Physics and applications of semiconductor quantum structures

Physics and Applications of Semiconductor Quantum Structures......Page 1
Contents......Page 4
Preface......Page 13
1.1 Introduction......Page 16
1.2 Quantum structures......Page 18
References......Page 22
2: Formation and characterization of semiconductor nanostructures......Page 25
2.1 Introduction......Page 26
2.2.1 Quantum nanostructures utilizing atomic steps......Page 27
2.2.2 Formation of GaAs multiatomic steps on GaAs (001) vicinal surfaces......Page 29
2.2.3.1 Growth modes of strained InGaAs on GaAs multiatomic steps......Page 32
2.2.3.2 Formation of InGaAs QWRs......Page 35
2.2.4.1 Photoluminescence......Page 36
2.2.4.2 Polarization anisotropy in photoluminescence excitation spectra......Page 38
2.2.4.3 Photoluminescence characterization in magnetic fields......Page 39
2.2.5.1 Device application of QWRs utilizing atomic steps......Page 40
2.2.5.2 Fabrication of InGaAs QWR laser diodes......Page 41
2.2.5.3 Characterization of laser diodes......Page 42
2.3.1 MOVPE selective area growth for quantum nanostructures......Page 45
2.3.2.1 Formation of GaAs pyramidal structures......Page 46
2.3.2.2 Self-limited growth......Page 47
2.3.2.3 Formation and photoluminescence study of GaAs quantum dots......Page 50
2.3.3.1 High-density array of QDs......Page 51
2.3.3.2 Quantum dot network: a quantum wire-dot coupled structure......Page 54
2.3.4.1 Growth of InAs QDs on GaAs pyramidal structures......Page 56
2.3.4.2 Optical characterization of InAs quantum dots on GaAs pyramids......Page 60
2.3.5.1 Fabrication process and device structures......Page 63
2.3.5.2 Quantum wire transistors......Page 64
2.3.5.3 Single electron transistor......Page 65
2.3.6 Resistance-load SET inverter circuit......Page 67
2.4 Summary and outlook......Page 70
Acknowledgments......Page 72
References......Page 73
3.1 Introduction......Page 77
3.2.1 Quantum wires on stripe-patterned GaAs(311)A......Page 78
3.2.2 Dot-like structures on square- and triangular-patterned GaAs(311)A......Page 79
3.2.3 Coupled wire-dot arrays on stripe-patterned GaAs(311)A......Page 80
3.2.4 Uniform quantum dot arrays by hydrogen-enhanced step bunching on stripe-patterned GaAs(311)A......Page 83
3.3 Concluding remarks......Page 84
Acknowledgments......Page 85
References......Page 86
4.1 Introduction......Page 87
4.2.1 Experimental procedure......Page 88
4.2.2 Experimental results......Page 89
4.2.3 Discussion......Page 92
4.3 Formation of nanocrystalline Si by Er doping and optical properties of the nanocrystal......Page 93
4.3.2 Experimental results......Page 94
References......Page 98
5.1 Introduction......Page 100
5.2.1 Constant-composition layer......Page 101
5.2.2 Strained-layer superlattices (SLS)......Page 102
5.2.3 Composition graded layer......Page 103
5.3 Low-temperature Si and/or GeSi buffer for GeSi alloy strain relaxation......Page 104
5.4 New initial growth method for pure cubic GaN on GaAs (001)......Page 109
5.5 InAs growth on GaAs using new prelayer technology......Page 112
5.6 Conclusion......Page 115
References......Page 116
6.1 Introduction......Page 118
6.2.1 Fabrication of ZnS/(ZnSe)nnn/ZnS ultrathin quantum structures and their characterization......Page 120
6.2.2 Temperature dependence of PL of ZnS/ZnSe quantum dot structures......Page 126
6.2.3 Time resolved PL......Page 130
6.2.4 The effect of substrate temperature on the formation of quantum structures......Page 132
6.2.5 Mn doped ZnSe quantum dots......Page 135
6.3.1 Alloying at the heterointerface......Page 139
6.3.2 Self-organized formation of CdSe quantum dots......Page 142
6.3.3 Spectral diffusion in CdSe QDs......Page 144
Acknowledgments......Page 147
References......Page 148
7.1 Introduction......Page 151
7.2 Antidot lattices......Page 152
7.3 Commensurability peaks......Page 154
7.4 Aharonov–Bohm-type oscillation......Page 159
7.5 Triangular antidot lattices......Page 163
7.6 Altshuler–Aronov–Spivak oscillation......Page 166
7.7.1 Quantum-wire junction......Page 168
7.7.2 Energy bands and density of states......Page 170
7.7.3 Commensurability peaks and Aharonov–Bohm oscillation......Page 173
7.8.1 Experiments......Page 176
7.8.2 Thouless-number method......Page 178
7.8.3 Numerical results......Page 181
7.8.4 Localization oscillation......Page 182
7.9 Summary and conclusion......Page 184
References......Page 185
8.1 Introduction......Page 188
8.2 Magnetic quantum dot......Page 190
8.3 Composite fermions in an antidot: application of magnetic quantum dot......Page 194
8.4 Composite fermion edge channels......Page 198
8.5 Conclusion......Page 201
References......Page 202
9: Electronic states in circular and ellipsoidally deformed quantum dots......Page 204
9.1 Introduction......Page 205
9.2 Experimental details......Page 206
9.3.1 Atom-like properties: shell structure and Hund’s first rule......Page 208
9.3.2 Magnetic field dependence......Page 209
9.3.3 Spin triplet for the four-electron ground state......Page 211
9.4.1 Deformed dots in rectangular mesa devices......Page 213
9.4.2 Magnetic field dependence......Page 216
9.4.3 Study of Zeeman effect on the spin states......Page 217
9.5 Comparison to model calculations......Page 219
Acknowledgments......Page 224
References......Page 225
10.1 Introduction......Page 228
10.2 Remarks on low-dimensional excitons......Page 229
10.3 Single-exciton problem......Page 230
10.3.1 One-photon absorption process......Page 232
10.3.2 Two-photon absorption process......Page 235
10.3.3 Dielectric confinement effect......Page 237
10.4.1 An excitonic molecule in one dimension......Page 239
10.4.2.1 Fermion-picture treatment......Page 242
10.4.2.2 Boson-picture treatment......Page 243
10.5.1 Exciton Bose–Einstein condensation and density waves in one dimension......Page 246
10.5.2 Optical responses of the Tomonaga–Luttinger liquid: the Mahan exciton......Page 250
10.5.2.1 The valence-band photoemission: (N, 0) →(N － 1, 0)......Page 253
10.5.2.2 The core-level photoemission: (N, 0) →(N, 1)......Page 254
10.5.2.3 The one-photon absorption: (N, 0)→(N + 1, 1)......Page 255
10.6 Conclusions and prospect......Page 256
References......Page 259
11.1 Introduction......Page 262
11.2 Two-dimensional size confinement in ultrathin PbI2 nanocrystals [9]......Page 263
11.3 Size confinement of an exciton internal motion in ultrathin PbI2 nanocrystals [14]......Page 267
11.4 Nonlinear optical processes in CuCl nanocrystals [17]......Page 268
11.5 Photoinduced phenomena in luminescence spectra of a single CdSe nanocrystal [20]......Page 276
References......Page 280
12.1 Introduction......Page 282
12.2 Experimental......Page 284
12.3 Experimental results and discussion......Page 286
12.3.1 Energy transfer processes......Page 287
12.3.2 Temperature dependence......Page 291
12.3.3 Local-equilibrium emission......Page 295
12.3.4 Excited-state transitions......Page 300
12.3.5 Phonon-assisted exciton recombination......Page 302
12.4 Conclusions......Page 305
References......Page 306
13.1 Introduction......Page 309
13.2 Review of intersubband emission......Page 311
13.3 Emission from parabolic quantum wells......Page 316
13.4 Optical excitation of parabolic quantum wells......Page 322
13.5 Quantum interference effects......Page 324
13.5.1 Absorption in coupled quantum wells......Page 326
13.5.2 Interference of intersubband transitions......Page 330
13.6 Conclusions......Page 340
References......Page 342
14.1 Introduction......Page 345
14.2 Preparation and basic properties of (Ga,Mn)As......Page 346
14.2.2 Lattice constant and local lattice configuration......Page 347
14.3.1 Magnetic properties......Page 348
14.3.2 Magnetotransport properties......Page 349
14.4 Origin of ferromagnetism......Page 353
14.5.1.1 Interlayer coupling......Page 355
14.5.1.3 Tunnelling magnetoresistance......Page 358
14.5.2 Resonant tunnelling structures......Page 359
References......Page 360
15.1 Introduction......Page 363
15.2 Zeeman effects of GaAs and AlxGa1-xAs bulk......Page 364
15.3 GaAs/AlxGa1-xAs quantum well......Page 365
15.4 GaAs/AlxGa1-xAs quantum dot and quantum wire......Page 370
References......Page 374
16.1 Introduction......Page 377
16.2 Self-assembling of silicon quantum dots......Page 378
16.3.1 Valence band spectra and charging effect......Page 381
16.3.2 Comparison with theory......Page 385
16.4.1 Device fabrication......Page 386
16.4.2 Resonant tunnelling characteristics......Page 387
16.5 Silicon quantum dot memory......Page 388
16.5.2 Memory characteristics of Si quantum dot floating gate MOS structures......Page 389
References......Page 391
17: Quantum devices based on III-V compound semiconductors......Page 393
17.1 Introduction......Page 394
17.2.2.2 Materials......Page 395
17.2.2.3 Device structures and key issues......Page 396
17.2.3.1 Devices proposed and their prospects......Page 397
17.2.3.2 Classical or quantum?......Page 398
17.2.3.3 Materials for SEDs......Page 399
17.2.3.4 System architecture......Page 400
17.3.1 Approaches for formation of quantum structures......Page 401
17.3.2 Selective MBE growth of InGaAs quantum wires, dots and wire-dot coupled structures......Page 402
17.4.1 A key issue for nanofabrication......Page 411
17.4.2.1 Formation of metal–semiconductor interfaces for quantum devices......Page 412
17.4.2.2 In situ electrochemical process for metal deposition......Page 413
17.4.2.3 Electrical properties of Schottky contacts......Page 414
17.4.2.4 Surface/interface studies......Page 416
17.5.2.1 Device structures and fabrication process......Page 419
17.5.2.2 Gate control in single QWTrs......Page 420
17.5.2.3 Conductance quantization in single QWTr......Page 421
17.5.2.4 I–V characteristics of coupled QWTr......Page 423
17.6.1 Key issues for SEDs and efforts at RCIQE......Page 424
17.6.2.2 Theoretical study on gain of GaAs-based SETs having Schottky WPGs......Page 426
17.6.2.3 Experimental study on voltage gain of GaAs Schottky WPG SETs......Page 429
17.6.2.4 Gain increase by using multidot SET structure......Page 430
17.6.3.1 Device structure and operation......Page 431
17.6.3.2 Process of nanodot Schottky contact formation......Page 433
References......Page 435
18.1 Issues and challenges in semiconductor nanostructure......Page 439
18.2 Quantum transport; electron interference......Page 442
18.3 Review on lateral quantum interference devices......Page 444
18.4.1 Uneven gate conducting wire......Page 446
18.4.2 Electrostatic Aharonov–Bohm ring transistor......Page 448
18.4.3 Electron diffraction transistor......Page 452
18.4.4 One-dimensional corrugated quantum channel......Page 454
18.5 Summary......Page 455
References......Page 456
19.1 Introduction......Page 458
19.2 The model......Page 459
19.3 Numerical results and discussion......Page 465
References......Page 469
20.1 Introduction......Page 471
20.2.1 Basic physics for constant-current operation......Page 472
20.2.2 Experimental arrangement and results (constant-current operation)......Page 474
20.2.4 Framework of backward-pump model......Page 477
20.2.5 Theoretical bandwidth for noise suppression in comparison with experimental results......Page 480
20.3.1 Basic physics for constant-voltage operation......Page 482
20.3.2 Experimental arrangements and results (constant-voltage operation)......Page 483
20.3.3 New squeezing mechanism based on the backward pump process......Page 486
20.4 Conclusions......Page 488
References......Page 489