Wide-Band-Gap Semiconductors

Content: 
Copyright, Page iv
Front Matter, Page v
Conference photograph, Page vi
Preface, Pages vii-viii, A. Frova, E. Tosatti
Introduction, Pages ix-x, Chris G. Van De Walle
Thin films and devices of diamond, silicon carbide and gallium nitride, Pages 1-15, Robert F. Davis
Optical physics and laser devices in II–VI quantum confined heterostructures, Pages 16-26, Arto V. Nurmikko, Robert L. Gunshor
Blue-green II–VI laser diodes, Pages 27-35, C.T. Walker, J.M. Depuydt, M.A. Haase, J. Qiu, H. Cheng
Growth of GaN by ECR-assisted MBE, Pages 36-49, T.D. Moustakas, T. Lei, R.J. Molnar
Ar ion laser-assisted metalorganic vapor phase epitaxy of ZnSe, Pages 50-64, Akihiko Yoshikawa
Progress in epitaxial growth of SiC, Pages 65-74, Hiroyuki Matsunami
CVD growth and characterization of single-crystalline 6H silicon carbide, Pages 75-78, S. Karmann, C. Haberstroh, F. Engelbrecht, W. Suttrop, A. Schöner, M. Schadt, R. Helbig, G. Pensl, R.A. Stein, S. Leibenzeder
Influence of temperature on the formation by reactive CVD of a silicon carbide buffer layer on silicon, Pages 79-84, N. Bécourt, J.L. Ponthenier, A.M. Papon, C. Jaussaud
A model for the buffer layer formed on silicon during HFCVD diamond growth, Pages 85-89, En Ge Wang
Growth of diamond films from microwave plasma in CH4–CO2 mixtures, Pages 90-93, G. Balestrino, M. Marinelli, E. Milani, A. Paoletti, P. Paroli, I. Pinter, A. Tebano, G. Lucea
Early stages of nucleation and growth of diamond film by AES, SEM, UPS and optical reflectivity techniques: Surface composition, Pages 94-98, L. Ferrari, S. Selci, A.C. Felici, M. Righini, M.A. Scarselli, A. Cricenti, R. Polini
Crystal growth of III-N compounds under high nitrogen pressure, Pages 99-102, I. Grzegory, J. Jun, S.T. Krukowski, M. Boćkowski, S. Porowski
Substrate-quality, single-crystal ZnSe for homoepitaxy using seeded physical vapor transport, Pages 103-108, H.L. Cotal, B.G. Markey, S.W.S. Mckeever, Gene Cantwell, W.C. Harsch
MOVPE-growth and physics of ZnSe–ZnTe superlattices, Pages 109-111, T. Cloitre, O. Briot, B. Gil, D. Bertho, J.M. Jancu, B.E. Ponga, P. Boring, H. Mathieu, C. Jouanin, R.L. Aulombard
ZnSe-based laser diodes and p-type doping of ZnSe, Pages 112-117, K. Ohkawa, A. Tsujimura, S. Hayashi, S. Yoshii, T. Mitsuyu
Doping limits in ZnSe, Pages 118-127, David B. Laks, Chris G. Van De Walle
Self-compensation in nitrogen-doped ZnSe, Pages 128-131, D.J. Chadi, N. Troullier
Residual defect control when doping thin layers in diamond, Pages 132-143, Johan F. Prins
Impurity incorporation and doping of diamond, Pages 144-149, S.A. Kajihara, A. Antonelli, J. Bernholc
Microscopic characterization of heavy-ion implanted diamond, Pages 150-153, A. Burchard, M. Restle, M. Deicher, H. Hofsäss, S.G. Jahn, Th. König, R. Magerle, W. Pfeiffer, U. Wahl
Pseudopotential total-energy calculations of column-V acceptors in ZnSe, Pages 154-158, K.W. Kwak, R.D. King-Smith, David Vanderbilt
New acceptor-related compensation mechanisms in wide band gap semiconductors, Pages 159-163, Taizo Sasaki, Tamio Oguchi, Hiroshi Katayama-Yoshida
Low-temperature MBE growth of p-type ZnSe using UV laser irradiation, Pages 164-168, J. Simpson, I. Hauksson, S.Y. Wang, H. Stewart, K.A. Prior, B.C. Cavenett
Resonant photoluminescence measurements in As- and P-doped ZnTe epilayers, Pages 169-173, H.P. Wagner, S. Lankes, K. Wolf, M. Wörz, T. Reisinger, A. Naumov, W. Kuhn, H. Stanzl, W. Gebhardt
Gallium and nitrogen ion implantation in MOVPE-grown ZnSe/GaAs, Pages 174-178, J. Geurts, J. Hermans, G. Gleitsman, K.P. Geyzers, A. Schneider, M. Heuken, K. Heime
Theory of impurities in diamond, Pages 179-189, P.R. Briddon, R. Jones
Defects, optical absorption and electron mobility in indium and gallium nitrides, Pages 190-198, T.L. Tansley, R.J. Egan
Point defects in silicon carbide, Pages 199-206, Jürgen Schneider, Karin Maier
Annealing behaviour of In impurities in SiC after ion implantation, Pages 207-210, J. Meier, N. Achtziger, T. Licht, M. Uhrmacher, W. Witthuhn
Formation of macrodefects in SiC, Pages 211-216, R.A. Stein
Hydrogen in polycrystalline diamond: An infrared analysis, Pages 217-221, B. Dischler, C. Wild, W. Müller-Sebert, P. Koidl
The 2.96 eV centre in diamond, Pages 222-227, E. Pereira, L. Santos
Study of defects in wide band gap semiconductors by electron paramagnetic resonance, Pages 228-233, M. Fanciullia, T.D. Moustakasb
Site-selective study of picosecond relaxation processes of Ni2+ in polymorphic ZnS, Pages 234-238, R. Heitz, L. Eckey, A. Hoffmann, I. Broser
Magneto-optics of Cu-related defects in polymorphic ZnS, Pages 239-244, P. Thurian, R. Heitz, T. Jentzsch, A. Hoffmann, I. Broser
Centers of radiative and nonradiative recombination in isoelectronically doped ZnSe : Te crystals, Pages 245-249, R. Baltramiejūnas, V.D. Ryzhikov, G. Račiukaitis, V. Gavryushin, D. Juodžbalis, A. Kazlauskas
Luminescence from structural defects in heteroepitaxial MOVPE-grown ZnTe, Pages 250-254, A. Naumov, K. Wolf, T. Reisinger, H. Stanzl, H.P. Wagner, W. Gebhardt
Intracenter transitions of transition metal impurities in II–VI semiconductors, Pages 255-258, A. Bouhelal, J.P. Albert
PAD-investigations on MnS cluster formation within the diluted magnetic semiconductor ZnMnS, Pages 259-263, H. Hoffmann, H.-E. Gumlich, U. Kißmann, U.W. Pohl, H. Waldmann, H.-E. Mahnke, B. Spellmeyer, G. Sulzer, W. Zeitz
Electrical and optical characterization of SiC, Pages 264-283, G. Pensl, W.J. Choyke
Intrinsic and extrinsic absorption and luminescence in diamond, Pages 284-296, Alan T. Collins
Characterisation of ZnSe and other II–VI semiconductors by radioactive dopants, Pages 297-307, Thomas Wichert, Thomas Krings, Herbert Wolf
Temperature dependence of electrical properties of 3C–SiC(1 1 1) heteroepitaxial films, Pages 308-312, Mitsugu Yamanaka, Keiko Ikoma
Exciton luminescence of compensated SiC–6H, Pages 313-318, V.V. Evstropov, I.Yu. Linkov, Ya.V. Morozenko, F.G. Pikus
Spatially resolved cathodoluminescence of semiconductors, Pages 319-324, C. Trager-Cowan, A. Kean, F. Yang, B. Henderson, K.P. O'Donnell
Electronic structure and dynamical behaviour of different bound-exciton complexes in ZnSe bulk crystals, Pages 325-331, G.H. Kudlek, U.W. Pohl, Ch. Fricke, R. Heitz, A. Hoffmann, J. Gutowski, I. Broser
Self-induced transmission and luminescence oscillations in thin CdS films, Pages 332-335, Bruno Ullrich
Nonlinear spectroscopy of DA-centers in CdS crystals: Stepwise exciton localization by isoelectronic defects, Pages 336-341, R. Baltramiejūnas, V. Gavryushin, V. Kubertavičius, G. Račiukaitis
Characterization of SiN thin films with spectroscopic ellipsometry, Pages 342-347, J. Petalas, S. Logothetidis, A. Markwitz, E.C. Paloura, R.L. Johnson, D. Fuchs
Resonant Raman scattering and free-exciton emission in CuGaS2 crystals, Pages 348-351, N. Tsuboi, H. Uchiki, M. Sawada, H. Kinto, M. Yagi, S. Iida, M. Morohashi, S. Okamoto
Radiative recombination processes in ZnSe/ZnSexSe1–x multiple-quantum-well structures, Pages 352-356, M. Dabbicco, R. Cingolani, G. Scamarcio, M. Lepore, M. Ferrara, I. Suemune, Y. Kuroda
Optical study of octahedrally and tetrahedrally coordinated MnSe, Pages 357-361, W. Heimbrodt, O. Goedea, I. Tschentscher, V. Weinhold, A. Klimakow, U. Pohl, K. Jacobs, N. Hoffmann
The origin of the Stokes shift: The line shapes of quantum well exciton absorption and photoluminescence spectra, Pages 362-365, Fang Yang, B. Henderson, K.P. O'donnell
Structural and electronic properties of SiC polytypes, Pages 366-378, A. Qteish, Volker Heine, R.J. Needs
Chemical order in amorphous covalent alloys: A theoretical study of a-SiC, Pages 379-383, Fabio Finocchi, Giulia Galli, Michele Parrinello, Carlo M. Bertoni
Far-infrared cyclotron resonance in n-3C–SiC at megagauss magnetic fields, Pages 384-388, S. Takeyama, J. Kono, N. Miura, M. Yamanaka, M. Shinohara, K. Ikoma
Investigation of the electronic transitions of cubic SiC, Pages 389-393, S. Logothetidis, H.M. Polatoglou, J. Petalas, D. Fuchs, R.L. Johnson
Electronic band structure and optical properties of cubic silicon carbide crystals, Pages 394-399, V.I. Gavrilenko, S.I. Frolov, N.I. Klyui
Quasiparticle corrections for diamond and diamond surfaces, Pages 400-403, C. Kreß, M. Fiedler, F. Bechstedt
The electronic structure of gallium nitride, Pages 404-409, Maurizia Palummo, Carlo M. Bertoni, Lucia Reining, Fabio Finocchi
Band structure and high-pressure phase transition in GaN, A1N, InN and BN, Pages 410-414, I. Gorczyca, N.E. Christensen
Electronic structure, surface composition and long-range order in GaN, Pages 415-421, R.W. Hunt, L. Vanzetti, T. Castro, K.M. Chen, L. Sorba, P.I. Cohen, W. Gladfelter, J.M. Van Hove, J.N. Kuzni, M. Asif Khan, A. Franciosi
High-pressure structural phase transition and electronic properties of the group-III nitrides, Pages 422-425, A. Muñoz, K. Kunc
Physical properties of GaN and A1N under pressures up to 0.5 Mbar, Pages 426-427, P. Perlin, A. Polian, J.P. Itie, I. Grzegory, E. Litwin–Staszewska, T. Suski
Conductivity control of GaN and fabrication of UV/blue GaN light emitting devices, Pages 428-432, I. Akasaki, H. Amano, N. Koide, M. Kotaki, K. Manabe
Electrical characterization of II–VI compounds and devices, Pages 433-439, T. Marshall
Silicon carbide and SiC–AlN solid-solution p–n structures grown by liquid-phase epitaxy, Pages 440-452, V.A. Dmitriev
Blue LEDs, UV photodiodes and high-temperature rectifiers in 6H–SiC, Pages 453-460, John A. Edmond, Hua-Shuang Kong, Calvin H. Carter Jr.
6H–silicon carbide devices and applications, Pages 461-465, J.W. Palmour, J.A. Edmond, H.S. Kong, C.H. Carter Jr.
An ensemble Monte Carlo study of high-field transport in β-SiC, Pages 466-470, K. Tsukioka, D. Vasileska, D.K. Ferry
High-temperature transport of electrons in diamond, Pages 471-474, Mohamed A. Osman
Ensemble Monte Carlo calculation of electron impact ionization coefficients in bulk Ga0.5In0.5P using a k-dependent transition rate formulation, Pages 475-479, Yang Wang, Kevin F. Brennan
Electric properties of GaN: Zn MIS-type light emitting diode, Pages 480-484, Md. Rezaul Huque Khan, Isamu Akasaki, Hiroshi Amano, Nobuo Okazaki, Katsuhide Manabe
A new approach to wide band gap visible-light emitters, Pages 485-489, M.C. Phillips, J.F. Swenberg, M.W. Wang, J.O. McCaldin, T.C. McGill
Microgun pumped semiconductor lasers: Application to CdTe–CdMnTe, Pages 490-495, E. Molva, R. Accomo, G. Labrunie, J. Cibert, C. Bodin, Le Si Dang, G. Feuillet
II–VI quantum-confined Stark effect modulators, Pages 496-499, Y. Kawakami, S.Y. Wang, J. Simpson, I. Hauksson, S.J.A. Adams, H. Stewart, B.C. Cavenett, K.A. Prior
New type blue-light emitting diode using epitaxial ZnS films grown on GaAs by MOVPE, Pages 500-504, Shigeki Yamaga
High-efficiency electron-beam-pumped semiconductor laser emitters, Pages 505-507, A.L. Gurskii, E.V. Lutsenko, A.I. Mitcovets, G.P. Yablonskii
Photovoltage and carrier concentration profiles of ZnSe/ZnCdSe quantum well laser diodes, Pages 508-511, S.Y. Wang, J. Simpson, H. Stewart, S.J.A. Adams, I. Hauksson, Y. Kawakami, M.R. Taghizadeh, K.A. Prior, B.C. Cavenett
Electronic structure of copper/diamond interfaces including effects of interfacial hydrogen, Pages 512-527, Walter R.L. Lambrecht
Properties of interfaces of diamond, Pages 528-538, R.J. Nemanich, L. Bergman, K.F. Turner, J. van der Weide, T.P. Humphreys
Reconstruction of the diamond (1 1 1) surface, Pages 539-541, Simonetta Iarlori, Giulia Galli, François Gygi, Michele Parrinello, Erio Tosatti
Photocreation and photobleaching of a-SiN1.6:H/c-Si interface states studied by photocapacitance transient spectroscopy, Pages 542-545, C. Godet, J. Kanicki
Interdiffusion effects in the band offset modification by intralayer deposition at semiconductor homojunctions, Pages 546-550, P. Rodríguez-Hernández, A. Mujica, A. Muñoz
Optical study of the piezoelectric field effect in (1 1 1)-oriented CdTe/CdMnTe strained quantum wells, Pages 551-556, Le Si Dang, R. André, C. Bodin-Deshayes, J. Cibert, H. Okumura, G. Feuillet, P.H. Jouneau
Microscopic control of ZnSe–GaAs heterojunction band offsets, Pages 557-565, G. Bratina, L. Vanzetti, R. Nicolini, L. Sorba, X. Yu, A. Franciosi, Guido Mula, A. Mura
Exciton dynamics in Cd0.33Zn0.67Te/ZnTe single quantum wells, Pages 566-570, J.P. Doran, R.P. Stanley, J.F. Donegan, J. Hegarty, R. Fischer, E.O. Göbel, R.D. Feldman, R.F. Austin
Time-resolved luminescence from II–VI quantum dots, Pages 571-574, A. Schülzgen, J. Puls, F. Henneberger, V. Jungnickel
Luminescence polarization of CdSe microcrystals with hexagonal lattice structure, Pages 575-579, Al.L. Efros
Characterization of ZnSe/GaAs heterojunctions by SIMS and ellipsometry, Pages 580-584, M. Pirzer, B. Sailer, M.Ch. Lux-Steiner, E. Bucher, J.J. Dubowski, S.J. Rolfe
On the composition and structure of In–ZnTe contacts, Pages 585-587, V.K. Kononenko, E.B. Boiko, P.A. Tupenevich
Nonlinear absorption and photoluminescence of CuCl crystallites under size quantization of excitons, Pages 588-592, S.V. Gaponenko, I.N. Germanenko, V.P. Gribkovskii, L.G. Zimin, V.Yu. Lebed, I.E. Malinovskii
Bright visible light emission from electro-oxidized porous silicon: A quantum confinement effect, Pages 593-602, J.C. Vial, S. Billat, A. Bsiesy, G. Fishman, F. Gaspard, R. Hérino, M. Ligeon, F. Madéore, I. Mihalcescu, F. Muller, R. Romestain
Luminescence decay of porous silicon, Pages 603-607, X. Chen, D. Uttamchandani, D. Sander, K.P. O'donnell
List of contributors, Pages 609-611
Subject index, Pages 613-616