Silicon Carbide–1968. Proceedings of the International Conference on Silicon Carbide, University Park, Pennsylvania, October 20–23, 1968

Content: 
Front Matter, Page i
Copyright, Page ii
International Conference on SILICON CARBIDE - 1968, Page iii
OPENING REMARKS, Page iv, Rustum Roy
PERSPECTIVES ON SILICON CARBIDE, Pages S1-S12, Charles E. Ryan
PROBLEMS IN SILICON CARBIDE DEVICE DEVELOPMENT, Pages S13-S23, Peter T.B. Shaffer
THERMAL PROPERTIES OF β-SILICON CARBIDE FROM 20 TO 2000°C, Pages S25-S32, E.L. Kern, D.W. Hamill, H.W. Deem, H.D. Sheets
THE INFLUENCE OF IMPURITIES ON THE GROWTH OF SILICON CARBIDE CRYSTALS GROWN BY GAS-PHASE REACTIONS, Pages S33-S44, W.F. Knippenberg, G. Verspui
THE INFLUENCE OF IMPURITIES ON THE GROWTH OF SILICON CARBIDE CRYSTALS BY RECRYSTALLIZATION, Pages S45-S55, W.F. Knippenberg, G. Verspui
SOME OBSERVATIONS ON SILICON CARBIDE SINGLE CRYSTAL GROWTH, Pages S57-S66, G.S. Kamath
PRINCIPLES OF SOLUTION AND TRAVELLING SOLVENT GROWTH OF SILICON CARBIDE, Pages S67-S71, G.A. Wolff, B.N. Das, C.B. Lamport, A.I. Mlavsky, E.A. Trickett
GROWTH OF SILICON CARBIDE FROM SOLUTION, Pages S73-S84, Robert C. Marshall
THE GROWTH OF SiC CRYSTALS FROM VAPOR BY THE BRIDGMAN-STOCKBARGER METHOD, Pages S85-S95, J. Smiltens
BETA SILICON CARBIDE, Pages S97-S105, Peter T.B. Shaffer
HETEROEPITAXY OF BETA SILICON CARBIDE EMPLOYING LIQUID METALS, Pages S107-S118, Irvin Berman, Joseph J. Comer
SOME ASPECTS OF DISORDER IN SILICON CARBIDE, Pages S119-S128, J.P. Golightly, L.J. Beaudin
DEPENDENCE OF PHYSICAL PROPERTIES ON POLYTYPE STRUCTURE, Pages S129-S139, Lyle Patrick
OPTICAL PROPERTIES OF POLYTYPES OF SiC: INTERBAND ABSORPTION, AND LUMINESCENCE OF NITROGEN-EXCITON COMPLEXES, Pages S141-S152, W.J. Choyke
PHASE STABILITY OF SILICON CARBIDE IN THE TERNARY SYSTEM Si-C-N, Pages S153-S165, A.R. Kieffer, P. Ettmayer, E. Gugel, A. Schmidt
ELECTRONIC STRUCTURE AND OPTICAL SPECTRUM OF SILICON CARBIDE, Pages S167-S178, Frank Herman, John P. Van Dyke, Richard L. Kortum
FABRICATION OF SILICON CARBIDE LIGHT EMITTING DIODES, Pages S179-S186, J.M. Blank
THE FABRICATION OF SiC ELECTROLUMINESCENT DISMAYS, Pages S187-S197, R.W. Brander
THE ETCHING OF SILICON CARBIDE, Pages S199-S210, V.J. Jennings
ELECTRICAL PROPERTIES OF SiC DEVICES, Pages S211-S222, R.B. Campbell, H.S. Berman
PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE IN ALPHA SILICON CARBIDE, Pages S223-S230, R.M. Potter
LUMINESCENCE OF SILICON CARBIDE WITH DIFFERENT IMPURITIES, Pages S231-S241, E.E. Violin, A.A. Kal'nin, V.V. Pasynkov, Yu.M. Tairov, D.A. Yas'kov
THE TEMPERATURE DEPENDENCE OF PHOTOELECTRIC EFFECTS IN SILICON CARBIDE, Pages S243-S247, K. Thiessen, G. Jungk
THE E.S.R. PROPERTIES OF ELECTRON IRRADIATED HEXAGONAL AND CUBIC SILICON CARBIDE, Pages S249-S259, J.H.N. Loubser, J.A. de Sousa Balona, W.P. van Ryneveld
MAGNETIC RESONANCE IN 6H SiC, Pages S261-S272, G.E.G. Hardeman, G.B. Gerritsen
ACTIVATION ANALYSIS OF THE IMPURITIES IN SILICON CARBIDE, Pages S273-S283, P.N. Kuin
THE EPITAXIAL GROWTH OF BETA SILICON CARBIDE, Pages S285-S291, I.H. Khan
THE PROPERTIES OF SOME SiC ELECTROLUMINESCENT DIODES, Pages S293-S302, A. Todkill, R.W. Brander
SILICON CARBIDE COED CATHODES, Pages S303-S310, R.W. Brander, A. Todkill
FORMATION OF CRISTOBALITE FROM SILICON CARBIDE, Pages S311-S320, P. Schuster, E. Gugel
EQUILIBRIUM COMPUTATIONS ON THE C-Cl-H-Si SYSTEM, Pages S321-S330, T.J. Lewis
SILICON CARBIDE AS A FISSION PRODUCT BARRIER IN NUCLEAR FUELS, Pages S331-S339, ERIC H. VOICE
EPITAXIAL GROWTH OF β-SILICON CARBIDE, Pages S341-S353, R.W. Bartlett, R.A. Mueller
ELECTRONIC PROPERTIES OF N-TYPE β-SILICON CARBIDE CRYSTALS GROWN FROM SOLUTION, Pages S355-S363, A. Rosengreen
NUMERICAL DATA, Pages S365-S370
AUTHOR INDEX, Pages S371-S372