Control of Semiconductor Interfaces. Proceedings of the First International Symposium, on Control of Semiconductor Interfaces, Karuizawa, Japan, 8–12 November, 1993

Content: 
Front Matter, Page iii
Copyright, Page iv
PREFACE, Pages v-vi, Akio Hiraki
First International Symposium on Control of Semiconductor Interfaces, Pages vii-viii
Understanding semiconductor interfaces, Pages 1-8, Walter A. Harrison
Semiconductor Interfaces and Their Implications to VLSI Device Reliability, Pages 9-12, Yoshio Nishi
The Role of Hydrogen in Metal/Si Interface Formation, Pages 13-19, Kenjiro Oura
Correlation between barrier height and interface structure of Ag/Si(111) Schottky diodes, Pages 21-25, R.F. Schmitsdorf, T.U. Kampen, W. Mönch
Difference in Fermi-level pinning position and thermal stability between epitaxial and non-epitaxial Al/Si interfaces, Pages 27-32, Y. Miura, S. Fujieda, K. Hirose
Hydrogen-Mediated Epitaxial Clustering of Si(111) -Pb Surface Studied by TOF-ICISS, Pages 33-38, Yasunori Tanaka, Hideki Morishita, Fumiya Shoji, Kenjiro Oura, Itsuo Katayama
Schottky limit on ideally H-terminated unpinned silicon(111) surfaces, Pages 39-44, G. Le Lay, V.Yu. Aristov, K. Hricovini, A. Taleb-Ibrahimi, P. Dumas, R. Gunther, J. Osvald, G. Indlekofer
Heavy-Ion RBS/ERDA Studies on the Growth of Silver on Hydrogen-Terminated Si(111) Surfaces, Pages 45-49, Masamichi Naitoh, Hajime Morioka, Fumiya Shoji, Michio Watamori, Kenjiro Oura
Transition Metal/Silicon Interfaces: Interfacial Reaction and Electrical Properties, Pages 51-56, Y. Yasuda, S. Zaima, T. Yamauchi
Contact resistivity and interfacial reaction of V/(001)Si systems, Pages 57-62, S. Zaima, M. Kosaka, S. Tomioka, Y. Yasuda
Initial stage of InAs MBE growth on GaAs substrate, Pages 63-67, T. Nishinaga, I. Ichimura, T. Suzuki
Strain-compensations for interfacial strain and average strain in InGaAs/InAIP highly compressive-strained multiple quantum well structures on InP grown by gas source molecular beam epitaxy, Pages 69-73, K. Naniwae, S. Sugou, T. Anan
Origin of Tilt in Highly Mismatched Inx Ga1-xAs/GaAs Structures Grown by MOVPE, Pages 75-80, Naoki Hara, Kazumi Kasai, Junji Komeno
DEFECTS FORMED AT THE InGaAs/GaAs INTERFACE, Pages 81-86, ZUZANNA LILIENTAL-WEBER, Y. CHEN, J. WASHBURN
Towards high quality heteroepitaxy on mismatched substrate, Pages 87-92, T. Nishinaga, W.Y. Uen
Oxygen incorporation in GaAs/AlGaAs interfaces grown by molecular beam epitaxy, Pages 93-96, T. Someya, H. Akiyama, Y. Kadoya, H. Noge, H. Sakaki
Influence of thin Ge interlayer on anti-phase domain formation in GaAs growth, Pages 97-102, T. Saitoh, T. Yodo, J.E. Palmer, M. Tamura
Recent Applications of X-Ray Topography to the Study of III-V Semiconductors, Pages 103-108, I.C. Bassignana, D.A. Macquistan
In–situ Characterization of AlGaAs/GaAs Quantum Well Interfaces by Photoluminescence Surface State Spectroscopy, Pages 109-114, Toshiya Saitoh, Takayuki Sawada, Hideki Hasegawa
A New Raman System for In-Situ Observation of Semiconductor Crystal Growing in Flowing Gas, Pages 115-120, Masayuki Sugiura, Masato Kishi, Takashi Katoda
OMVPE GROWTH: AN IN SITU X-RAY ANALYSIS, Pages 121-126, P.H. Fuoss, D.W. Kisker, A.P. Payne, G.B. Stephenson, S. Brennan
Control of surface bonding by realtime monitoring using synchrotron radiation photoelectron spectroscopy, Pages 127-132, Fumihiko Maeda, Yoshio Watanabe, Masaharu Oshima
Metallic-semiconducting phase transition as observed in ultra thin FeSi2-Si heterostructures, Pages 133-141, J. Derrien, I. Berbezier, J. Chevrier
Initial features of diamond growth on silicon, Pages 143-147, H. Yagyu, N. Eimori, H. Makita, T. Yara, Y. Mori, A. Hatta, T. Ito, A. Hiraki
The Electron Affinity of CVD Diamond with Surface Modifications, Pages 149-154, N. Eimori, Y. Mori, A. Hatta, T. Ito, A. Hiraki
Electrical properties of polycrystalline diamond / hydrogenated amorphous silicon interfaces, Pages 155-160, Hideo Kiyota, Hideyo Okushi, Masamori Iida
HYDROGEN-TERMINATED SURFACES OF HOMOEPITAXIAL DIAMONDS AND THEIR METAL CONTACT PROPERTIES, Pages 161-166, H. Kawarada, M. Aoki, H. Sasaki, K. Tsugawa, I. Ohdomari
Nanocrystal growth of InSb on Se-passivated GaAs, Pages 167-168, Yoshio Watanabe, Fumihiko Maeda, Masaharu Oshima
Barrier Heights of 3C– and 6H–SiC Schottky Contacts: Explanation by the MIGS–and–Electronegativity Model, Pages 169-174, Winfried Mönch
Development of Thermally Stable NiGe—based Ohmic Contacts to n-type GaAs, Pages 175-180, Takeo Oku, Hirotaka R. Kawata, Akira Otsuki, Masanori Murakami
Electrical Abruptness of Ni/GaAs Interfaces Fabricated by In Situ Photoelectrochemical Process, Pages 181-186, Chinami KANESHIRO, Michiko SHIMURA, Tsugunori OKUMURA
Barrier Height Control and Current Transport in GaAs and InP Schottky Diodes Having An Ultrathin Silicon Interface Control Layer, Pages 187-192, Hideki Hasegawa, Ken-ichi Koyanagi, Seiya Kasai
Control of Schottky Barrier Height of InP by Phosphine Plasma Treatment, Pages 193-198, Yoshifumi Sakamoto, Takashi Sugino, Tatsuo Sumiguchi, Kuninori Nomoto, Junji Shirafuji
Novel interlayer as an interfacial reaction suppressor in high GaAs Schottky barrier, Pages 199-204, M. Oshima, T. Scimeca, Y. Watanabe, M. Sugiyama, S. Maeyama, H. Oigawa, Y. Nannichi
Interfacial Reaction between Metal and Bi2Sr2CaCu2Ox Layer Compound, Pages 205-210, T. Ito, K. Takahashi, T. Kimura, A. Hiraki, I. Shigaki
Effect of Deuterium Anneal on SiO2/Si(100) Interface Traps and MOS Tunneling Current of Ultrathin SiO2 Films, Pages 211-216, Hisashi Fukuda, Tomo Ueno, Hiroshi Kawarada, Iwao Ohdomari
Room temperature oxidation of silicon in the Cu3Si/Si structure, Pages 217-220, Jian Li, D. Adams, S.W. Russell, T.L. Alford, J.W. Mayer
Oxidation mechanism of dimers on Si(001) surfaces, Pages 221-226, T. Hoshino, M. Tsuda, S. Oikawa, I. Ohdomari
First-Principle Calculation of Core Level Energy Shifts on the Initial Oxidation Stage of Si(111) Surface, Pages 227-232, Hiroyuki Kageshima, Michiharu Tabe
Doping by Single Ion Implantation, Pages 233-240, Iwao Ohdomari
Radiation effects induced by high energy He single ions at Si/SiO2 interfaces, Pages 241-246, M. Koh, K. Hara, K. Horita, B. Shigeta, T. Matsukawa, A. Kishida, T. Tanii, M. Goto, I. Ohdomari
Reactions at Semiconductor Metal Interfaces, Pages 247-254, R. Sinclair, T.J. Konno, D.-H. Ko
Microscopic Understanding of Schottky Barrier Height at Epitaxial-Al/(111)Si Interface, Pages 255-260, S. Miyazaki, T. Okumura, Y. Miura, K. Hirose
Comparison of the spatial variation in the barrier height of Si and GaAs Schottky diodes as measured by ballistic electron emission microscopy, Pages 261-266, Karen L. Kavanag, A. Alec Talin, Brent A. Morgan, R. Stanley Williams, Ken Ring
Scanning tunneling microscopy of GaAs initial growth on InAs(001) vicinal surfaces, Pages 267-270, N. Ikoma, S. Ohkouchi
Application of Silicon Interface Control Layer Technique to Fabrication of InGaAs Metal-Insulator-Semiconductor FETs, Pages 271-276, S. Suzuki, Y.G. Xie, T. Sawada, H. Hasegawa
Control of Silicon Nitride-In0.53Ga0.47As Interface by Ultrathin Silicon Interface Control Layer, Pages 277-282, Satoshi Kodama, Hideki Hasegawa
Crystal orientations of orthorhombic BaMgF4 films grown on Si substrates, Pages 283-288, Koji Aizawa, Hiroshi Ishiwara
Heteroepitaxial growth of Al2O3 film on Si by remote rf plasma-excited metalorganic molecular beam epitaxy, Pages 289-294, Kiyoteru Hayama, Makoto Ishida, Tetsuro Nakamura
Performance of plasma deposited tungsten and tungsten nitride as thermally stable Schottky contact to GaAs, Pages 295-300, Yong Tae Kim, Suk-Ki Min, Chang Woo Lee
A new type of atomic ordering in Al0.48In0.52As and relationship between ordering structure and surface reconstruction during gas source MBE growth, Pages 301-302, Akiko Gomyo, Kikuo Makita, Isao Hino, Tohru Suzuki
Dimer Model for Comprehensive Interpretation of Selenium-Passivated GaAs(001) Surface Structures, Pages 303-304, Hidemi Shigekawa, Haruhiro Oigawa, Koji Miyake, Yoshiaki Aiso, Yasuo Nannichi, Tomihiro Hashizume, Toshio Sakurai
Unpinning of GaAs Surface Fermi Level by Atomic Layer Passivation, Pages 305-306, Yoshinori Wada, Kazumi Wada
Contactless electromodulation for the characterization of semiconductor surfaces/interfaces, Pages 307-314, Fred H. Pollak, H. Qiang, D. Yan, Yichun Yin, J.M. Woodall
High-spatial resolution analysis of interfaces of semiconductor superlattices by using nm-sized electron probe, Pages 315-320, N. Tanaka, Y. Koide, S. Zaima, Y. Yasuda
Three-dimensional Structures of Sulfur-passivated GaAs (111) and (100) analyzed by using Soft X-ray Standing Waves, Pages 321-325, M. Sugiyama, S. Maeyama, M. Oshima
Growth Mode of Ti-Thin Films on Si(111) and Double Heteroepitaxial Growth of Epi-Si/Epi-TiSi2/Si(111), Pages 327-332, Chi Kyu Choi, Sung Eun Boo, Soo Jeong Yang, Sang Shik Oh, Jeong Yong Lee, Hyung-Ho Park, Tong Soo Park, Kun Ho Kim
Nondestructive characterization of interfacial microstructures in multilayer semiconductors using synchrotron radiation techniques, Pages 333-338, Y.H. Kao
Surface chemical investigation and topography study of hydrogen baked Si surfaces by infrared spectroscopy and Atomic Force Microscopy, Pages 339-345, S. Verhaverbeke, H. Bender, O. Vatel, M. Caymax, J. Alay, F. Chollet, B. Vermeire, P. Mertens, E. André, W. Vandervorst, M.M. Heyns
Experimental Evidence for Hole-generated 1/f Noise Traps in MOS Transistors, Pages 347-350, Masaaki Aoki, Masataka Kato, Shuji Ikeda
Characteristics of an optoelectronic analogue memory in a GaAs metal-semiconductor-metal photodetector, Pages 351-355, T. Toyoda, Y. Nitta, Y. Koshiba, J. Ohta, S. Tai, K. Kyuma
The Interface Reactions of Cu and Ni with Pb/Sn Solder, Pages 357-358, Nobuaki TAKAHASHI, Atsushi NISHIZAWA, Naoji SENBA, Teruo KUSAKA
Dopant Control and Diffusion at the Si/Si1-xGex Interface for High-Speed Heterojunction Bipolar Transistors, Pages 359-364, J.E. Turner, P. Kuo, T.I. Kamins, J.L. Hoyt, K. Nauka, D. Lefforge, J.F. Gibbons
Planar to columnar structure transition of MBE grown Si/PtSi/Si(111) double heterostructure, Pages 365-369, Yoshinao Kumagai, Fumio Hasegawa, Kyung-ho Park
Interfaces and interface properties of the Au/Si(111) system, Pages 371-376, P. Morgen, A. Cohen Simonsen, K. Pedersen
Preparation and Electronic Properties of Epitaxial β-FeSi2 on Si(111) Substrate, Pages 377-382, S. Yamauchi, H. Ohshima, T. Hattori, M. Kasaya, M. Hirai, M. Kusaka, M. Iwami, Y. Kamiura, F. Hashimoto
Native Oxide Characterization on Silicon Surfaces, Pages 383-388, Hiroki Ogawa, Carlos Inomata, Kenji Ishikawa, Shuzo Fujimura, Haruhisa Mori
Effects of N+-polysilicon/SiO2 Interface on the Electrical Characteristics of MOS Capacitors, Pages 389-392, K.S. Tseng, H.C. Cheng, C.C. Chang, C.G. Lou, F.H. Yang
Nanometer scale plasma polymerized thin film formation and patterning, Pages 393-398, S. Gorwadkar, K. Senda, G. Vinogradov, R. Inanami C. Shao, S. Morita
The change of atomic structures and compositional ratios by thermal annealing of 2D Ag-Cu binary adsorbates on the Si(111) surface, Pages 399-404, J. Yuhara, R. Ishigami, K. Morita
Roughness Control and Electrical Properties of SiO2/Si(001) Interfaces, Pages 405-410, M. Niwa, K. Okada, T. Kouzaki, R. Sinclair
Structural and electrical properties of 28Si+ and 40Ar+ ion implanted epitaxial ReSi2 films grown on n - Si (100) substrate., Pages 411-416, Kun Ho Kim, Chi Kyu Choi
Effect of Surface Termination of Si-Cluster on the Visible Luminescence of Porous-Si: A Correlation with Hydrogen, Fluorine, and Oxygen Atoms, Pages 417-422, Rajesh Kumar, Yasuo Kitoh, Koichi Shigematsu, Kunihiko Hara
Metastable Phase Formation in Al alloy/TiN/Ti/Si Systems, Pages 423-428, S. Sobue, T. Yamauchi, T. Toyama, S. Mukainakano, K. Kondo, Y. Ueno, O. Takenaka, T. Hattori
A Study on the Interface of LPCVD-W and SiO2, Pages 429-433, J.H. Sone, J. Moon, H.J. Kim
Influence of Surface Charges on Four-Point-Probe Resistivity Measurement for N-Type Silicon Epitaxial Wafers, Pages 435-440, K Mitani, S. Saisu, M. Katayama
Effect of crystalline orientation on native oxide thickness measured by XPS, Pages 441-445, Takayuki Ikeoku, Tadahiro Komeda, Yasushiro Nishioka
FT-IR-RAS ANALYSIS OF THE STRUCTURE OF THE SiO2/Si INTERFACE, Pages 447-452, Kenji Ishikawa, Hiroki Ogawa, Carlos Inomata, Shuzo Fujimura, Haruhisa Mori
Study on lattice strain distribution in SiGe/Si system, Pages 453-457, Tsutomu Araki, Hiroyuki Watanabe, Norifumi Fujimura, Taichiro Ito
A trial to detect isolated defects in Si induced by single ion implantation, Pages 459-460, M. Koyama, Y. Akita, H. Kimura, M. Koh, K. Hara, K. Horita, B. Shigeta, I. Ohdomari
Two-dimensional MBE Growth Characteristics of InGaAs Studied by Scanning Tunneling Microscopy, Pages 461-465, K. Kanisawa, M. Tanimoto, N. Inoue
Characterization of the interface between Ga2Se3 epitaxial layer and (100)GaP substrate by transmission electron microscopy, Pages 467-470, T. Okamoto, A. Yamada, M. Konagai, K. Takahashi, K. Takahashi, N. Suyama
Interface formation between layered semiconductor GaSe and GaAs(001) surface, Pages 471-476, K. Fujita, T. Izumi, T. Tambo, C. Tatsuyama
MOCVD GROWTH OF GaN ON III-V, Si and GaAs-COATED-Si SUBSTRATES, Pages 477-482, Y. Ueta, Y. Kamiya, H. Sato, S. Sakai, M. Fukui, T. Soga, M. Umeno
Atomic incorporation difference between arsenic into GaSb and antimony into GaAs, Pages 483-488, Tomohiro Shibata, Yasushi Nanishi, Masatomo Fujimoto
The C-V Profile of Heavily Silicon δ -doped GaAs Grown by MBE, Pages 489-494, Takamasa. SUZUKI, Hideo. GOTO, Nobuhiko. SAWAKI, Hiroshi. ITO, Kunihiko. HARA
Interdiffusion effect on the band structure of GaAs/Ge superlattice, Pages 495-499, Tomonori Ito, Takahisa Ohno
Influence of the Cap Layer Thickness on the Interface Quality in In0.2Ga0.8As/GaAs Single Quantum Wells, Pages 501-505, S.M. Wang, T.G. Andersson
InP MIS Diode Improved by UV and Plasma Oxidation, Pages 507-511, Tetsuro Matsuda, Haruhiko Yoshida, Naoki Nara, Hirohiko Niu, Seigô Kishino
Observation of InP and GaInAs Surfaces after (NH4)2Sx Treatment by a Scanning Tunneling Microscope, Pages 513-517, Daisuke Sonoda, Kazuhiro Kurihara, Francisco Vazquez, Yasuyuki Miyamoto, Kazuhito Furuya
Zinc diffusion into InGaAsP materials using dimethylzinc by open tube technique, Pages 519-524, T. Tsuchiya, T. Taniwatari, M. Komori, T. Kawano, K. Saitoo
Open-tube diffusion in GaAs using zinc- and tin-doped spin-on silica films, Pages 525-530, K. Okamoto, A. Yamada, Y. Shimogaki, Y. Nakano, K. Tada
High-Resolution TEM Evaluation of InAs/InP Strained Layer Superlattices Grown on (001)InAs Substrates by Atomic Layer Epitaxy, Pages 531-536, O. Ueda, Y. Sakuma, M. Ozeki, N. Ohtsuka, K. Nakajima
Incorporation Process of the As Atom on InP(001) Surface Studied by EXAFS, Pages 537-542, R. Shioda, H. Oyanagi, Y. Kuwahara, Y. Takeda, K. Haga, H. Kamei
EXAFS Study for the 1ML InP1-xAsx Layers on InP(001), Pages 543-547, Y. Kuwahara, R. Shioda, H. Oyanagi, Y. Takeda, K. Haga, H. Kamei, M. Aono
Raman scattering of ultrathin InAs layers inserted in GaAs, Pages 549-553, Masaya Ichimura, Akira Usami, Masao Tabuchi, Akio Sasaki
Determination of strain distribution at the GaAsP/GaAs interface by thickness fringe analysis, Pages 555-560, T. Soga, J. Inoue, T. Jimbo, M. Umeno
Evaluation of pn Junction Interfaces in InGaAsP/InGaAsP MQW LD by the C-V Method, Pages 561-566, Norio YAMAMOTO, Mitsuo YAMAMOTO
Effects of Interface States on C-V Profile Characterization of Semiconductor-Semiconductor Interfaces of GaAs and Related Alloys, Pages 567-572, H. Tomozawa, H. Hasegawa
Surface Structures of GaAs(001) with Selenium Adsorbate Studied by Scanning Tunneling Microscopy, Pages 573-574, Hidemi Shigekawa, Haruhiro Oigawa, Koji Miyake, Yoshiaki Aiso, Yasuo Nannichi, Tomihiro Hashizume, Toshio Sakurai
AUTHOR INDEX, Pages 575-578
SUBJECT INDEX, Pages 579-583