface migration......Page 360
8.6 Impurity-induced layer disordering......Page 372
9 - Deep centers......Page 377
9.1 DX-type centers......Page 378
9.2 The EL2 defect......Page 388
9.3 Hydrogen......Page 397
9.4 Chromium, iron, and oxygen......Page 407
9.5 Rare-earth impurities......Page 413
10.1 Selectively doped heterostructures......Page 415
10.2 Doping aspects of selectively doped heterostructures......Page 427
10.3 Doping superlattices......Page 435
10.4 Impurities in quantum wells and quantum barriers......Page 445
11 - Delta doping......Page 456
11.1 Electronic structure......Page 457
11.2 Growth, localization, and redistribution......Page 469
11.3 Transport properties......Page 481
11.4 Electronic devices......Page 486
11.5 Optical devices......Page 494
12.1 Electronic characterization techniques......Page 505
12.2 Optical characterization techniques......Page 531
12.3 Chemical and structural characterization techniques......Page 554
Appendix A - Properties of III--V semiconductors......Page 564
Appendix B - Constants and conversions......Page 568
References......Page 569
Index......Page 623