Polycrystalline Semiconductors: Grain Boundaries and Interfaces

Front Matter....Pages I-XI
Front Matter....Pages 1-1
Intergranular Total Energy Maps and the Structure of a Grain Boundary....Pages 2-7
Grain Boundary Structure Determination by HREM: A Comparison with Computer Relaxed Configurations for <001> Pure Tilt in Germanium....Pages 8-18
Multiple Structures of a [001] Σ = 13 Tilt Grain Boundary in Germanium....Pages 19-24
Computer Modelling of Grain Boundaries by Use of Interatomic Potentials....Pages 25-33
Transmission of Dislocations with Non-common Burgers Vectors Through Σ = 9 (12̄2) Boundaries in Silicon and Germanium Observed by In Situ HVEM....Pages 34-39
Front Matter....Pages 41-41
High Resolution Electron Microscopy of the Structure and Chemistry of Grain Boundaries and Other Interfaces in Semiconductors....Pages 42-51
Theoretical Studies of the Impurity Segregation and Electrical Properties of Polycrystalline Silicon by LCAO Electronic Theory....Pages 52-57
Electronic Properties of Σ = 25 Silicon Bicrystals by Deep Level Transient Spectroscopy....Pages 58-63
The Influence of Structure and Impurity Precipitation on the Electrical Properties of the Grain Boundaries in Silicon: Copper Precipitation in the Σ = 25 Boundary....Pages 64-76
EBIC Contrast and Precipitation in Σ = 13 and Σ = 25 Annealed Silicon Bicrystals....Pages 77-82
Electron Beam Induced Current Contrast and Transmission Electron Microscopy Analysis of Special Grain Boundaries in Silicon....Pages 83-88
SEM-EBIC Investigations of the Electrical Activity of Grain Boundaries in Germanium....Pages 89-94
Front Matter....Pages 95-95
Atomic-Level Imaging and Microanalysis of Grain Boundaries in Polycrystalline Semiconductors....Pages 96-107
Investigation of the Cobalt Segregation at Grain Boundaries in Silicon....Pages 108-114
On the Influence of the Cottrell Atmosphere on the Recombination Losses at Grain Boundaries in Polycrystalline Silicon....Pages 115-121
Hydrogen Passivation of Grain Boundaries in Silicon Sheet Material....Pages 122-126
Atomic Hydrogen Passivation Studies of Microcrystalline Phases in Ion-Implant Damaged Surface Layers of Silicon....Pages 127-132
Hydrogen Injection and Migration in Silicon....Pages 133-138
Analysis of the Polycrystalline Semiconducting Film Electrical Resistance Variation Due to Isothermal Desorption and Temperature Stimulated Desorption of Oxygen....Pages 139-145
Front Matter....Pages 147-147
Activation and Passivation of Grain Boundary Recombination Activity in Polycrystalline Silicon....Pages 148-157
Front Matter....Pages 147-147
Thermal Activation and Hydrogen Passivation of Grain Boundaries....Pages 158-163
Analysis of Metal-Doped Polycrystalline Silicon with Secondary Ion Mass Spectrometry....Pages 164-169
Oxygen Detection in Polycrystalline Silicon....Pages 170-174
Generation of Radiation Defects in the Vicinity of Twin Boundaries in EFG Silicon Ribbons....Pages 175-179
Physical Properties of Polycrystalline S-Web Si Ribbons....Pages 180-185
Grain Boundary Structure in S-WEB Silicon Ribbon....Pages 186-191
Characterization of MBE-Grown Polysilicon....Pages 192-197
Front Matter....Pages 199-199
Mechanisms of Epitaxial Growth of Polar Semiconductors on (001) Silicon....Pages 200-212
Preparation and Characterization of Nickel Silicide....Pages 213-218
Characterization of the Interface of Silicon pn-Junctions, Fabricated by the Silicon Direct Bonding (SDB) Method....Pages 219-224
Metal and Polycrystalline Silicon Reactions....Pages 225-233
Interfacial Reactions of TiN x /Si Contacts....Pages 234-238
Linear and Parabolic Growth Kinetics in Binary Couples....Pages 240-244
Front Matter....Pages 245-245
Polycrystalline Compound Semiconductor Thin Films in Solar Cells....Pages 246-256
Electronic Properties of Photoetched CdSe Films....Pages 257-261
Thin Film Transistors and Light Sensors with Polycrystalline CdSe-Semiconductors....Pages 262-267
Front Matter....Pages 269-269
Crystallization Processes and Structures of Semiconductor Films....Pages 270-282
Crystallized Silicon Films for Active Devices....Pages 283-288
Laser Recrystallization of Polysilicon for Improved Device Quality....Pages 289-294
Growth of Sb-Doped Epitaxial Si Layers Through Recrystallization of Poly-Si on a (100) Si Substrate....Pages 295-300
Front Matter....Pages 301-301
Current Control by Electrically Active Grain Boundaries....Pages 302-314
Numerical Modelling of the Intergranular Potential Barrier Height and Carrier Concentration in Polysilicon....Pages 315-319
Hall Mobility and Carrier Concentration of e-Gun Evaporated Poly-Si Films....Pages 320-325
Measurement and Calculation of the Carrier Concentration in Polycrystalline Germanium Thin Films....Pages 326-331
Grain Boundary States in Float-Zone Silicon Bicrystals....Pages 332-337
Pressure Studies of Metastable Electron Traps in Grain Boundaries of p-HgMnTe and p-HgCdMnTe....Pages 338-344
Band Tailing in Polycrystalline and Disordered Silicon....Pages 345-351
Front Matter....Pages 353-353
Microstructure and Interfaces of Polysilicon in Integrated Circuits....Pages 354-365
Effect of the Grain Boundaries in Small Grain Polysilicon Thin Film Transistors....Pages 366-369
Kink Effect in the Double-Gate Accumulation-Mode N-Channel Polysilicon Thin-Film Transistors....Pages 370-375
Applications of Poly-Si in Selective-Area and Three-Dimensional Devices....Pages 376-381
Thin-Film Transistors from Evaporated Low Temperature Processed Poly-Si Films....Pages 382-386
Pressure Effect on In Situ Boron-Doped LPCVD Silicon Films....Pages 387-391
Back Matter....Pages 393-394