Advanced High Speed Devices

Cover\r......Page 1
Title\r......Page 2
SELECTED TOPICS IN ELECTRONICS AND SYSTEMS......Page 3
Copyright\r......Page 5
PREFACE......Page 6
CONTENTS......Page 10
SIMULATION AND EXPERIMENTAL RESULTS ON GaN BASED\rULTRA-SHORT PLANAR NEGATIVE DIFFERENTIAL CONDUCTIVITY\rDIODES FOR THz POWER GENERATION......Page 12
5-TERMINAL THz GaN BASED TRANSISTOR WITH FIELD- AND SPACECHARGE\rCONTROL ELECTRODES......Page 18
PERFORMANCE COMPARISON OF SCALED III-V AND Si BALLISTIC\rNANOWIRE MOSFETs......Page 26
A ROOM TEMPERATURE BALLISTIC DEFLECTION TRANSISTOR FOR\rHIGH PERFORMANCE APPLICATIONS......Page 34
EMISSION AND INTENSITY MODULATION OF TERAHERTZ\rELECTROMAGNETIC RADIATION UTILIZING 2-DIMENSIONAL\rPLASMONS IN DUAL-GRATING-GATE HEMT’S......Page 43
MILLIMETER WAVE TO TERAHERTZ IN CMOS......Page 64
THE EFFECTS OF INCREASING AlN MOLE FRACTION ON THE\rPERFORMANCE OF AlGaN ACTIVE REGIONS CONTAINING NANOMETER\rSCALE COMPOSITIONALLY INHOMOGENEITIES......Page 77
SURFACE ACOUSTIC WAVE PROPAGATION IN GaN-ON-SAPPHIRE\rUNDER PULSED SUB-BAND ULTRAVIOLET ILLUMINATION......Page 85
SOLAR-BLIND SINGLE-PHOTON 4H-SiC AVALANCHE PHOTODIODES......Page 92
MONTE CARLO SIMULATIONS OF In0.75Ga0.25As MOSFETs AT 0.5 V\rSUPPLY VOLTAGE FOR HIGH-PERFORMANCE CMOS......Page 100
THE FIRST 70NM 6-INCH GaAs PHEMT MMIC PROCESS......Page 108
HIGH-PERFORMANCE 50-NM METAMORPHIC HIGH ELECTRONMOBILITY\rTRANSISTORS WITH HIGH BREAKDOWN VOLTAGES......Page 114
MBE GROWTH AND CHARACTERIZATION OF Mg-DOPED III-NITRIDES\rON SAPPHIRE......Page 120
PERFORMANCE OF MOSFETs ON REACTIVE-ION-ETCHED GaN\rSURFACES......Page 127
HIGH CURRENT DENSITY/HIGH VOLTAGE AlGaN/GaN HFETs\rON SAPPHIRE......Page 134
InAlN/GaN MOS-HEMT WITH THERMALLY GROWN OXIDE......Page 141
GaN TRANSISTORS FOR POWER SWITCHING AND\rMILLIMETER-WAVE APPLICATIONS......Page 149
4-NM AlN BARRIER ALL BINARY HFET WITH SiNx GATE DIELECTRIC......Page 157
EFFECT OF GATE OXIDE PROCESSES ON 4H-SiC MOSFETs ON\r(000-1) ORIENTED SUBSTRATE......Page 164
CHARACTERIZATION AND MODELING OF INTEGRATED DIODE IN\r1.2kV 4H-SiC VERTICAL POWER MOSFET......Page 170
PACKAGING AND WIDE-PULSE SWITCHING OF 4 MM x 4 MM SILICON\rCARBIDE GTOs......Page 176
BI-DIRECTIONAL SCALABLE SOLID-STATE CIRCUIT BREAKERS FOR\rHYBRID-ELECTRIC VEHICLES......Page 185