3D Integration of Resistive Switching Memory

Cover
Half Title
Series Page
Title Page
Copyright Page
Contents
Contributors
1. Introduction
2. Crosstalk in Crossbar Array and 3D Architectures
	References, Bibliography, or Works Cited
3. Selector Devices and Self-Selective Cells
	3.1. Nonlinear Selector Devices
		3.1.1. Tunnel Barrier-Based/Type Selector
		3.1.2. Metal Conductive Filament-Based Threshold Switching Selector
		3.1.3. Metal Insulator Transition Selector
		3.1.4. Ovonic Threshold Switch Selector
	3.2. Self-Selective Devices
		3.2.1. Self-Rectifying RRAM
		3.2.2. Built-in nonlinearity RRAM
			3.2.2.1. SSC with Threshold Type Selection Layer
			3.2.2.2. SSC with Exponential Type Selection Layer
	References, Bibliography, or Works Cited
4. Integration of 3D RRAM
	References, Bibliography, or Works Cited
5. Reliability Issues of the 3D Vertical RRAM
	5.1. RTN-Based Defect Tracking Technique
	5.2. Switching Mechanism of Self-Selective Cell in 3D VRRAM
	5.3. Failure Mechanism
	5.4. Moisture Stress
	5.5. Process Deviation
	References, Bibliography, or Works Cited
6. Applications of 3D RRAM beyond Storage
	6.1. Neuromorphic Computing
	6.2. Artificial Synapses
	6.3. Artificial Neurons
	6.4. SNN Based on RRAM Array
	6.5. Neuromorphic Sensing Applications
	6.6. 3D Synaptic Array for Computing
	6.7. Neuromorphic Hardware Design Based on the 3D VRRAM
	6.8. Computing-in-Memory Macro Based on 3D RRAM
	6.9. 3D Reservoir Computing Based on 3D Dynamic Memristors
	6.10. Physical Unclonable Functions Based on 3D RRAM
	References, Bibliography, or Works Cited
7. Conclusion