Simulation of Semiconductor Processes and Devices 2007: SISPAD 2007

Front Matter....Pages i-xv
Nanomanufacturing Technology and Opportunities Through Physically-Based Simulation....Pages 1-8
Atomistic Modeling of Defect Diffusion in SiGe....Pages 9-12
Diffusion and Deactivation of As in Si: Combining Atomistic and Continuum Simulation Approaches....Pages 13-16
Molecular Dynamics Modeling of Octadecaborane Implantation into Si....Pages 17-20
High Performance, Strained-Ge, Heterostructure p-MOSFETs....Pages 21-24
Strain Induced Drain-Current Enhancement Mechanism in Short-Channel Bulk Ge-pMOSFETs with Different Channel and Surface Orientations....Pages 25-28
Validation of the Effect of Full Stress Tensor in Hole Transport in Strained 65nm-Node pMOSFETs....Pages 29-32
Modeling and Characterization of Advanced Phosphorus Ultra Shallow Junction Using Germanium and Carbon Coimplants....Pages 33-36
Intrinsic Stress Build-Up During Volmer-Weber Crystal Growth....Pages 37-40
Strain Energy Driven and Curvature Driven Grain Boundary Migration in 3D-IC Cu Vias....Pages 41-44
Modeling of Re-Sputtering Induced Bridge of Tungsten Bit-Lines for NAND Flash Memory Cell with 37nm Node Technology....Pages 45-48
Efficient Mask Design for Inverse Lithography Technology Based on 2D Discrete Cosine Transformation (DCT)....Pages 49-52
Modeling of Deep Reactive Ion Etching in a Three-Dimensional Simulation Environment....Pages 53-56
Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs....Pages 57-60
Surface Roughness Scattering in Ultrathin-Body SOI MOSFETs....Pages 61-64
Pearson Effective Potential vs. Multi-Subband Monte-Carlo Simulation for Electron Transport in DG nMOSFETs....Pages 65-68
Inclusion of the Pauli Principle in the Langevin-Boltzmann Equation for Bulk Systems....Pages 69-72
Energy Conservation in Collisional Broadening....Pages 73-76
A Simple Technique for the Monte Carlo Simulation of Transport in Quantum Wells....Pages 77-80
Upcoming Challenges for Process Modeling....Pages 81-88
Physics-Based Simulation of 1/ f Noise in MOSFETs under Large-Signal Operation....Pages 89-92
Thin Body Effects to Suppress Random Dopant Fluctuations in Nano-Scaled MOSFETs....Pages 93-96
‘Atomistic’ Mesh Generation for the Simulation of Semiconductor Devices....Pages 97-100
Line Edge and Gate Interface Roughness Simulations of Advanced VLSI SOI-MOSFETs....Pages 101-104
Impact of Shear Strain and Quantum Confinement on <110> Channel nMOSFET with High-Stress CESL....Pages 105-108
Analysis of Novel Stress Enhancement Effect Based on Damascene Gate Process with eSiGe S/D for pFETs....Pages 109-112
Nonlinear Piezoresistance Effect in Devices with Stressed Etch Stop Liner....Pages 113-116
3D Stress, Process and Device Simulation: Extraction of the Relevant Stress Tensor....Pages 117-120
Impact of Two-Step Recessed SiGe S/D Engineering for Advanced pMOSFETs of 32 nm Technology Node and Beyond....Pages 121-124
Simulation Study of Multiple FIN FinFET Design for 32nm Technology Node and Beyond....Pages 125-128
Device Design and Scalability of an Impact Ionization MOS Transistor with an Elevated Impact Ionization Region....Pages 129-132
A Prototype Wafer Processing TCAD Tool Composed of BMD Simulation Module, Metal Gettering and Thermal Stress/Slip Functions for Scaled Device Design Phase....Pages 133-136
Compact Modeling of Phase-Change Memories....Pages 137-140
Modeling of NBTI Degradation for SiON pMOSFET....Pages 141-144
Modeling Study of Ultra-Thin Ge Layers Using Tight-Binding, LCBB and kp Methods....Pages 145-148
Analysis of Silicon Dioxide Interface Transition Region in MOS Structures....Pages 149-152
Tunneling Properties of MOS Systems Based on High-k Oxides....Pages 153-156
First-Principles Investigation on Oxide Trapping....Pages 157-160
A Self-Consistent Simulation of InSb Double-Gate MOSFETs Using Full-Band Tight-Binding Approach....Pages 161-164
Influence of Oxygen Composition and Carbon Impurity on Electronic Reliability of HfO 2 ....Pages 165-168
Upcoming Physics Challenges for Device Modeling....Pages 169-176
Transient Characterization of Interface Traps in 4H-SiC MOSFETs....Pages 177-180
Electro-Thermal, Transient, Mixed-Mode 2D Simulation Study of SiC Power Thyristors Operating Under Pulsed-Power Conditions....Pages 181-184
Numerical Design Study on the Optimal p-Emitter Thickness of 4H-SiC Bipolar Diodes....Pages 185-188
Study of Time-Periodic Avalanche Breakdown Occurring in VLD Edge Termination Structures....Pages 189-192
Simulation of Magnetotransport in Hole Inversion Layers Based on Full Subbands....Pages 193-196
Monte Carlo Study on Number of Scattering Events for Quasi-Ballistic Transport in MOSFETs....Pages 197-200
Modeling of Macroscopic Transport Parameters in Inversion Layers....Pages 201-204
Study of the Junction Depth Effect on Ballistic Current Using the Subband Decomposition Method....Pages 205-208
Transport in Silicon Nanowire and Single-Electron Transistors....Pages 209-215
Self-Consistent Simulations of Nanowire Transistors Using Atomistic Basis Sets....Pages 217-220
Full-Band Atomistic Study of Source-To-Drain Tunneling in Si Nanowire Transistors....Pages 221-224
Modeling Carbon Nanotube Electron-Phonon Resonances Shows Terahertz Current Oscillations....Pages 225-228
Crystalline Orientation Effects on Ballistic Hole Current in Ultrathin DG SOI MOSFETs....Pages 229-232
Numerical Simulation of Field Emission in the Surface Conduction Electron-Emitter Display....Pages 233-236
Microscopic Modelling of Quantum Well Solar Cells....Pages 237-240
Monte Carlo Simulation of Time-Dependent Operation of Quantum Cascade Lasers....Pages 241-244
Multiscale Simulation of Electronic and Optoelectronic Devices with TiberCAD....Pages 245-248
Hopping Transport of Electrons via Si-Dot....Pages 249-252
Simulation of Spin Transport Properties in Schottky Barrier FET Using Monte Carlo Method....Pages 253-256
Discontinuous Galerkin Solver for the Semiconductor Boltzmann Equation....Pages 257-260
Modeling of Shock Waves in Two-Dimensional Electron Channels: Effect of Tsunami....Pages 261-264
Simulation of Lag and Current Slump in AlGaN/GaN HEMTs as Affected by Buffer Trapping....Pages 265-268
Electrothermal Monte Carlo Study of Charge Confinement in GaN HFETs....Pages 269-272
Hydrodynamic Modeling of AlGaN/GaN HEMTs....Pages 273-276
Simulation of AlGaN/GaN HEMTs’ Breakdown Voltage Enhancement Using Grating Field Plates....Pages 277-280
Modelling of Hot Electron Effects in GaN/AlGaN HEMT with AlN Interlayer....Pages 281-284
Compact Modeling for New Transistor Structures....Pages 285-288
Compact Double-Gate MOSFET Model Correctly Predicting Volume-Inversion Effects....Pages 289-292
Modeling NAND Flash Memories for Circuit Simulations....Pages 293-296
Surface-Potential-Based Compact Model for Quantum Effects in Planar and Double-Gate MOSFET....Pages 297-300
Statistical Compact Model Parameter Extraction Strategy for Intrinsic Parameter Fluctuation....Pages 301-304
Calibrated Hydrodynamic Simulation of Deeply-Scaled Well-Tempered Nanowire Field Effect Transistors....Pages 305-308
The Effect of Optical Phonon Scattering on the On-Current and Gate Delay Time of CNT-FETs....Pages 309-312
Monte Carlo Modeling of Schottky Contacts on Semiconducting Carbon Nanotubes....Pages 313-316
Box Method for the Convection-Diffusion Equation Based on Exponential Shape Functions....Pages 317-320
A Simplified Quantum Mechanical Model for the Electron Distribution in a Si Nanowire....Pages 321-324
Efficient Green’s Function Algorithms for Atomistic Modeling of Si Nanowire FETs....Pages 325-328
Influence of Uniaxial [110] Stress on the Silicon Conduction Band Structure: Stress Dependence of the Nonparabolicity Parameter....Pages 329-332
Maxwell Equations on Unstructured Grids Using Finite-Integration Methods....Pages 333-336
Adaptive Time Discretization for a Transient Quantum Drift-Diffusion Model....Pages 337-340
MDS — A New, Highly Extensible Device Simulator....Pages 341-344
Influence of the Poole-Frenkel Effect on Programming and Erasing in Charge Trapping Memories....Pages 345-348
On the Magnetic Field Extraction for On-Chip Inductance Calculation....Pages 349-352
EMC Simulation of THz Emission from Semiconductor Devices....Pages 353-356
Enhanced Band-to-Band Tunneling-Induced-Hot-Electron Injection in P-Channel Flash by SiGe Channel and HfO 2 Tunnel Dielectric....Pages 357-360
Challenges in 3D Process Simulation for Advanced Technology Understanding....Pages 361-364
Characteristic Fluctuation Dependence on Discrete Dopant for 16nm SOI FinFETs at Different Temperature....Pages 365-368
Hot-Carrier Behaviour of a 0.35 µm High-Voltage n-Channel LDMOS Transistor....Pages 369-372
Dynamic Monte Carlo Simulation of an Amorphous Organic Device....Pages 373-376
Charge Injection Model in Organic Light-Emitting Diodes Based on a Master Equation....Pages 377-380
Simulation of Analog/RF Performance and Process Variation in Nanowire Transistors....Pages 381-384
Analysis of Process-Geometry Modulations through 3D TCAD....Pages 385-388
Asymmetrical Triple-Gate FET....Pages 389-392
Process Variation-A ware Estimation of Static Leakage Power in Nano CMOS....Pages 393-396
The Optimization of Low Power Operation SRAM Circuit for 32nm Node....Pages 397-400
Device Design Evaluation of Multigate FETs Using Full 3D Process and Device TCAD Simulation....Pages 401-404
Modeling and Extraction of Effective Lateral Doping Profile Using the Relation of On-Resistance vs. Overlap Capacitance in (100) and (110)-Oriented MOSFETs....Pages 405-408
Molecular Orbital Examination of Negative-Bias Temperature Instability Mechanism....Pages 409-412
Process Margin Analysis and Yield Enhancement Through Statistical Topography Simulation....Pages 413-416
Efficient Coupling of Monte Carlo and Level Set Methods for Topography Simulation....Pages 417-420
Strained Contact Etch Stop Layer Integration: Geometry Design Impact....Pages 421-424
Modeling of Deposition During C 5 F 8 /CO/O 2 /Ar Plasma Etching Using Topography and Composition Simulation....Pages 425-428
Ab Initio Calculations of the Transport Through Single Molecules and Carbon Nanotubes....Pages 429-432
Three-Dimensional Sacrificial Etching....Pages 433-436
Atomistic study of Metal/High-K interface....Pages 437-440
Ab-Initio Calculations of Indium Migration in Uniaxial Strained Silicon....Pages 441-444
Noise Simulation of Nanoscale Devices Based on the Non-Equilibrium Green’s Function Formalism....Pages 445-448
RDF Analysis of Small-Signal Equivalent Circuit Parameters in MOSFET Devices....Pages 449-452
Back Matter....Pages 453-458