Ion Implantation Technology–92

Content: 
Front Matter, Page iii
Copyright, Page iv
Editorial, Pages v-vi, Daniel F. Downey, Marvin Farley
Ion implantation in future MOS technology, Pages 3-6, Al F. Tasch
Damage analysis and engineering for ion implantation in ULSI process, Pages 7-10, Morio Inoue, Shinji Fujii, Genshu Fuse
High-voltage implantation facility at GM Research, Pages 13-17, Gerard W. Malaczynski, Alaa A. Elmoursi, Aboud H. Hamdi, Xiaohong Qiu
Performance characteristics of the Genus Inc. 1510 high energy ion implantation system, Pages 18-26, John P. O'Connor, Nobuhiro Tokoro, John Adamik
A 2 MV heavy ion Van de Graaff implanter for research and development, Pages 27-31, P.L.F. Hemment, B.J. Sealy, K.G. Stephens, J.E. Mynard, C. Jeynes, M.D. Browton, R.J. Wilson, M.X. Ma, A. Cansell, D.J.W. Mous, R. Koudijs
Metal-sheet-beam formation using an impregnated electrode-type liquid-metal ion source with a linear array of emission points, Pages 35-38, Yasuhito Gotoh, Junzo Ishikawa, Hiroshi Tsuji, Norihisa Fukayama, Yasushi Ogata
SIMOX material manufacturability, Pages 41-46, J. Margail
Diffusion and lifetime engineering in silicon, Pages 47-52, S. Coffa, N. Tavolo, F. Frisina, G. Ferla, S.U. Campisano
Materials and device issues in the formation of sub-100-nm junctions, Pages 53-59, CM. Osburn, S. Chevacharoenkul, Q.F. Wang, K. Markus, G.E. McGuire, P.L. Smith
Ion beam synthesis of α and β FeSi2 layers, Pages 60-64, Tim D. Hunt, Brian J. Sealy, Karen J. Reeson, Russell M. Gwilliam, Kevin P. Homewood, Richard J. Wilson, C. Douglas Meekison, G. Roger Booker
Defect formation in high dose oxygen implanted silicon, Pages 65-69, D. Venables, K.S. Jones
Iron gettering and doping in silicon due to MeV carbon implantation, Pages 70-74, W. Skorupa, R. Kögler, K. Schmalz, P. Gaworzewski, G. Morgenstern, H. Syhre
B diffusion in Si predamaged with Si+ or Ge+ and preannealed at 200–1000°C, Pages 75-79, Masataka Kase, Yoshio Kikuchi, Yuji Kataoka, Haruhisa Mori
Damage accumulation and amorphization in GaAs–AlGaAs structures, Pages 80-83, J.S. Williams, C. Jagadish, A. Clark, G. Li, C.A. Larsen
Erbium implantation in optical microcavities for controlled spontaneous emission, Pages 84-88, A.M. Vredenberg, N.E.J. Hunt, E.F. Schubert, P.C. Becker, D.C. Jacobson, J.M. Poate, G.J. Zydzik
Positron annihilation study of P implanted Si, Pages 89-93, P. Asoka-Kumar, P. Sferlazzo, H.L. Au, K.G. Lynn
The use of multi-species implantation for carrier profile control in GaAs MESFETs fabricated using silicon ion implantation, Pages 94-97, R.M. Gwilliam, R.J. Wilson, T.D. Hunt, B.J. Sealy
Aluminides and silicides formation by ion beam mixing of multilayers, Pages 98-104, I.J.R. Baumvol
Implants of aluminum into silicon, Pages 105-108, G. Galvagno, A. Scandurra, V. Raineri, E. Rimini, A. La Ferla, V. Sciascia, F. Frisina, M. Raspagliesi, G. Ferla
High energy implants of aluminum in Czochralski and floating zone grown silicon substrates, Pages 109-112, A. La Ferla, L. Torrisi, G. Galvagno, E. Rimini, G. Ciavola, A. Carnera, A. Gasparotto
Ion implantation in polycrystalline silicon thin film transistors, Pages 113-117, D.S. Shen, R.Y. Kwor
Carbon negative ion implantation into silicon, Pages 118-122, Junzo Ishikawa, Hiroshi Tsuji
Beam defocusing for channeling reduction, Pages 123-126, C. Wood, J. Murry, S. Cherekdjian
Structural defects and their electrical activity in germanium implanted silicon, Pages 127-130, J.P. Zhang, T.W. Fan, R.M. Gwilliam, P.L.F. Hemment, J.Q. Wen, Y. Qian, H. Efeoglu, J.H. Evans, A.R. Peaker
Evaluation of Al ion implanted 6H–SiC single crystals, Pages 131-133, T. Nakata, Y. Mizutani, M. Mikoda, M. Watanabe, T. Takagi, S. Nishino
Interfacial reactions of titanium thin films on ion implanted (001) Si, Pages 134-137, H.R. Liauh, M.C. Chen, J.F. Chen, L.J. Chen, W. Lur, C.H. Chu
Influence of point defects on formation of fluorine bubbles and characterization of defects in BF2+ implanted silicon, Pages 138-141, C.H. Chu, J.J. Yang, L.J. Chen
High Miller index channeling in silicon substrates, Pages 142-146, Robert B. Simonton, Charles W. Magee, Al F. Tasch
Formation of excellent shallow n+p junctions by As+ implantation into thin CoSi films on Si substrate, Pages 147-150, C.T. Lin, M.H. Juang, C.H. Chu, H.C. Cheng
Solid phase epitaxial regrowth of ion-implanted amorphous silicon characterized by differential reflectometry, Pages 151-155, S.W. Feng, R.E. Hummel, D.R. Hagmann
A comparison of three techniques for profiling ultra-shallow p+–n junctions: Greater Silicon Valley Implant Users’ Group, Pages 156-159, S.B. Felch, R. Brennan, S.F. Corcoran, G. Webster
Low energy ion implantation and its characterization and processing, Pages 160-169, Daniel F. Downey, Ronald J. Eddy, Sandeep Mehta
Process optimisation for direct formation of device worthy thin film SIMOX structures using 90 keV oxygen implantation, Pages 170-174, A. Nejim, Y. Li, C.D. Marsh, P.L.F. Hemment, R.J. Chater, J.A. Kilner, L.F. Giles, G.R. Booker
Defect engineering of p+-junctions by multiple-species ion implantation, Pages 175-180, M.I. Current, M. Inoue, S. Nakashima, N. Ohno, M. Kuribara, Y. Matsunaga, T. Hara, D. Wagner, S. Leung, B. Adibi, G. Lecouras, L.A. Larson, S. Prussin
Al metallization by cluster beam and physical vapor deposition on heavily implanted Si(100) surfaces, Pages 181-185, Michael I. Current, S. Wada, K. Akedo, T. Yamada, G.H. Takaoka, I. Yamada
A novel delineation technique for 2D-profiling of dopants in crystalline silicon, Pages 186-190, L. Gong, L. Frey, S. Bogen, H. Ryssel
Damage depth profiles for high energy ion implanted silicon, Pages 191-196, Tohru Hara, Takeshi Muraki, Masataka Sakurai, Satoru Takeda, Morio Inoue, Shinji Fuji
Control of the buried SiO2 layer thickness and Si defect density in SIMOX substrates – structural investigation and process optimisation, Pages 197-203, C.D. Marsh, A. Nejim, Y. Li, G.R. Booker, P.L.F. Hemment, R.J. Chater, J.A. Kilner
A new type of silicon-on-insulator with a perfect surface silicon layer, Pages 204-205, Jianming Li, Ming Chong, Jiancheng Zhu
Insulator structures obtained by high dose nitrogen implantation into aluminium on silicon, Pages 206-209, Chenglu Lin, P.L.F. Hemment, A. Nejim, J.P. Zhang, Jinhua Li, Shichang Zou
Computer simulation of SIMOX and SIMNI formed by low-energy ion implantation, Pages 210-212, Shi Zuoyu, Lin Chenglu, Zhu Wenhua, P.L.F. Hemment, U. Bussmann, Zou Shichang
Formation of buried iron–cobalt–silicide layers by high dose implantation, Pages 213-217, D. Panknin, E. Wieser, W. Skorupa, H. Vöhse, J. Albrecht
Electrical characterization of thin film SIMOX structures, Pages 218-221, Zhu Wenhua, Lin Chenglu, Shi Zuoyu, Zou Shichang, P.L.F. Hemment, A. Nejim
Two-dimensional implantation profile simulator – RETRO, Pages 222-225, C-T. John Peng, Nathan W. Cheung
Improved gauge capability for ion implant monitors using temperature compensation for resistivity measurements, Pages 229-233, Walter H. Johnson, Chester L. Mallory, W. Andrew Keenan, Gil Yetter, Dennis Kamenitsa
Sources of variation in Therma Wave measurements of ion implanted wafers, Pages 234-237, Dennis E. Kamenitsa, Robert B. Simonton
Pressure compensated dose control in high current ion implantation systems, Pages 238-242, David McCarron, Marvin Farley, Walter Parmantie
Integration of a particle monitor into the control system for an ion implanter, Pages 243-247, Steven Myers, David McCarron, Julian Blake
Pressure compensation for high current ion implanters, Pages 248-251, Andrew P. Stack
Statistical process analysis of ion implantation, Pages 252-256, C.B. Yarling, J. Nunes, S. Chereckdjian
The relationship between sheet resistance and ion implant dosimetry, Pages 257-258, Andrew P. Stack
Low dose monitors – the movements and causes, Pages 259-262, S. Cherekdjian
Modification of time dependence in thermal wave signal from ion implanted wafers, Pages 263-265, N.O. Pearce, Z. Bokharey, D. Kamenitsa, R. Simonton, N. Tripsas, B. Mehrotra
Resist preparation and removal techniques for high dose implantation on 200 mm wafers, Pages 266-270, J.I. McOmber, K. Ostrowski, M. Meloni, R. Eddy, P. Buccos
Performance characteristics of the NV-20A high current ion implantation system, Pages 271-274, Marvin Farley, Dave McCarron, John Grant, Michael Cristoforo
Damage and its rapid thermal annealing kinetics in Ar+ ion implanted Cz silicon, Pages 275-278, S. Hahn, T. Hara, T. Maekawa, N. Satoh, Y.-K. Kwon, K.-I. Kim, Y.-H. Bae, W.-J. Chung, E.K. McIntyre, W.L. Smith, L. Larson, R. Meinecke
Implanted standards for detection of transition metal contamination of silicon surfaces, Pages 281-283, D.C. Jacobson, J.M. Poate, G.S. Higashi, T. Boone, Richard Hockett
Progress in wafer charging and charge neutralization, Pages 287-290, M.E. Mack, P. Barschall, P. Corey, S. Satoh, S. Walther
Rf driven multicusp ion source for pulsed or steady-state ion beam production, Pages 291-294, K.N. Leung, D.A. Bachman, P.R. Herz, D.S. McDonald
Reliability issues concerning thin gate SiO2 and SiO2/Si interface for ULSI applications, Pages 295-300, T.P. Ma
Charging studies using the CHARM2 wafer surface charging monitor, Pages 301-305, W. Lukaszek, W. Dixon, E. Quek, W. Weisenberger, Sung Ho
Evaluation of ion implantation charging by using EEPROM, Pages 306-310, Norishige Aoki, Katsuya Ishikawa, Takashi Namura, Yoshiki Fukuzaki, Genshu Fuse, Masakatsu Yoshida, Morio Inoue
Wafer charging monitored by high frequency and quasi-static C–V measurements, Pages 311-313, Bill En, Nathan W. Cheung
Ion implantation for large-area optoelectronics on glass substrates, Pages 317-321, Shuhei Tanaka, Takashi Tagami, Tomonori Yamaoka, Keiji Oyoshi, Yasunori Arima
Low energy ion modification of thin films, Pages 322-325, U.J. Gibson
Ion beam application for improved polymer surface properties, Pages 326-330, E.H. Lee, G.R. Rao, M.B. Lewis, L.K. Mansur
Application of a large area ion doping technique to a-Si:H TFT for LCD, Pages 331-335, Akihisa Yoshida, Masatoshi Kitagawa, Takashi Hirao
A method and apparatus for surface modification by gas-cluster ion impact, Pages 336-340, J.A. Northby, T. Jiang, G.H. Takaoka, I. Yamada, W.L. Brown, M. Sosnowski
Irradiation effects of gas-cluster CO2 ion beams on Si, Pages 341-346, I. Yamada, G.H. Takaoka, M.I. Current, Y. Yamashita, M. Ishii
One historical perspective of ion implantation technology, Pages 349-351, R.G. Wilson
IMPLANTER MANUFACTURING PERFORMANCE EXPECTATIONS FOR THE MID 90'S, Pages 353-356, Daniel T. Enloe
Ion Beams in Prospect, Pages 357-364, J.H. Freeman
Activities of the German Ion Implantation Users Group, Pages 365-368, R. Ploss, H. Ryssel
Conformal doping of high aspect ratio trenches by plasma immersion ion implantation (PIII), Pages 369-372, Crid Yu, Zhilin Huang, Nathan W. Cheung
Characterization of Ultra-Shallow P+/N Diodes Fabricated using Plasma Immersion Ion Implantation, Pages 373-376, Erin C. Jones, Seongil Im, Nathan W. Cheung
NV-GSD-A High Current Ion Implantation System, Pages 379-383, T. Tamai, P. Splinter, J. Murakami, T. Shiraishi, K. Komatsu
The NISSIN EXCEED-8000 High Current Ion Implantation System, Pages 385-388, M. Naito, Y. Tamura, T. Hiramatsu, S. Yuasa, Y. Nishigami, M. Nakaya, T. Matsumoto, T. Kinoyama, K. Senoh, Y. Saitoh, M. Nakazawa, Y. Hayashi, K. Tobikawa, S. Okuda, T. Kawai
An Implantation System for MeV-mA Ion-Beams, Pages 389-392, R. Thomae, M. Sarstedt, H. Deitinghoff, J. Dehen, A. Firjahn-Andersch, H. Klein, A. Maaser, J. Müller, A. Schempp, M. Weber
THE E500 – A NEW MEDIUM CURRENT – HIGH ENERGY IMPLANTER, Pages 393-396, Peter F.H.M. VAN DER MEULEN, Frederick B. AMMON
Fast Magnetic Scanning and Ion Optical Features of the New Ibis Oxygen Implanter, Pages 397-400, Hilton F. Glavish, Michael A. Guerra
Overview of the Eaton NV-8200P high beam purity, parallel scanning implanter, Pages 401-404, Andrew M. Ray, Jerald P. Dykstra, Robert B. Simonton
8-INCH PARALLEL ION IMPLANTER: IPZ-9000, Pages 405-408, Y. Mihara, K. Niikura, M. Araki, O. Tsukakoshi, Y. Sakurada
Production Reliability and Automation Improvement of a High Current Ion Implanter, Pages 409-412, P.J. Sullivan, C. Geary
A new solid-state scan amplifier for medium-current ion implanters, Pages 413-416, E.J. Rogers, C.B. Yarling
DEVICE PERFORMANCES AND PARAMETRIC STUDIES OF HIGH ENERGY IMPLANTATIONS WITH MULTIPLE CHARGED ION BEAMS, Pages 417-420, André GROUILLET, Gerhard GÖLTZ, Peter VAN DER MEULEN, Sandeep MEHTA
Ion Implantation Technology For III-V Heterojunction Devices, Pages 421-424, F. Ren, S.J. Pearton, C.R. Abernathy, S.N.G. Chu, T.R. Fullowan, R.F. Kopf, J.R. Lothian, P.W. Wisk, W.S. Hobson, R. Bylsma, R. Esagui, R.G. Elliman, M.C. Ridgway, C. Jagadish, J.S. Williams
DOSIMETRY DESIGN CONSIDERATIONS FOR SERIAL AND BATCH ION IMPLANTATION SYSTEMS, Pages 427-431, Peter VAN DER MEULEN, Peter A. FISHER, Paul M. LUNDQUIST
High-purity Ti ion beam extraction from a multicusp metal ion source, Pages 433-436, Y. Matsuda, H. Inami, T. Yamashita, S. Fujiwara, Y. Inouchi, K. Matsunaga, K. Matsuda
Ion beam Profile and Emittance Measurements, Pages 437-440, V. Benveniste, P. Kellerman, J. Schussler
Measuring the position and profile of an ion beam in systems with ‘R-theta’ scanning, Pages 441-444, W.J. Szajnowski
Development of a Mass Separation Structure for Large Area Ion Source., Pages 445-448, M. Tanjyo, N. Miyamoto, J. Fujita, Y. Ohtani
Post-Acceleration System for a Clean Ion Implanter, Pages 449-452, N. Sakudo, T. Seki, H. Koike, K. Tokiguchi
Boron beam current enhancement on the Genus hot cathode PIG ion source, Pages 453-456, Nobuhiro Tokoro
Sweep Uniformity Control System in the NISSIN NH-20SP, Pages 457-460, N. Nagai, K. Nishikawa, H. Kumazaki
TOTAL PROCESS CONTROL FOR ION IMPLANTATION, Pages 461-464, S. Sharma, D. Lindsey, C. Wood, J. Murry, S. Cherekdjian
Enhanced Performance Ion Sources for the PI9200XJ Ion Implantation System, Pages 465-468, A S Devaney, D A Loome, P T Kindersley, M D Castle
Design of a medium current beam line, Pages 469-473, Barry A. MacKinnon, Monty L. King
OXYGEN ION SOURCE WITH MICROWAVE PLASMA (MP) CATHODE FOR ION BEAM ASSISTED DEPOSITION, Pages 475-478, Yoshio Matsubara, Koji Miyake, Hideaki Tahara, Shuichi Nogawa, Junzo Ishikawa
SINGLE CUSP ION SOURCE FOR A HIGH CURRENT IMPLANTER, Pages 479-481, Takao Sakase, Shu Satoh, Bjorn Pedersen
Computer Controlled Beam Diagnostics, Pages 483-486, I. Krafcsik, L. Farkas, A. Zimmer, C. Rossi, A. Fabris, G. Gorini, R. Pogiani
ION ENERGY DISTRIBUTION OF PLASMA CATHODE OXYGEN–ION SOURCE, Pages 487-490, Takehisa Shibuya, Shizuyo Hashimoto, Hideshi Yokota, Eiji Yabe, Kazuo Takayama
A Gas–Contact Ion Source for Producing Low–Temperature Plasma with High Ion Densities, Pages 491-494, Akira Tonegawa, Shinichi Tanabe, Junichi Ono, Kazuo Takayama
Quartz Wafer Holder for the production of SIMOX, Pages 495-498, T.H. Smick
Operating Characteristics of a Bernas Ion Source for the Varian E220/500 Ion Implanter, Pages 499-502, S.R. Walther
A High Current Multicusp Ion Source For Ion Implantation, Pages 503-506, S.R. Walther
5-25 keV Low Energy Performance Upgrade for DF4 to 300 XP Serial Implanters, Pages 507-510, P.M. Lundquist, M.B. Boucher
Development of a pulsed ion-beam system with laser-plasma ion source., Pages 511-515, V.V. Simonov, A.I. Holopkin, B.N. Mashcovtsev
Development of Ion Projection Lithography Machine., Pages 517-527, V.V. Simonov, A.I. Holopkin, D.A. Pankratenko
Multiple Twist Implants: Channeling Avoidance with Full Symmetry, Pages 531-534, Frank Sinclair, S.W. Ng, Pat Splinter, Nara Meyyappan, Phil Ring, T. Tamai
Depth Profiles from High Energy Implants, Pages 535-537, E. McIntyre, L. Kaminski, K. Whaley
COMPARISON OF 11B+ AND 49BF2+ AT LOW IMPLANTATION ENERGY IN GERMANIUM PREAMORPHIZED SILICON, Pages 539-543, Michel MINONDO, Claude JAUSSAUD, Dominique ROCHE, Anne-Marie PAPON, Peter VAN DER MEULEN, Sandeep MEHTA
A study of the profile differences across 200mm wafers of high dose 150KeV Arsenic on five different modern production ion implanters., Pages 545-547, Daniel Enloe, Sean Corcoran
Improved dose accuracy by vacuum pressure compensation in an Eaton NV10-series ion implanter, Pages 551-554, R. Riekeles
MODERN IMPLANTERS WITH BF2+ DISSOCIATION, Pages 557-560, S. Cherekdjian, M. Anjum, A. Phan
Wafer Contamination by Sputtering and Handling in Ion Implantation, Pages 561-564, R. Schork, L. Frey, H. Ryssel
Experimental Evidence for Beam Particulate Transport in Ion Implanters, Pages 565-569, P. Sferlazzo, D.A. Brown, S.E. Beck, J.F. O'Hanlon
Monitoring of High Energy Contamination in Ion Implantation By Thermawave™ measurements., Pages 571-574, C. JAUSSAUD, F. JOURDAN, A. SOUBIE, R. SIMONTON
Ion Implant Beam Guide Material Evaluation, Pages 575-578, Mary Jones, Frank Sinclair, Jay Blake, Stephen Shields
Clean Implant in Nissin NH-20SP medium current implanter, Pages 579-582, T. Nagayama, N. Nagai, K. Nishikawa, M. Naito
Ion Beam Energy Purity in the Eaton NV-8200P Implanter, Pages 583-586, Robert B. Simonton
Process Control Issues in the Varian E1000 High Current Implanter, Pages 587-591, B.O. Pedersen, R.B. Liebert, D.F. Downey, S. Satoh
PARTICLE PERFORMANCE OF THE E1000, Pages 593-596, M.E. Mack, A. Freytsis, M.L. Pascucci, D.J. Prisby, J. Sedgewick
METALLIC CONTAMINATION IN AN OPEN WHEEL IMPLANTER, Pages 597-600, M.T. Wauk II
Development and applications of a beam energy filter for the PI9200XJ high current implanter, Pages 601-606, Babak Adibi, Norman L. Turner, Tony Marin, George T. Lecouras, Ronald J. Macklin, Wendell J. Boyd, Dennis W. Wagner, Walter J. Wriggins
Considerations For Advanced Charging Solutions Applied to ULSI Device Fabrication, Pages 609-612, H. Ito, F. Plumb, J. England, I. Fotheringham, P. Kindersley
Measurements of Beam Potentials and Surface Voltages on Semiconductor Wafers Using an Ion Spectrometer, Pages 613-616, J. England, N. Bryan, H. Ito, D. Armour, J. Van den Berg, I. Fotheringham, P. Kindersley
Comparison of Charge-up Phenomena between Negative- and Positive-Ion Implantations, Pages 617-620, S. Sakai, M. Tanjyo, K. Matsuda, Y. Gotoh, H. Ohnishi, H. Tsuji, J. Ishikawa
Results of GSVIUG implanter charging round-robin, Pages 621-624, S.B. Felch, W.H. Johnson, W.A. Keenan, A. Stack, C.B. Yarling
Effect of High Current Implantation on the Integrity of Thin Gate Oxides, Pages 625-630, R. Nee, S. Mehta, S. Felch
CHARGING EFFECTS CONTROL IN ION BEAM PROCESSES, Pages 631-634, Kiyoshi Ogata, Yasunori Andoh
Wafer Charge Control in the E1000 Ion Implanter, Pages 635-639, Shu Satoh, Daniel F. Downey, Reuel B. Liebert, Susan Felch
A New Technique for Wafer Charge Neutralization for High Current Ion Implanters, Pages 641-644, Shuji Kikuchi, Shu Satoh, Takao Sakase, Steve Walther, Reuel B. Liebert, Michael E. Mack
Measurement of Process Induced Wafer Potentials, Pages 645-650, Wes Lukaszek, Gordon Angel
Use of an Energy Analyzer Probe in the Characterization of a High Perveance Ion Beam, Pages 651-653, P. Sferlazzo, G. Angel
Effects of BF2+-Implanted Polysilicon Structures on the Reliability of Gate Oxides, Pages 655-658, H.P. Su, S.M. Lin, H.C. Cheng
Ion doping equipment with a large area ion source for giant-micro devices, Pages 661-666, Yasunori Andoh, Koji Matsuda
A Compact Sheet Ion Source for Metal Ion Beam, Pages 667-670, Akira Tonegawa, Takayuki Chida, Kazuo Takayama
Interaction between a magnetized sheet plasma and rf electric field, Pages 671-674, Kenzo Nanri, Kazutaka Kawamura, Eiji Yabe, Katsuhiko Sunako, Kazuo Takayama
Radial Potential Changes in String–Plasma with Variable Conditions of the Both End Electrodes, Pages 675-678, Akihiro Matsubara, Takeshi Noguchi, Kunio Matsumoto, Takao Tanikawa, Kazuo Takayama
PRODUCTION OF RF SLAB PLASMA USING RECTANGULAR MAGNETIC LINE CUSP FIELD, Pages 679-682, K. TAKAHASHI, S. HASHIMOTO, E. YABE, K. TAKAYAMA, K. YAMAUCHI
PRODUCTION OF LARGE VOLUME CYLINDRICAL RF PLASMA USING CIRCULAR MAGNETIC LINE CUSP FIELD, Pages 683-686, K. YAMAUCHI, M. SHIBAGAKI, A. KONO, K. TAKAHASHI, T. SHEBUYA, E. YABE, K. TAKAYAMA
Characterization of a plasma doping system, Pages 687-690, S.B. Felch, T. Sheng, C.B. Cooper
Density deviations of sheet plasma, Pages 691-694, Katsuhiko Sunako, Kenzo Nanri, Kazutaka Kawamura, Kazuo Takayama
Author Index, Pages 695-697