Advances in Semiconductor Nanostructures. Growth, Characterization, Properties and Applications

Content: 
Front-matter,Copyright,List of Contributors,PrefaceEntitled to full textPart I: Low-Dimensional Systems: Theory and Experiment1 - The Theory of Two-Dimensional Electronic Systems*, Pages 3-28, A.V. Chaplik, M.V. Entin
2 - Two-Dimensional Semimetal in HgTe-Based Quantum Wells, Pages 29-48, Z.D. Kvon, E.B. Olshanetsky, D.A. Kozlov, N.N. Mikhailov, S.A. Dvoretsky
3 - Nonlinear Two-Dimensional Electron Conductivity at High Filling Factors, Pages 49-58, A.A. Bykov, S.A. Vitkalov
4 - Silicon-Based Nanoheterostructures With Quantum Dots, Pages 59-99, A.V. Dvurechenskii, A.I. Yakimov
5 - Electron Transport: From Nanostructures to Nanoelectromechanical Systems, Pages 101-129, A.G. Pogosov, M.V. Budantsev, A.A. Shevyrin, E.Yu. Zhdanov, D.A. Pokhabov
6 - Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures, Pages 131-155, O.A. Tkachenko, V.A. Tkachenko, Z.D. Kvon, D.V. Sheglov, A.L. Aseev
7 - Spectroscopy of Vibrational States in Low-Dimensional Semiconductor Systems, Pages 157-186, A.G. Milekhin, D.R.T. Zahn
8 - Atomic Processes on the Silicon Surface, Pages 189-221, A.V. Latyshev, L.I. Fedina, S.S. Kosolobov, S.V. Sitnikov, D.I. Rogilo, E.E. Rodyakina, D.A. Nasimov, D.V. Sheglov, A.L. Aseev
9 - Atomic Structure of Semiconductor Low-Dimensional Heterosystems, Pages 223-253, A.K. Gutakovskii, A.V. Latyshev, A.L. Aseev
10 - Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions, Pages 255-277, V.L. Alperovich, I.O. Akhundov, D.M. Kazantsev, N.S. Rudaya, E.E. Rodyakina, A.S. Kozhukhov, D.V. Sheglov, A.N. Karpov, N.L. Shwartz, A.S. Terekhov, A.V. Latyshev
11 - Atomic Processes in the Formation of Strained Ge Layers on Si(111) and (001) Substrates Within the Stransky–Krastanov Growth Mechanism, Pages 279-295, S.A. Teys
12 - Molecular Beam Epitaxy of CdxHg1−xTe, Pages 297-323, Yu.G. Sidorov, A.P. Anciferov, V.S. Varavin, S.A. Dvoretsky, N.N. Mikhailov, M.V. Yakushev, I.V. Sabinina, V.G. Remesnik, D.G. Ikusov, I.N. Uzhakov, G.Yu. Sidorov, V.D. Kuzmin, S.V. Rihlicky, V.A. Shvets, A.S. Mardezov, E.V. Spesivcev, A.K. Gutakovskii, A.V. Latyshev
13 - Surface Morphologies Obtained by Ge Deposition on Bare and Oxidized Silicon Surfaces at Different Temperatures, Pages 325-344, A.A. Shklyaev, K.N. Romanyuk, S.S. Kosolobov, A.V. Latyshev
14 - Monte Carlo Simulation of Semiconductor Nanostructure Growth, Pages 345-364, I.G. Neizvestny, N.L. Shwartz
15 - The Energy Pulse-Oriented Crystallization Phenomenon in Solids (Laser Annealing), Pages 367-381, A.V. Dvurechenskii
16 - Universality of the {113} Habit Plane in Si for Mixed Aggregation of Vacancies and Self-Interstitial Atoms Provided by Topological Bond Defect Formation, Pages 383-407, L.I. Fedina, A.K. Gutakovskii, A.V. Latyshev, A.L. Aseev
17 - Silicon-on-Insulator Structures Produced by Ion-Beam Synthesis and Hydrogen Transfer, Pages 409-433, I.E. Tyschenko, V.P. Popov
18 - Superminiature Radiation Sources Based on Semiconductor Nanostructures, Pages 437-461, V.A. Haisler, A.V. Haisler, I.A. Derebezov, A.S. Yaroshevich, A.K. Bakarov, D.V. Dmitriev, A.K. Kalagin, A.I. Toropov, M.M. Kachanova, Yu.A. Zhivodkov, T.A. Gavrilova, A.S. Medvedev, L.A. Nenasheva, O.I. Semenova, K.V. Grachev, V.K. Sandyrev, A.S. Kozhukhov, D.V. Sheglov, D.B. Tretyakov, I.I. Beterov, V.M. Entin,  et al.
19 - Three-Dimensional Systems and Nanostructures: Technology, Physics and Applications, Pages 463-492, V.Ya. Prinz
20 - The Nature of Defects Responsible for Transport in a Hafnia-Based Resistive Random Access Memory Element, Pages 493-504, D.R. Islamov, T.V. Perevalov, V.A. Gritsenko, V.Sh. Aliev, A.A. Saraev, V.V. Kaichev, E.V. Ivanova, M.V. Zamoryanskaya, A. Chin
21 - The Optical Multiplexor Based on Multiple Coupled Waveguides in Silicon-on-Insulator Structures, Pages 505-519, A.V. Tsarev
Index, Pages 521-527