Non-Stoichiometry in Semiconductors

Content: 
INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS -ICAM91-, Page ii
Front Matter, Page iii
Copyright, Page iv
PREFACE, Pages v-vi
SYMPOSIUM INFORMATION, Page vii
Chemical composition and properties of semiconductors, Pages 3-14, J. Vedel
PRECISE COMPOSITIONAL AND TRACE—ELEMENTAL ANALYSIS BY CHEMICAL METHODS IN COMPOUND SEMICONDUCTORS, Pages 15-26, M.H. Yang, M.L. Lee, H.L. Hwang
Non-stoichiometry and aspects of heavy doping in GaAs revealed by X-ray quasi-forbidden reflection (XFR) method, Pages 27-38, Isao Fujimoto
CRYSTAL QUALITY CONTROL BY MEANS OF THE COMBINED USE OF X-RAY DIFFRACTION AND ULTRASOUND, Pages 39-44, E. Zolotoyabko
A MODEL FOR THE PHASE EXTENT OF GALLIUM ARSENIDE DERIVED FROM EXPERIMENTAL DOPANT SOLUBILITY DATA, Pages 47-57, D T J Hurle
Characterization of CuInS2 by perturbed angular correlations of γ rays, Pages 59-61, M. Brüssler, H. Metzner, K.D. Husemann, H.J. Lewerenz
Heat-treatment of AgGaS2 single crystals in sulfur atmosphere, Pages 63-68, Y. Noda, T. Kurasawa, H. Watanabe, Y. Furukawa, K. Masumoto
Defect structure of the nonstoichiometric Cu-I-III-VI2 chalcopyrite semiconductors, Pages 69-79, H.Y. Ueng, H.L. Wang
INFLUENCE OF ANNEALING METHOD ON ELECTRICAL PROPERTIES OF Hg1-xCdxTe, Pages 81-86, E. Belas, P. Höschl, P. Moravec, J. Franc
Defect Chemistry and Electrical Properties of Iron-pyrite (FeS2–x), Pages 87-92, S. Fiechter, A. Hartmann, P. Dulski, D. Jokisch, H. Tributsch
Stoichiometry control of compound semiconductor crystals, Pages 95-106, Jun-ichi Nishizawa
Modified LEC technique for growing high quality III-V Semiconductors, Pages 107-118, M. Tatsumi, T. Kawase, K. Tada
Crystals of CuInSe2 with Controlled Deviations from Stoichiometry, Pages 119-124, L.S. Yip, W.S. Weng, Z.A. Shukri, I. Shih, C.H. Champness
CuInS2 grown under elevated pressures; Part 1: Structural and defect characterization, Pages 125-131, M.L. Fearheiley, N. Dietz, S. Schroetter, H.J. Lewerenz
CuInS2 grown under elevated pressures, Part 2: Optical defect characterization, Pages 133-140, N. Dietz, M.L. Fearheiley, H.J. Lewerenz
Stoichiometry Issues in Gallium Nitride and Other Wide Gap Semiconductors, Pages 143-153, Jacques I. Pankove
QUANTITATIVE APPROACH OF NON-STOICHIOMETRIC INTERFACES FOLLOWING A GROWTH INTERRUPTION SEQUENCE: APPLICATION TO LATTICE-MATCHED InGaAs/InP QUANTUM WELLS, Pages 155-160, S. JUILLAGUET, J.P. LAURENTI, R. SCHWEDLER, K. WOLTER, J. CAMASSEL, H. KURZ
Optical characterization of strained InGaAs/InP quantum well structures, Pages 161-166, R. Schwedler, B. Gallmann, K. Wolter, Ch. Jaekel, H. Kurz, M. Stollenwerk, J. Camassel, J.P. Laurenti, S. Juillaguet
Influence of the InP-substrate temperature on the properties of MBE grown Al0.48In0.52 As layers, Pages 167-172, Eric Tournié, Yong-Hang Zhang, Klaus Ploog
A Multi-Mode Capped-Mesa-Buried-Heterostructure Laser Diode (MM-CMBH) With A Reduced Contact and Etched Trench, Pages 173-178, G.C. Chi
GROWTH MECHANISMS AND STOICHIOMETRIC PROPERTIES OF GaSb COMPOUNDS GROWN BY MOCVD, Pages 179-184, Y.K. Su, S.M. Chen, H.Y. Ueng, F.S. Juang
MICROSTRUCTURE OF SrF2 EPITAXIAL LAYER ON InP SEMICONDUCTOR AND OF THEIR INTERFACE, Pages 185-190, Pham V. Huong, E. Ollier, S. Delavoye, R. Cavagnat, B. Mombelli, A.S. Barrière, A.L. Verma
ODMR of stoichiometry defects in III-V semiconductors, Pages 193-204, J.-M. Spaeth, M. Fockele, K. Krambrock
Photoluminescence and Transport Investigations in CdTe, Pages 205-210, W. Stadler, F. Wang, R. Schwarz, K. Oettinger, B.K. Meyer, D.M. Hofmann, D. Sinerius, K.W. Benz
EFFECT OF NON-STOICHIOMETRY ON NEAR-BANDEDGE ABSORPTION AND NON-RADIATIVE RECOMBINATION IN BULK GaAs, Pages 211-216, S. Tüzemen, M.R. Brozel
Direct observation of the electrical activity of the EL2 center in its metastable configuration in Ga1-xAlxAs alloys, Pages 217-222, G. Brémond, G. Guillot, D. Stievenard, R. Azoulay
Influence of melt stoichiometry on deep hole traps in n-type LEC Gallium Arsenide, Pages 223-228, G. Marrakchi, A. Kalboussi, G. Guillot, S. Alaya, H. Maaref, R. Fornari
Chemical shift of DX centers in Ga(As1-xPx), Pages 229-236, J.M Sallese, D.K Maude, M.L Fille, U Willke, J.C Portal, P Gibart
Post-implantation defects and non-stoichiometry of I-implanted ZnSe, Pages 237-242, A. Olszewski, J. Krynicki, H. Rzewuski, R. Groetzschel
Photoluminescence of GaAs1-xPx, Pages 243-248, M.S. Feng, H.L. Hsiao, H.L. Hwang
PHOTOLUMINESCENCE STUDY OF CdTe:Sm CRYSTALS, Pages 249-253, P. HAN, W. SHAN, T. ZHOU, K.J. MA, S.C. SHEN
Stoichiometric effects on the properties of Cu based chalcopyrite I-III-VI2 semiconductor thin films, Pages 257-268, Joseph J. Loferski
P-d hybridization of sulfur annealed copper indium disulfide, Pages 269-274, T.M. Hsu, H.L. Hwang
Chemical and structural characterization of thin films of CuInSe2, Pages 275-280, B.H. Tseng, C.A. Wert
DLTS investigation of the defect chemistry of non-stoichiometric CuInSe2, Pages 281-286, H.J. Möller, E. Rodak
Deep levels in monocrystalline CuInSe2, Pages 287-292, L. Li, I. Shih
OXIDE IDENTIFICATION BY PHOTOLUMINESCENCE, Pages 295-300, B. LEFEZ, M. LENGLET
Correlations between structure and electrical properties of tin-doped indium oxide thin films: an EXAFS investigation, Pages 301-306, Ph. Parent, H. Dexpert, G. Tburillon, J.-M. Grimal
Oxygen Non-Stoichiometry in Thermally Annealed and Hydrogen Implanted TiO2 Thin Films Observed by Raman Spectroscopy, Pages 307-313, A. Turković, M. Ivanda, J. Tudorić-Ghemo, N. Godinović, I. Sorić
Electrical properties of doped and nonstoichiometric SnO2-δ and its stoichiometry control by co-firing with Sn2–a2+ M2-b Snb4+ O7-a-b/2 (M = Ta, Nb), Pages 315-320, G. Behr, G. Krabbes, U. Wiesner, W. Bieger, J. Werner
AUTHOR INDEX, Pages 321-322