Photo-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing (Woodhead Publishing Series in Electronic and Optical Materials)

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Photo-Electroactive Nonvolatile Memories for Data Storage and Neuromorphic Computing
Copyright
Contents
List of contributors
Preface
1 Introduction to photo-electroactive nonvolatile memory
	References
2 Characteristics and mechanisms in resistive random-access memory
	2.1 Resistive random-access memory concept
	2.2 Resistive random-access memory materials
	2.3 Resistive random-access memory mechanisms
		2.3.1 Electrochemical metallization
			2.3.1.1 Switching kinetics
				Electrochemical reactions
				Drift and diffusion
				Crystallization
			2.3.1.2 Single or multiple filaments
				Single filament
				Multiple filaments
			2.3.1.3 Filament overgrowth
			2.3.1.4 Filament undergrowth
		2.3.2 Valence-change mechanism
			2.3.2.1 Point defects in valence-change mechanism devices
			2.3.2.2 Oxygen exchange in valence-change mechanism device
			2.3.2.3 Eight-wise and counter-eight-wise valence-change mechanism
		2.3.3 Thermochemical mechanism
		2.3.4 Electrostatic/electronic effects
			2.3.4.1 Space-charge-limited conduction
			2.3.4.2 Metal-insulator transition
			2.3.4.3 Poole–Frenkel emission
	References
3 Memory characteristics and mechanisms in transistor-based memories
	3.1 Introduction
	3.2 The basic structures and working principles of transistor memories
		3.2.1 Memory window
		3.2.2 Memory on/off current ratio
		3.2.3 Programming/erasing cyclic endurance property
		3.2.4 Time-dependent data storage retention capability
	3.3 The typical nonvolatile transistor memories
		3.3.1 Floating-gate transistor memories
			3.3.1.1 Electrode design
			3.3.1.2 Active layer design
			3.3.1.3 Tunneling/blocking dielectric layer design
			3.3.1.4 Floating gate design
		3.3.2 Charge-trap transistor memories
			3.3.2.1 Electret layer design
		3.3.3 Ferroelectric field-effect transistor memories
			3.3.3.1 Ferroelectret layer design
	3.4 Summary and prospect
	References
4 Two-terminal optoelectronic memory device
	4.1 Introduction
	4.2 Microscopic mechanism
		4.2.1 Interfacial barrier
		4.2.2 Filament formation/dissolution
		4.2.3 Charge trapping/detrapping
		4.2.4 Conformation evolution
	4.3 Optoelectronic memristor for memory and photonic computing
		4.3.1 Multilevel storage
		4.3.2 Logic operations
		4.3.3 Vision sensors
	4.4 Optoelectronic memristor for emulating synaptic functions
		4.4.1 Photoactivated synaptic functions
		4.4.2 Optogenetics-inspired tunable synaptic functions
	4.5 Prospects and challenges
	References
5 Three-terminal optoelectronic memory device
	5.1 Introduction
	5.2 The working mechanism of three-terminal optoelectronic memory device
	5.3 The development of three-terminal optoelectronic memory device
	5.4 Organic semiconductors based on different device structures
	5.5 Two-dimensional transition metal dichalcogenide based on various device structures
	5.6 Flexible three-terminal optoelectronic memory device
	5.7 Conclusion
	References
6 Synaptic devices based on field-effect transistors
	6.1 Introduction
	6.2 State-of-the-art synaptic transistors
		6.2.1 Floating-gate synaptic transistors
		6.2.2 Ferroelectric-gate synaptic transistors
		6.2.3 Electrolyte-gate synaptic transistors
		6.2.4 Optoelectronic synaptic transistors
	6.3 Summary and outlook
	References
7 Ionic synergetically coupled electrolyte-gated transistors for neuromorphic engineering applications
	7.1 Introduction
	7.2 Neural network and neuromorphic engineering
		7.2.1 Neuron and synapse
		7.2.2 Neuromorphic engineering and neuromorphic devices
	7.3 Electrolyte-gated neuromorphic transistors
		7.3.1 Electrolyte-gated transistors
		7.3.2 Ionic liquid electrolyte-gated neuromorphic transistors
		7.3.3 Solid-state ionic conductor gated neuromorphic transistors
		7.3.4 Metaplasticity mimicked on electrolyte-gated neuromorphic transistors
		7.3.5 Hodgkin–Huxley artificial synaptic membrane
	7.4 Electrolyte-gated neuromorphic transistor-based artificial tactile sensory systems
		7.4.1 External-powered electrolyte-gated transistor–integrated artificial tactile sensory systems
		7.4.2 Self-powered EGT-based artificial tactile sensory systems
	7.5 Multigate neuromorphic transistors and dendrite integration
		7.5.1 Dendritic integration
		7.5.2 Neuronal arithmetic
		7.5.3 Orientation selectivity
	7.6 Conclusions and outlook
	Acknowledgments
	References
8 One-dimensional materials for photoelectroactive memories and synaptic devices
	8.1 Introduction
	8.2 Synthesis of 1D materials
		8.2.1 Synthesis of inorganic 1D material
		8.2.2 Synthesis of organic 1D material
		8.2.3 Others
	8.3 Device fabrication
	8.4 Application in photoelectroactive memory
		8.4.1 Inorganic 1D material-based photoelectroactive memory
			8.4.1.1 Two-terminal memory device
				Single 1D material photoelectroactive memory device
				1D material array photoelectroactive memory device
			8.4.1.2 Three-terminal memory device
		8.4.2 Organic 1D material
		8.4.3 Others
	8.5 Application in photoelectroactive synaptic device
		8.5.1 Inorganic 1D material-based photoelectroactive synaptic device
			8.5.1.1 Two-terminal synaptic device
			8.5.1.2 Three-terminal synaptic device
		8.5.2 Organic 1D material
		8.5.3 Others
	8.6 Conclusion
	References
9 Novel photoelectroactive memories and neuromorphic devices based on nanomaterials
	9.1 Introduction
		9.1.1 The demand for developing photoelectroactive memories for data storage and neuromorphic computing
		9.1.2 Some basics for biosynapse
	9.2 Trapping-based photoelectroactive devices
		9.2.1 Si NC-based optical synaptic devices
			9.2.1.1 Device fabrication
			9.2.1.2 Working principle
			9.2.1.3 Device performance
			9.2.1.4 Discussion
		9.2.2 CNT-based devices for photoelectroactive memory
			9.2.2.1 Device fabrication
			9.2.2.2 Working principle
			9.2.2.3 Device performance
			9.2.2.4 Discussion
	9.3 Migration-based devices
		9.3.1 2D tunneling phototransistor for nonvolatile memory
			9.3.1.1 Device fabrication
			9.3.1.2 Working principle
			9.3.1.3 Device performance
			9.3.1.4 Discussion
		9.3.2 Perovskite device as artificial eye
			9.3.2.1 Device fabrication
			9.3.2.2 Working principle
			9.3.2.3 Device performance
			9.3.2.4 Further discussion
	9.4 Other photoelectroactive devices
	9.5 Prospect and challenge
	Acknowledgments
	References
10 Organic and hybrid photoelectroactive polymer for memories and neuromorphic computing
	10.1 Introduction
	10.2 Organic optoelectronic materials
		10.2.1 Photochromic materials
		10.2.2 Photoconductive semiconductors
		10.2.3 Electrochromic materials
	10.3 Optoelectronic memory device
		10.3.1 Resistive random access memory
		10.3.2 Optical organic field-effect transistor memory
		10.3.3 Optoelectronic logic gates
	10.4 Artificial synapses
	10.5 Conclusion
	Acknowledgement
	References
11 Metal oxide materials for photoelectroactive memories and neuromorphic computing systems
	11.1 Introduction
	11.2 Optoelectronic memristor
		11.2.1 Structure of the optoelectronic memristor devices
		11.2.2 I–V curves characteristics and light response
		11.2.3 Photoelectric response
		11.2.4 Schematic of photoelectric memristor devices
	11.3 Optogenetic tunable memristors for Boolean logic and synaptic functions
		11.3.1 Optoelectronic Boolean logic
		11.3.2 Neuromorphic computing
		11.3.3 Image memorization, preprocessing, and simulation of image recognition
	11.4 Challenge and possible approaches
		11.4.1 Challenge
		11.4.2 The possible approaches
	Acknowledgements
	Conflict of interest
	References
12 Perovskites for phototunable memories and neuromorphic computing
	12.1 Introduction
	12.2 Perovskite halides-based three-terminal phototunable flash memory
	12.3 Perovskite halides-based two-terminal phototunable RRAM
	12.4 Perovskite halides-based neuromorphic computing
	12.5 Conclusion
	References
13 Chalcogenide materials for optoelectronic memory and neuromorphic computing
	13.1 Introduction and history
	13.2 Basic properties of phase change materials
		13.2.1 Long-range and short-range order of phase change materials
		13.2.2 Switching kinetics
		13.2.3 Optical property of the phase change materials
	13.3 Application of phase change materials in optoelectronic nonvolatile memory
		13.3.1 Rewritable optical disk
		13.3.2 Electronic phase change memory
		13.3.3 All-photonic memory
	13.4 Applications of phase change memory in neuromorphic computing
		13.4.1 Phase change memories for artificial neural networks
		13.4.2 Phase change memory in optoelectronic neuromorphic systems
	13.5 Conclusion
	References
14 Device challenges, possible strategies, and conclusions
	14.1 Preparation of photoelectroactive materials
		14.1.1 Material stability and thin-film fabrication technology
		14.1.2 Optical modulation
		14.1.3 Biodegradability and biocompatibility
	14.2 Device performance optimization
		14.2.1 Device variability
		14.2.2 Switching speed
		14.2.3 Integration
	14.3 Advanced approaches for switching mechanism
	14.4 Neuromorphic computing
		14.4.1 Number of conductance states
		14.4.2 Sensory synapse
	References
Index
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