Technology evolution for silicon nano-electronics : selected, peer reviewed papers from the proceedings of the International Symposium on Technology Evolution for Silicon Nano-Electronics 2010, June 3-5, 2010, Tokyo Institute of Technology, Tokyo, Japan

 Content: High Mobility Ge-Based CMOS Device Technologies --
 SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-On-Insulator --
 Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Devices --
 Functional Device Applications of Nanosilicon --
 Tunable Single-Electron Turnstile Using Discrete Dopants in Nanoscale SOI-FETs --
 KFM Observation of Electron Charging and Discharging in Phosphorus-Doped SOI Channel --
 Photoluminescence Characteristics of Ultra-Thin Silicon-on-Insulator at Low Temperatures --
 Investigation about I-V Characteristics in a New Electronic Structure Model of the Ohmic Contact for Future Nano-Scale Ohmic Contact --
 Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure --
 Electronic Structure and Spin-Injection of Co-Based Heusler Alloy/ Semiconductor Junctions --
 First-Principles Calculations of the Dielectric Constant for the GeO2 Films --
 Nanosize Electronics Material Analysis by Local Quantities Based on the Rigged QED Theory --
 Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors --
 Effect of Al2O3 Deposition and Subsequent Annealing on Passivation of Defects in Ge-Rich SiGe-on-Insulator --
 Controlled Synthesis of Carbon Nanowalls for Carbon Channel Engineering --
 Resistive Memory Utilizing Ferritin Protein with Nano Particle --
 Atomically Controlled Plasma Processing for Group IV Quantum Heterostructure Formation --
 Nanometer-Scale Characterization Technique for Si Nanoelectric Materials Using Synchrotron Radiation Microdiffraction --
 Generation and Growth of Atomic-Scale Roughness at Surface and Interface of Silicon Dioxide Thermally Grown on Atomically Flat Si Surface --
 Nano-Surface Modification of Silicon with Ultra-Short Pulse Laser Process --
 Evaluation of Strained Silicon by Electron Back Scattering Pattern Compared with Raman Measurement and Edge Force Model Calculation --
 Development of New Methods for Fine-Wiring in Si Using a Wet Catalytic Reaction --
 Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures --
 Energy Band Engineering of Metal Nanodots for High Performance Nonvolatile Memory Application --
 Strained Ge and Ge1-xSnx Technology for Future CMOS Devices --
 Improved Electrical Properties and Thermal Stability of GeON Gate Dielectrics Formed by Plasma Nitridation of Ultrathin Oxides on Ge(100) --
 Structural Change during the Formation of Directly Bonded Silicon Substrates --
 Microscopic Structure of Directly Bonded Silicon Substrates --
 Formation of Nanotubes of Carbon by Joule Heating of Carbon-Contaminated Si Nanochains --
 Si Nanodot Device Fabricated by Thermal Oxidation and their Applications --
 Influences of Carrier Transport on Drain-Current Variability of MOSFETs --
 Resistive Switching in NiO Bilayer Films with Different Crystallinity Layers --
 Analysis of Threshold Voltage Variations in Fin Field Effect Transistors --
 Capture/Emission Processes of Carriers in Heterointerface Traps Observed in the Transient Charge-Pumping Characteristics of SiGe/Si-Hetero-Channel pMOSFETs --
 Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction --
 Effect of Back Bias on Variability in Intrinsic Channel SOI MOSFETs --
 Discrete Dopant Effects on Threshold Voltage Variation in Double-Gate and Gate-All-Around Metal-Oxide-Semiconductor Field-Effect-Transistors --
 Interconnect Design Challenges in Nano CMOS Circuit.