Laser and Electron Beam Processing of Materials

Content: 
Inside Front Cover, Page ii
Front Matter, Page iii
Copyright, Page iv
PREFACE, Pages xv-xvi, C.W. WHITE, P.S. PEERCY
ACKNOWLEDGMENTS, Pages xvii-xviii
SOME THOUGHTS ON DIRECTIONS IN MATERIALS SCIENCE, Pages 1-5, David Turnbull
COUPLING OF BEAM ENERGY TO SOLIDS, Pages 6-19, Martin von Allmen
TRANSIENT LASER-INDUCED PROCESSES IN SEMICONDUCTORS, Pages 20-36, W.L. Brown
MACROSCOPIC THEORY OF PULSED LASER ANNEALING, Pages 37-52, R.F. Wood, J.C. Wang, G.E. Giles, J.R. Kirkpatrick
EVIDENCE FOR AND NATURE OF A NONTHERMAL MECHANISM OF PULSED LASER ANNEALING OF Si, Pages 53-58, J.A. Van Vechten
PLASMA BOTTLENECKS: DYNAMICS OF LASER-INDUCED PLASMAS, Pages 59-64, Ellen J. Yoffa
MELTING BY PULSED LASER IRRADIATION, Pages 65-70, J. Narayan, C.W. White
RAMAN TEMPERATURE MEASUREMENTS DURING LASER HEATING OF SILICON, Pages 71-76, A. Compaan, H.W. Lo
MODELLING OF SOLID-PHASE THIN-FILM REACTIONS INDUCED BY A SCANNING CW LASER, Pages 77-82, R.B. Gold, J.F. Gibbons
ADIABATIC APPROACH TO TRANSPORT PROCESSES: A GENERAL ANALYTIC TECHNIQUE FOR NONLINEAR DYNAMIC HEAT AND MASS DIFFUSION, Pages 83-88, Dae M. Kim, Rajiv R. Shah, D. Lloyd Crosthwait
RAPID SOLIDIFICATION, Pages 89-103, J.W. Cahn, S.R. Coriell, W.J. Boettinger
SOLUTE TRAPPING, Pages 104-110, K.A. Jackson, G.H. Gilmer, H.J. Leamy
SUPERSATURATED SUBSTITUTIONAL ALLOYS IN SILICON FORMED BY ION IMPLANTATION AND LASER ANNEALING, Pages 111-116, C.W. White, S.R. Wilson, B.R. Appleton, F.W. Young Jr., J. Narayan
SOLUBILITY LIMIT OF DOPANTS IN LASER-TREATED SILICON, Pages 117-123, E. Fogarassy, R. Stuck, J.J., A. Grob, P. Siffert
SURFACE SEGREGATION IN LASER ANNEALING OF ION-IMPLANTED SILICON, Pages 124-129, C.W. White, S.R. Wilson, B.R. Appleton, J. Narayan
SURFACE ACCUMULATION OF IMPURITIES AFTER LASER-INDUCED MELTING, Pages 130-136, P. Baeri, S. U.Campisano, M.G. Grimaldi, E. Rimini
SEGREGATION EFFECTS IN PULSED LASER ANNEALING OF ION-IMPLANTED SILICON, Pages 137-142, D. Hoonhout, F.W. Saris
THE DIRECT RELATION BETWEEN SEGREGATION IN PULSED LASER ANNEALING AND EQUILIBRIUM CRYSTAL GROWTH, Pages 143-148, F. Morehead
LASER-INDUCED ORDER-DISORDER TRANSITIONS IN SILICON BY PULSED UV LASER, Pages 149-155, R. Tsu, R.T. Hodgson, T.Y. Tan, J.E. Baglin
PICOSECOND LASER PULSE-INDUCED MELTING AND RESOLIDIFCATION MORPHOLOGY ON SILICON, Pages 156-161, P.L. Liu, R. Yen, N. Bloembergen, R.T. Hodgson
DYNAMIC BEHAVIOR OF 30-ps PULSED-LASER ANNEALING IN ION-IMPLANTED Si, Pages 162-167, K. Murakami, K. Gamo, S. Namba, M. Kawabe, Y. Aoyagi
LASER-INDUCED EPITAXY IN ION-IMPLANTED AND -DEPOSITED AMORPHOUS LAYERS, Pages 168-182, G. Foti
DAMAGE RECRYSTALLIZATION PHENOMENA AND IMPURITY SEGREGATION IN ION-IMPLANTED AND LASER-ANNEALED SILICON, Pages 183-188, A.G. Cullis, H.C. Webber, D.V. McCaughan, N.G. Chew
ON THRESHOLD EFFECTS IN LASER ANNEALING OF SEMICONDUCTORS, Pages 189-194, M. Bertolotti, G. Vitali, W.E. Spear
ELECTROLYTE ELECTROREFLECTANCE INVESTIGATION OF ION-DAMAGED LASER-ANNEALED SILICON, Pages 195-200, Fred H. Pollak, Raphael Tsu, E. Mendez
SILICON SURFACE STRUCTURE AND SURFACE IMPURITIES AFTER PULSED LASER ANNEALING, Pages 201-207, D.M. Zehner, C.W. White, G.W. Ownby, W.H. Christie
PHOTOACOUSTIC DETECTION METHODS FOR CHARACTERIZING LASER IRRADIATION AND RECRYSTALLIZATION OF SEMICONDUCTORS, Pages 208-214, J.F. McClelland, R.N. Kniseley
DIAGNOSTICS OF LASER-ANNEALED SEMICONDUCTOR MATERIALS USING PHOTOACOUSTIC, RELATED OPTICAL, AND RUTHERFORD BACKSCATTERING TECHNIQUES, Pages 215-220, R.A. McFarlane, H.L. Dunlap, L.D. Hess, G.L. Olson
LASER-INDUCED EXPLOSIVE RADIAL CRYSTALLIZATION OF DEPOSITED Ge AND Si THIN FILMS, Pages 221-226, R.B. Gold, J.F. Gibbons, T.J. Magee, J. Peng, R. Ormond, V.R. Deline, C.A. Evans Jr.
AN ANALYSIS OF THE EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS LAYERS, Pages 227-233, G.H. Gilmer, H.J. Leamy
SOLID-PHASE CRYSTALLIZATION PRODUCED BY LASER SCANNING OF AMORPHOUS Ge FILMS: THE ROLE OF LATENT HEAT IN CRYSTALLIZATION-FRONT DYNAMICS, Pages 234-240, H.J. Zeiger, J.C.C. Fan, B.J. Palm, R.P. Gale, R.L. Chapman
LASER AND THERMAL ANNEALING OF ION-IMPLANTED P-TYPE DOPANTS IN SILICON, Pages 241-246, M.F. Hamer, A.G. Cullis, D.V. McCaughan, J.M. Keen, H.C. Webber, N.G. Chew
LASER ANNEALING OF HIGH DOSE P+, As+, B+, O+ AND C+ IMPLANTED Si, Pages 247-252, M. Tamura, N. Natsuaki, T. Tokuyama
STRUCTURE STABILITY OF ARSENIC-IMPLANTED Si AFTER PULSED LASER IRRADIATION, Pages 253-259, W.K. Chu, S.R. Mader, E. Rimini
INFRARED REFLECTIVITY AND TRANSMISSIVITY OF BORON-IMPLANTED, LASER-ANNEALED SILICON, Pages 260-265, Herbert Engstrom
LASER-ANNEALED POLYCRYSTALLINE SILICON CHARACTERISTICS, Pages 266-271, Yasuo Wada, Masao Tamura, Takashi Tokuyama
CHARACTERIZATION OF IMPLANTED LAYERS AFTER LASER AND ELECTRON BEAM ANNEALING, Pages 272-277, G. G.Bentini, R. Galloni, P. G.Merli, L. Pedulli, I. Vecchi, F. Zignani
CHARACTERIZATION OF SILICON LAYERS IMPLANTED BY LOW SPEED MOLECULAR IONS AND ANNEALED BY A PULSED LASER, Pages 278-284, J.C. Muller, P. Siffert, J. Michel, E. Fabre
Electronic Properties of Ion-Implanted Silicon Annealed with Microsecond Dye-Laser Pulses, Pages 285-290, D.R. Myers, P. Roitman, S. Mayo, D. Horowitz
CW LASER ANNEALING OF ION-IMPLANTED POLYCRYSTALLINE SILICON FILMS, Pages 291-296, Gregory L. Olson, LaVerne D. Hess, Giora Yaron, Joseph Peng
PHYSICAL PROPERTIES OF ION-IMPLANTED SEM-ANNEALED SILICON, Pages 297-302, J.L. Regolini, N.M. Johnson, R. Sinclair, T.W. Sigmon, J.F. Gibbons
OPTIMIZATION OF TWO WAVELENGTH LASER ANNEALING OF IMPLANTED SEMICONDUCTORS, Pages 303-308, M.C. Newstein, K.C. Liu, R. Kaplan
LASER AND ELECTRON BEAM ANNEALING OF GaAs, Pages 309-321, F.H. Eisen
LASER ANNEALING EFFECTS IN ION-IMPLANTED GaAs, Pages 322-327, K. Gamo, Y. Yuba, A.H. Oraby, K. Murakami, S. Namba, Y. Kawasaki
PULSED E-BEAM AND RUBY LASER ANNEALING OF ION IMPLANTED GaAs, Pages 328-333, P.A. Pianetta, C.A. Stolte, J.L. Hansen
ANNEALING OF IMPLANTED LAYERS IN COMPOUND SEMICONDUCTORS BY LOCALIZED BEAM HEATING TECHNIQUES, Pages 334-340, C. Lawrence Anderson, H.L. Dunlap, L.D. Hess, G.L. Olson, K.V. Vaidyanathan
ANNEALING OF ION-IMPLANTED GaAs WITH A PULSED RUBY LASER, Pages 341-346, S.G. Liu, C.P. Wu, C.W. Magee
TRANSIENT ANNEALING OF IMPLANTED GaAs BY A PULSED ELECTRON BEAM, Pages 347-353, I. Golecki, M-A. Nicolet, M. Mäenpää, J.L. Tandon, C.G. Kirkpatrick, D.K. Sadana, J. Washburn
A COMPARISON OF LASER – ANNEALED DONOR AND ACCEPTOR IONS IMPLANTED INTO GaAs, Pages 354-359, M. H.Badawi, B. J.Sealy, S. S.Kular, N. J.Barrett, N. G.Emerson, K. G.Stephens, G. R.Booker, M. Hockley
ANNEALING OF Te-IMPLANTED GaAs LAYERS USING A Nd-YAG LASER BEAM OF LARGE DIMENSION, Pages 360-366, G.M. Martin, M. Steers, C. Venger, F. Simondet, S. Rigo
OPTICAL PROPERTIES OF LASER-ANNEALED CdSe THIN FILMS, Pages 367-372, R.R. Parsons, J.A. Rostworowski, W.D. Westwood, F.R. Shepherd
PHOTOLUMINESCENT PROPERTIES OF LASER-ANNEALED GaAlAs, Pages 373-378, R.R. Parsons, J.A. Rostworowski, A.J. Springthorpe, J.C. Dyment
LASER ANNEALING OF Pb-IMPLANTED InSb, Pages 379-384, A. Bontemps, S.U. Campisano, G. Foti, E. Jannitti
DEFECTS IN LASER-PROCESSED SEMICONDUCTORS, Pages 385-396, L.C. Kimerling, J.L. Benton
STRUCTURAL DEFECTS IN LASER- AND ELECTRON-BEAM-ANNEALED SILICON, Pages 397-410, J. Narayan
HYDROGEN AND DEFECTS IN LASER-ANNEALED AMORPHOUS SILICON, Pages 411-416, P.S. Peercy, H.J. Stein
LASER ANNEALING OF a-Si:H, Pages 417-422, M. Toulemonde, J.C. Muller, P. Siffert, B. Bourdon
A COMPARISON OF ION-IMPLANTATION-INDUCED DEEP LEVELS IN SCANNED ELECTRON-BEAM-ANNEALED AND CW LASER-ANNEALED SILICON, Pages 423-429, N.M. Johnson, D.J. Bartelink, M.D. Moyer, J.F. Gibbons, A. Lietoila, K.N. Ratnakumar, J.L. Regolini
POST ILLUMINATION ANNEALING OF DEFECTS IN LASER-PROCESSED SILICON, Pages 430-434, J.L. Benton, C.J. Doherty, S.D. Ferris, L.C. Kimerling, H.J. Leamy, G.K. Celler
DEFECT LUMINESCENCE IN CW LASER-ANNEALED SILICON, Pages 435-440, R.A. Street, N.M. Johnson, A. Lietoila
EPR OF LASER-ANNEALED, ION-IMPLANTED SILICON, Pages 441-446, K.L. Brower, P.S. Peercy
HIGHER ORDER DEFECTS IN SILICON, Pages 447-453, T.Y. Tan, R. Tsu, J.R. Lankard
TEM AND RBS STUDIES OF SINGLE AND DOUBLE DISCRETE BURIED DAMAGE LAYERS IN P+-IMPLANTED Si ON SUBSEQUENT LASER ANNEALING, Pages 454-460, D.K. Sadana, M. Strathman, J. Washburn, G.R. Booker
POSITRON ANNIHILATION IN ION IMPLANTED, LASER-ANNEALED SILICON, Pages 461-466, F.H. Hsu, C.W. White
OVERVIEW OF OHMIC-CONTACT FORMATION ON N-TYPE GaAs BY LASER AND ELECTRON BEAM ANNEALING, Pages 467-480, Gisela Eckhardt
OHMIC CONTACTS PRODUCED BY LASER BEAMS TO INDIUM IMPLANTED INTO AND INDIUM DEPOSITED ONTO GaAs, Pages 481-486, H.B. Harrison, J.S. Williams
PULSED ELECTRON BEAM ALLOYING OF Au-Ge/Pt OHMIC CONTACTS TO GaAs, Pages 487-493, J.L. Tandon, C.G. Kirkpatrick, B.M. Welch, P. Fleming Rockwell
FABRICATION OF OHMIC CONTACT ON p-TYPE InP USING ION IMPLANTATION AND LASER ANNEALING, Pages 494-499, Z.L. Liau, N.L. DeMeo, J.P. Donnelly, D.E. Mull, R. Bradbury, J.P. Lorenzo
REDISTRIBUTION OF IMPLANTED Zn IN InP AFTER Q-SWITCHED LASER ANNEALING AND THE RELATED SPECIFIC CONTACT RESISTANCE, Pages 500-505, Z.L. Liau, N.L. DeMeo, J.P. Donnelly, C.G. Hopkins, J.C. Norberg, C.A. Evans Jr., J.P. Lorenzo
METAL-SEMICONDUCTOR INTERFACES BY PULSED ELECTRON BEAM PROCESSING, Pages 506-510, P. Younger, A. Melas, J. Minnucci, A. Kirkpatrick, A. Greenwald
LASER-AND ION-BEAM-INDUCED REACTIONS, Pages 511-523, S.S. Lau, J.W. Mayer, B.Y. Tsaur, M. von Allmen
STRUCTURE OF LASER-PRODUCED SILICIDE LAYERS, Pages 524-529, M. von Allmen, S.S. Lau, T.T. Sheng, M. Wittmer
CW LASER-INDUCED REACTIONS FOR SILICIDE FORMATION, Pages 530-536, T. Shibata, T.W. Sigmon, J.F. Gibbons
SILICIDE FORMATION BY MILLISECOND LASER PULSES, Pages 537-543, C.A. Conti, C.J. Doherty, K.C.R. Chiu, T.T. Sheng, H.J. Leamy
PHASE TRANSFORMATION IN LASER-IRRADIATED Au-Si THIN FILMS, Pages 544-548, S.S. Lau, M. von Allmen, M. Mäenpää, B.Y. Tsaur
CHARACTERISTICS OF P+N ALLOY JUNCTIONS PRODUCED BY SINGLE LASER PULSES, Pages 549-555, H.G. Parks, K. Rose
STRUCTURE OF P-N JUNCTIONS ALLOYED BY PULSED ELECTRON BEAMS, Pages 556-561, M. Mäenpää, M-A. Nicolet, D.K. Sadana
CW LASER ANNEALING STUDIES OF DEPOSITED FILMS, Pages 562-568, L.D. Hess, J.A. Roth, G.L. Olson, H.L. Dunlap, M. von Allmen, J. Peng
SCANNING CW-LASER-INDUCED CRYSTALLIZATION OF SILICON ON AMORPHOUS SUBSTRATES, Pages 569-574, D.K. Biegelsen, N.M. Johnson, G.T. McKinley, M.D. Moyer
PULSED ELECTRON BEAM LIQUID EPITAXY, Pages 575-580, A.C. Greenwald, J.J. Comer
CELLULAR SOLIDIFICATION OF LASER PROCESSED Ge-Si HETEROJUNCTIONS, Pages 581-587, H.J. Leamy, C.J. Doherty, K.C.R. Chiu, J.M. Poate, T.T. Sheng, G.K. Celler
POTENTIAL APPLICATIONS OF TRANSIENT PROCESSES TO MATERIAL FORMATION, Pages 588-592, A.R. Kirkpatrick
APPLICATION OF CW BEAM PROCESSING TO SEMICONDUCTOR DEVICE FABRICATION, Pages 593-607, J.F. Gibbons, A. Lietoila, Y.I. Nissim, F.C. Wu
APPLICATION OF LASER ANNEALING TO SILICON DEVICE FABRICATION, Pages 608-620, Takashi Tokuyama
LASER-ANNEALED SILICON IMPATT DIODES, Pages 621-625, L.D. Hess, G.L. Olson, C.R. Ito, E.M. Nakaji
ELECTRICAL CHARACTERISTICS OF LASER-ANNEALED POLYSILICON RESISTORS FOR DEVICE APPLICATIONS, Pages 626-631, Giora Yaron, LaVerne D. Hess, Gregory L. Olson
PROPERTIES OF MOSFETS FABRICATED IN LASER-ANNEALED POLYSILICON FILMS, Pages 632-638, K.F. Lee, J.F. Gibbons, K.C. Saraswat, T.I. Kamins, H.W. Lam, A.F. Tasch Jr., T.C. Holloway
PULSED LASER AND ELECTRON BEAM ANNEALING OF SILICON DIOXIDE LAYERS ON SILICON STRUCTURES, Pages 639-644, J. Stephen, B.J. Smith, N.G. Blamires
ELECTRON BEAM ANNEALING OF ARSENIC IMPLANTED SILICON IN WINDOWS DEFINED BY OXIDE, Pages 645-650, J.M. Leas, P.J. Smith, A. Nagarajan, A. Leighton
LASER PROCESSING OF POLYCRYSTALLINE SILICON SOLAR CELLS, Pages 651-657, R.T. Young, R.F. Wood, J. Narayan, C.W. White
ELECTRON BEAM AND LASER PROCESS APPLICATIONS FOR SILICON SOLAR CELLS, Pages 658-663, J.A. Minnucci, K.W. Matthei, A.C. Greenwald, R.G. Little, A.R. Kirkpatrick
CHARACTERIZATION OF ION-IMPLANTED AND PULSE-LASER-ANNEALED JUNCTIONS; APPLICATION TO SILICON SOLAR CELLS, Pages 664-670, J. Michel, E. Fabre, I. Yamada, D. Hoonhout, F. Saris
LASER-INDUCED PHOTOCHEMICAL REACTIONS FOR ELECTRONIC DEVICE FABRICATION, Pages 671-677, D.J. Ehrlich, T.F. Deutsch, R.M. Osgood Jr.
THE EFFECTS OF LASER IRRADIATION ON MONOLITHIC RESISTORS, Pages 678-683, J.E. Small, D.L. Parker, W.A. Porter
INFLUENCE OF LASER IRRADIATION ON DIODE-LEAKAGE CURRENT, Pages 684-690, W. Severin, W.A. Porter, P.E. Allen
METASTABLE SURFACE ALLOYS, Pages 691-701, J.M. Poate
IMPURITY DIFFUSION IN ION-IMPLANTED A1 DURING ELECTRON-BEAM-PULSED ANNEALING, Pages 702-707, W.R. Wampler, D.M. Follstaedt, S.T. Picraux
PRECIPITATION IN ION-IMPLANTED AL DURING ELECTRON-BEAM-PULSED ANNEALING, Pages 708-713, D.M. Follstaedt, S.T. Picraux, W.R. Wampler
ION IMPLANTATION AND LASER ANNEALING OF HIGH TC SUPERCONDUCTING MATERIALS, Pages 714-720, B.R. Appleton, C.W. White, B. Stritzker, O. Meyer, J.R. Gavaler, A.I. Braginski, M. Ashkin
LASER ALLOYING OF DEPOSITED METAL FILMS ON NICKEL, Pages 721-727, Clifton W. Draper, Carolyn M. Preece, Dale C. Jacobson, Leif Buene, John M. Poate
PERMANENT LOCAL MODIFICATION OF THE MAGNETIC BUBBLE PROPERTIES OF EPITAXIAL GARNET FILMS BY LASER ANNEALING, Pages 728-733, R.T. Hodgson, E.A. Giess, L. Schultz, T.O. Sedgwick
CONSTITUTION AND MICROSTRUCTURE OF Ag-Cu ALLOYS PRODUCED BY CONTINUOUS LASER MELT QUENCHING, Pages 734-739, David G. Beck, S.M. Copley, M. Bass
SOLIDIFICATION MICROSTRUCTURE AND MICROSEGREGATION OF LASER-GLAZED Ni-Al-Ta AND Ni-Al-Cr DENDRITIC MONOCRYSTALS, Pages 740-746, R. Kadalbal, J.J. Montoya-Cruz, T.Z. Kattamis
LASER AND ELECTRON BEAM MELTING OF IRON BASE HARD MATERIALS, Pages 747-753, B.G. Lewis, D.A. Gilbert, P.R. Strutt
LASER SURFACE MELTING WITH CARBIDE PARTICLE INJECTION, Pages 754-759, R.J. Schaefer, T.R. Tucker, J.D. Ayers
CONSOLIDATION OF METAL COATINGS BY ELECTRON BEAM MELTING, Pages 760-765, T.R. Tucker, J.D. Ayers, R.J. Schaefer
INDEX OF CONTRIBUTORS, Pages 767-769