Advanced SPICE Model for GaN HEMTs (ASM-HEMT): A New Industry-Standard Compact Model for GaN-based Power and RF Circuit Design

Preface
Acknowledgments
Contents
Acronyms
1 Gallium Nitride Semiconductor Devices
	1.1 Introduction
	1.2 Application-Level View of Transistor
		1.2.1 Radio-Frequency Power Amplifier Application
		1.2.2 Power Electronics Switching Application
	1.3 GaN Material Properties
		1.3.1 Band-Gap and Breakdown Electric Field
		1.3.2 Electron Mobility
		1.3.3 Saturation Velocity
	1.4 Brief History and Key Advances in GaN Transistors
	1.5 Conclusion
2 Compact Modeling
	2.1 Introduction to Compact Models
	2.2 Types of Compact Models
		2.2.1 Measurement-Based Compact Models
		2.2.2 Empirical Compact Models
		2.2.3 TCAD Models
		2.2.4 Neural Network Based Compact Models
		2.2.5 Physics-Based Compact Models
	2.3 Comparison Among Different Compact Models
	2.4 GaN Compact Models
	2.5 Compact Model Coalition and Industry Standard GaN Compact Models
3 Introduction to ASM-HEMT Compact Model
	3.1 User-Level View of ASM-HEMT Compact Model
		3.1.1 Device Geometry Parameters
		3.1.2 Model Configuration Switches
			Model Configuration Switches for Device Architecture
			Model Configuration Switches for Physical Effects
		3.1.3 Device Physics Parameters
		3.1.4 Smoothing Parameters
	3.2 Components of ASM-HEMT Compact Model
	3.3 ASM-HEMT Model Features
4 Core Formulations in ASM-HEMT Model
	4.1 Introduction
	4.2 Two-Dimensional Electron Gas Model
	4.3 Surface-Potential Model
	4.4 Terminal Charge Model
	4.5 Core Drain Current Model
		4.5.1 Mechanisms of Carrier Transport
5 Non-ideal Effects in Device Current and Their Modeling
	5.1 Introduction
	5.2 Pinch-Off Effect
	5.3 Velocity Saturation Effect
	5.4 Non-ideal Sub-threshold Slope
	5.5 Mobility Dependence of Vertical Field
	5.6 Channel-Length Modulation Effect
	5.7 Drain-Induced Barrier Lowering Effect
	5.8 Non-linear Access Region Resistance Model
6 Trapping Models
	6.1 Introduction
	6.2 Model with Symmetric Time-Constants
	6.3 Model with Asymmetric Time-Constants
	6.4 Trapping Model Based on Recombination Generation
	6.5 Measurement Results
	6.6 Circuit Implementation of a Trap Center
		6.6.1 Rates of Charge Capture and Emission at a TrapCenter
		6.6.2 Control Potential of a Trap Center
		6.6.3 Current Injection into a Trap-Center Region
		6.6.4 Circuit Model of a Trap Center
		6.6.5 Steady-State Response
		6.6.6 Circuit Model for an Electron-Trapping Center
	6.7 Discussion
7 Non-Ideal Effects in GaN Capacitances and Their Modeling
	7.1 Introduction
	7.2 Impact of Fringe Capacitances
	7.3 Impact of Field-Plates on Device Capacitance
		7.3.1 Gate–Source Capacitance
		7.3.2 Gate–Drain Capacitance
		7.3.3 Drain–Source Capacitance
	7.4 Impact of High Field Region on Capacitance
	7.5 Impact of Charge Trapping on Capacitance
	7.6 Substrate Bias Effects and Substrate Capacitance
8 Gate Current Model
	8.1 Diode-Based Formulation
	8.2 Model Based on Frenkel–Poole Mechanism
	8.3 Gate Current with Consistency with Drain Current
		8.3.1 Thermionic Emission Model
		8.3.2 Poole–Frenkel Model
		8.3.3 Fowler–Nordheim Model
9 Effect of Ambient Temperature on GaN Device
	9.1 Introduction
	9.2 Temperature Dependence of Parameters Affecting DrainCurrent
		9.2.1 Cut-Off Voltage
		9.2.2 Mobility
		9.2.3 Saturation Velocity
		9.2.4 Access Region Charge Density
		9.2.5 Contact Resistance
	9.3 Temperature Dependence of Gate Current Parameters
	9.4 Self-Heating Effect and Modeling for Multiple Ambient Temperatures
10 Noise Models
	10.1 Flicker Noise
	10.2 Thermal Noise
11 Parameter Extraction in ASM-HEMT Model
	11.1 GaN RF Device Extraction Flow
		11.1.1 DC Parameter Extraction
		11.1.2 S-Parameter Model
		11.1.3 Non-Linear Large Signal Model
	11.2 GaN Power Device Extraction Flow
		11.2.1 I-V Parameter Extraction
		11.2.2 Capacitance Modeling
		11.2.3 Modeling the Package Parasitics
	11.3 Model Quality Tests
		11.3.1 Gummel Symmetry Test Results
		11.3.2 Harmonic Balance Simulation Results
		11.3.3 AC Symmetry Test Results
		11.3.4 Reciprocity Test Results
12 Advance Simulations with ASM-HEMT Model
	12.1 Manufacturing Variation and RF Device Stability Analysis
		12.1.1 Custom Python Script
		12.1.2 Non-Linear Stability Analysis in the Presence of Manufacturing Variations
		12.1.3 Nominal Device Non-Linear Stability Analysis
	12.2 GaN Power Device Circuit Simulations Using ASM-HEMT
	12.3 Design Technology Co-optimization Using ASM-HEMT
		12.3.1 Barrier Thickness Dependence of AM/PM
		12.3.2 Field-Plate Dependence of AM/PM
13 Resources for ASM-HEMT Model Users
	13.1 GITHUB Repository
References
Index