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دانلود کتاب Secondary Ion Mass Spectrometry SIMS II: Proceedings of the Second International Conference on Secondary Ion Mass Spectrometry (SIMS II) Stanford University, Stanford, California, USA August 27–31, 1979
دانلود کتاب طیف سنجی جرمی ثانویه یونی SIMS II: مجموعه مقالات دومین کنفرانس بین المللی طیف سنجی جرمی یونی ثانویه (SIMS II) دانشگاه استنفورد ، استنفورد ، کالیفرنیا ، ایالات متحده 27 تا 31 اوت 1979
مشخصات کتاب
Secondary Ion Mass Spectrometry SIMS II: Proceedings of the Second International Conference on Secondary Ion Mass Spectrometry (SIMS II) Stanford University, Stanford, California, USA August 27–31, 1979
ویرایش: 1 نویسندگان: Nicholas Winograd (auth.), Prof. A. Benninghoven, Dr. C. A. Evans Jr., Dr. R. A. Powell, Prof. R. Shimizu, Dr. H. A. Storms (eds.) سری: Springer Series in Chemical Physics 9 ISBN (شابک) : 9783642618734, 9783642618710 ناشر: Springer-Verlag Berlin Heidelberg سال نشر: 1979 تعداد صفحات: 310 زبان: English فرمت فایل : PDF (درصورت درخواست کاربر به PDF، EPUB یا AZW3 تبدیل می شود) حجم فایل: 20 مگابایت
قیمت کتاب (تومان) : 33,000
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توجه داشته باشید کتاب طیف سنجی جرمی ثانویه یونی SIMS II: مجموعه مقالات دومین کنفرانس بین المللی طیف سنجی جرمی یونی ثانویه (SIMS II) دانشگاه استنفورد ، استنفورد ، کالیفرنیا ، ایالات متحده 27 تا 31 اوت 1979 نسخه زبان اصلی می باشد و کتاب ترجمه شده به فارسی نمی باشد. وبسایت اینترنشنال لایبرری ارائه دهنده کتاب های زبان اصلی می باشد و هیچ گونه کتاب ترجمه شده یا نوشته شده به فارسی را ارائه نمی دهد.
توضیحاتی درمورد کتاب به خارجی
I. Fundamentals Chairpersons: D.E. Harrison and C.A. Evans, Jr..- Invited: The Dynamics of Ion-Solid Interactions: A Basis for Understanding SIMS.- Invited: Simultaneous Measurements of Photon and Secondary Ion Emissions from Ion-Bombarded Metal Surfaces.- Atom Ejection Mechanisms and Models.- New Models of Sputtering and Ion Knock-On Mixing.- Clustering Distances in Secondary Ion Mass Spectrometry.- Basic Aspects in the Sputtering of Atoms, Ions, and Excited States.- Cluster Formation in SIMS: CO on PdAg.- Effect of Partial Oxygen Pressure on Metal Single Crystals Bombarded by Noble Gas Ions.- A Comparison of Absolute Yields of Excited Neutrals and Positive Ions from Ion-Bombarded Surfaces.- Correlation Between the Spectral Ionization Probability of Sputtered Atoms and the Electron Density of States.- Physical Aspects of the Valence Model’s Parameters.- Negative Ion Emission from Surfaces Covered with Cesium and Bombarded by Noble Gas Ions.- Angle-Resolved SIMS—A New Technique for the Determination of Surface Structure.- II. Quantitation Chairpersons: D.B. Wittry and P. Williams.- Invited: Factors Influencing Secondary Ion Yields.- Invited: Instrumental Effects on Quantitative Analysis by Secondary Ion Mass Spectrometry.- A Quantitative Model for the Effects on Secondary Ion Emission of Gaseous Absorption at Solid Surfaces Under Noble Gas Ion Bombardment.- The Application of Ion Implantation to Quantitative SIMS Analysis.- Energy Filtering and Quantitative SIMS Analysis of Silicates for Major and Trace Elements.- Quantitative Analysis of Doped GaAs by Quadrupole SIMS.- Trace Element Analysis of Silicates by Ion Microprobe.- Imaging of Element Distributions by Ion Microprobe.- Secondary Ion Emission from Titanium Alloys Under Argon and Oxygen Bombardment.- Effect of Alloying in Secondary Ion Emission from AgPd and CrNi Systems.- III. Semiconductors Chairpersons: C.W. Magee and W. Werner.- Invited: Quantitation of SIMS for Semiconductor Processing Technology.- Problems Encountered in Depth Profiling of Nitrogen and Oxygen in Silicon by Means of Secondary Ion Mass Spectrometry.- Depth Profiling of Phosphorus in Silicon Using Cesium Bombardment Negative SIMS.- Chromium and Iron Determination in GaAs Epitaxial Layers.- Thermal Redistribution of Cr in GaAs Due to Damage, Stress and Concentration Gradients.- On-Line Sputter Rate Measurements During SIMS, AES Depth Profiling.- Laser Induced Redistribution of Ion Implanted and Surface Deposited B in Silicon: A SIMS Study.- SIMS Identification of Impurity Segregation to Grain Boundaries in Cast Multigrained Silicon.- SIMS Studies in Compound Semiconductors.- Characterization for Composition and Uniformity of MCVD Glass Film by Secondary Ion Mass Spectrometry (SIMS).- SIMS Study of Metallized Silicon Semiconductors.- IV. Static SIMS Chairperson: A. Benninghoven.- Invited: Molecular Secondary Ion Emission.- Invited: Analytical Applications of SIMS.- Static SIMS Investigations of Ami no Acid Mixtures.- Static SIMS of Ami no Acid Overlayers.- Static SIMS Studies of Metal-Covered W(110) Surfaces.- Investigation of Surface Reactions by SIMS: Nickel-Oxygen-Hydrogen- Interacti on.- Study of Inorganic Salts by Static and Dynamic Secondary Ion Mass Spectrometry (SIMS).- Secondary Ion Mass Spectrometry of Ami no Acids by Proton and Alkali Ion Attachment.- V. Metallurgy Chairpersons: J.D. Brown and A.P. von Rosenstiel.- Invited: Application of SIMS to Analysis of Steels.- Investigation of Metal Corrosion Mechanisms Using Stable Isotopes with the Ion Microprobe.- Investigations of Corrosion Layers on Mild Steel with a Direct Imaging Mass Spectrometer.- The Use of SIMS in the Oxidation of Metals.- Influence of Atomic Concentrations on Ion Emission Yields of Alloys Flooded with Oxygen.- Application of SIMS and AES to Environmental Studies of Fatigue Crack Growth in Aluminum Alloys.- Application of Ion Microprobe to Surface Properties of Cold-Rolled Steel Sheet.- Some Applications of SIMS and Other Surface Sensitive Techniques for the Chemical Characterization of Industrial Steel Surfaces.- VI. Instrumentation Chairpersons: D.S. Simons and F.G. Rüdenauer.- Invited: Analytical Requirements of SIMS and the Instrumental Implications.- Invited: Some Considerations on Secondary Ion Optics.- A Compact Cs-Evaporator for High Sensitivity SIMS.- Comparison of Laser Ionization and Secondary Ion Mass Spectrometry for Organic Materials Analysis.- Application to Semiconductor Characterization of a Mass-Filtered, Microfocussed Ion Gun and High-Transmission Quadrupole.- Transmission of Quadrupole Mass Spectrometers for SIMS Studies.- SIMS Apparatus to Study Ion Impact Desorption.- Digital Mass Control for an Ion Microprobe Mass Analyzer.- Computer-Controlled Peak-Top Search Procedure.- A Computer-Based Instrument Control and Data Acquisition System for a Quadrupole Secondary Ion Mass Spectrometry Instrument.- How to Make the Most of the SIMS Method by Means of the Scanning Ion Microscope A-DIDA.- Sputtered Neutral Mass Spectrometry Using a Microwave Plasma.- Investigation of Monolayers at High Primary Ion Current Densities.- VII. Geology Chairpersons: J. Okano and C. Meyer.- SIMS Measurement of Mg Isotopic Ratio in a Chondrite.- Negative Molecular Ion Analysis of Inorganic Sulfur-Oxygen Salts by SIMS.- SIMS Measurements of Tracer Diffusivity of Oxygen in Titaniun Dioxides and Sulfur in a Calcium Sulfide.- SIMS Analysis of TiO2, Including Depth Profiling.- Ion Microprobe Analysis of Small Heavy Metal Particles and Their Compounds.- VIII. Panel Discussion Chairperson: I.L. Kofsky.- Applications of Particle Accelerator-Assisted Ultra-High Sensitivity SIMS.- IX. Biology Chairpersons: M.S. Burns and G.H. Morrison.- Invited: Biomedical Applications of Secondary Ion Emission MicroAnalysis.- Diffusible Ion Localization in Biological Tissue by Ion Microscopy.- Determination of Isotope Ratios of Calcium and Iron in Human Blood by Secondary Ion Mass Spectrometry.- Biogenic and Non-Biogenic Carbonates of Calcium and Magnesium: New Studies by Secondary Ion Imaging.- Localization of Elements in Botanical Materials by Secondary Ion Mass Spectrometry.- Secondary Ion Emission Microanalysis of the Pigments Associated with the Eye: Preliminary Data.- Comparison of Spectra of Biochemical Compounds and Tissue Preparations.- X. Combined Techniques Chairpersons: C. Johnson and W.H. Christie.- Invited: High Sensitivity SIMS Using DC Accelerators.- Combined SIMS, AES, and XPS Investigations of Oxygen-Covered 3d Transition Metal Surfaces.- Oxidation of Nickel Base Alloys Flooded with Oxygen Under Ionic Bombardment.- Matrix Effect Studies by Comparative SNMS and SIMS of Oxidized Ce, Gd and Ta Surfaces.- XPS/LEED/SIMS Study of the Ni(100)/02 System: Origin of the Two 0(1s) Features.- Combined SIMS, AES and XPS Study of CdxHg1_xTe.- SIMS Depth Profiling of Thin and Ultrathin Films of Covalently Bonded Organic Overlayers.- Alpha-Recoil and Fission Fragment Induced Desorption of Secondary Ions.- XI. Postdeadline Papers.- Use of the IMS-3f High Mass Resolving Power.- The Bombardment Angle Dependence of the Sputtering and Secondary Ion Yield for Oxygen Ion Bombardment of Silicon.- Secondary Ion Mass Spectrometry of Small Molecules Held at Cryogenic Temperatures.- Index of Authors.
فهرست مطالب
Front Matter....Pages I-XIII
Front Matter....Pages 1-1
The Dynamics of Ion-Solid Interactions: A Basis for Understanding SIMS....Pages 2-6
Simultaneous Measurements of Photon and Secondary Ion Emissions from Ion-Bombarded Metal Surfaces....Pages 7-11
Atom Ejection Mechanisms and Models....Pages 12-14
New Models of Sputtering and Ion Knock-On Mixing....Pages 15-17
Clustering Distances in Secondary Ion Mass Spectrometry....Pages 18-20
Basic Aspects in the Sputtering of Atoms, Ions, and Excited States....Pages 21-25
Cluster Formation in SIMS: CO on PdAg....Pages 26-28
Effect of Partial Oxygen Pressure on Metal Single Crystals Bombarded by Noble Gas Ions....Pages 29-32
A Comparison of Absolute Yields of Excited Neutrals and Positive Ions from Ion-Bombarded Surfaces....Pages 33-33
Correlation Between the Spectral Ionization Probability of Sputtered Atoms and the Electron Density of States....Pages 34-36
Physical Aspects of the Valence Model’s Parameters....Pages 37-39
Negative Ion Emission from Surfaces Covered with Cesium and Bombarded by Noble Gas Ions....Pages 40-43
Angle-Resolved SIMS—A New Technique for the Determination of Surface Structure....Pages 44-46
Front Matter....Pages 47-47
Factors Influencing Secondary Ion Yields....Pages 48-52
Instrumental Effects on Quantitative Analysis by Secondary Ion Mass Spectrometry....Pages 53-57
A Quantitative Model for the Effects on Secondary Ion Emission of Gaseous Absorption at Solid Surfaces Under Noble Gas Ion Bombardment....Pages 58-60
The Application of Ion Implantation to Quantitative SIMS Analysis....Pages 61-61
Energy Filtering and Quantitative SIMS Analysis of Silicates for Major and Trace Elements....Pages 62-63
Quantitative Analysis of Doped GaAs by Quadrupole SIMS....Pages 64-66
Trace Element Analysis of Silicates by Ion Microprobe....Pages 67-69
Front Matter....Pages 47-47
Imaging of Element Distributions by Ion Microprobe....Pages 70-72
Secondary Ion Emission from Titanium Alloys Under Argon and Oxygen Bombardment....Pages 73-75
Effect of Alloying in Secondary Ion Emission from AgPd and CrNi Systems....Pages 76-78
Front Matter....Pages 79-79
Quantitation of SIMS for Semiconductor Processing Technology....Pages 80-84
Problems Encountered in Depth Profiling of Nitrogen and Oxygen in Silicon by Means of Secondary Ion Mass Spectrometry....Pages 85-87
Depth Profiling of Phosphorus in Silicon Using Cesium Bombardment Negative SIMS....Pages 88-90
Chromium and Iron Determination in GaAs Epitaxial Layers....Pages 91-94
Thermal Redistribution of Cr in GaAs Due to Damage, Stress and Concentration Gradients....Pages 95-96
On-Line Sputter Rate Measurements During SIMS, AES Depth Profiling....Pages 97-99
Laser Induced Redistribution of Ion Implanted and Surface Deposited B in Silicon: A SIMS Study....Pages 100-102
SIMS Identification of Impurity Segregation to Grain Boundaries in Cast Multigrained Silicon....Pages 103-105
SIMS Studies in Compound Semiconductors....Pages 106-106
Characterization for Composition and Uniformity of MCVD Glass Film by Secondary Ion Mass Spectrometry (SIMS)....Pages 107-109
SIMS Study of Metallized Silicon Semiconductors....Pages 110-113
Front Matter....Pages 115-115
Molecular Secondary Ion Emission....Pages 116-121
Analytical Applications of SIMS....Pages 122-126
Static SIMS Investigations of Amino Acid Mixtures....Pages 127-129
Static SIMS of Amino Acid Overlayers....Pages 130-132
Static SIMS Studies of Metal-Covered W(110) Surfaces....Pages 133-135
Investigation of Surface Reactions by SIMS: Nickel-Oxygen-Hydrogen-Interaction....Pages 136-138
Front Matter....Pages 115-115
Study of Inorganic Salts by Static and Dynamic Secondary Ion Mass Spectrometry (SIMS)....Pages 139-141
Secondary Ion Mass Spectrometry of Amino Acids by Proton and Alkali Ion Attachment....Pages 142-144
Front Matter....Pages 145-145
Application of SIMS to Analysis of Steels....Pages 146-150
Investigation of Metal Corrosion Mechanisms Using Stable Isotopes with the Ion Microprobe....Pages 151-153
Investigations of Corrosion Layers on Mild Steel with a Direct Imaging Mass Spectrometer....Pages 154-156
The Use of SIMS in the Oxidation of Metals....Pages 157-159
Influence of Atomic Concentrations on Ion Emission Yields of Alloys Flooded with Oxygen....Pages 160-162
Application of SIMS and AES to Environmental Studies of Fatigue Crack Growth in Aluminum Alloys....Pages 163-166
Application of Ion Microprobe to Surface Properties of Cold-Rolled Steel Sheet....Pages 167-169
Some Applications of SIMS and Other Surface Sensitive Techniques for the Chemical Characterization of Industrial Steel Surfaces....Pages 170-173
Front Matter....Pages 175-175
Analytical Requirements of SIMS and the Instrumental Implications....Pages 176-180
Some Considerations on Secondary Ion Optics....Pages 181-185
A Compact Cs-Evaporator for High Sensitivity SIMS....Pages 186-188
Comparison of Laser Ionization and Secondary Ion Mass Spectrometry for Organic Materials Analysis....Pages 189-190
Application to Semiconductor Characterization of a Mass-Filtered, Microfocussed Ion Gun and High-Transmission Quadrupole....Pages 191-191
Transmission of Quadrupole Mass Spectrometers for SIMS Studies....Pages 192-195
SIMS Apparatus to Study Ion Impact Desorption....Pages 196-198
Digital Mass Control for an Ion Microprobe Mass Analyzer....Pages 199-201
Computer-Controlled Peak-Top Search Procedure....Pages 202-202
A Computer-Based Instrument Control and Data Acquisition System for a Quadrupole Secondary Ion Mass Spectrometry Instrument....Pages 203-205
Front Matter....Pages 175-175
How to Make the Most of the SIMS Method by Means of the Scanning Ion Microscope A-DIDA....Pages 206-208
Sputtered Neutral Mass Spectrometry Using a Microwave Plasma....Pages 209-211
Investigation of Monolayers at High Primary Ion Current Densities....Pages 212-214
Front Matter....Pages 215-215
SIMS Measurement of Mg Isotopic Ratio in a Chondrite....Pages 216-218
Negative Molecular Ion Analysis of Inorganic Sulfur-Oxygen Salts by SIMS....Pages 219-221
SIMS Measurements of Tracer Diffusivity of Oxygen in Titanium Dioxides and Sulfur in a Calcium Sulfide....Pages 222-224
SIMS Analysis of TiO 2 , Including Depth Profiling....Pages 225-228
Ion Microprobe Analysis of Small Heavy Metal Particles and Their Compounds....Pages 229-232
Front Matter....Pages 233-233
Applications of Particle Accelerator-Assisted Ultra-High Sensitivity SIMS....Pages 234-236
Front Matter....Pages 237-237
Biomedical Applications of Secondary Ion Emission Micro-Analysis....Pages 238-243
Diffusible Ion Localization in Biological Tissue by Ion Microscopy....Pages 244-244
Determination of Isotope Ratios of Calcium and Iron in Human Blood by Secondary Ion Mass Spectrometry....Pages 245-247
Biogenic and Non-Biogenic Carbonates of Calcium and Magnesium: New Studies by Secondary Ion Imaging....Pages 248-251
Localization of Elements in Botanical Materials by Secondary Ion Mass Spectrometry....Pages 252-255
Secondary Ion Emission Microanalysis of the Pigments Associated with the Eye: Preliminary Data....Pages 256-258
Comparison of Spectra of Biochemical Compounds and Tissue Preparations....Pages 259-259
Front Matter....Pages 261-261
High Sensitivity SIMS Using DC Accelerators....Pages 262-262
Combined SIMS, AES, and XPS Investigations of Oxygen-Covered 3d Transition Metal Surfaces....Pages 263-265
Oxidation of Nickel Base Alloys Flooded with Oxygen Under Ionic Bombardment....Pages 266-268
Matrix Effect Studies by Comparative SNMS and SIMS of OxidizedCe, Gd and Ta Surfaces....Pages 269-271
Front Matter....Pages 261-261
XPS/LEED/SIMS Study of the Ni(100)/0 2 System: Origin of the Two 0(1s) Features....Pages 272-274
Combined SIMS, AES and XPS Study of Cd x Hg 1-x Te....Pages 275-277
SIMS Depth Profiling of Thin and Ultrathin Films of Covalently Bonded Organic Overlayers....Pages 278-280
Alpha-Recoil and Fission Fragment Induced Desorption of Secondary Ions....Pages 281-284
Front Matter....Pages 285-285
Use of the IMS-3f High Mass Resolving Power....Pages 286-290
The Bombardment Angle Dependence of the Sputtering and Secondary Ion Yield for Oxygen Ion Bombardment of Silicon....Pages 291-291
Secondary Ion Mass Spectrometry of Small Molecules Held at Cryogenic Temperatures....Pages 292-295
Back Matter....Pages 297-300
