The Physics of MOS Insulators. Proceedings of the International Topical Conference on the Physics of MOS Insulators Held at the Jane S. Mc: Kimmon Conference Center, North Carolina State University, Raleigh, North Carolina, June 18–20, 1980

Content: 
CONFERENCE CHAIRMAN, Page ii
Front Matter, Page iii
Copyright, Page iv
FOREWORD, Page v, Gerald Lucovsky
HIGH CURRENT INJECTION INTO SiO2 USING Si-RICH SiO2 FILMS AND EXPERIMENTAL APPLICATIONS, Pages 1-18, D.J. DiMaria
HIGH FIELD CONDUCTION IN THICK OXIDE MNOS CAPACITORS ON P-TYPE SILICON, Pages 19-23, I. Kashat, N. Klein
DIELECTRIC BREAKDOWN IN THERMAL SiO2 GROWN FROM DOPED POLY CRYSTALLINE SILICON THIN FILMS, Pages 24-28, Michael Berberian
THE EFFECT OF DIFFUSION ON THE PHOTOCONDUCTIVITY OF THIN FILMS, Pages 29-33, R.C. Hughes, R.J. Sokel
THE KINETIC BEHAVIOUR OF MOBILE IONS IN SiO2 STUDIED WITH TSIC AND TVS MEASUREMENTS, Pages 34-38, Ji Li-jiu, Wang Yang-yuan, Zhang Li-chun, Ni Xuie-win
INTERACTIONS BETWEEN SMALL-POLARONIC PARTICLES IN SOLIDS, Pages 39-43, David Emin
SMALL POLARON HOPPING WITHOUT TRAP PARTICIPATION IN DISPERSIVE TRANSIENT TRANSPORT IN SiO2 OF MOS STRUCTURES, Pages 44-48, K.L. Ngai, Xiyi Huang, Fu-sui Liu
ELECTRON TRANSPORT IN SiO2 FILMS AT LOW TEMPERATURES, Pages 49-53, Siegfried Othmer, J.R. Srour
PHYSICAL EFFECTS IN LATERAL MIS STRUCTURES WITH ULTRA-THIN OXIDES, Pages 54-58, Jerzy Ruzyllo
OXYGEN AS A TWO-LEVEL TUNNELING SYSTEM IN SiO2, Pages 59-62, W. Beall Fowler, Arthur H. Edwards
PERIODIC STRUCTURAL MODELS AND RADIAL DISTRIBUTION FUNCTIONS OF SiOX: x=0. to 2., Pages 63-67, W.Y. Ching
THE OPTICAL ABSORPTION EDGE OF SiO2, Pages 68-72, R.B. Laughlin
BAND STRUCTURE AND DENSITY OF STATES OF β-SILICON NITRIDE, Pages 73-76, Shang-Yuan Ren, W.Y. Ching
ELECTRON MICROSCOPY AND RAMAN SPECTROSCOPY OF Nb2O5, Ta2 O5 and Si3N4 THIN FILMS, Pages 77-81, Frank L. Galeener, Wolfgang Stutius, Grady T. McKinley
PHONONS AND SUBMICROCRYSTALLITES IN AMORPHOUS SiO2, Pages 82-86, Klaus Hübner, Annemarie Lehmann, Lutz Schumann
CHEMICAL BONDING IN SiO, Pages 87-91, Guy Hollinger
STRUCTURAL AND BOND FLEXIBILITY OF VITREOUS SiO2 FILMS, Pages 92-96, A.G. Revesz, G.V. Gibbs
ELECTRON-TRANSFER MODEL FOR E'-CENTER OPTICAL ABSORPTION IN SiO2, Pages 97-101, David L. Griscom, W. Beall Fowler
ASSIGNMENT OF THE OPTICAL ABSORPTION OF THE CENTER IN SiO2, Pages 102-106, O.F. Schirmer
ELECTRONIC STRUCTURE OF VACANCIES AND INTERSTITIALS IN SiO2, Pages 107-111, Frank Herman, Douglas J. Henderson, Robert V. Kasowski
SURFACE AND BULK VIBRATIONS IN ION-IMPLANTED AMORPHOUS SILICA, Pages 112-116, G.W. Arnold
ENERGY DISTRIBUTION OF ELECTRON TRAPPING DEFECTS IN THICK-OXIDE MNOS STRUCTURES, Pages 117-121, V.J. Kapoor, S.B. Bibyk
TRAPS IN SiO2-Si STRUCTURE DETERMINED BY ELECTROCHEMICAL METHOD, Pages 122-126, Andrzej Wolkenberg
CHARGE TRAPPING AND ASSOCIATED LUMINESCENCE IN MOS OXIDE LAYERS, Pages 127-131, C. Falcony-Guajardo, F.J. Feigl, S.R. Butler
TIME DECAY OF PHOTOLUMINESCENCE FROM AMORPHOUS SiO2, Pages 132-136, C.M. Gee, Marc Kastner
ELECTRON-BEAM-INDUCED LUMINESCENCE IN SiO2, Pages 137-141, S.W. McKnight
PHOTOIONIZATION CROSS SECTION OF THE 2.5 eV ELECTRON TRAP IN SiO2, Pages 142-146, D.D. Rathman, F.J. Feigl, S.R. Butler, W.B. Fowler
HYDROGENATION OF AMORPHOUS SILICON NITRIDE, Pages 147-151, H.J. Stein, P.S. Peercy, D.S. Ginley
INITIAL OXIDATION OF ION-SPUTTERED SILICON (100), Pages 152-156, D.L. Ellsworth, C.W. Wilmsen
FIXED SURFACE CHARGE DENSITY GENERATION AT THE INTERFACE OF ANODIC SIO2-Si SYSTEMS, Pages 157-161, J.L. Martínez, E. Gómez
TRACER MEASUREMENTS OF NETWORK OXYGEN EXCHANGE DURING WATER DIFFUSION IN SiO2 FILMS, Pages 162-166, Robert Pfeffer, Milton Ohring
AN 18O STUDY OF THE OXYGEN EXCHANGE IN SILICON OXIDE FILMS DURING THERMAL TREATMENT IN WATER VAPOR, Pages 167-171, S. Rigo, F. Rochet, A. Straboni, B. Agius
X-RAY PHOTOELECTRON SPECTROSCOPY OF SILOXENE: A MODEL COMPOUND REPRESENTING INTERMEDIATE OXIDATION STATES OF SILICON AND INTERFACE DEFECT SITES, Pages 172-176, J.A. Wurzbach
EFFECT OF ANNEALING IN O2/N2 MIXTURE ON THE MOS CHARACTERISTICS, Pages 177-180, A.K. AboulSeoud, S. Masoud
CHEMICAL REACTIONS IN NATIVE OXIDE FILMS FORMED ON III-V SEMICONDUCTORS, Pages 181-190, G.P. Schwartz
ANODIC OXIDE INSULATORS ON InP AND InAs, Pages 191-196, D.A. Baglee, D.H. Laughlin, C.W. Wilmsen, D.K. Ferry
OPTICAL PROPERTIES AND INTERFACE ANALYSIS OF THE GaAs-ANODIC OXIDE SYSTEM, Pages 197-201, D.E. Aspnes, G.J. Gualtieri, B. Schwartz, G.P. Schwartz, A.A. Studna
XPS STUDY OF GaAs (100) SURFACE OXIDE CHEMISTRY AND INTERFACE POTENTIAL, Pages 202-206, R.W. Grant, S.P. Kowalczyk, J.R. Waldrop, W.A. Hill
GERMANIUM (OXY)NITRIDE BASED SURFACE PASSIVATION TECHNIQUE AS APPLIED TO GaAs & InP, Pages 207-211, B. Bayraktaroglu, R.L. Johnson, D.W. Langer, M.G. Mier
KrF–LASER ANNEALING OF NATIVE OXIDES ON GaAs, Pages 212-216, R.K. Ahrenkiel, G. Anderson, D. Dunlavy, C. Maggiore, R.B. Hammond, S. Stotlar
ANODIC OXIDATION OF Hg0.68 Cd0.32 Te, Pages 217-220, Bruce K. Janousek, Michael J. Daugherty, Richard B. Schoolar
CHEMICAL BONDING AT METAL/SiO2/Si(111) INTERFACES, Pages 221-226, R.S. Bauer, R.Z. Bachrach, L.J. Brillson
DIPOLE LAYERS AT THE GOLD-SiO2 INTERFACE, Pages 227-231, T.W. Hickmott
MEASUREMENT OF TUNNELING INTO INTERFACE STATES, Pages 232-235, Walter E. Dahlke, David W. Greve
IMPROVED EXPERIMENTAL CHARACTERIZATION OF THE Si/SiO2 INTERFACE, Pages 236-240, A. Sher, Y.H. Tsuo, Pin Su, W.E. Miller
GAP STATES OF CRYSTALLINE SILICON AND AMORPHOUS SiO2 SYSTEM, Pages 241-245, Takayasu Sakurai, Takuo Sugano
INTERFACE WIDTH AND STRUCTURE OF THE SiO2 LAYER ON OXIDIZED Si, Pages 246-249, H. Frenzel, P. Balk
CHEMICAL COMPOSITION AND KINETIC LAW OF THE SiO2/Si INTERFACE, Pages 250-254, Amelia Lora-Tamayo, Enrique Dominguez, Emilio Lora-Tamayo, Andrés Payo
AUGER ANALYSIS COUPLED WITH CAPACITANCE STUDIES OF THE Si-SiO2 INTERFACE, Pages 255-259, M. Hirose, S. Sakano, Y. Osaka, T. Hattori
SOME METAL - SILICON DIOXIDE INTERFACE PHENOMENA, Pages 260-264, Christer M Svensson
FIELD EFFECT SPECTROSCOPY OF SEMICONDUCTOR-INSULATOR INTERFACE STATES USING THIN FILM TRANSISTOR STRUCTURES, Pages 265-269, L.J. Brillson, F. Luo, J. Wysocki
THE PROPERTIES AND APPLICATIONS OF GaAs AND InP MIS STRUCTURES, Pages 270-274, D.L. Lile, H.H. Wieder
A STUDY OF THE ELECTRONIC STRUCTURE OF THE GaAs/NATURAL OXIDE INTERFACE, Pages 275-279, E.W. Kreutz, P. Schroll
INTERFACE STATES IN GaAs/LaF3 CONFIGURATIONS, Pages 280-284, A. Sher, Y.H. Tsuo, J.E. Chern, W.E. Miller
GENERATION OF INTERFACE STATES IN THE Si-SiO2 SYSTEM BY PHOTOINJECTION OF ELECTRONS, Pages 285-289, Stella Pang, S.A. Lyon, Walter C. Johnson
REDUCED OXIDATION STATES AND RADIATION-INDUCED TRAP GENERATION AT Si/SiO2 INTERFACE, Pages 290-295, F.J. Grunthaner, B.F. Lewis, R.P. Vasquez, J. Maserjian, A. Madhukar
STUDIES OF ELECTRON-BEAM RADIATION AND HYDROGENATION EFFECTS ON Si-SiO2 INTERFACE AND SiO2 BY XPS, Pages 296-300, Takeo Hattori, Takashi Totsuka, Toshihisa Suzuki
A MICROSCOPIC MODEL FOR THE Qss DEFECT AT THE Si/SiO2 INTERFACE, Pages 301-305, Gerald Lucovsky, D.J. Chadi
EPR DEFECTS AND INTERFACE STATES ON OXIDIZED (111) AND (100) SILICON, Pages 306-310, P.J. Caplan, E.H. Poindexter, B.E. Deal, R.R. Razouk
CHARACTERISTIC DEFECTS AT THE Si-SiO2 INTERFACE, Pages 311-315, N.M. Johnson, D.K. Biegelsen, M.D. Moyer
IMPURITY SEGREGATION AT THE Si/SiO2 INTERFACE, Pages 316-320, R.W. Barton, J. Rouse, S.A. Schwarz, C.R. Helms
INVESTIGATION OF HYDROGEN AND CHLORINE AT THE SiO2/Si INTERFACE, Pages 321-325, I.S.T. Tsong, M.D. Monkowski, J.R. Monkowski, P.D. Miller, C.D. Moak, B.R. Appleton, A.L. Wintenberg
SURFACE-POTENTIAL DEPENDENCE OF EPR CENTERS AT THE Si/SiO2 INTERFACE, Pages 326-330, E.H. Poindexter, P.J. Caplan, J.J. Finnegan, N.M. Johnson, D.K. Biegelsen, M.D. Moyer
ELECTRON BEAM INDUCED DEFECTS AT Si-SiO2 INTERFACE, Pages 331-335, E. Rosencher, A. Chantre, D. Bois
Anomalous gate current on avalanche hot electron injection in MOS structures, Pages 336-340, Kikuo Yamabe, Yoshio Miura
NOISE FROM MOS TRANSISTORS AT WEAK AND UNIFORM INVERSION, Pages 341-343, A.A. WALMA
POLYMERIZED LANGMUIR FILM MIS STRUCTURES, Pages 344-348, K.K. Kan, M.C. Petty, G.G. Roberts
MOS WEAROUT AND BREAKDOWN STATISTICS, Pages 349-352, D. Wolters, T. Hoogestyn, H. Kraaij
EFFECT OF PREPARATION METHODS ON PERFORMANCE OF MOS PHOTOVOLTAIC SOLAR CELL, Pages 353-357, Fouad Abou-Elfotouh, Mohammad Al-Mass'ari
LIST OF PARTICIPANTS, Pages 359-367
AUTHOR INDEX, Pages 368-369