Physics of semiconductors

PHYSICS OF SEMICONDUCTORS......Page 1
Half-title......Page 2
Title Page......Page 4
Copyright Page......Page 5
Preface......Page 6
Contents......Page 8
1.1 Definition and Importance of Semiconductors......Page 12
1.2 A Chemical Approach to Semiconductors......Page 14
1.2c The Chemical Approach......Page 15
1.3a Nearly Free Electron Model......Page 18
1.3b Bloch\'s Theorem......Page 22
1.3c Level Filling......Page 25
2.1 Quantum States of a Three-Dimensional Crystal......Page 27
2.1a Bloch\'s Theorem......Page 29
2.1b The Brillouin Zone......Page 31
2.1c Inversion Symmetry of Constant Energy Surfaces in k-space......Page 32
2.1d Symmetries of Constant Energy Surfaces......Page 33
2.2a True Momentum, Group Velocity......Page 34
2.2c Effective Mass and Acceleration in Real Space......Page 36
2.3a Density of States in the Reciprocal Space......Page 38
2.3b Density of States in Energy......Page 40
2.4 Theoretical Determination of Band Structure......Page 41
2.4a The Tight Binding Approximation......Page 42
2.4b Plane Wave Expansion......Page 51
2.5 The True Band Structure......Page 52
2.6 Experimental Study of Band Structure......Page 54
2.6a Optical Methods: Energy Level Determinations......Page 55
2.6b The Cyclotron Resonance: Measuring the Effective Mass......Page 58
Periodicity in Three Dimensions and Fourier Expansion......Page 60
Matrix Elements of a Periodic Operator......Page 61
Transformation of the Wave Function under Symmetry Operations of the Direct Space......Page 63
Symmetry of Constant Energy Surfaces......Page 64
Appendix 2.3 Band Structure of Column IV Elements Calculated by the LCAO Method......Page 65
Resulting Band Structure......Page 68
Application: Binding Energy of Semiconductors of Column IV......Page 69
Appendix 2.4 The k · p Method......Page 72
3.1 The Hole Concept......Page 76
3.2 Impurities in Semiconductors......Page 82
3.3 Impurity Bands......Page 87
Appendix 3.1 Problems on Cyclotron Resonance in Silicon......Page 89
Solutions......Page 92
Appendix 3.2 Quantum Wells and Semiconducting Superlattice......Page 95
Appendix 3.3 Amorphous Semiconductors......Page 99
4.1 Occupation of the Electron Levels......Page 102
4.3 Determination of the Chemical Potential......Page 103
4.4 Statistics of Pure or Intrinsic Semiconductors......Page 105
4.5 Statistics of a Semiconductor Containing Impurities: The Notion of Majority and Minority Carriers......Page 109
n-type Semiconductor......Page 110
p-doped Semiconductor......Page 112
4.6 Compensated Semiconductor at Intermediate Temperature......Page 113
4.7 Semiconductor at Low Temperatures......Page 116
4.8 Application: The Semiconducting Thermometer......Page 118
4.9 Growth of Pure Crystals......Page 119
Appendix 4.1 Occupation Number of a Donor Level......Page 123
Appendix 4.2 Problem: Substrates for Microelectronics......Page 126
Solutions......Page 128
5.1 Introduction......Page 132
5.2 Drude\'s Model of Conductivity and Diffusion......Page 133
5.2a Electrical Conductivity......Page 134
5.2b Diffusion......Page 136
5.2c Diffusion in the Drude Model......Page 137
5.3 Semiclassical Treatment of Transport Processes......Page 139
5.3a The Boltzmann Equation for a Semiconductor......Page 140
5.3b Conductivity......Page 142
5.3c Diffusion......Page 145
5.3d Summary......Page 146
5.4a Collision Mechanisms......Page 147
5.4b Selective Doping of Superlattices......Page 149
Appendix 5.1 Problems on the Hall Effect and Magnetoresistance of Semiconductors in the Drude Model......Page 151
Solutions......Page 153
6.1 Light Absorption by Semiconductors......Page 158
6.1a The Fermi Golden Rule......Page 160
6.1b Selection Rules......Page 161
6.1c Calculation of the Absorption Coefficient......Page 164
6.1d Excitons......Page 166
6.2 Recombination......Page 167
6.3a Detection of Electromagnetic Radiation......Page 173
6.3b Electrophotography......Page 175
6.3c The Vidicon Tube......Page 176
Appendix 6.1 Quantum System Submitted to a Sinusoidally Varying Perturbation......Page 178
Appendix 6.2 Calculation of the Radiative Recombination Probability......Page 182
Appendix 6.3 Semiconducting Clusters for Non-Linear Optics......Page 186
7.1 Basic Equations for Semiconductor Devices......Page 190
7.2 Charge Neutrality......Page 191
7.3 Injection or Extraction of Minority Carriers......Page 192
Appendix 7.1 Charge Quasi-Neutrality......Page 195
Problems......Page 198
Solutions......Page 200
8.1 Introduction: Inhomogeneous Semiconductors......Page 205
8.2 The Equilibrium p–n Junction......Page 207
8.2a Qualitative Discussion......Page 208
8.2b Potential Difference between the p and n Regions......Page 210
8.2c Calculation of the Space Charge......Page 211
8.2d Currents in the Equilibrium Junction......Page 214
8.3a Energy Level Diagram......Page 215
8.3b Calculation of the Current......Page 216
8.3c Current and Concentration Distributions......Page 221
8.3e The Breakdown of a p–n Junction......Page 225
8.3f Transient Response of a p–n Junction......Page 227
Appendix 8.1 Problem: Non-Stationary p–n Junctions and their High-Frequency Applications......Page 229
9.1 Application of p–n Junctions......Page 241
9.1a Photovoltaic Cells and Solar Cells......Page 242
9.1b Electroluminescent Diodes and Lasers......Page 244
9.2 The Metal-Semiconductor Contact in Equilibrium......Page 245
9.2a ϕ[sub(m)] > ϕ[sub(s)]......Page 246
9.2b ϕ[sub(m)] < ϕ[sub(s)]......Page 248
9.3a ϕ[sub(m)] > ϕ[sub(s)]......Page 249
9.3b ϕ[sub(m)] < ϕ[sub(s)]......Page 251
9.4 The Semiconductor Surface......Page 252
9.5 Photoemission from Semiconductors......Page 254
9.6 Heterojunctions......Page 256
10.1 The Junction Transistor......Page 258
10.2a The Junction FET......Page 263
10.2b The MOSFET......Page 264
10.3 An Application of the MOSFET: The Charge-Coupled Device (CCD)......Page 268
10.4. Concepts of Integration and Planar Technology......Page 269
10.5 Band Gap Engineering......Page 273
10.6 Physical Limits in Digital Electronics......Page 275
Problems......Page 279
Solutions......Page 281
Problems......Page 288
Solutions......Page 293
Appendix 10.3 Problems on MOS (Metal-Oxide-Semiconductor) Structure......Page 297
Solutions......Page 303
Supplement: Integrated Circuits with MOS Transistors......Page 309
Values of the Important Physical Constants......Page 312
Some Physical Properties of Semiconductors (286 K)......Page 314
Bibliography......Page 316
Index......Page 318
Back Cover......Page 330