Crucial Issues in Semiconductor Materials and Processing Technologies

Front Matter....Pages i-xix
Front Matter....Pages 1-1
Defect Aspects of Advanced Device Technologies....Pages 3-25
Field Effect Analysis in Low Voltage Operation a-Si:H Thin Film Transistors with Very Thin Pecvd a-SiO 2 Gate Dielectric....Pages 27-31
Silicon and Silicon:Germanium Alloy Growth; Means and Applications....Pages 33-47
Preparation and Characterization of Silicon Ribbons....Pages 49-53
Rapid Thermal Chemical Vapor Deposition of Si x Ge 1-x Alloys on Si and SiO 2 and New Applications of Si x Ge 1-x Alloys in Advanced Mosfet Processes....Pages 55-59
Kinetics and Dynamics of MBE Growth....Pages 61-77
Effects of Near-Interface Defects on the Optical Properties of MBE Grown GaAs/AlGaAs Layers....Pages 79-82
Optoelectronic Materials....Pages 83-101
Electrical Characteristics of PECVD Silicon Nitride / Compound Semiconductor Interfaces for Optoelectronic Device Passivation....Pages 103-107
Front Matter....Pages 109-109
Fundamentals of Semiconductor Processing....Pages 111-117
Optical Analysis of Oxygen in Epitaxial Silicon....Pages 119-127
Electrical Properties of “Clean” and Fe — Decorated Stacking Faults in P-Type Silicon....Pages 129-133
On the Dirty Contacts on N-Type Silicon....Pages 135-139
Mössbauer Study of the Dx-Center in Te-Implanted Al x Ga 1-x As....Pages 141-145
Surface Science and Semiconductor Processing....Pages 147-152
Lithography for Manufacturing at 0.25 Micrometer and Below....Pages 153-166
Basic Aspects of Ion Implantation....Pages 167-194
Trends in Ion Implantation for Semiconductor and Optical Materials Research....Pages 195-205
Orientation Phenomena in MeV Implants of P IN Si....Pages 207-211
Deep Implants by Means of Channeling: Ion Distribution and Radiation Damage in Angle Controlled N+ Implantation in Silicon....Pages 213-217
Front Matter....Pages 109-109
Dislocation formation in Si implanted at elevated temperature....Pages 219-224
Preparation and Characterisation of Thin Film Simox Material....Pages 225-232
The effect of electronic energy loss on epitaxial YBa 2 Cu 3 O 7 thin films after heavy ion irradiation and annealing up to room temperature....Pages 233-238
Structural Study of the Epitaxial Realignment of Polycrystalline Si Films Onto Si Substrates....Pages 239-244
Plasma Immersion Ion Implantation: A Perspective....Pages 245-249
A Sheet Stress Measurement Technique Using Thin Films to Measure Stresses in Inert-Gas Implanted Silicon....Pages 251-255
Plasma Etching Processes....Pages 257-275
Front Matter....Pages 277-277
Charge Trapping, Degradation and Wearout of Thin Dielectric Layers During Electrical Stressing....Pages 279-297
Minority carrier lifetime measurements after high temperature pre-treatment....Pages 299-304
Copper-Based Metallization....Pages 305-320
Thermal Stability of Titanium-Molybdenum and Titanium-Copper Bilayer Thin Films on Alumina....Pages 321-325
Hyperfine Fields in Epitaxially Grown Co on Gaas....Pages 327-330
Titanium Nitride Process Development....Pages 331-335
Materials aspects and implementation of silicides for ULSI....Pages 337-361
Ion Beam Synthesis of Buried Iron Disilicide....Pages 363-368
Diffusion in Cobalt Silicide During Silicide Formation....Pages 369-374
Formation of Germanides by Rapid Thermal Annealing and their Applications in Advanced Mosfet Processes....Pages 375-380
Front Matter....Pages 381-381
Diffusion in Crystalline Silicon and Germanium — the State-of-the-Art in Brief....Pages 383-402
Symmetry Methods in Diffusion....Pages 403-407
Diffusion of Gold in Sputtered Amorphous Silicon....Pages 409-413
Front Matter....Pages 381-381
Dopant Diffusion and Point Defects in Silicon During Silicidation....Pages 415-419
Lateral Diffusion Couples and Their Contribution to Understanding Thin Film Reactions....Pages 421-425
Diffusion and Defects in Amorphous Silicon....Pages 427-444
EPR Study of Defects Produced by Mev Ion Implantation Into Silicon....Pages 445-449
Vacancy Character of Damage Zones in Ion-Irradiated Silicon....Pages 451-457
Multiple Amorphous States in Ion Implanted Semiconductors (Si and InP)....Pages 459-464
The Mechanism of Solid Phase Epitaxy....Pages 465-476
The Amorphous Side of Solid Phase Epitaxy....Pages 477-482
Metal-Enhanced Growth of Silicon....Pages 483-499
Ion-Assisted Phase Transitions in Silicon....Pages 501-522
Ion-Assisted Nucleation in Amorphous Silicon....Pages 523-528
Back Matter....Pages 529-538