SOI Lubistors: Lateral, Unidirectional, Bipolar-type Insulated-gate Transistors

SOI Lubistors: Lateral, Unidirectional, Bipolar-Type Insulated-Gate Transistors......Page 1
Contents......Page 7
Preface......Page 15
Acknowledgements......Page 17
Introduction to an Exotic Device World......Page 19
Part One: Brief Review and Modern Applications of pn-Junction Devices......Page 21
1 Concept of an Ideal pn Junction......Page 23
References......Page 24
2.1 Introduction......Page 27
2.2.1 Assumptions......Page 28
2.2.2 Model A – Low Doping Case......Page 29
2.2.3 Model B – High Doping Case......Page 38
2.3.1 Model A – Low Doping Case......Page 44
2.3.2 Model B – High Doping Case......Page 45
2.4.1 The Positive Gate Voltage Condition......Page 52
2.5 The Insulated-Gate pn Junction of the SOI Lubistor – Reverse Bias......Page 55
References......Page 57
3 Modern Applications of the pn Junction......Page 59
References......Page 60
Part Two: Physics and Modeling of SOI Lubistors – Thick-Film Devices......Page 61
4.2 Device Structure and Parameters......Page 63
4.3 Discussion of Current–Voltage Characteristics......Page 65
References......Page 67
5.2 Experimental Apparatus......Page 69
5.3 Current–Voltage Characteristics of Lubistors......Page 72
5.4 Lubistor Potential Profiles and Features......Page 76
5.5.1 Simplified Analysis of Lubistor Operation......Page 77
5.5.2 On the Design of Lubistors......Page 80
References......Page 81
6.2 Device Structure and Measurement System......Page 83
6.3.1 Device Simulation......Page 85
6.3.2 Equivalent Circuit Models......Page 88
6.4 Summary......Page 92
References......Page 93
7.2.1 Device Structure......Page 95
7.3.1 I–V Characteristics of an SOI Lubistor and a Simple Analytical Model......Page 97
7.3.2 Noise Spectral Density of SOI Lubistors and Their Feature......Page 101
7.3.3 Advanced Analysis of Anode Noise Spectral Density......Page 103
References......Page 106
8.1 Introduction......Page 109
8.2 Physical Model for the Transition Layer......Page 110
8.3.1 A Structure to Evaluate Capacitance......Page 113
8.3.2 Numerical Simulation Technique......Page 114
8.4 Device Fabrication......Page 115
8.5.1 Electrode-to-Electrode Capacitance Dependence on Frequency......Page 116
8.5.2 Drain-to-Substrate Capacitance Dependence on Bias......Page 118
8.6 Summary......Page 121
References......Page 122
Part Three: Physics and Modeling of SOI Lubistors – Thin-Film Devices......Page 123
9.2 Device Fabrication and Measurements......Page 125
9.3 Results and Discussion......Page 126
References......Page 129
10.2 Experiments......Page 131
10.2.2 Cathode Common Configuration......Page 133
10.3.1 Fundamental Models......Page 134
10.3.2 Theoretical Simulations......Page 138
Appendix 10A: Intrinsic Carrier Concentration (niq) and the Fermi Level in 2DSS......Page 142
References......Page 145
11.1 Introduction......Page 147
11.2.1 Junction Current Dependence on Anode Voltage......Page 148
11.2.2 Junction Current Dependence on Gate Voltage......Page 152
11.3.2 Theoretical Formulations of Tunneling Current and Discussion......Page 154
11.4 Summary......Page 160
References......Page 161
12.1 Introduction......Page 163
12.2 Device Structures and Experimental Apparatus......Page 164
12.3.1 I–V Characteristics under the Reverse-Biased Condition......Page 165
Appendix 12A: Derivation of Equations (12.6) and (12.9)......Page 171
References......Page 173
13.2 Device Structures and Bias Configuration......Page 175
13.3 Results and Discussion......Page 176
13.4 Summary......Page 177
References......Page 178
14.3.1 ID–VG and IG–VG Characteristics of the Ultra-Thin-Body DT-MOSFET......Page 179
14.4.1 ID–VG and gm–VG Characteristics of the Ultra-Thin-Body DT-MOSFET......Page 182
14.4.2 Difference of Bipolar Operation between the n-Channel DT-MOS and the p-Channel DT-MOS......Page 183
14.4.3 Impact of Body Thickness on Bipolar Operation......Page 184
References......Page 186
15.2 Device Structures and Parameters......Page 187
15.3.1 SOI MOSFET Mode and DT-MOSFET Mode......Page 189
15.3.2 Temperature Evolution of Transconductance (gm) Characteristics and Impact of Channel Length on gm Characteristics......Page 190
15.4 Summary......Page 193
References......Page 194
Part Four: Circuit Applications......Page 197
16.1 Introduction......Page 199
16.2.1 Device Structure and Device Simulation......Page 200
16.3 ESD Protection Circuit......Page 203
16.4 Direct Current Characteristics of the ESD Protection Devices and Their SPICE Models......Page 206
16.5 ESD Event and Performance Evaluation of an ESD Protection Circuit......Page 209
References......Page 216
17.2.1 Device Structure and Fundamental Characteristics......Page 219
17.2.2 Device Model for the Lubistor......Page 221
17.2.3 Proposal of a New Logic Element......Page 223
17.3.1 Examples of Fundamental Elements for Circuit Applications......Page 226
References......Page 231
18.1 Review of Bandgap Reference......Page 233
18.2 Challenging Study of Sub-1-V Voltage Reference......Page 234
References......Page 235
19 Possible Implementation of SOI Lubistors into Conventional Logic Circuits......Page 237
References......Page 238
Part Five: Optical Device Applications of SOI Lubistors......Page 241
20.1 Introduction......Page 243
20.2 Characterization of the Quasi-One-Dimensional Photonic Crystal Waveguide......Page 244
20.3 Electro-Optic Modulator Based on the SOI Waveguide......Page 250
20.4 Summary......Page 253
References......Page 254
Part Six: SOI Lubistor as a Testing Tool......Page 255
21 Principles of Parameter Extraction......Page 257
References......Page 259
22.2 Experimental and Simulation Details......Page 261
22.3 Results and Discussion......Page 263
References......Page 266
Part Seven: Future Prospects......Page 267
23.2 i-MOS Transistor......Page 269
23.3 Tunnel FET......Page 271
23.4 Feedback FET......Page 274
23.5 Potential of Offset-Gate Lubistor......Page 276
23.7 Future of the pn Junction......Page 278
References......Page 279
24.2 Theoretical Formulation of the Avalanche Phenomenon in Direct-Bandgap Semiconductors......Page 281
24.3 Theoretical Formulation of the Avalanche Phenomenon in Indirect-Bandgap Semiconductors......Page 284
24.4 Theoretical Consideration of the Avalanche Phenomenon in a One-Dimensional Wire pn Junction......Page 285
References......Page 289
Part Eight: Summary of Physics for Semiconductor Devices and Mathematics for Device Analyses......Page 291
25.1 Free Carrier Concentration and the Fermi Level in Semiconductors......Page 293
25.3 Drift and Diffusion of Carriers and Current Continuity in Semiconductors......Page 295
25.4 Stationary-State Schr€odinger Equation to Analyze Quantum-Mechanical Effects in Semiconductors......Page 296
25.5 Time-dependent Schr€odinger Equation to Analyze Dynamics in Semiconductors......Page 297
25.6 Quantum Size Effects in Nano-Scale Semiconductors......Page 298
25.7 Tunneling through Energy Barriers in Semiconductors......Page 301
25.8 Low-Dimensional Tunneling in Nano-Scale Semiconductors......Page 302
25.9.1 Fundamental Formulations......Page 304
25.9.2 Interband Transition – Direct Bandgap......Page 305
25.9.3 Interband Transition – Indirect Bandgap......Page 306
References......Page 307
26.1 Linear Differential Equation......Page 309
26.2 Operator Method......Page 310
26.3 Klein–Gordon-Type Differential Equation......Page 311
References......Page 312
Bibliography......Page 313
Index......Page 315