Vapour Growth and Epitaxy. Proceedings of the Third International Conference on Vapour Growth and Epitaxy, Amsterdam, The Netherlands, 18–21 August 1975

Content: 
Copyright, Page iv
Front Matter, Page v
Inside Front Cover, Page vii
PREFACE, Pages ix-x, The Editors
CRYSTAL GROWTH FROM THE VAPOUR PHASE: CONFRONTATION OF THEORY WITH EXPERIMENT, Pages 3-19, P. BENNEMA, C. VAN LEEUWEN
FUNDAMENTAL ASPECTS OF VLS GROWTH, Pages 20-30, E.I. GIVARGIZOV
COMPLEXES IN THE VAPOUR PHASE AND THEIR IMPLICATIONS FOR VAPOUR GROWTH, Pages 31-35, Harald SCHÄFER
CRYSTAL GROWTH AND TRANSPORT RATES OF GeSe AND GeTe IN MICRO-GRAVITY ENVIRONMENT, Pages 36-43, Heribert WIEDEMEIER, Frederick C. KLAESSIG, Eugene A. IRENE, Song J. WEY
STRUCTURE OF AUTOEPITAXIAL DIAMOND FILMS, Pages 44-48, B.V. DERJAGUIN, B.V. SPITSYN, A.E. GORODETSKY, A.P. ZAKHAROV, L.L. BOUILOV, A.E. ALEKSENKO
DARSTELLUNG VON VO2-EINKRISTALLEN DER OBEREN UND UNTEREN PHASENGRENZE DURCH CHEMISCHEN TRANSPORT, Pages 49-55, H. OPPERMANN, W. REICHELT, E. WOLF
THE MORPHOLOGY OF Zn3P2 SINGLE CRYSTALS GROWN FROM THE VAPOUR PHASE, Pages 56-59, W. ZDANOWICZ, K. KLOC, A. KALIŃSKA, E. CISOWSKA, A. BURIAN
MORPHOLOGY OF CHEMICAL VAPOR DEPOSITED TITANIUM DIBORIDE, Pages 60-65, T.M. BESMANN, K.E. SPEAR
A MODEL FOR THE GROWTH OF ANOMALOUS POLYTYPE STRUCTURES IN VAPOUR GROWN SiC, Pages 66-71, Dhananjai PANDEY, P. KRISHNA
EPITAXIAL GROWTH OF α-SiC LAYERS BY CHEMICAL VAPOR DEPOSITION TECHNIQUE, Pages 72-75, Hiroyuki MATSUNAMI, Shigehiro NISHINO, Masanori ODAKA, Tetsuro TANAKA
HOMOGENEOUS NUCLEATION IN A FREE ARGON JET; OBSERVATION OF CLUSTERS BY ELECTRON DIFFRACTION, Pages 79-86, J. FARGES
THERMODYNAMICS AND KINETICS OF THE FIRST MONOLAYER ADSORPTION OF XENON ON THE (0001) GRAPHITE FACE, Pages 87-91, J. SUZANNE, J.P. COULOMB, M. BIENFAIT
MODIFICATIONS OF EPITAXY IN EVAPORATED FILMS BY ELECTRIC CHARGE EFFECTS, Pages 92-97, Goro SHIMAOKA
DECOMPOSITION OF METHANE ON A HOT CARBON SURFACE AFTER MULTIPLE COLLISIONS, Pages 98-100, D. KÜPPERS, H. LYDTIN
FORMATION AND PROPERTIES OF TRANSITION LAYERS IN EPITAXIAL FILMS, Pages 103-112, L.N. ALEKSANDROV
EPITAXY IN SOLAR CELLS, Pages 113-121, Sigurd WAGNER
KINETIC STUDIES OF THE GROWTH OF III–V COMPOUNDS USING MODULATED MOLECULAR BEAM TECHNIQUES, Pages 122-129, B.A. JOYCE, C.T. FOXON
KINETIC ASPECTS IN THE VAPOUR PHASE EPITAXY OF III–V COMPOUNDS, Pages 130-141, Don W. SHAW
A THEORETICAL TREATMENT OF GaAs GROWTH BY VAPOUR PHASE TRANSPORT FOR {001} ORIENTATION, Pages 142-146, R. CADORET, M. CADORET
HETEROEPITAXIAL GROWTH OF GaP ON SILICON, Pages 147-157, J.P. ANDRÉ, J. HALLAIS, C. SCHILLER
EPITAXIAL GROWTH ON OPTICAL GRATINGS FOR DISTRIBUTED FEEDBACK GaAs INJECTION LASERS, Pages 158-164, M. ILEGEMS, H.C. CASEY, S. SOMEKH, M.B. PANISH
GROWTH AND CHARACTERIZATION OF GaP AND GaAs1–xPx, Pages 165-171, F.P.J. KUIJPERS, L. BLOK, A.T. VINK
DEVICE QUALITY EPITAXIAL GALLIUM ARSENIDE GROWN BY THE METAL ALKYL-HYDRIDE TECHNIQUE, Pages 172-178, S.J. BASS
RATE DETERMINING PROCESSES OF GASEOUS TRANSPORT IN A Ga–As–Cl CLOSED TUBE SYSTEM, Pages 179-182, Hisatsune WATANABE, Tatau NISHINAGA, Tetsuya ARIZUMI
DOPING BEHAVIOR OF SILICON IN VAPOR-GROWN III–V EPITAXIAL FILMS, Pages 183-189, H.B. POGGE, B.M. KEMLAGE
MULTILAYERED STRUCTURES OF EPITAXIAL INDIUM PHOSPHIDE, Pages 190-196, R.C. CLARKE, L.L. TAYLOR
HIGH PRESSURE SOLUTION GROWTH OF GaN, Pages 197-203, R. MADAR, G. JACOB, J. HALLAIS, R. FRUCHART
ÉPITAXIE EN PHASE LIQUIDE DES COMPOSÉS III–V SUR SUBSTRAT InP, Pages 204-209, N.T. LINH, J.-P. HOMBROUCK, N. SOL
ON THE KINETICS OF NITROGEN INCORPORATION IN GaP LPE LAYERS USING NH3 VAPOUR DOPING, Pages 210-214, C.J. WERKHOVEN, R.C. PETERS
NEARLY PERFECT CRYSTAL GROWTH OF III–V COMPOUNDS BY THE TEMPERATURE DIFFERENCE METHOD UNDER CONTROLLED VAPOUR PRESSURE, Pages 215-222, J. NISHIZAWA, Y. OKUNO, H. TADANO
INTERFACIAL LATTICE MISMATCH EFFECTS IN III–V COMPOUNDS, Pages 223-239, G.H. OLSEN
CHARACTERIZATION OF THE INTERFACE REGION IN VPE GaAs, Pages 240-243, A. SHIBATOMI, N. YOKOYAMA, H. ISHIKAWA, K. DAZAI, O. RYUZAN
CHARACTERIZATION OF DEFECTS IN GaP and GaAsP GRADED HETEROJUNCTIONS BY TRANSMISSION ELECTRON MICROSCOPY, Pages 244-249, M. DUPUY, D. LAFEUILLE
CHARACTERIZATION OF VAPOR GROWN (001) GaAs1–xPx LAYERS BY SELECTIVE PHOTO-ETCHING, Pages 250-255, L. BLOK
EQUILIBRIUM AND KINETICS IN THE CHEMICAL VAPOUR DEPOSITION OF SILICON, Pages 256-263, J. BLOEM
INELASTIC LIGHT SCATTERING STUDIES OF SILICON CHEMICAL VAPOR DEPOSITION (CVD) SYSTEMS, Pages 264-273, T.O. SEDGWICK, J.E. SMITH Jr., R. GHEZ, M.E. COWHER
THE EFFECT OF RAPID EARLY GROWTH ON THE PHYSICAL AND ELECTRICAL PROPERTIES OF HETEROEPITAXIAL SILICON, Pages 274-283, G.W. CULLEN, J.F. CORBOY, R.T. SMITH
THE CHEMISTRY AND TRANSPORT PHENOMENA OF CHEMICAL VAPOR DEPOSITION OF SILICON FROM SiCl4, Pages 284-289, Vladimir S. BAN, Stephen L. GILBERT
ANISOTROPY IN THE GROWTH RATES OF SILICON DEPOSITED BY REDUCTION OF SILICON TETRACHLORIDE, Pages 290-298, J. NISHIZAWA, Y. KATO, M. SHIMBO
GROWTH AND ETCHING OF SILICON IN CHEMICAL VAPOUR DEPOSITION SYSTEMS; THE INFLUENCE OF THERMAL DIFFUSION AND TEMPERATURE GRADIENT, Pages 299-307, P. VAN DER PUTTE, L.J. GILING, J. BLOEM
CONTROL OF SLIP IN HORIZONTAL SILICON EPITAXY WITH PROFILED SUSCEPTORS, Pages 308-311, A.H. GOEMANS, L.J. VAN RUYVEN
SELECTIVE ETCHING AND EPITAXIAL REFILLING OF SILICON WELLS IN THE SYSTEM SiH4/HCl/H2, Pages 312-316, Manfred DRUMINSKI, Roland GESSNER
THE INCORPORATION OF PHOSPHORUS IN SILICON; THE TEMPERATURE DEPENDENCE OF THE SEGREGATION COEFFICIENT, Pages 317-322, L.J. GILING, J. BLOEM
VAPOUR PHASE EPITAXY OF II–VI COMPOUNDS: A REVIEW, Pages 323-332, H. HARTMANN
SYNTHESIS AND EPITAXIAL GROWTH OF CdTe FILMS BY NEUTRAL AND IONIZED BEAMS, Pages 333-338, Ryuzo UEDA
THE EPITAXIAL GROWTH OF THICK SMOOTH FILMS OF ZnS ON GaAs, Pages 339-344, P.M.R. KAY, P. LILLEY
GROWTH MECHANISM AND STRUCTURE OF ADSORBED LAYERS ON METALS, Pages 345-352, J. OUDAR, M. HUBER
EPITAXIAL GROWTH IN THE (111)Ag/Cu AND (111)Au/Cu SYSTEMS, Pages 353-357, R.W. VOOK, C.T. HORNG, J.E. MACUR
LIQUID PHASE EPITAXY OF MAGNETIC GARNETS, Pages 358-365, E.A. GIESS
LPE GROWTH OF YLaTm AND YLaEu GARNET FILMS, Pages 366-370, B.F. STEIN, M. KESTIGIAN
NEW FLUX SYSTEMS FOR THE LPE GROWTH OF THIN GARNET FILMS, Pages 371-374, J.M. ROBERTSON, J.C. BRICE
A NEW METHOD OF STIRRING FOR LPE GROWTH, Pages 375-379, J.C. BRICE, J.M. ROBERTSON, H. van der HEIDE
THERMALLY ACTIVATED STRESS RELIEF IN GARNET LAYERS GROWN BY LIQUID PHASE EPITAXY, Pages 380-386, W.T. STACY, A.B. VOERMANS
SECONDARY ION MASS SPECTROMETRY OF COMPOSITIONAL CHANGES IN GARNET FILMS, Pages 387-391, H.D. JONKER, A.E. MORGAN, H.W. WERNER
AUTHOR INDEX, Pages 393-396
SUBJECT INDEX, Pages 397-398