Semiconductor Materials Analysis and Fabrication Process Control

Content: 
EUROPEAN MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS, Page iv
Front Matter, Page v
Copyright, Page vi
Preface, Page vii, G.M. Crean, R. Stuck, J.A. Woollam
Conference Organization, Page ix
Supporting Organizations and Sponsors, Page x
In situ spectroscopic ellipsometry in molecular beam epitaxy for photonic devices, Pages 1-8, G.N. Maracas, J.L. Edwards, D.S. Gerber, R. Droopad
Insitu spectral ellipsometry for real-time measurement and control, Pages 9-16, Walter M. Duncan, Steven A. Henck
In situ spectroscopic ellipsometry studies of electron cyclotron resonance (ECR) plasma etching of oxides of silicon and GaAs, Pages 17-21, N.J. Ianno, S. Nafis, Paul G. Snyder, Blaine Johs, John A. Woollam
Spectroscopic ellipsometry characterisation of light-emitting porous silicon structures, Pages 22-26, C. Pickering, L.T. Canham, D. Brumhead
In situ studies of semiconductor processes by spectroellipsometry, Pages 27-34, B. Drévillon
Growth mode of ultrathin Sb layers on Si studied by spectroscopic ellipsometry and Raman scattering, Pages 35-39, U. Rossow, U. Frotscher, N. Esser, U. Resch, Th. Müller, W. Richter, D.A. Woolf, R.H. Williams
Criteria for the extraction of SIMOX material parameters from spectroscopic ellipsometry data, Pages 40-44, S. Lynch, G.M. Crean, R. Greef, J. Stoemonos
Round robin investigation of silicon oxide on silicon reference materials for ellipsometry, Pages 45-51, J. Vanhellemont, H.E. Maes, M. Schaekers, A. Armigliato, H. Cerva, A. Cullis, J. de Sande, H. Dinges, J. Hallais, V. Nayar, C. Pickering, J.-L. Stehlé, J. Van Landuyt, C. Walker, H. Werner, P. Salieri
Spectroscopic ellipsometric characterization of Si/Si1-xGex strained-layer supperlattices, Pages 52-56, H. Yao, J.A. Woollam, P.J. Wang, M.J. Tejwani, S.A. Alterovitz
The influence of nanocrystals on the dielectric function of porous silicon, Pages 57-61, H. Münder, M.G. Berger, H. Lüth, U. Rossow, U. Frotscher, W. Richter, R. Herino, M. Ligeon
Some examples of depth resolution in SIMS analysis, Pages 62-69, G. Prudon
Process control for III—V semiconductor device fabrication using mass spectroscopy, Pages 70-74, A.P. Webb
Sputter induced resonant ionization spectroscopy for trace analysis in silicon, Pages 75-78, L. Johann, R. Stuck, Ph. Kern, B. Sipp, P. Siffert
Contamination control and ultrasensitive chemical analysis, Pages 79-87, H. Ryssel, L. Frey, N. Streckfuss, R. Schork, F. Kroninger, T. Falter
Organic contamination of silicon wafers by buffered oxide etching, Pages 88-92, M. Beyer, K. Budde, W. Holzapfel
Application of advanced contamination analysis for qualification of wafer handling systems and chucks, Pages 93-98, F. Kroninger, N. Streckfuss, L. Frey, T. Falter, C. Ryzlewicz, L. Pfitzner, H. Ryssel
In situ optical spectroscopy of surfaces and interfaces with submonolayer resolution, Pages 99-105, J.F. McGilp
Thermal desorption of amorphous arsenic caps from GaAs(100) monitored by reflection anisotropy spectroscopy, Pages 106-110, U. Resch, S.M. Scholz, U. Rossow, A.B. Müller, W. Richter, A. Förster
Optical second harmonic generation from the Si(111)-Sb interface, Pages 111-114, J.R. Power, J.F. McGilp
Surface-sensitive multiple internal reflection spectroscopy as a tool to study surface mechanisms in CVD: the example of UV photodeposition of silicon dioxide and silicon nitride, Pages 115-118, C. Licoppe, C. Debauche
On the assessment of local stress distributions in integrated circuits, Pages 119-125, J. Vanhellemont, I. De Wolf, K.G.F. Janssens, S. Frabboni, R. Balboni, A. Armigliato
Strain analysis of multilayered silicon-based contact structures, Pages 126-130, E. Zolotoyabko, A. Ashkenazi, Y. Komem
In-process control of silicide formation during rapid thermal processing, Pages 131-134, J.-M. Dilhac, C. Ganibal, N. Nolhier, P.B. Moynagh, C.P. Chew, P.J. Rosser
In situ ellipsometry for real-time feedback control of oxidation furnaces, Pages 135-142, C. Schneider, R. Berger, L. Pfitzner, H. Ryssel
Optical characterization of the electrical properties of processed GaAs, Pages 143-152, O.J. Glembocki, J.A. Dagata, E.S. Snow, D.S. Katzer
Optical study of band bending and interface recombination at Sb, S and Se covered gallium arsenide surfaces, Pages 153-157, S. Hildebrandt, J. Schreiber, W. Kircher, R. Kuzmenko
Photoreflectance investigation of dry-etch-induced damage in semi-insulating GaAs substrates, Pages 158-162, M. Murtagh, P.V. Kelly, P.A.F. Herbert, M. O'Connor, G. Duffy, G.M. Crean
Contactless electromodulation for in situ characterization of semiconductor processing, Pages 163-166, X. Yin, X. Guo, F.H. Pollak, G.D. Pettit, D.T. McInturff, J.M. Woodall, Eun-Hee Cirlin
Photoreflectance versus ellipsometry investigation of GaAs/Al0.3Ga0.7As MQW's, Pages 167-171, V. Bellani, A. Borghesi, M. Geddo, G. Guizzetti, A. Stella, Chen Chen-Jia
Temperature dependence of the photoreflectance of strained and lattice-matched InGaAs/InAlAs single quantum wells, Pages 172-176, Y. Baltagi, S. Monéger, A. Tabata, T. Benyattou, C. Bru, A. Georgakilas, K. Zekentes, G. Halkias
Optical tools for intermixing diagnostic: application to InGaAs/InGaAsP microstructures, Pages 177-181, H. Peyre, F. Alsina, S. Juillaguet, E. Massone, J. Camassel, J. Pascual, R.W. Glew
Characterization of lattice-matched and strained GaInAs/AlInAs HEMT structures by photoluminescence spectroscopy, Pages 182-186, A. Tabata, T. Benyattou, G. Guillot, A. Georgakilas, K. Zekentes, G. Halkias
Interface characterization of strained InGaAs/InP quantum wells after a growth interruption sequence, Pages 187-190, R. Schwedler, B. Gallmann, K. Wolter, A. Kohl, K. Leo, H. Kurz, S. Juillaguet, E. Massone, J. Camassel, J.P. Laurenti, F.H. Baumann
Electric field dependence of allowed and forbidden transitions in In0.53Ga0.47As/In0.52Al0.48 As single quantum wells by room temperature modulation spectroscopy, Pages 191-196, A. Dimoulas, J. Leng, K.P. Giapis, A. Georgakilas, G. Halkias, A. Christou
Optical characterization of InP/InAlAs/InP interfaces grown by MOVPE, Pages 197-201, T. Benyattou, M.A. Garcia, S. Monéger, A. Tabata, M. Sacilotti, P. Abraham, Y. Monteil, R. Landers
Temperature dependence analysis of the optical transmission spectra in InGaAs/InP multi quantum well structures, Pages 202-207, C. Arena, L. Tarricone, F. Genova, G. Morello
Lifetime and diffusion length inhomogeneity controlled by point and extended defect interaction in n-GaAs LEC, Pages 208-212, A. Castaldini, A. Cavallini, E. Gombia, R. Mosca, L. Tarricone, A. Motta, L. Bora
Mapping of the local minority carrier diffusion length in silicon wafers, Pages 213-217, Michael Stemmer
Evaluation of the minority carrier lifetime and diffusion coefficient of cast polycrystalline silicon wafers by the dual mercury probe method, Pages 218-221, Eiichi Suzuki, Yutaka Hayashi
In-situ quality monitoring during the deposition of a-Si:H films, Pages 222-226, Christian Haffer, Marinus Kunst, Carsten Swiatkowski, Günter Seidelmann
Non-destructive identification of end-of-range damage in ion-implanted and annealed silicon, Pages 227-231, Yu. Shreter, J.H. Evans, B. Hamilton, A.R. Peaker, C. Hill, D.R. Boys, C.D. Meekison, G.R. Booker
Correlation of photoluminescence and nuclear characterization of In-implanted silicon, Pages 232-235, M.O. Henry, T.B. Kehoe, M.H. Nazare, K. Freitag, R. Vianden
Accurate infrared spectroscopy analysis in back-side damaged silicon wafers, Pages 236-239, B. Garrido, J.A. Moreno, J. Samitier, J.R. Morante
Chemical composition of porous silicon layers studied by IR spectroscopy, Pages 240-244, W. Theiss, P. Grosse, H. Münder, H. Lüth, R. Herino, M. Ligeon
Stoichiometry of oxygen precipitates in silicon, Pages 245-248, B. Pivac, A. Borghesi, M. Geddo, A. Sassella, A. Stella
Optical characterization of semiconductors containing inhomogeneous layers, Pages 249-254, Gustavo E. Aizenberg, Pieter L. Swart, Beatrys M. Lacquet
Nonlinear recombinations in photoreflectance characterization of silicon wafers, Pages 255-259, B.C. Forget, D. Fournier, V.E. Gusev
Investigation of the relaxation of excess carriers in SiGe-heterostructures by photothermal measurement, Pages 260-265, H.D. Geiler, S. Krügel, J. Nützel, E. Friess, G. Abstreiter
Epioptic analysis of the initial ordered growth of Au on Si(111), Pages 266-268, J.D. O'Mahony, J.F. McGilp, M.H.W. Verbruggen, C.F.J. Flipse
Diagnostics of the silicon-insulator interface structure by optical second-harmonic generation, Pages 269-272, I.V. Kravetsky, L.L. Kulyuk, A.V. Micu, D.A. Shutov, E.E. Strumban, C. Cobianu, D. Dascalu
Atomic scale simulation of crystal growth applied to the calculation of the photoemission current, Pages 273-276, M. Djafari Rouhani, N. Fazouan, A.M. Gue, D. Esteve
Potential step imaging of interfaces in MBE-grown structures, Pages 277-280, B. Hugsted, J. Gjønnes, J. Taftø
Using the metal-oxide-polysilicon-silicon (MOPS) structure to determine LPCVD polysilicon quality, Pages 281-284, Julian C. Carter, Alan G.R. Evans, Kraisorn Throngnumchai
Combined low-frequency noise and random telegraph signal analysis of silicon MOSFET's, Pages 285-290, E. Simoen, U. Magnusson, C. Claeys
Effect of near-surface damage on C—V measurements of Schottky barrier diodes, Pages 291-294, D. Bauza
The impact of high-field stressing on C–V characteristics of irradiated gate oxides, Pages 295-300, T. Brożek, B. Pešić
Effects of diffusion-induced defects on the carrier lifetime, Pages 301-305, A. Castaldini, A. Cavallini, B. Fraboni, E. Giannotte
In situ bulk lifetime measurement on silicon with a chemically passivated surface, Pages 306-311, T.S. Horányi, T. Pavelka, P. Tüttö
Infrared analysis of buried insulator layers formed by ion implantation into silicon, Pages 312-315, J. Samitier, S. Martinez, A. El Hassani, A. Pěrez-Rodríguez, J.R. Morante
Electrochemical etching and profiling of silicon, Pages 316-321, T.S. Horányi, P. Tüttö
Author index, Pages 322-326
Subject index, Pages 327-338