Microscopy of Semiconducting Materials 2007

Front Matter....Pages i-xiv
The Puzzle of Exciton Localisation in GaN-Based Structures: TEM, AFM and 3D APFIM Hold the Key....Pages 3-12
Elastic Strain Distribution in GaN/AlN Quantum Dot Structures: Theory and Experiment....Pages 13-16
Concentration Evaluation in Nanometre-Sized In x Ga 1-x N Islands Using Transmission Electron Microscopy....Pages 17-20
Optical Properties of InGaN Quantum Dots With and Without a GaN Capping Layer....Pages 21-24
Strain Relaxation in an AlGaN/GaN Quantum Well System....Pages 25-28
Characterisation of In x Al 1-x N Epilayers Grown on GaN....Pages 29-32
Generation of Misfit Dislocations in Highly Mismatched GaN/AlN Layers....Pages 33-36
InN Nanorods and Epilayers: Similarities and Differences....Pages 37-40
Residual Strain Variations in MBE-Grown InN Thin Films....Pages 41-44
Growth of c-Plane GaN Films on (100) γ-LiAlO 2 by Hydride Vapour Phase Epitaxy....Pages 45-48
Interaction of Stacking Faults in Wurtzite a -Plane GaN on r -Plane Sapphire....Pages 49-52
Composite Substrates for GaN Growth....Pages 53-56
GaN Layers Grown by MOCVD on Composite SiC Substrate....Pages 57-60
An Initial Exploration of GaN Grown on a Ge-(111) Substrate....Pages 61-64
Electron Microscopy Characterization of a Graded AlN/GaN Multilayer Grown by Plasma-Assisted MBE....Pages 66-68
The Effect of Silane Treatment of Al x Ga 1−x N Surfaces....Pages 69-72
Quantitative Analysis of Deformation Around a Nanoindentation in GaN by STEM Diffraction....Pages 73-76
Microstructure of (Ga,Fe)N Films Grown by Metal-Organic Chemical Vapour Deposition....Pages 77-80
Nanostructures on GaN by Microsphere Lithography....Pages 81-84
On the Nature of Eu in Eu-Doped GaN....Pages 85-88
Recent Studies of Heteroepitaxial Systems....Pages 91-98
Nitrogen-Enhanced Indium Segregation in (Ga,In)(N,As)/GaAs Multiple Quantum Wells....Pages 99-102
Nanoscale Characterisation of MBE-Grown GaMnN/(001) GaAs....Pages 103-106
Antiphase Boundaries in GaAs/Ge and GaP/Si....Pages 107-110
Investigation of the Local Ge Concentration in Si/SiGe Multi-QW Structures by CBED Analysis and FEM Calculations....Pages 111-114
Crystal Lattice Defects in MBE Grown Si Layers Heavily Doped with Er....Pages 115-118
Epitaxial (001) Ge on Crystalline Oxide Grown on (001) Si....Pages 119-122
Analysis of Ge:Mn Magnetic Semiconductor Layers by XPS and Auger Electron Spectroscopy/Microscopy....Pages 123-126
Reduction of Threading Dislocations in Epitaxial ZnO Films Grown on Sapphire (0001)....Pages 127-130
Progress in Aberration-Corrected High-Resolution Transmission Electron Microscopy of Crystalline Solids....Pages 133-148
Strain Measurements in SiGe Devices by Aberration-Corrected High Resolution Electron Microscopy....Pages 149-152
(S)TEM Characterisation of InAs/MgO/Co Multilayers....Pages 153-156
Core Composition of Partial Dislocations in N-Doped 4H-SiC Determined by TEM Techniques, Dislocation Core Reconstruction and Image Contrast Analysis....Pages 157-160
Three-Dimensional Atom Probe Characterisation of III-Nitride Quantum Well Structures....Pages 161-164
Novel Method for the Measurement of STEM Specimen Thickness by HAADF Imaging....Pages 165-168
STEMSIM—a New Software Tool for Simulation of STEM HAADF Z-Contrast Imaging....Pages 170-172
On the Role of Specimen Thickness in Chemistry Quantification by HAADF....Pages 173-176
Accurate and Fast Multislice Simulations of HAADF Image Contrast by Parallel Computing....Pages 177-180
Z-contrast STEM 3D Information by Abel transform in Systems with Rotational Symmetry....Pages 181-184
Quantifying the Top-Bottom Effect in Energy-Dispersive X-Ray Spectroscopy of Nanostructures Embedded in Thin Films....Pages 185-188
Effect of Temperature on the 002 Electron Structure Factor and its Consequence for the Quantification of Ternary and Quaternary III–V Crystals....Pages 189-194
Calculation of Debye-Waller Temperature Factors for GaAs....Pages 195-198
The Use of the Geometrical Phase Analysis to Measure Strain in Nearly Periodic Images....Pages 199-202
Cross Section High Resolution Imaging of Polymer-Based Materials....Pages 203-206
Direct Observation of Carbon Nanotube Growth by Environmental Transmission Electron Microscopy....Pages 209-212
Band-Gap Modification Induced in HgTe by Dimensional Constraint in Carbon Nanotubes: Effect of Nanotube Diameter on Microstructure....Pages 213-216
Gold Catalyzed Silicon Nanowires: Defects in the Wires and Gold on the Wires....Pages 217-220
Electron Microscopy Analysis of AlGaN/GaN Nanowires Grown by Catalyst-Assisted Molecular Beam Epitaxy....Pages 221-224
Epitaxial Growth of Single Crystalline GaN Nanowires on (0001) Al 2 O 3 ....Pages 225-228
Structural Characterisation of GaP <111>B Nanowires by HRTEM....Pages 229-232
Structural and Chemical Properties of ZnTe Nanowires Grown on GaAs....Pages 233-236
TEM Characterization of ZnO Nanorods....Pages 237-240
TEM Characterization of ZnO Nanorods....Pages 241-246
TEM Characterization of ZnO Nanorods....Pages 247-250
Transmission Electron Microscopy Study of Sb-Based Quantum Dots....Pages 251-254
TEM Characterization of Self-Organized (In,Ga)N Quantum Dots....Pages 255-258
Investigating the Capping of InAs Quantum Dots by InGaAs....Pages 259-262
Comparing InGaAs and GaAsSb Metamorphic Buffer Layers on GaAs Substrates for InAs Quantum Dots Emitting at 1.55μm....Pages 263-268
Structural and Compositional Properties of Strain-Symmetrized SiGe/Si Heterostructures....Pages 269-272
EELS and STEM Assessment of Composition Modulation in InAlAs Tensile Buffer Layers of InGaAs /InAlAs /(100)InP Structures....Pages 273-276
In situ Observation of the Growth of Tungsten Oxide Nanostructures....Pages 277-280
Gas Sensing Properties of Vapour-Deposited Tungsten Oxide Nanostructures....Pages 281-284
Morphology of Semiconductor Nanoparticles....Pages 285-288
Light Emission from Si Nanostructures....Pages 291-300
Hydrogenated Nanocrystalline Silicon Investigated by Conductive Atomic Force Microscopy....Pages 301-304
Structural Characterization of Nanocrystalline Silicon Layers Grown by LEPECVD for Optoelectronic Applications....Pages 305-308
Electron Tomography of Mesoporous Silica for Gas Sensor Applications....Pages 309-312
Electron Energy-Loss Spectrum Imaging of an HfSiO High- k Dielectric Stack with a TaN Metal Gate....Pages 313-316
Elemental Profiling of III-V MOSFET High- k Dielectric Gate Stacks Using EELS Spectrum Imaging....Pages 317-320
Low-Energy Ion-Beam-Synthesis of Semiconductor Nanocrystals in Very Thin High-k Layers for Memory Applications....Pages 321-324
Nucleation, Crystallisation and Phase Segregation in HfO 2 and HfSiO....Pages 325-328
High Accuracy and Resolution for the Separation of Nickel Silicide Polymorphs by Improved Analyses of EELS Spectra....Pages 329-332
TEM Study of Ytterbium Silicide Thin Films....Pages 333-336
TEM Study of the Silicidation Process in Pt/Si and Ir/Si Structures....Pages 337-340
The Dielectric Properties of Co-Implanted SiO 2 Investigated Using Spatially-Resolved EELS....Pages 341-344
Removing Relativistic Effects in EELS for the Determination of Optical Properties....Pages 345-348
Analytical STEM Comparative Study of the Incorporation of Covalent (Ge) or Heterovalent (As) Atoms in Silicon Crystal....Pages 349-352
Lattice Location Determination of Ge in SiC by ALCHEMI....Pages 353-358
Moore's Law and its Effect on Microscopy in the Semiconductor Industry....Pages 361-373
Tomographic Analysis of a FinFET Structure....Pages 375-378
3—D Characterisation of the Electrostatic Potential in an Electrically Biased Silicon Device....Pages 379-382
Three-Dimensional Field Models for Reverse Biased P-N Junctions....Pages 383-386
Automated Quantification of Dimensions on Tomographic Reconstructions of Semiconductor Devices....Pages 387-390
Dopant Profiling in the TEM: Progress Towards Quantitative Electron Holography....Pages 391-394
Observation of Dopant Distribution in Compound Semiconductors Using Off-axis Electron Holography....Pages 395-398
Dopant Profiling of Silicon Calibration Specimens by Off-Axis Electron Holography....Pages 399-402
Novel Approach for Visualizing Implants in Deep Submicron Microelectronic Devices Using Dopant Selective Etching and Low keV SEM....Pages 403-406
Quantitative Dopant Profiling in the SEM Including Surface States....Pages 407-410
On the Asymmetric Splitting of CBED HOLZ Lines under the Gate of Recessed SiGe Source/Drain Transistors....Pages 411-414
CBED and FE Study of Thin Foil Relaxation in Cross-Section Samples of Si /Si 1-x Ge x and Si /Si 1-x Ge x /Si Heterostructures....Pages 415-418
Stress and Strain Measurement in Stressed Silicon Lines....Pages 419-422
Measuring Strain in Semiconductor Nanostructures by Convergent Beam Electron Diffraction....Pages 423-428
Nano-FIB from Research to Applications — a European Scalpel for Nanosciences....Pages 431-440
Advanced Focused Ion Beam Specimen Preparation for Examination by Off-Axis Electron Holography....Pages 441-444
Critical Thickness for Semiconductor Specimens Prepared using Focused Ion Beam Milling....Pages 446-448
Organic-Based Micropillar Structure Fabrication by Advanced Focused Ion Beam Milling Techniques....Pages 449-452
Controlled Band Gap Modulation of Hydrogenated Dilute Nitrides by SEM-Cathodoluminescence....Pages 453-458
Interdiffusion as the First Step of GaN Quantum Dot Degradation Demonstrated by Cathodoluminescence Experiments....Pages 459-462
Calibration and Applications of Scanning Capacitance Microscopy: n-Type GaN....Pages 463-466
The Factors Influencing the Stability of Scanning Capacitance Spectroscopy....Pages 467-470
Growth and in vivo STM of III-V Compound Semiconductors....Pages 471-476
Mapping Defects in Dielectrics with Dynamic Secondary Electron Contrast in the low Vacuum SEM....Pages 477-480
EBIC Characterization of Light Emitting Structures Containing InGaN/GaN MQW....Pages 481-484
EBIC Characterisation of Diffusion and Recombination of Minority Carriers in GaN-Based LEDs....Pages 485-488
A Parametric Study of a Diode-Resistor Contrast Model for SEM-REBIC of Electroceramics....Pages 490-492
Back Matter....Pages 493-497