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ویرایش: 1 نویسندگان: Henry Baltes, Jan G. Korvink, Oliver Paul (auth.), Univ.-Prof. Dr. Heiner Ryssel, Dr. Peter Pichler (eds.) سری: ISBN (شابک) : 9783709173633, 9783709166192 ناشر: Springer-Verlag Wien سال نشر: 1995 تعداد صفحات: 514 زبان: English فرمت فایل : PDF (درصورت درخواست کاربر به PDF، EPUB یا AZW3 تبدیل می شود) حجم فایل: 42 مگابایت
کلمات کلیدی مربوط به کتاب شبیه سازی دستگاه ها و فرآیندهای نیمه هادی: دوره. 6: شبیه سازی و مدل سازی، الکترونیک و میکروالکترونیک، ابزار دقیق، مهندسی به کمک کامپیوتر (CAD، CAE) و طراحی
در صورت تبدیل فایل کتاب Simulation of Semiconductor Devices and Processes: Vol. 6 به فرمت های PDF، EPUB، AZW3، MOBI و یا DJVU می توانید به پشتیبان اطلاع دهید تا فایل مورد نظر را تبدیل نمایند.
توجه داشته باشید کتاب شبیه سازی دستگاه ها و فرآیندهای نیمه هادی: دوره. 6 نسخه زبان اصلی می باشد و کتاب ترجمه شده به فارسی نمی باشد. وبسایت اینترنشنال لایبرری ارائه دهنده کتاب های زبان اصلی می باشد و هیچ گونه کتاب ترجمه شده یا نوشته شده به فارسی را ارائه نمی دهد.
SISDEP '95 یک انجمن بین المللی برای ارائه نتایج پیشرفته تحقیق و توسعه در زمینه شبیه سازی فرآیندهای عددی و دستگاه فراهم می کند. کوچک شدن مداوم ابعاد دستگاه، استفاده از مواد جدید و مراحل پردازش پیشرفته در ساخت دستگاه های نیمه هادی نیازمند نرم افزارهای جدید و بهبود یافته است. روند افزایش پیچیدگی در ساختارها و فناوری فرآیند نیازمند مدلهای پیشرفتهای است که تمام جلوههای اساسی و ابزارهای پیچیده دو بعدی و سه بعدی را برای هندسههای تقریباً دلخواه طراحی شده توصیف میکنند. این کتاب حاوی آخرین نتایج به دست آمده توسط دانشمندان بیش از 20 کشور در مورد شبیه سازی و مدل سازی فرآیند، شبیه سازی تجهیزات فرآیند، مدل سازی دستگاه و شبیه سازی دستگاه های جدید، نیمه هادی های قدرت و حسگرها، در مورد شبیه سازی دستگاه و استخراج پارامتر برای مدل های مدار، عملی است. استفاده از شبیه سازی، روش های عددی و نرم افزار.
SISDEP ’95 provides an international forum for the presentation of state-of-the-art research and development results in the area of numerical process and device simulation. Continuously shrinking device dimensions, the use of new materials, and advanced processing steps in the manufacturing of semiconductor devices require new and improved software. The trend towards increasing complexity in structures and process technology demands advanced models describing all basic effects and sophisticated two and three dimensional tools for almost arbitrarily designed geometries. The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation, numerical methods, and software.
Front Matter....Pages i-xiv
Numerical Modelling and Materials Characterisation for Integrated Micro Electro Mechanical Systems....Pages 1-9
Fast and Accurate Aerial Imaging Simulation for Layout Printability Optimization....Pages 10-13
Efficient and Rigorous 3D Model for Optical Lithography Simulation....Pages 14-17
Application of the Two-dimensional Numerical Simulation for the Description of Semiconductor Gas Sensors....Pages 18-21
Analysis of Piezoresistive Effects in Silicon Structures Using Multidimensional Process and Device Simulation....Pages 22-25
Modeling of magnetic-field-sensitive GaAs devices using 3D Monte Carlo simulation....Pages 26-29
Quasi Three-Dimensional Simulation of Heat Transport in Thermal-Based Microsensors....Pages 30-33
Simulating Deep Sub-Micron Technologies: An Industrial Perspective....Pages 34-41
An Improved Calibration Methodology for Modeling Advanced Isolation Technologies....Pages 42-45
Algorithms for the Reduction of Surface Evolution Discretization Error....Pages 46-49
Polygonal Geometry Reconstruction after Cellular Etching or Deposition Simulation....Pages 50-53
A Data-Model for a Technology and Simulation Archive....Pages 54-57
A Programmable Tool for Interactive Wafer-State Level Data Processing....Pages 58-61
Layout Design Rule Generation with TCAD Tools for Manufacturing....Pages 62-65
ALAMODE: A Layered Model Development Environment....Pages 66-69
TCAD Optimization Based on Task-Level Framework Services....Pages 70-73
Cellular Automata Simulation of GaAs-IMPATT-Diodes....Pages 74-77
Two-Dimensional Simulation of Deep-Trap Effects in GaAs MESFETs with Different Types of Surface States....Pages 78-81
An Efficient Numerical Method to Solve the Time-Dependent Semiconductor Equations Including Trapped Charge....Pages 82-85
Advances in Numerical Methods for Convective Hydrodynamic Model of Semiconductor Devices....Pages 86-89
An Advanced Cellular Automaton Method with Interpolated Flux Scheme and its Application to Modeling of Gate Currents in Si MOSFETs....Pages 90-93
Piezoresistance and the Drift-Diffusion Model in Strained Silicon....Pages 94-97
A Novel Approach to HF-Noise Characterization of Heterojunction Bipolar Transistors....Pages 98-101
Ge Profile for Minimum Neutral Base Transit Time in Si/Si 1-y Ge y Heterojunction Bipolar Transistors....Pages 102-105
Performance optimization in Si/SiGe heterostructure FETs....Pages 106-109
On the Integral Representations of Electrical Characteristics in Si Devices....Pages 110-113
Large Signal Frequency Domain Device Analysis Via the Harmonic Balance Technique....Pages 114-117
A Method for Extracting the Threshold Voltage of MOSFETs Based on Current Components....Pages 118-121
2-D MOSFET Simulation by Self-Consistent Solution of the Boltzmann and Poisson Equations Using a Generalized Spherical Harmonic Expansion....Pages 122-125
Ultra High Performance, Low Power 0.2 µ m CMOS Microprocessor Technology and TCAD Requirements....Pages 126-134
Viscoelastic Modeling of Titanium Silicidation....Pages 135-138
Multidimensional Nonlinear Viscoelastic Oxidation Modeling....Pages 139-142
Three-Dimensional Integrated Process Simulator: 3D-MIPS....Pages 143-146
Effect of Process-Induced Mechanical Stress on Circuit Layout....Pages 147-150
The Simulation System for Three-Dimensional Capacitance and Current Density Calculation with a User Friendly GUI....Pages 151-154
Numerical and analytical modelling of head resistances of diffused resistors....Pages 155-158
New Spreading Resistance Effect For Sub-0.50 µ m MOSFETs: Model and Simulation....Pages 159-162
The Role of SEMATECH in Enabling Global TCAD Collaboration....Pages 163-165
Three Dimensional Simulation for Sputter Deposition Equipment and Processes....Pages 166-169
Comprehensive Reactor, Plasma, and Profile Simulator for Plasma Etch Processes....Pages 170-173
Modeling the Wafer Temperature in a LPCVD Furnace....Pages 174-177
Determination of Electronic States in Low Dimensional Heterostructure and Quantum Wire Devices....Pages 178-181
An Exponentially Fitted Finite Element Scheme for Diffusion Process Simulation on Coarse Grids....Pages 182-185
Achievement of Quantitatively Accurate Simulation of Ion-Irradiated Bipolar Power Devices....Pages 186-189
Modeling of Substrate Bias Effect in Bulk and SOI SiGe-channel p-MOSFETs....Pages 190-193
A Very Fast Three-Dimensional Impurity Profile Simulation Incorporating An Accumulated Diffusion Length and Its Application to the Design of Power MOSFETs....Pages 194-197
Recovery of Vectorial Fields and Currents in Multidimensional Simulation....Pages 198-201
An Efficient Approach to Solving The Boltzmann Transport Equation in Ultra-fast Transient Situations....Pages 202-205
Modeling of a Hot Electron Injection Laser....Pages 206-209
Scaling Considerations of Bipolar Transistors using 3D Device Simulation....Pages 210-213
Three-Dimensional Monte Carlo Simulation of Boron Implantation into <100>Single-Crystal Silicon Considering Mask Structure....Pages 214-217
A fully 2D, Analytical Model for the Geometry and Voltage Dependence of Threshold Voltage in Submicron MOSFET’s....Pages 218-221
On the influence of band structure and scattering rates on hot electron modeling....Pages 222-225
Finite Element Monte Carlo Simulation of Recess Gate FETs....Pages 226-229
Coupled 2D-microscopic/macroscopic simulation of nanoelectronic heterojunction devices....Pages 230-233
On the Discretization of van Roosbroeck’s Equations with Magnetic Field....Pages 234-237
Modeling of Impact Ionization in a Quasi Deterministic 3D Particle Dynamics Semiconductor Device Simulation Program....Pages 238-241
Accurate Modeling of Ti/TiN Thin Film Sputter Deposition Processes....Pages 242-245
Monte Carlo Simulation of InP/InGaAs HBT with a Buried Subcollector....Pages 246-249
Design and Optimization of Millimeter-Wave IMPATT Oscillators Using a Consistent Model for Active and Passive Circuit Parts....Pages 250-253
Generalised Drift-Diffusion Model of Bipolar Transport in Semiconductors....Pages 254-257
Efficient 3D Unstructured Grid Algorithms for Modelling of Chemical Vapour Deposition in Horizontal Reactors....Pages 258-261
Preventing critical conditions in IGBT chopper circuits by a multi-step gate drive mode....Pages 262-265
Control of Plasma Dynamics within Double-Gate-Turn-Off Thyristors (D-GTO)....Pages 266-269
A Vector Level Control Function for Generalized Octree Mesh Generation....Pages 270-273
Comparison of Hydrodynamic Formulations for Non-Parabolic Semiconductor Device Simulations....Pages 274-277
Influence of Analytical MOSFET Model Quality on Analog Circuit Simulation....Pages 278-281
2-D Adaptive Simulation of Dopant Implantation and Diffusion....Pages 282-285
Optimization of a Recessed LOCOS using a tuned 2-D process simulator....Pages 286-289
Simulation of Complex Planar Edge Termination Structures for Vertical IGBTs by Solving the Complete Semiconductor Device Equations....Pages 290-293
Numerical Analysis of Hot-Electron Effects in GaAs MESFETs....Pages 294-297
Capacitance Model of Microwave InP-Based Double Heterojunction Bipolar Transistors....Pages 298-301
Estimation of the Charge Collection for the Soft-Error Immunity by the 3D-Device Simulation and the Quantitative Investigation....Pages 302-305
D.C. Electrothermal Hybrid BJT Model for SPICE....Pages 306-309
Alpha-Particle Induced Soft Error Rate Evaluation Tool and User Interface....Pages 310-313
Hydrodynamic Modeling of Electronic Noise by the Transfer Impedance Method....Pages 314-317
Monte Carlo Simulation of S-Type Negative Differential Conductance in Semiconductor Heterostructures....Pages 318-321
Two-Barrier model for Description of Charge Carriers Transport Processes in Structures with Porous Silicon....Pages 322-324
Monte-Carlo simulation of inverted hot carrier distribution under strong carrier-optical phonon scattering....Pages 325-327
Algorithms and Models for Simulation of MOCVD of III-V Layers in the Planetary Reactor....Pages 328-331
An Approach for Explaining Drift Phenomena in GTO Devices Using Numerical Device Simulation....Pages 332-335
Parallel 3D Finite Element Power Semiconductor Device Simulator Based on Topologically Rectangular Grid....Pages 336-339
Investigation of Silicon Carbide Diode Structures via Numerical Simulations Including Anisotropic Effects....Pages 340-343
A new physical compact model of CLBTs for circuit simulation including two-dimensional calculations....Pages 344-347
Combining 2D and 3D Device Simulation with Circuit Simulation for Optimising High-Efficiency Silicon Solar Cells....Pages 348-351
A New Quasi-two Dimensional HEMT Model....Pages 352-355
Simulations of the forward behaviour of hybrid Schottky-/pn-diodes....Pages 356-359
HFET Breakdown Study by 2D and Quasi 2D Simulations: Topology Influence....Pages 360-363
Investigation of GTO Turn-on in an Inverter Circuit at Low Temperatures using 2-D Electrothermal Simulation....Pages 364-367
Large Scale Thermal Mixed Mode Device and Circuit Simulation....Pages 368-371
Scaling of Conventional MOSFET’s to the 0.1-µm Regime....Pages 372-379
Monte Carlo Simulation of Carrier Capture at Deep Centers for Silicon and Gallium Arsenide Devices....Pages 380-383
A New Statistical Enhancement Technique in Parallelized Monte Carlo Device Simulation....Pages 384-387
Stability Issues in Self-Consistent Monte Carlo-Poisson Simulations....Pages 388-391
The Path Integral Monte Carlo Method for Quantum Transport on a Parallel Computer....Pages 392-395
A Monte Carlo Transport Model Based on Spherical Harmonics Expansion of the Valence Bands....Pages 396-399
Full-Band Monte Carlo Transport Calculation in an Integrated Simulation Platform....Pages 400-403
On Particle-Mesh Coupling in Monte Carlo Semiconductor Device Simulation....Pages 404-407
T 2 CAD: Total Design for Sub-um Process and Device Optimization with Technology-CAD....Pages 408-415
Modelling Impact-Ionization in the Framework of the Spherical-Harmonics Expansion of the Boltzmann Transport Equation with Full-Band Structure Effects....Pages 416-419
Impact Ionization Model Using Second- and Fourth-Order Moments of Distribution Function....Pages 420-423
An Accurate NMOS Mobility Model for 0.25µm MOSFETs....Pages 424-427
A 2-D modeling of Metal-Oxide-Polycrystalline Silicon-Silicon (MOPS) structures for the determination of interface state and grain boundary state distributions....Pages 428-431
Sensitivity Analysis of an Industrial CMOS Process using RSM Techniques....Pages 432-435
Process- and Devicesimulation of Very High Speed Vertical MOS Transistors....Pages 436-439
Two-Dimensional Transient Simulation of Charge-Coupled Devices Using MINIMOS NT....Pages 440-443
Determination of Vacancy Diffusivity in Silicon for Process Simulation....Pages 444-447
Precipitation phenomena and transient diffusion/activation during high concentration boron annealing....Pages 448-451
Modelling of silicon interstitial surface recombination velocity at non-oxidizing interfaces....Pages 452-455
Efficient Hybrid Solution of Sparse Linear Systems....Pages 456-459
Mesh Generation for 3D Process Simulation and the Moving Boundary Problem....Pages 460-463
Three-Dimensional Grid Adaptation Using a Mixed-Element Decomposition Method....Pages 464-467
Unified Grid Generation and Adaptation for Device Simulation....Pages 468-471
Platinum Diffusion at Low Temperatures....Pages 472-475
Lattice Monte-Carlo Simulations of Vacancy-Mediated Diffusion and Implications for Continuum Models of Coupled Diffusion....Pages 476-479
A New Hydrodynamic Equation for Ion-Implantation Simulation....Pages 480-483
Monte Carlo Simulation of Multiple-Species Ion Implantation and its Application to the Modeling of 0.1µ PMOS Devices....Pages 484-487
Analytical Model for Phosphorus Large Angle Tilted Implantation....Pages 488-491
Statistical Accuracy and CPU Time Characteristic of Three Trajectory Split Methods for Monte Carlo Simulation of Ion Implantation....Pages 492-495
Back Matter....Pages 496-501