Ion Beam Processing of Materials and Deposition Processes of Protective Coatings

Content: 
EUROPEAN MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS, Page ii
Front Matter, Page iii
Copyright, Page iv
E-MRS'95 Symposium J: Preface, Page vii, J.P. Thomas Guest Editor
E-MRS'95 Symposium C: Preface, Page ix, P.L.F. Hemment Guest Editor
Sponsors, Page x
Molecule and cluster bombardment: energy loss, trajectories, and collision cascades, Pages 1-11, P. Sigmund, I.S. Bitensky, J. Jensen
Nonlinear transmission sputtering, Pages 12-15, I.S. Bitensky, P. Sigmund
Molecular dynamics study of shock wave generation by cluster impact on solid targets, Pages 16-22, Z. Insepov, I. Yamada
Track formation in metals by electronic processes using atomic and cluster ions, Pages 23-25, A. Dunlop, H. Dammak, D. Lesueur
Atomic and cluster ion bombardment in the electronic stopping power regime: A thermal spike description, Pages 26-29, M. Toulemonde, Ch. Dufour, Z. Wang, E. Paumier
Production, acceleration and diagnostics of high intensity beams, Pages 30-38, B.H. Wolf
Production, acceleration and diagnostics of molecular ions and ionized clusters, Pages 39-47, P. Håkansson, S. Della-Negra, J.P. Mouffron, B. Waast, P.A. Sullivan
Hyperthermal chemistry and cluster collisions, Pages 48-54, E.E.B. Campbell, I.V. Hertel
A plasma desorption mass spectrometry study of cluster ion formation from group IIA nitrates, Pages 55-58, W.R. Ferrell, M.J. Van Stipdonk, E.A. Schweikert
Sputtering of large size clusters from solids bombarded by high energy cluster ions and fullerenes, Pages 59-63, K. Baudin, A. Brunelle, S. Della-Negra, D. Jacquet, P. Håkansson, Y. Le Beyec, M. Pautrat, R.R. Pinho, Ch. Schoppmann
Acceleration of clusters, collision induced charge exchange at MeV energies and applications for materials science, Pages 64-67, F. Ames, M. Döbeli, C.R. Musil, P.W. Nebiker, L. Scandella, M. Suter, H.A. Synal
The use of coincidence counting mass spectrometry to study the emission and metastable dissociation of cluster ions, Pages 68-71, M.J. Van Stipdonk, E.A. Schweikert
Secondary electron emission of solids by impact of molecular ions and clusters, Pages 72-78, M. Fallavier
Secondary electron emission from thin carbon foils under hydrogen cluster impact, Pages 79-82, A. Billebaud, D. Dauvergne, M. Fallavier, R. Kirsch, J.-C. Poizat, J. Remillieux, H. Rothard, J.-P. Thomas
SiO2 film formation at room temperature by gas cluster ion beam oxidation, Pages 83-85, M. Akizuki, J. Matsuo, I. Yamada, M. Harada, S. Ogasawara, A. Doi
Reactive accelerated cluster erosion (RACE) by ionized cluster beams, Pages 86-88, Jürgen Gspann
Investigation of damage formation by gas cluster ion bombardment, Pages 89-93, Jiro Matsuo, Daisuke Takeuchi, Atsushi Kitai, Isao Yamada
Preparation of C60 single crystalline thin film by ionized cluster beam deposition and ion implantation into single crystalline C60 thin film, Pages 94-98, Satoru Isoda, Hiroaki Kawakubo, Satoshi Nishikawa, Osamu Wada
The computer simulation of energetic particle—solid interactions, Pages 99-104, Roger P. Webb, Roger Smith, Ivan Chakarov, Keith Beardmore
STM investigation of energetic carbon cluster ion penetration depth into HOPG, Pages 105-108, G. Bräuchle, S. Richard-Schneider, D. Illig, R.D. Beck, H. Schreiber, M.M. Kappes
Atomistic study of defect generation mechanisms in Mo/W superlattices, Pages 109-111, M.H. Carlberg, V. Chirita, E.P. Münger
Defect creation induced by GeV ions in MgO containing Na precipitates, Pages 112-115, M. Beranger, R. Brenier, B. Canut, S.M.M. Ramos, P. Thevenard, E. Balanzat, M. Toulemonde
N+ ion implantation effects on microhardness and adhesion in TiO2 films, Pages 116-119, K. Fukushima, I. Yamada
Conducting polymer synthesis via ion beam induced precursor conversion, Pages 120-124, J. Davenas, V. Massardier, V.H. Tran
Processing and characterization of ferroelectric thin films by multi-ion-beam sputtering, Pages 125-128, I. Kanno, S. Hayashi, R. Takayama, H. Sakakima, T. Hirao
TED of boron in the presence of EOR defects: the use of the theory of Ostwald ripening to calculate Si-interstitial supersaturation in the vicinity of extrinsic defects, Pages 129-132, C. Bonafos, D. Alquier, A. Martinez, D. Mathiot, A. Claverie
Observation of vacancy clustering in FZ-Si crystals during in situ electron irradiation in a high voltage electron microscope, Pages 133-138, L. Fedina, J. Van Landuyt, J. Vanhellemont, A.L. Aseev
The damage recovery and electrical activation of shallow boron implants in silicon: The effects of high energy implants, Pages 139-143, K. Kyllesbech Larsen, V. Privitera, S. Coffa, F. Priolo, C. Spinella, M. Saggio, S.U. Campisano
The effect of dose rate on ion implanted impurity profiles in silicon, Pages 144-147, S. Tian, S.-H. Yang, S. Morris, K. Parab, A.F. Tasch, D. Kamenitsa, R. Reece, B. Freer, R.B. Simonton, C. Magee
Damage profiles in as-implanted silicon: fluence dependence, Pages 148-151, R. Nipoti, G. Lulli, S. Milita, M. Servidori, C. Cellini, A. Camera
Dynamic Monte Carlo simulation of nonlinear damage growth during ion implantation of crystalline silicon, Pages 152-155, E. Albertazzi, M. Bianconi, G. Lulli, R. Nipoti, A. Camera, C. Cellini
Molecular dynamics study of the fluence dependence of Si sputtering by 1 keV Ar+ ions, Pages 156-159, J.E. Rubio, L.A. Marqués, L. Pelaz, M. Jaraíz, J. Barbolla
Spectroscopic ellipsometry applied to the determination of an ion implantation depth profile, Pages 160-168, Pierre Boher, Jean Louis Stehle, Jean Philippe Piel, M. Fried, T. Lohner, O. Polgar, N.Q. Khanh, I. Barsony
Kinetics of impurity gettering on buried defects created by MeV argon implantation, Pages 169-172, A. Grob, P. Rohr, G. Mariani, J. Sevely, J.J. Grob
Influence of sample thickness on carrier lifetime modification induced by 4 MeV proton implantation in silicon, Pages 173-176, L.P. Biró, J. Gyulai, N.Q. Khanh, P. Tüttő
Ultra-shallow junction formation in silicon using ion implantation, Pages 177-183, A.F. Tasch, S.K. Banerjee
The chemical factor and its influence on the formation of defect structures and their gettering properties in layers of silicon implanted with chemical-active ions, Pages 184-187, A.N. Aleshin, K.L. Enisherlova, A.A. Kalinin, V.N. Mordkovich
Implanted buried layers and interfaces: Application in the new area of very- and ultra-high efficiency solar cells, Pages 188-191, Z.T. Kuznicki, J.-J. Grob, B. Prévot
Ion implanted suicides studies by frequency noise level measurements, Pages 192-195, M. Stojanovic, A. Vasic, C. Jeynes
The effect of rapid thermal treatments on the formation of shallow junctions by implanting boron and BF2+ ions into (100) silicon through a protecting mask, Pages 196-200, L. Kaabi, B. Remaki, C. Gontrand, P.F. Lo, B. Balland
Submicron CoSi2 structures fabricated by focused ion beam implantation and local flash lamp melting, Pages 201-205, L. Bischoff, K.-H. Heinig, J. Teichert, W. Skorupa
Structural defects in SIMOX, Pages 206-213, J. Stoemenos
Novel approach for synthesizing of nanometer-sized Si crystals in SiO2 by ion implantation and their optical characterization, Pages 214-218, Tsutomu Shimizu-Iwayama, Yoichi Terao, Atsushi Kamiya, Motonori Takeda, Setsuo Nakao, Kazuo Saitoh
Effect of the gas ambient on the intensity of the visible photoluminescence from Si microcrystallites in a SiO2 matrix formed by ion implantation, Pages 219-222, T. Komoda, J.P. Kelly, R.M. Gwilliam, P.L.F. Hemment, B.J. Sealy
Self-structuring of buried SiO2 precipitate layers during IBS: A computer simulation, Pages 223-227, Stefan Reiss, Karl-Heinz Heinig
Improved characterization of fully-depleted SOI wafers by pseudo-MOS transistor, Pages 228-232, A.M. Ionescu, S. Cristoloveanu, S.R. Wilson, A. Rusu, A. Chovet, H. Seghir
Progress in Japanese frontier projects on ion beam processing of advanced materials, Pages 233-241, K. Hattori
Characteristics and peculiarities of surface processing by gas cluster ion beams, Pages 242-247, Isao Yamada
Atomic level smoothing of CVD diamond films by gas cluster ion beam etching, Pages 248-251, Akihisa Yoshida, Masahiro Deguchi, Makoto Kitabatake, Takashi Hirao, Jiro Matsuo, Noriaki Toyoda, Isao Yamada
Design considerations for plasma immersion ion implantation systems, Pages 252-254, S. Mändl, J. Brutscher, R. Günzel, W. Möller
Lateral implantation dose measurements of plasma immersion ion implanted non-planar samples, Pages 255-258, J. Hartmann, W. Ensinger, R.W. Thomae, H. Bender, A. Königer, B. Stritzker, B. Rauschenbach
Ion beam analysis of plasma immersion implanted silicon for solar cell fabrication, Pages 259-262, N.Q. Khánh, I. Pintér, Cs. Dücső, M. Ádám, E. Szilágyi, I. Bársony, M.A. El-Sherbiny, J. Gyulai
Characterization of hydrogenated amorphous silicon prepared by ion beam assisted evaporation, Pages 263-266, N. Hadj Zoubir, H. Rinnert, M. Vergnat, G. Marchal, A. Burneau
Beam scanning system for the uniformity of implanted doses in a large area, Pages 267-269, P. Desgardin, E. Ntsoenzok, J.F. Barbot, J. Briaud, J. Vernois, D.B. Isabelle
Atomic scale investigation of surface modification induced by 215 MeV Ne irradiation on graphite, Pages 270-274, L.P. Biró, J. Gyulai, K. Havancsák
Thin BN films obtained by dual-ion-beam sputtering: an FT-IR and spectroscopic ellipsometry characterization, Pages 275-279, C. Quirós, P. Prieto, J.F. Trigo, E. Elizalde, J.M. Sanz
Preparation of Al2O3 films by a new CVD process combining plasma and accelerated ion beams, Pages 280-283, Hiroshi Nakai, Hajime Kuwahara, Joji Shinohara, Tatsumi Kawaratani, Tadashi Sassa, Yuji Ikegami
Layer and interface analysis of ultra thin ion beam produced silicon nitride layers by NRA and TEM, Pages 284-288, A. Markwitz, S. Klein, R.W. Michelmann, H. Baumann, E.F. Krimmel, K. Bethge
Structural, morphological, electrical and luminous properties of undoped micro/nanocrystalline silicon films deposited by ion-assisted beam deposition techniques, Pages 289-293, H.R. Khan, H. Frey, F. Banhart
Effects of ion irradiations on properties of polyphosphazene–silica composite films, Pages 294-297, J.C. Pivin, G. Brusatin, M. Guglielmi, G. Facchin, M. Gleria
He implant-damage isolation of MOVPE grown GaAs/InGaP/InGaAsP layers, Pages 298-300, H. Strusny, P. Ressel, K. Vogel, J. Würfl
Ion implantation induced damage in relaxed Si0.75Ge0.25, Pages 301-304, F. Priolo, C. Spinella, E. Albertazzi, M. Bianconi, G. Lulli, R. Nipoti, J.K.N. Lindner, A. Mesli, R.C. Barklie, L. Sealy, B. Holm, A. Nylandsted Larsen
A study of base contact formation in epitaxial Si/Si0.88Ge0.12 HBT structures, Pages 305-310, A. Nejim, F. Cristiano, P.L.F. Hemment, D.A.O. Hope, J.L. Glasper, C. Pickering, W.Y. Leong, D.J. Robbins
Structural studies of ion beam synthesised SiGe/Si heterostructures for HBT applications, Pages 311-315, F. Cristiano, A. Nejim, D.A.O. Hope, M.R. Houlton, P.L.F. Hemment
Radiation damage of 2 MeV Si ions in Si0.75Ge0.25: optical measurements and damage modelling, Pages 316-320, J.K.N. Lindner
Investigation of the damage induced by 200 keV Ge+ ion implantation in 6H—SiC, Pages 321-324, Y. Pacaud, W. Skorupa, A. Perez-Rodriguez, G. Brauer, J. Stoemenos, R.C. Barklie
Ion beam synthesis of β-SiC at 950°C and structural characterization, Pages 325-329, N. Frangis, A. Nejim, P.L.F. Hemment, J. Stoemenos, J. Van Landuyt
XTEM and IR absorption analysis of silicon carbide prepared by high temperature carbon implantation in silicon, Pages 330-333, L. Simon, J. Fauré, A. Mesli, T. Heiser, J.J. Grob, J.L. Balladore
Ion beam assisted recrystallization of SiC/Si structures, Pages 334-337, A. Pérez-Rodríguez, R. Kögler, L. Calvo-Barrio, C. Serre, A. Romano-Rodríguez, V. Heera, W. Skorupa, J.R. Morante
Ion beam synthesis by tungsten-implantation into 6H—silicon carbide, Pages 338-341, H. Weishart, H.J. Steffen, W. Matz, M. Voelskow, W. Skorupa
Modification of magnetron sputtered a-Si1−xCx:H films by implantation of Ge+, Pages 342-347, N. Tzenov, D. Dimova-Malinovska, Ts. Marinova, V. Krastev, T. Tsvetkova
Author Index, Pages 349-355